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    Method and system for providing field biased magnetic memory devices
    4.
    发明授权
    Method and system for providing field biased magnetic memory devices 有权
    用于提供场偏置磁存储器件的方法和系统

    公开(公告)号：US07738287B2

    公开(公告)日：2010-06-15

    申请号：US11692090

    申请日：2007-03-27

    申请人： Zhitao Diao ,  Lien-Chang Wang ,  Yiming Huai

    发明人： Zhitao Diao ,  Lien-Chang Wang ,  Yiming Huai

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16 ,  Y10T29/49002

    摘要： A method and system for providing a magnetic memory is disclosed. The method and system include providing a plurality of magnetic storage cells in an array, a plurality of bit lines, and at least one bias structure. Each of the plurality of magnetic storage cells includes at least one magnetic element having an easy axis and being programmable by at least one write current driven through the magnetic element. The plurality of bit lines corresponds to the plurality of magnetic storage cells. The at least one bias structure is magnetically coupled with the at least one magnetic element in each of the plurality of magnetic storage cells. The at least one bias structure provides a bias field in a direction greater than zero degrees and less than one hundred eighty degrees from the easy axis.

    摘要翻译： 公开了一种用于提供磁存储器的方法和系统。 该方法和系统包括在阵列，多个位线以及至少一个偏置结构中提供多个磁存储单元。 多个磁存储单元中的每一个包括至少一个具有容易轴的磁性元件，并且可由通过磁性元件驱动的至少一个写入电流来编程。 多个位线对应于多个磁存储单元。 所述至少一个偏置结构与所述多个磁存储单元中的每一个中的所述至少一个磁性元件磁耦合。 所述至少一个偏置结构在大于零度且小于离开易轴的百分之八十度的方向上提供偏置场。

    METHOD AND SYSTEM FOR PROVIDING FIELD BIASED MAGNETIC MEMORY DEVICES
    5.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING FIELD BIASED MAGNETIC MEMORY DEVICES 有权
    用于提供现场偏磁磁记录装置的方法和系统

    公开(公告)号：US20080273380A1

    公开(公告)日：2008-11-06

    申请号：US11692090

    申请日：2007-03-27

    申请人： Zhitao Diao ,  Lien-Chang Wang ,  Yiming Huai

    发明人： Zhitao Diao ,  Lien-Chang Wang ,  Yiming Huai

    IPC分类号： G11C11/00 ,  H01S4/00

    CPC分类号： G11C11/16 ,  Y10T29/49002

    摘要： A method and system for providing a magnetic memory is disclosed. The method and system include providing a plurality of magnetic storage cells in an array, a plurality of bit lines, and at least one bias structure. Each of the plurality of magnetic storage cells includes at least one magnetic element having an easy axis and being programmable by at least one write current driven through the magnetic element. The plurality of bit lines corresponds to the plurality of magnetic storage cells. The at least one bias structure is magnetically coupled with the at least one magnetic element in each of the plurality of magnetic storage cells. The at least one bias structure provides a bias field in a direction greater than zero degrees and less than one hundred eighty degrees from the easy axis.

    摘要翻译： 公开了一种用于提供磁存储器的方法和系统。 该方法和系统包括在阵列，多个位线以及至少一个偏置结构中提供多个磁存储单元。 多个磁存储单元中的每一个包括至少一个具有容易轴的磁性元件，并且可由通过磁性元件驱动的至少一个写入电流来编程。 多个位线对应于多个磁存储单元。 所述至少一个偏置结构与所述多个磁存储单元中的每一个中的所述至少一个磁性元件磁耦合。 所述至少一个偏置结构在大于零度且小于离开易轴的百分之八十度的方向上提供偏置场。

    Magnetic device having multilayered free ferromagnetic layer
    6.
    发明申请
    Magnetic device having multilayered free ferromagnetic layer 有权
    具有多层自由铁磁层的磁性器件

    公开(公告)号：US20070063237A1

    公开(公告)日：2007-03-22

    申请号：US11498294

    申请日：2006-08-01

    申请人： Yiming Huai ,  Zhitao Diao ,  Eugene Chen

    发明人： Yiming Huai ,  Zhitao Diao ,  Eugene Chen

    IPC分类号： H01L29/94

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11B5/3983 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3268 ,  H01L27/228 ,  H01L43/10

    摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers. Each free ferromagnetic layer can include two or more layers and may be a multilayered free ferromagnetic stack that includes first and second ferromagnetic layers and a non-magnetic spacer between the first and second ferromagnetic layers.

    摘要翻译： 诸如磁性或磁阻型隧道结（MTJ）和自旋阀的磁性多层结构具有磁性偏置层，该磁性偏置层形成在自由铁磁层的旁边并磁耦合到自由铁磁层，以实现针对由例如热波动和误差引起的波动的期望的稳定性 领域。 具有低纵横比的稳定的MTJ单元可以使用CMOS处理制造，例如使用磁偏置层的例如高密度MRAM存储器件和其他器件。 可以通过驱动垂直于层的写入电流，使用自旋转移感应开关对这种多层结构进行编程。 每个自由铁磁层可以包括两层或更多层，并且可以是多层自由铁磁性堆叠，其包括第一和第二铁磁层和第一和第二铁磁层之间的非磁性间隔物。

    Magnetic device having stabilized free ferromagnetic layer
    7.
    发明申请
    Magnetic device having stabilized free ferromagnetic layer 有权
    具有稳定的自由铁磁层的磁性装置

    公开(公告)号：US20070063236A1

    公开(公告)日：2007-03-22

    申请号：US11232356

    申请日：2005-09-20

    申请人： Yiming Huai ,  Zhitao Diao ,  Eugene Chen

    发明人： Yiming Huai ,  Zhitao Diao ,  Eugene Chen

    IPC分类号： H01L29/94

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11B5/3983 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3263 ,  H01F10/3268 ,  H01L27/228 ,  H01L43/10

    摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers.

    摘要翻译： 诸如磁性或磁阻型隧道结（MTJ）和自旋阀的磁性多层结构具有磁性偏置层，该磁性偏置层形成在自由铁磁层的旁边并磁耦合到自由铁磁层，以实现针对由例如热波动和误差引起的波动的期望的稳定性 领域。 具有低纵横比的稳定的MTJ单元可以使用CMOS处理制造，例如使用磁偏置层的例如高密度MRAM存储器件和其他器件。 可以通过驱动垂直于层的写入电流，使用自旋转移感应开关对这种多层结构进行编程。

    Magnetic element utilizing free layer engineering
    8.
    发明授权
    Magnetic element utilizing free layer engineering 有权
    使用自由层工程的磁性元件

    公开(公告)号：US07916433B2

    公开(公告)日：2011-03-29

    申请号：US12816108

    申请日：2010-06-15

    申请人： Yiming Huai ,  Zhitao Diao ,  Eugene Youjun Chen

    发明人： Yiming Huai ,  Zhitao Diao ,  Eugene Youjun Chen

    IPC分类号： G11B5/127 ,  G11C11/14

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11C11/161 ,  H01L43/10 ,  Y10T428/115

    摘要： A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, a barrier layer, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer. The barrier layer resides between the pinned layer and the free layer and includes MgO. The first ferromagnetic layer resides between the barrier layer and the intermediate layer. The first ferromagnetic layer includes at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent. The first ferromagnetic layer is ferromagnetically coupled with the second ferromagnetic layer. The intermediate layer is configured such that the first ferromagnetic layer has a first crystalline orientation and the second ferromagnetic layer has a second crystalline orientation different from the first ferromagnetic layer.

    摘要翻译： 描述了一种用于提供磁性元件的方法和系统。 该方法和系统包括提供钉扎层，阻挡层和自由层。 自由层包括第一铁磁层，第二铁磁层和第一铁磁层与第二铁磁层之间的中间层。 阻挡层位于被钉扎层和自由层之间，并且包括MgO。 第一铁磁层位于阻挡层和中间层之间。 第一铁磁层包括CoFeX和CoNiFeX中的至少一种，其中X选自B，P，Si，Nb，Zr，Hf，Ta，Ti，并且大于零原子百分比且不超过三十个原子 百分。 第一铁磁层与第二铁磁层铁磁耦合。 中间层被配置为使得第一铁磁层具有第一结晶取向，而第二铁磁层具有不同于第一铁磁层的第二晶体取向。

    Spin transfer magnetic element having low saturation magnetization free layers
    9.
    发明授权
    Spin transfer magnetic element having low saturation magnetization free layers 有权
    具有低饱和磁化自由层的自旋转移磁性元件

    公开(公告)号：US07821087B2

    公开(公告)日：2010-10-26

    申请号：US11685723

    申请日：2007-03-13

    申请人： Paul Nguyen ,  Yiming Huai ,  Zhitao Diao ,  Frank Albert

    发明人： Paul Nguyen ,  Yiming Huai ,  Zhitao Diao ,  Frank Albert

    IPC分类号： H01L29/82

    CPC分类号： H01L43/10 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/16 ,  H01F10/3263 ,  H01F10/3272 ,  H01F41/303

    摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).

    摘要翻译： 公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。 磁性元件包括固定，非磁性间隔物和自由层。 间隔层位于固定层和自由层之间。 当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。 磁性元件还可以包括阻挡层，第二被钉扎层。 或者，包括第二固定和第二间隔层和静电耦合到自由层的第二自由层。 在一个方面，自由层包括用非磁性材料稀释的铁磁材料和/或亚铁磁掺杂以提供低的饱和磁化强度。

    Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein
    10.
    发明授权
    Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein 有权
    使用其中的旋转转移和磁性元件的快速磁存储器件

    公开(公告)号：US07289356B2

    公开(公告)日：2007-10-30

    申请号：US11147944

    申请日：2005-06-08

    申请人： Zhitao Diao ,  Yiming Huai ,  Mahendra Pakala ,  Zhenghong Qian

    发明人： Zhitao Diao ,  Yiming Huai ,  Mahendra Pakala ,  Zhenghong Qian

    IPC分类号： G11C7/00

    CPC分类号： G11C11/16

    摘要： A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells, a plurality of word lines, and a plurality of bit lines. Each of the plurality of magnetic storage cells includes a plurality of magnetic elements and at least one selection transistor. Each of the plurality of magnetic elements is capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element. Each of the plurality of magnetic elements has a first end and a second end. The at least one selection transistor is coupled to the first end of each of the plurality of magnetic elements. The plurality of word lines is coupled with the plurality of selection transistors and selectively enables a portion of the plurality of selection transistors.

    摘要翻译： 描述了一种用于提供磁存储器的方法和系统。 该方法和系统包括提供多个磁存储单元，多个字线和多个位线。 多个磁存储单元中的每一个包括多个磁性元件和至少一个选择晶体管。 多个磁性元件中的每一个能够通过由磁性元件驱动的写入电流使用自旋转移感应开关来编程。 多个磁性元件中的每一个具有第一端和第二端。 所述至少一个选择晶体管耦合到所述多个磁性元件中的每一个的第一端。 多个字线与多个选择晶体管耦合，并且选择性地使能多个选择晶体管的一部分。