摘要:
A Eu-doped CsBr-type storage phosphor screen or panel has been disclosed, providing ratios of ultraviolet luminescence intensities of at least 10/9 after having been exposed to radiation having a wavelength in the range from 150 to 400 nm, measured at same sites without and with pretreatment exposure of said storage phosphor screen or panel with short ultraviolet radiation in the range from 150 to 300 nm and having an energy of 10 mJ/mm2, as well as a method of producing a stimulable phosphor screen or panel, characterized in that during or after at least one of the manufacturing steps a radiation exposure treatment is given with radiation sources emitting short ultraviolet radiation in the range from 150 to 300 nm with an energy of at least 10 mJ/mm2.
摘要翻译:已经公开了Eu掺杂的CsBr型存储荧光屏或面板,其在暴露于波长在150至400nm的辐射之后提供至少10/9的紫外发光强度的比率,在相同的位置 所述存储荧光屏或面板在150-300nm范围内具有短的紫外线辐射并具有10mJ / mm 2的能量的预处理曝光,以及一种制备 其特征在于,在至少一个制造步骤期间或之后,对发射150至300nm范围内的短紫外线辐射的辐射源进行辐射曝光处理,其能量至少为10mJ / mm 2 SUP>。
摘要:
A method of preparing a stimulable phosphor layer comprising a phosphor composed of a host or matrix compound and a dopant or activator compound or element wherein a precipitate or inclusion having a size in the range from 10−3 μm up to 10 μm is present in said matrix compound, proceeds by the steps of (1) providing one or more crucibles containing precursor compounds for said host, said dopant and said precipitate, by increasing the temperature of said crucible(s) up to a temperature provoking evaporation of all of said precursor compounds as a vaporized latent phosphor cloud, (2) depositing said vaporized latent phosphor cloud in form of a layer onto a temperature controlled substrate, (3) followed by cooling said substrate, and (4) further annealing said phosphor layer at a temperature in the range from 35° C. up to 200° C., wherein said method is characterized by performing said annealing in an atmosphere having a water content of more than 10 g per m3 of dry air at the temperature at which annealing proceeds. In a further embodiment the temperature of the said substrate as presented in the annealing atmosphere when starting annealing, is lower than the dew point of water in said atmosphere.
摘要:
In a storage phosphor sheet, plate or panel, comprising a needle-shaped storage or photostimulable phosphor, said needle-shaped phosphor comprising a host or matrix compound and a dopant or activator compound or element in an amount of less than 0.01 mole % versus said host or matrix compound, said needle-shaped phosphor further comprises, as inclusions or precipitates, particles having a size in the range from 10−3 μm up to 10 μm, wherein said particles are present as ferroelectric particles, providing said panel with ferro-electric properties.
摘要:
An optical memory plate particularly suitable for identification purposes or protection against forgery and counterfeiting radiation provides inscription of data and read-out of thus stored inscription data, comprises a europium doped alkali metal halide storage phosphor layer, and, more preferably, a stimulable CsBr:Eu phosphor substantially free of alkaline earth metals.
摘要:
A Eu-doped CsBr-type storage phosphor screen or panel has been disclosed, providing ratios of ultraviolet luminescence intensities of at least 10/9 after having been exposed to radiation having a wavelength in the range from 150 to 400 nm, measured at same sites without and with pretreatment exposure of said storage phosphor screen or panel with short ultraviolet radiation in the range from 150 to 300 nm and having an energy of 10 mJ/mm2, as well as a method of producing a stimulable phosphor screen or panel, characterized in that during or after at least one of the manufacturing steps a radiation exposure treatment is given with radiation sources emitting short ultraviolet radiation in the range from 150 to 300 nm with an energy of at least 10 mJ/mm2.
摘要翻译:已经公开了Eu掺杂的CsBr型存储荧光屏或面板,其在暴露于波长在150至400nm的辐射之后提供至少10/9的紫外发光强度的比率,在相同的位置 所述存储荧光屏或面板在150-300nm范围内具有短紫外线辐射并具有10mJ / mm 2的能量的预处理曝光以及产生可刺激荧光屏或面板的方法 其特征在于,在所述制造步骤中的至少一个之后或之后,以150-300纳米的能量至少为10mJ / mm 2的发射短的紫外线辐射的辐射源给予辐射曝光处理。
摘要:
In a method of reading a radiation image, stored in a CsBr:Eu type binderless needle-shaped photostimulable or storage phosphor screen after X-ray exposure of said screen, said method comprises the steps of: (1) erasing thermally stimulable energy by exposing said screen to infrared radiation in the wavelength range from 1000 nm to 1550 nm; (2) stimulating said phosphor screen by means of stimulating radiation in the range from 550 to 850 nm; (3) detecting light emitted by the phosphor screen upon stimulation and converting the detected light into a signal representation of said radiation image; (4) erasing said phosphor screen by exposing it to erasing light in the wavelength range of 300 nm to 1500 nm.
摘要:
A device comprises at least one organophosphonium transition metal dye or is provided with a filter, comprising at least one organophosphonium transition metal dye, wherein, in a particular embodiment said device is selected from the group consisting of a scanner, a digitizer, a display and a photographic device.
摘要:
A CsBr:Eu phosphor showing a narrow emission spectrum upon UV-excitation and panels including such a phosphor are disclosed. Also methods for preparing such a phosphor have been described.
摘要:
An elpasolite phosphor is provided corresponding to the general formula: A2−yB1+yMe3+X6:xD wherein: A=a monovalent ion B=a monovalent ion A is different from B Me3+=a trivalent ion D is a dopant X is at least one of F, Cl, Br and I 0≦y≦1 0≦x≦0.2 and wherein said phosphor has a specific gravity (sg)≧4. An elpasolite phosphor corresponding to the general formula above is especially useful in the production of prompt emitting X-ray screens and in the production of X-ray energy storage screens.
摘要:
A method for reading an electron beam image that has been stored in a photostimulable phosphor screen wherein the photostimulable phosphor screen is scanned with stimulating radiation and wherein light emitted upon stimulation is converted in to a digital image signal. Enhanced sensitivity is obtained by heating the screen in between exposure to the electron beam image and stimulation of the screen.