摘要:
An input transition stabilizer circuit, adapted to stabilize an input transition of a signal appearing at the input of an input circuit, the input transition stabilizer circuit includes a resistor having a first terminal connected to the input of the input circuit;, and a capacitor. A first MOS device is connected by a source and a drain between a second terminal of the resistor and a first terminal of the capacitor, while a second MOS device is connected by a source and a drain between a second terminal of the capacitor and ground. A delay circuit is adapted to provide a signal to a gate of the first MOS device and a gate of the second MOS device corresponding to a signal at the input of the input circuit, but delayed by a first predetermined interval. In some embodiments the delay circuit is provided in two parts, with the signal provided to the first MOS device being delayed by a further amount, as compared with the signal provided to the second MOS device.
摘要:
An interface circuit for a printer to prevent transmission of an incorrect control signal when power is input into the printer. The interface circuit improves the stability of the printer at the initial state of the rise of power supply voltages, and prevents erroneous operation. After power is input, in a switching control part 110, a flip-flop X23 is reset, a level change of output signals s1-s5 of an input part 100 is detected by a NAND gate X21, and an output signal s9 of the flip-flop X23 is raised. In a switching part 120, when the signal s9 is at low level, output signals s10-s14 are held at high level, and when the signal s9 is at high level, the output signals s1-s5 of the input part 100 are output to an output part 130. Thus, the output signals are held after the power input, and after the input signal rises, the signal transfer function is started, so that the output of incorrect control signals can be prevented, and thereby erroneous operation of a printer can be prevented.
摘要:
A comparator, having an offset of 0.1V, compares a terminal voltage Vin1 with a clamp voltage VCL (5.1V). When an overvoltage input exceeding the VCL is entered to an input terminal, the comparator turns on a transistor Q11. The current flows across an externally provided resistor R11, the input terminal, and the transistor Q11, and flows into an output terminal of an operational amplifier. With a voltage drop at the resistor R11, the terminal voltage Vin1 starts decreasing toward an output voltage Vc of the operational amplifier.
摘要:
A method and apparatus that restrict the differential output voltage (VOD) for an LVDS input buffer is provided. Specifically, VOD is prevented from exceeding a predetermined threshold. The input and output common-mode voltage, as well as the input and output differential voltage swing, are maintained during the VOD restriction. The VOD restriction reduces output jitter of the LVDS input buffer and provides a more robust LVDS system as compared to an LVDS system not using a VOD restriction circuit. Clamping circuits are used to restrict the VOD. Each half of the differential output voltage may be clamped to restrict the differential output voltage. The clamping circuits are activated in response to the VOD reaching the predetermined threshold. When a clamping circuit is active, an alternate current path is provided maintaining the level of the signal before clamping.
摘要:
A high voltage tolerant CMOS input/output interface circuit. In this circuit, a process feature called “dual-gate” or “thick-oxide” process is used on any devices that will be exposed to high voltage. The thick-oxide devices have a larger capacitance and lower bandwidth, and therefore, preferably, they are only used where exposure to high voltage can cause damage. The remaining devices on the interface circuit may all use a standard process with the thinner oxide, allowing the I/O and the core IC to run at maximum speed. The circuit design topology also limits the number of devices that are exposed to high voltage. Preferably, the protection scheme is broken down into two parts: the driver and receiver.
摘要:
A semiconductor device is provided with a signal terminal, a high potential side power supply terminal, a low potential side power supply terminal, a first wiring connected to the high potential side power supply terminal, a second wiring connected to the low potential side power supply terminal, and an internal circuit to which power is supplied from the first and second wirings. Further the semiconductor device is provided with a first and a second resistance elements whose one end is connected to a first node, a first protection element having a first terminal connected to the first wiring and a second terminal connected to the other end of the first resistance element, a second protection element having a third terminal connected to the other end of the second resistance element and a fourth terminal connected to the second wiring, and a third protection element having a fifth terminal connected to the first wiring and a sixth terminal connected to the second wiring.
摘要:
The circuit configuration, in particular a DRAM element, has a protection device for suppressing the formation and/or emission of a reflection signal caused by a received supply input signal. An active signal matching device is provided, with which it is possible to prevent the formation of a reflection signal by using the input signal.
摘要:
A semiconductor device is provided with a signal terminal, a high potential side power supply terminal, a low potential side power supply terminal, a first wiring connected to the high potential side power supply terminal, a second wiring connected to the low potential side power supply terminal, and an internal circuit to which power is supplied from the first and second wirings. Further the semiconductor device is provided with a first and a second resistance elements whose one end is connected to a first node, a first protection element having a first terminal connected to the first wiring and a second terminal connected to the other end of the first resistance element, a second protection element having a third terminal connected to the other end of the second resistance element and a fourth terminal connected to the second wiring, and a third protection element having a fifth terminal connected to the first wiring and a sixth terminal connected to the second wiring.
摘要:
Receiver circuit providing interface between a legacy system sourcing logic signals including high logic level signals at first voltage levels to semiconductor IC devices operating at second voltage levels, wherein the first voltage levels are greater than the second voltage levels. The receiver circuit comprises: a pass gate device receiving the input voltages including high level logic signals at first logic levels and translating the high logic level signals to an intermediate voltage level for output at a first circuit node, the intermediate voltage level being less than the first voltage level; a first inverter device for receiving the translated voltages at the intermediate voltage levels and inverting the voltages for output at a second circuit node, whereby high input logic level voltages are pulled down at the second node and low input logic level voltages are pulled up at the second node; a circuit element in series with the first inverter device for connecting the first inverter device to a voltage supply source that provides pulled up signals at the second voltage levels in response to low logic level input voltages; and, a circuit responsive to pulled down voltage at the second node for deactivating the first circuit element to thereby prevent leakage current to ground through the first inverter device. Stable switching of voltages is achieved at the second node in a manner that eliminates leakage current between the voltage supply source providing pulled up signals at the second voltage levels and the receiver input.
摘要:
An integrated circuit is disclosed in which a steering diode is coupled between an input bond pad and a ground bond pad. The steering diode is reverse biased when a voltage applied to the input bond pad exceeds the voltage at the ground bond pad. A circuit coupled between the input bond pad and the ground bond pad includes a transistor having a first electrode coupled the input bond pad and a second electrode coupled to the ground bond pad. There may be other circuit elements between the emitter and the ground bond pad. At least two series coupled diodes are coupled between the input bond pad and the ground bond pad. The at least two series coupled diodes provide ESD protection to the transistor and circuit coupled between the input bond pad and the ground bond pad.