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公开(公告)号：US06542973B2
公开(公告)日：2003-04-01
申请号：US09898434
申请日：2001-07-03
IPC分类号： G06F1200
CPC分类号： G11C29/846 , G06F12/0893
摘要： An integrated redundancy eDRAM architecture system for an embedded DRAM macro system having a wide data bandwidth and wide internal bus width is disclosed which provides column and row redundancy for defective columns and rows of the eDRAM macro system. Internally generated column and row addresses of defective columns and rows of each micro-cell block are stored in a memory device, such as a fuse bank, during an eDRAM macro test mode in order for the information to be quickly retrieved during each cycle of eDRAM operation to provide an SRAM-like operation. A column steering circuit steers column redundant elements to replace defective column elements. Redundancy information is either supplied from a SRAM fuse data storage device or from a TAG memory device depending on whether a read or write operation, respectively, is being performed. The integrated redundancy eDRAM architecture system enables data to be sent and received to and from the eDRAM macro system without adding any extra delay to the data flow, thereby protecting data flow pattern integrity.
摘要翻译： 公开了一种用于具有宽数据带宽和宽内部总线宽度的嵌入式DRAM宏系统的集成冗余eDRAM架构系统，其为eDRAM宏系统的有缺陷的列和行提供列和行冗余。 在eDRAM宏测试模式期间，每个微小区块的有缺陷的列和行的内部生成的列和行地址存储在诸如保险丝库的存储器件中，以便在eDRAM的每个周期期间快速检索信息 操作提供类似SRAM的操作。 列转向电路引导列冗余元件来替换有缺陷的列元素。 根据是否正在执行读取或写入操作，冗余信息是从SRAM熔丝数据存储设备提供的，或者从TAG存储设备提供的。 集成冗余eDRAM架构系统使数据能够从eDRAM宏系统发送和接收数据，而不会对数据流增加任何额外的延迟，从而保护数据流模式的完整性。
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公开(公告)号：US07404113B2
公开(公告)日：2008-07-22
申请号：US11031138
申请日：2005-01-07
IPC分类号： G11C29/00
CPC分类号： G11C29/808
摘要： A row redundancy system is provided for replacing faulty wordlines of a memory array having a plurality of banks. The row redundancy system includes a remote fuse bay storing at least one faulty address corresponding to a faulty wordline of the memory array; a row fuse array for storing row fuse information corresponding to at least one bank of the memory array; and a copy logic module for copying at least one faulty address stored in the remote fuse bay into the row fuse array; the copy logic module is programmed to copy the at least one faulty address into the row fuse information stored in the row fuse array corresponding to a predetermined number of banks in accordance with a selectable repair field size.
摘要翻译： 提供了一种用于替换具有多个存储体的存储器阵列的有缺陷的字线的行冗余系统。 行冗余系统包括存储与存储器阵列的故障字线相对应的至少一个故障地址的远程熔丝架; 用于存储对应于所述存储器阵列的至少一个组的行熔丝信息的行熔丝阵列; 以及复制逻辑模块，用于将存储在所述远程保险丝盒中的至少一个故障地址复制到所述行保险丝阵列中; 复制逻辑模块被编程为根据可选择的修复字段大小将至少一个故障地址复制到存储在对应于预定数量的存储体的行熔丝阵列中的行熔丝信息中。
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公开(公告)号：US20080229144A1
公开(公告)日：2008-09-18
申请号：US12131307
申请日：2008-06-02
IPC分类号： G06F11/00
CPC分类号： G11C29/808
摘要： A row redundancy system is provided for replacing faulty wordlines of a memory array having a plurality of banks. The row redundancy system includes a remote fuse bay storing at least one faulty address corresponding to a faulty wordline of the memory array; a row fuse array for storing row fuse information corresponding to at least one bank of the memory array; and a copy logic module for copying at least one faulty address stored in the remote fuse bay into the row fuse array; wherein the copy logic module is programmed to copy the at least one faulty address into the row fuse information stored in the row fuse array corresponding to a predetermined number of banks in accordance with a selectable repair field size.
摘要翻译： 提供了一种用于替换具有多个存储体的存储器阵列的有缺陷的字线的行冗余系统。 行冗余系统包括存储与存储器阵列的故障字线相对应的至少一个故障地址的远程熔丝架; 用于存储对应于所述存储器阵列的至少一个组的行熔丝信息的行熔丝阵列; 以及复制逻辑模块，用于将存储在所述远程保险丝盒中的至少一个故障地址复制到所述行保险丝阵列中; 其中所述复制逻辑模块被编程为根据可选择的修复字段大小将所述至少一个故障地址复制到对应于预定数量的存储体的行熔丝阵列中的行熔丝信息。
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公开(公告)号：US07774660B2
公开(公告)日：2010-08-10
申请号：US12131307
申请日：2008-06-02
IPC分类号： G11C29/00
CPC分类号： G11C29/808
摘要： A row redundancy system is provided for replacing faulty wordlines of a memory array having a plurality of banks. The row redundancy system includes a remote fuse bay storing at least one faulty address corresponding to a faulty wordline of the memory array; a row fuse array for storing row fuse information corresponding to at least one bank of the memory array; and a copy logic module for copying at least one faulty address stored in the remote fuse bay into the row fuse array; wherein the copy logic module is programmed to copy the at least one faulty address into the row fuse information stored in the row fuse array corresponding to a predetermined number of banks in accordance with a selectable repair field size.
摘要翻译： 提供了一种用于替换具有多个存储体的存储器阵列的有缺陷的字线的行冗余系统。 行冗余系统包括存储与存储器阵列的故障字线相对应的至少一个故障地址的远程熔丝架; 用于存储对应于所述存储器阵列的至少一个组的行熔丝信息的行熔丝阵列; 以及复制逻辑模块，用于将存储在所述远程保险丝盒中的至少一个故障地址复制到所述行保险丝阵列中; 其中所述复制逻辑模块被编程为根据可选择的修复字段大小将所述至少一个故障地址复制到对应于预定数量的存储体的行熔丝阵列中的行熔丝信息。
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公开(公告)号：US06445626B1
公开(公告)日：2002-09-03
申请号：US09821443
申请日：2001-03-29
IPC分类号： G11C700
CPC分类号： G11C29/848 , G11C29/846 , G11C2207/104
摘要： A column redundancy architecture system for an embedded DRAM (eDRAM) having a wide data bandwidth and wide internal bus width is disclosed which provides column redundancy to defective datalines of the eDRAM. Internally generated column addresses of defective columns of each micro cell block are stored in a memory device during eDRAM array testing. Two redundancy reroute mechanisms are disclosed. The first redundancy reroute mechanism selects at least one defective dataline of the eDRAM and directly replaces the defective dataline(s) with at least one redundancy dataline. The second redundancy reroute mechanism discards the defective dataline column and replaces it with an adjacent dataline column. The dataline columns following the defective dataline column are then replaced with the next adjacent dataline columns including a redundancy dataline column.
摘要翻译： 公开了一种具有宽数据带宽和宽内部总线宽度的嵌入式DRAM（eDRAM）的列冗余架构系统，其为eDRAM的缺陷数据库提供列冗余。 在eDRAM阵列测试期间，每个微单元块的内部生成的列地址存储在存储器件中。 公开了两种冗余重路由机制。 第一个冗余重路由机制选择eDRAM的至少一个有缺陷的数据库，并用至少一个冗余数据线直接替换有缺陷的数据库。 第二个冗余重路由机制丢弃有缺陷的数据列，并用相邻的数据列替换它。 随后，数据线列中的数据栏将被替换为包含冗余数据列的下一个相邻的数据列。
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公开(公告)号：US07093171B2
公开(公告)日：2006-08-15
申请号：US10115348
申请日：2002-04-03
IPC分类号： G11C29/00
CPC分类号： G11C29/808
摘要： A row redundancy system is provided for replacing faulty wordlines of a memory array having a plurality of banks. The row redundancy system includes a remote fuse bay storing at least one faulty address corresponding to a faulty wordline of the memory array; a row fuse array for storing row fuse information corresponding to at least one bank of the memory array; and a copy logic module for copying at least one faulty address stored in the remote fuse bay into the row fuse array; the copy logic module is programmed to copy the at least one faulty address into the row fuse information stored in the row fuse array corresponding to a predetermined number of banks in accordance with a selectable repair field size.
摘要翻译： 提供了一种用于替换具有多个存储体的存储器阵列的有缺陷的字线的行冗余系统。 行冗余系统包括存储与存储器阵列的故障字线相对应的至少一个故障地址的远程熔丝架; 用于存储对应于所述存储器阵列的至少一个组的行熔丝信息的行熔丝阵列; 以及复制逻辑模块，用于将存储在所述远程保险丝盒中的至少一个故障地址复制到所述行保险丝阵列中; 复制逻辑模块被编程为根据可选择的修复字段大小将至少一个故障地址复制到存储在对应于预定数量的存储体的行熔丝阵列中的行熔丝信息中。
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7.发明授权Method and structure for enabling a redundancy allocation during a multi-bank operation 失效在多行操作期间实现冗余分配的方法和结构公开(公告)号：US07085180B2
公开(公告)日：2006-08-01
申请号：US10777596
申请日：2004-02-12
CPC分类号： G11C29/4401 , G11C29/40 , G11C29/44 , G11C29/808 , G11C2029/0401 , G11C2029/2602
摘要： A method for allocating redundancies during a multi-bank operation in a memory device which includes two or more redundancy domains is described. The method includes steps of enabling a pass/fail bit detection to activate a given bank. The pass/fail bit detection is prompted only for a selected domain and is disabled when it addresses other domains. By altering the domain selection, it is possible to enable a redundancy allocation for any domain regardless of the multi-bank operation. The method may preferably be realized by using a dynamic exclusive-OR logic with true and complement expected data pairs. When combined with simple pointer logic, the selection of domains may be generated internally, simplifying the built in self-test and other test control protocols, while at the same time tracking those that fail.
摘要翻译： 描述了在包括两个或更多个冗余域的存储器设备中在多存储体操作期间分配冗余的方法。 该方法包括启用通过/故障位检测来激活给定的存储体的步骤。 通过/失败位检测仅对选定的域提示，并且在寻址其他域时被禁用。 通过改变域选择，无论多行操作如何，都可以为任何域启用冗余分配。 该方法可以优选地通过使用具有真实和补充预期数据对的动态异或逻辑来实现。 当结合简单的指针逻辑时，可以内部生成域的选择，简化内置的自检和其他测试控制协议，同时跟踪失败的那些。
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公开(公告)号：US07046572B2
公开(公告)日：2006-05-16
申请号：US10250233
申请日：2003-06-16
IPC分类号： G11C7/00
摘要： A memory system includes a memory array, a plurality of wordline drivers, a row address decoder block which has a plurality of outputs connected to selected ones of the wordline drivers, a row selector block which has a selector lines connected to individual ones of the wordline drivers. A power management circuit having a power down input for a power down input signal (WLPWRDN) and a wordline power down output (WLPDN) is connected to the wordline drivers to lower the power consumption thereof as a function of the power down input signal.
摘要翻译： 存储器系统包括存储器阵列，多个字线驱动器，行地址解码器块，其具有连接到所选择的字线驱动器的多个输出;行选择器块，其具有连接到字线的各个字符的选择器线 司机。 具有用于断电输入信号（WLPWRDN）和字线掉电输出（WLPDN）的掉电输入的功率管理电路被连接到字线驱动器，以根据掉电输入信号降低其功耗。
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公开(公告)号：US07817455B2
公开(公告)日：2010-10-19
申请号：US12065202
申请日：2006-08-30
IPC分类号： G11C17/00
CPC分类号： G11C17/16 , G11C17/165 , G11C29/027
摘要： A one-time-programmable-read-only-memory (OTPROM) is implemented in a two-dimensional array of aggressively scaled suicide migratable e-fuses. Word line selection is performed by decoding logic operating at VDD while the bit line drive is switched between VDD and a higher voltage, Vp, for programming. The OTPROM is thus compatible with and can be integrated with other technologies without a cost adder and supports optimization of the high current path for minimal voltage drop during fuse programming. A differential sense amplifier with a programmable reference is used for improved sense margins and can support an entire bit line rather than sense amplifiers being provided for individual fuses.
摘要翻译： 一次性可编程只读存储器（OTPROM）在二维阵列中实现，这些阵列具有大规模的自杀可迁移电子保险丝。 通过在VDD处工作的解码逻辑执行字线选择，同时位线驱动器在VDD和较高电压Vp之间切换，用于编程。 因此，OTPROM与其他技术兼容，并且可以与其他技术集成，而无需使用成本加法器，并支持在熔丝编程期间最小化电压降的高电流路径的优化。 具有可编程参考的差分读出放大器用于改进的检测余量，并且可以支持整个位线，而不是为各个保险丝提供感测放大器。
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公开(公告)号：US20080316789A1
公开(公告)日：2008-12-25
申请号：US12065202
申请日：2006-08-30
CPC分类号： G11C17/16 , G11C17/165 , G11C29/027
摘要： A one-time-programmable-read-only-memory (OTPROM) is implemented in a two-dimensional array of aggressively scaled suicide migratable e-fuses. Word line selection is performed by decoding logic operating at VDD while the bit line drive is switched between VDD and a higher voltage, Vp for programming. The OTPROM is thus compatible with and can be integrated with other technologies without a cost adder and supports optimization of the high current path for minimal voltage drop during fuse programming. A differential sense amplifier with a programmable reference is used for improved sense margins and can support an entire bit line rather than sense amplifiers being provided for individual fuses.
摘要翻译： 一次性可编程只读存储器（OTPROM）在二维阵列中实现，这些阵列具有大规模的自杀可迁移电子保险丝。 字线选择通过在VDD处工作的解码逻辑进行，而位线驱动器在VDD和较高电压Vp之间切换，用于编程。 因此，OTPROM与其他技术兼容，并且可以与其他技术集成，而无需使用成本加法器，并支持在熔丝编程期间最小化电压降的高电流路径的优化。 具有可编程参考的差分读出放大器用于改进的检测余量，并且可以支持整个位线，而不是为各个保险丝提供感测放大器。
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