公开(公告)号：US20070246787A1

公开(公告)日：2007-10-25

申请号：US11394056

申请日：2006-03-29

申请人： Lien-Chang Wang ,  Eugene Chen ,  Yiming Huai ,  Zhitao Diao

发明人： Lien-Chang Wang ,  Eugene Chen ,  Yiming Huai ,  Zhitao Diao

IPC分类号： H01L43/00

CPC分类号： H01L43/08 ,  H01L27/228 ,  H01L43/12

摘要： Techniques and device designs associated with devices having magnetic or magnetoresistive tunnel junctions (MTJs) configured to operate based on spin torque transfer switching. On-plug MTJ designs and fabrication techniques are described.

摘要翻译： 与具有磁或磁阻隧道结（MTJ）的装置相关联的技术和设备设计，其被配置为基于自旋扭矩传递切换进行操作。 描述了插头MTJ设计和制造技术。

公开(公告)号：US20070171694A1

公开(公告)日：2007-07-26

申请号：US11318337

申请日：2005-12-23

申请人： Yiming Huai ,  Zhitao Diao ,  Alex Panchula ,  Eugene Chen ,  Lien-Chang Wang

发明人： Yiming Huai ,  Zhitao Diao ,  Alex Panchula ,  Eugene Chen ,  Lien-Chang Wang

IPC分类号： G11C11/22

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693

摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having one or more spin diffusion layers to diffuse the electron spins outside the MTJ or spin valve structure to reduce the spin transfer switching current for switching the free layer.

摘要翻译： 诸如磁性或磁阻隧道结（MTJ）和自旋阀的磁性多层结构具有一个或多个自旋扩散层，以将电子自旋扩散到MTJ或自旋阀结构外部，以减少用于切换自由层的自旋转移开关电流。

公开(公告)号：US07430135B2

公开(公告)日：2008-09-30

申请号：US11318337

申请日：2005-12-23

申请人： Yiming Huai ,  Zhitao Diao ,  Alex Panchula ,  Eugene Youjun Chen ,  Lien-Chang Wang

发明人： Yiming Huai ,  Zhitao Diao ,  Alex Panchula ,  Eugene Youjun Chen ,  Lien-Chang Wang

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693

摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having one or more spin diffusion layers to diffuse the electron spins outside the MTJ or spin valve structure to reduce the spin transfer switching current for switching the free layer.

摘要翻译： 诸如磁性或磁阻隧道结（MTJ）和自旋阀的磁性多层结构具有一个或多个自旋扩散层，以将电子自旋扩散到MTJ或自旋阀结构外部，以减少用于切换自由层的自旋转移开关电流。

公开(公告)号：US07738287B2

公开(公告)日：2010-06-15

申请号：US11692090

申请日：2007-03-27

申请人： Zhitao Diao ,  Lien-Chang Wang ,  Yiming Huai

发明人： Zhitao Diao ,  Lien-Chang Wang ,  Yiming Huai

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  Y10T29/49002

摘要： A method and system for providing a magnetic memory is disclosed. The method and system include providing a plurality of magnetic storage cells in an array, a plurality of bit lines, and at least one bias structure. Each of the plurality of magnetic storage cells includes at least one magnetic element having an easy axis and being programmable by at least one write current driven through the magnetic element. The plurality of bit lines corresponds to the plurality of magnetic storage cells. The at least one bias structure is magnetically coupled with the at least one magnetic element in each of the plurality of magnetic storage cells. The at least one bias structure provides a bias field in a direction greater than zero degrees and less than one hundred eighty degrees from the easy axis.

摘要翻译： 公开了一种用于提供磁存储器的方法和系统。 该方法和系统包括在阵列，多个位线以及至少一个偏置结构中提供多个磁存储单元。 多个磁存储单元中的每一个包括至少一个具有容易轴的磁性元件，并且可由通过磁性元件驱动的至少一个写入电流来编程。 多个位线对应于多个磁存储单元。 所述至少一个偏置结构与所述多个磁存储单元中的每一个中的所述至少一个磁性元件磁耦合。 所述至少一个偏置结构在大于零度且小于离开易轴的百分之八十度的方向上提供偏置场。

公开(公告)号：US20080273380A1

公开(公告)日：2008-11-06

申请号：US11692090

申请日：2007-03-27

申请人： Zhitao Diao ,  Lien-Chang Wang ,  Yiming Huai

发明人： Zhitao Diao ,  Lien-Chang Wang ,  Yiming Huai

IPC分类号： G11C11/00 ,  H01S4/00

CPC分类号： G11C11/16 ,  Y10T29/49002

摘要： A method and system for providing a magnetic memory is disclosed. The method and system include providing a plurality of magnetic storage cells in an array, a plurality of bit lines, and at least one bias structure. Each of the plurality of magnetic storage cells includes at least one magnetic element having an easy axis and being programmable by at least one write current driven through the magnetic element. The plurality of bit lines corresponds to the plurality of magnetic storage cells. The at least one bias structure is magnetically coupled with the at least one magnetic element in each of the plurality of magnetic storage cells. The at least one bias structure provides a bias field in a direction greater than zero degrees and less than one hundred eighty degrees from the easy axis.

摘要翻译： 公开了一种用于提供磁存储器的方法和系统。 该方法和系统包括在阵列，多个位线以及至少一个偏置结构中提供多个磁存储单元。 多个磁存储单元中的每一个包括至少一个具有容易轴的磁性元件，并且可由通过磁性元件驱动的至少一个写入电流来编程。 多个位线对应于多个磁存储单元。 所述至少一个偏置结构与所述多个磁存储单元中的每一个中的所述至少一个磁性元件磁耦合。 所述至少一个偏置结构在大于零度且小于离开易轴的百分之八十度的方向上提供偏置场。

公开(公告)号：US20100264501A1

公开(公告)日：2010-10-21

申请号：US12528854

申请日：2008-02-25

申请人： Haruo Furuta ,  Shuichi Ueno ,  Ryoji Matsuda ,  Tatsuta Fukumura ,  Takeharu Kuroiwa ,  Lien-Chang Wang ,  Eugene Chen ,  Yiming Huai

发明人： Haruo Furuta ,  Shuichi Ueno ,  Ryoji Matsuda ,  Tatsuta Fukumura ,  Takeharu Kuroiwa ,  Lien-Chang Wang ,  Eugene Chen ,  Yiming Huai

IPC分类号： H01L29/82 ,  H01L21/02

CPC分类号： H01L43/12 ,  B82Y10/00 ,  H01L27/228

摘要： Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode. Also disclosed is a magnetic storage device comprising an interlayer insulating film provided with a wiring layer, an insulating film formed on the interlayer insulating film, an opening formed in the insulating film so that the wiring layer is exposed therefrom, a barrier metal layer provided so as to cover the inner surface of the opening, a lower electrode formed on the barrier metal so as to fill the opening, and a TMR element formed on the lower electrode.

摘要翻译： 公开了一种制造包括TMR元件的磁存储装置的方法，该方法包括在具有布线层的层间绝缘膜上形成绝缘膜的步骤，用于在绝缘膜上形成开口的开口形成步骤， 布线层暴露于其中，金属层形成步骤用于在绝缘层上形成金属层以使其开口被填充; CMP步骤，用于通过CMP方法在绝缘层上抛光和去除金属层，并形成金属 剩余在开口中的层形成下电极，以及在下电极上形成TMR元件的步骤。 还公开了一种磁存储装置，其包括设置有布线层的层间绝缘膜，形成在层间绝缘膜上的绝缘膜，形成在绝缘膜中的开口，使得布线层暴露于其中，阻挡金属层设置为 为了覆盖开口的内表面，形成在阻挡金属上以便填充开口的下电极和形成在下电极上的TMR元件。

公开(公告)号：US08546151B2

公开(公告)日：2013-10-01

申请号：US12528854

申请日：2008-02-25

申请人： Haruo Furuta ,  Shuichi Ueno ,  Ryoji Matsuda ,  Tatsuya Fukumura ,  Takeharu Kuroiwa ,  Lien-Chang Wang ,  Eugene Chen ,  Yiming Huai

发明人： Haruo Furuta ,  Shuichi Ueno ,  Ryoji Matsuda ,  Tatsuya Fukumura ,  Takeharu Kuroiwa ,  Lien-Chang Wang ,  Eugene Chen ,  Yiming Huai

IPC分类号： H01L21/00

CPC分类号： H01L43/12 ,  B82Y10/00 ,  H01L27/228

摘要： Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode. Also disclosed is a magnetic storage device comprising an interlayer insulating film provided with a wiring layer, an insulating film formed on the interlayer insulating film, an opening formed in the insulating film so that the wiring layer is exposed therefrom, a barrier metal layer provided so as to cover the inner surface of the opening, a lower electrode formed on the barrier metal so as to fill the opening, and a TMR element formed on the lower electrode.

摘要翻译： 公开了一种制造包括TMR元件的磁存储装置的方法，该方法包括在具有布线层的层间绝缘膜上形成绝缘膜的步骤，用于在绝缘膜上形成开口的开口形成步骤， 布线层暴露于其中，金属层形成步骤用于在绝缘层上形成金属层以使其开口被填充; CMP步骤，用于通过CMP方法在绝缘层上抛光和去除金属层，并形成金属 剩余在开口中的层形成下电极，以及在下电极上形成TMR元件的步骤。 还公开了一种磁存储装置，其包括设置有布线层的层间绝缘膜，形成在层间绝缘膜上的绝缘膜，形成在绝缘膜中的开口，使得布线层暴露于其中，阻挡金属层设置为 为了覆盖开口的内表面，形成在阻挡金属上以便填充开口的下电极和形成在下电极上的TMR元件。

公开(公告)号：US07623369B2

公开(公告)日：2009-11-24

申请号：US12030541

申请日：2008-02-13

申请人： Xiao Luo ,  Eugene Chen ,  Lien-Chang Wang ,  Yiming Huai

发明人： Xiao Luo ,  Eugene Chen ,  Lien-Chang Wang ,  Yiming Huai

IPC分类号： G11C16/04

CPC分类号： G11C11/1675 ,  G11C8/12 ,  G11C8/14 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673

摘要： A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.

摘要翻译： 描述了一种用于提供磁存储器的方法和系统。 该方法和系统包括提供磁存储器单元，局部和全局字线，位线和源极线。 每个磁存储单元包括磁性元件和与该磁性元件连接的选择装置。 磁性元件由在第一和第二方向通过磁性元件驱动的第一和第二写入电流编程。 局部字线与第一电阻率的选择装置连接。 每个全局字线对应于局部字线的一部分，并具有低于第一电阻率的电阻率。 位线与磁性元件连接。 源极线与选择器件连接。 每个源极线对应于多个磁存储器单元并且承载第一和第二写入电流。

公开(公告)号：US07187577B1

公开(公告)日：2007-03-06

申请号：US11286083

申请日：2005-11-23

申请人： Lien-Chang Wang ,  Zhitao Diao ,  Yunfei Ding

发明人： Lien-Chang Wang ,  Zhitao Diao ,  Yunfei Ding

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A method and system for providing a magnetic memory is included. The method and system include providing at least one magnetic storage cell and at least one dummy resistor coupled with the at least one magnetic storage cell at least for a write operation of the at least one magnetic storage cell. Each of the at least one magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element being programmed by a first write current driven through the magnetic element in a first direction and a second write current driven through the magnetic element in a second direction. The selection device is configured to be coupled between the magnetic element and the at least one dummy resistor.

摘要翻译： 包括提供磁存储器的方法和系统。 该方法和系统包括至少提供至少一个磁存储单元和至少一个与至少一个磁存储单元耦合的虚拟电阻器，用于至少一个磁存储单元的写入操作。 所述至少一个磁存储单元中的每一个包括与所述磁性元件耦合的磁性元件和选择装置。 磁性元件由第一方向驱动通过磁性元件的第一写入电流和沿着第二方向驱动通过磁性元件的第二写入电流来编程。 选择装置被配置为耦合在磁性元件和至少一个虚拟电阻器之间。

公开(公告)号：US20070297223A1

公开(公告)日：2007-12-27

申请号：US11476171

申请日：2006-06-26

申请人： Eugene Youjun Chen ,  Yiming Huai ,  Alex Fischer Panchula ,  Lien-Chang Wang ,  Xiao Luo

发明人： Eugene Youjun Chen ,  Yiming Huai ,  Alex Fischer Panchula ,  Lien-Chang Wang ,  Xiao Luo

IPC分类号： G11C11/15

CPC分类号： G11C11/16

摘要： A method and system for providing a magnetic memory is described. The magnetic memory includes magnetic storage cells in an array, bit lines, and source lines. Each magnetic storage cell includes at least one magnetic element. The magnetic element(s) are programmable by write currents driven through the magnetic element(s). Each magnetic element has free and pinned layer(s) and a dominant spacer. The magnetic memory is configured such that either the read current(s) flow from the free layer(s) to the dominant spacer if the maximum low resistance state read current divided by the minimum low resistance state write current is greater than the maximum high resistance state read current divided by the minimum high resistance state write current or the read current(s) flow from the dominant spacer to the free layer(s) if the maximum low resistance state read current divided by the minimum low resistance state write current is less than the maximum high resistance state read current divided by the minimum high resistance state write current.

摘要翻译： 描述了一种用于提供磁存储器的方法和系统。 磁存储器包括阵列中的磁存储单元，位线和源极线。 每个磁存储单元包括至少一个磁性元件。 磁性元件可以通过驱动通过磁性元件的写入电流来编程。 每个磁性元件具有自由和固定的层和主要间隔物。 如果最大低电阻状态读取电流除以最小低电阻状态写入电流除以最大高电阻，则磁存储器被配置为使得读取电流从自由层流向主要间隔物 如果最小低电阻状态读取电流除以最小低电阻状态写入电流，则状态读取电流除以最小高电阻状态写入电流或从主要间隔物到自由层的读取电流（s） 比最大高电阻状态读取电流除以最小高电阻状态写入电流。