公开(公告)号：US07782637B2

公开(公告)日：2010-08-24

申请号：US11758529

申请日：2007-06-05

申请人： Lorenzo Maurizio Selgi ,  Leonardo Fragapane ,  Luigi Arcuri

发明人： Lorenzo Maurizio Selgi ,  Leonardo Fragapane ,  Luigi Arcuri

IPC分类号： H02M7/10 ,  H02M1/00

CPC分类号： H02M1/36 ,  H02M3/33507 ,  Y10S323/901

摘要： An electronic power device for controlling a load includes: a high-voltage integrated switch having an output terminal to be connected to the load; an integrated, and low-voltage driving circuit for driving the switch, and a start-up integrated circuit comprising a high-voltage resistor and such that it can be enabled, during a step of turning on the power device, in order to activate the driving circuit. The switch and the start-up circuit are integrated in a first semiconductor chip and the driving circuit is integrated in a different, second semiconductor chip.

摘要翻译： 一种用于控制负载的电子设备包括：具有要连接到所述负载的输出端子的高压集成开关; 用于驱动开关的集成和低压驱动电路，以及包括高压电阻器的启动集成电路，并且使得能够在打开电源装置的步骤期间使能，以激活 驱动电路。 开关和启动电路集成在第一半导体芯片中，并且驱动电路集成在不同的第二半导体芯片中。

公开(公告)号：US20080002446A1

公开(公告)日：2008-01-03

申请号：US11758529

申请日：2007-06-05

申请人： Lorenzo Selgi ,  Leonardo Fragapane ,  Luigi Arcuri

发明人： Lorenzo Selgi ,  Leonardo Fragapane ,  Luigi Arcuri

IPC分类号： H02M1/00

CPC分类号： H02M1/36 ,  H02M3/33507 ,  Y10S323/901

摘要： An electronic power device for controlling a load includes: a high-voltage integrated switch having an output terminal to be connected to the load; an integrated, and low-voltage driving circuit for driving the switch, and a start-up integrated circuit comprising a high-voltage resistor and such that it can be enabled, during a step of turning on the power device, in order to activate the driving circuit. The switch and the start-up circuit are integrated in a first semiconductor chip and the driving circuit is integrated in a different, second semiconductor chip.

摘要翻译： 一种用于控制负载的电子设备包括：具有要连接到所述负载的输出端子的高压集成开关; 用于驱动开关的集成和低压驱动电路，以及包括高压电阻器的启动集成电路，并且使得能够在打开电源装置的步骤期间使能，以激活 驱动电路。 开关和启动电路集成在第一半导体芯片中，并且驱动电路集成在不同的第二半导体芯片中。

公开(公告)号：US06518815B2

公开(公告)日：2003-02-11

申请号：US09759599

申请日：2001-01-11

申请人： Antonio Grimaldi ,  Luigi Arcuri ,  Salvatore Pisano

发明人： Antonio Grimaldi ,  Luigi Arcuri ,  Salvatore Pisano

IPC分类号： H03K508

CPC分类号： H03K17/0822 ,  H03K17/08122

摘要： A MOS-type power device having a drain terminal, a source terminal, and a gate terminal; and a protection circuit having a first conduction terminal connected to the gate terminal, via a diffused resistor, and a second conduction terminal connected to the source terminal. The protection circuit has a resistance variable between a first value and a second value according to the operating condition of the power device. In a first embodiment of the protection circuit, an ON-OFF switch made by means of a horizontal MOS transistor has a control terminal connected to the drain terminal of the power device. In a second embodiment of the protection circuit, the ON-OFF switch is replaced with a gradual-intervention switch made by means of a P-channel JFET transistor having a control terminal connected to the gate terminal of the power device.

摘要翻译： 具有漏极端子，源极端子和栅极端子的MOS型功率器件; 以及保护电路，其具有经由扩散电阻器连接到所述栅极端子的第一导电端子和连接到所述源极端子的第二导电端子。 根据功率器件的工作状态，保护电路具有第一值和第二值之间的电阻变化。 在保护电路的第一实施例中，通过水平MOS晶体管制成的导通开关具有连接到功率器件的漏极端子的控制端子。 在保护电路的第二实施例中，通过利用具有连接到功率器件的栅极端子的控制端子的P沟道JFET晶体管制成的逐步干预开关代替ON-OFF开关。

公开(公告)号：US4530783A

公开(公告)日：1985-07-23

申请号：US356344

申请日：1982-03-09

申请人： Luigi Arcuri ,  Elvio Bertotti ,  Giancarlo Carignani ,  Aldo Cipriani ,  Aldo Donato ,  Giuseppe Grossi

发明人： Luigi Arcuri ,  Elvio Bertotti ,  Giancarlo Carignani ,  Aldo Cipriani ,  Aldo Donato ,  Giuseppe Grossi

IPC分类号： C08G63/00 ,  C08F299/00 ,  C08F299/04 ,  C08G63/52 ,  C08L67/00 ,  C08L67/06 ,  G21F9/00 ,  G21F9/16 ,  G21F9/30

CPC分类号： G21F9/167 ,  C08K3/00

摘要： A composition of matter suitable for solidifying radioactive wastes is formed of unsaturated polyester resins comprising a polyester (I) obtained polycondensing (a) maleic anhydride and/or maleic and/or fumaric acid, (b) isophthalic and/or terephthalic acid, (c) neopentylglycol, (d) optionally one or more conventional glycols, wherein the amount of (c) is at least 50% by moles with respect to (c)+(d); another polyester (II) obtained polycondensing (a) maleic anhydride and/or maleic and/or fumaric acid, (b) isopropylidene-bis-(phenylene-oxypropanol-2), (c) optionally one or more conventional glycols, wherein the amount of (b) is at least 50% by moles with respect to (b)+(c); an ethylenically unsaturated monomer (III) capable of copolymerizing with (I) and (II); inhibitors, initiators, accelerators, glass fibers and other conventional additives and fillers the weight ratio of component (I) to (II) being from 100:0 to 20:80.

摘要翻译： 适用于固化放射性废物的物质组合物由不饱和聚酯树脂形成，所述不饱和聚酯树脂包含获得的缩聚（a）马来酸酐和/或马来酸和/或富马酸的聚酯（I），（b）间苯二甲酸和/或对苯二甲酸，（c ）新戊二醇，（d）任选的一种或多种常规二醇，其中（c）的量相对于（c）+（d）为至少50摩尔％; 获得缩聚（a）马来酸酐和/或马来酸和/或富马酸的另一种聚酯（II），（b）异亚丙基 - 双 - （亚苯基 - 氧基丙醇-2），（c）任选的一种或多种常规二醇，其中 （b）相对于（b）+（c）为至少50摩尔％; 能够与（I）和（II）共聚的烯属不饱和单体（III）; 抑制剂，引发剂，促进剂，玻璃纤维和其它常规添加剂和填料，组分（I）与（II）的重量比为100:0至20:80。

公开(公告)号：US08044462B2

公开(公告)日：2011-10-25

申请号：US12029935

申请日：2008-02-12

申请人： Monica Micciche ,  Antonio Giuseppe Grimaldi ,  Luigi Arcuri

发明人： Monica Micciche ,  Antonio Giuseppe Grimaldi ,  Luigi Arcuri

IPC分类号： H01L21/66

CPC分类号： H01L29/7811 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/66712 ,  H01L29/7802

摘要： An electronic device includes a semiconductor substrate of a first conductivity type and a drain layer adjacent the semiconductor substrate and having a plurality of drains. The drain layer includes a first semiconductor layer of the first conductivity type adjacent the semiconductor substrate, and at least one second semiconductor layer of a second conductivity type adjacent the first semiconductor layer. Moreover, a plurality of first column regions of the first conductivity type extends through the at least one second semiconductor layer to contact the first semiconductor layer. A plurality of second column regions of the second conductivity type delimits the plurality of first column regions. Furthermore, a plurality of body regions of the second conductivity type are adjacent respective ones of the plurality of second column regions.

摘要翻译： 电子器件包括第一导电类型的半导体衬底和与半导体衬底相邻并具有多个漏极的漏极层。 漏极层包括与半导体衬底相邻的第一导电类型的第一半导体层以及与第一半导体层相邻的至少一个第二导电类型的第二半导体层。 此外，第一导电类型的多个第一列区域延伸穿过至少一个第二半导体层以接触第一半导体层。 第二导电类型的多个第二列区限定多个第一列区。 此外，第二导电类型的多个体区域与多个第二列区域中的相应的一个相邻。

公开(公告)号：US20080169519A1

公开(公告)日：2008-07-17

申请号：US12029935

申请日：2008-02-12

申请人： Monica Micciche ,  Antonio Giuseppe Grimaldi ,  Luigi Arcuri

发明人： Monica Micciche ,  Antonio Giuseppe Grimaldi ,  Luigi Arcuri

IPC分类号： H01L21/336 ,  H01L29/78

CPC分类号： H01L29/7811 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/66712 ,  H01L29/7802

摘要： An electronic device includes a semiconductor substrate of a first conductivity type and a drain layer adjacent the semiconductor substrate and having a plurality of drains. The drain layer includes a first semiconductor layer of the first conductivity type adjacent the semiconductor substrate, and at least one second semiconductor layer of a second conductivity type adjacent the first semiconductor layer. Moreover, a plurality of first column regions of the first conductivity type extends through the at least one second semiconductor layer to contact the first semiconductor layer. A plurality of second column regions of the second conductivity type delimits the plurality of first column regions. Furthermore, a plurality of body regions of the second conductivity type are adjacent respective ones of the plurality of second column regions.

摘要翻译： 电子器件包括第一导电类型的半导体衬底和与半导体衬底相邻并具有多个漏极的漏极层。 漏极层包括与半导体衬底相邻的第一导电类型的第一半导体层以及与第一半导体层相邻的至少一个第二导电类型的第二半导体层。 此外，第一导电类型的多个第一列区域延伸穿过至少一个第二半导体层以接触第一半导体层。 第二导电类型的多个第二列区限定多个第一列区。 此外，第二导电类型的多个体区域与多个第二列区域中的相应的一个相邻。