Abstract:
Luminescent materials and the use of such materials in anti-counterfeiting, inventory, photovoltaic, and other applications are described herein. In one embodiment, a luminescent material has the formula: [AaBbXxX′x′X″x″][dopants], wherein A is selected from at least one of elements of Group IA; B is selected from at least one of elements of Group VA, elements of Group IB, elements of Group IIB, elements of Group IIIB, elements of Group IVB, and elements of Group VB; X, X′, and X″ are independently selected from at least one of elements of Group VIIB; the dopants include electron acceptors and electron donors; a is in the range of 1 to 9; b is in the range of 1 to 5; and x, x′, and x″ have a sum in the range of 1 to 9. The luminescent material exhibits photoluminescence having: (a) a quantum efficiency of at least 20 percent; (b) a spectral width no greater than 100 nm at Full Width at Half Maximum; and (c) a peak emission wavelength in the near infrared range.
Abstract:
Luminescent materials and the use of such materials in anti-counterfeiting, inventory, photovoltaic, and other applications are described herein. In one embodiment, a luminescent material has the formula: [AaBbXxX′x′X″x″][dopants], wherein A is selected from at least one of elements of Group IA; B is selected from at least one of elements of Group VA, elements of Group IB, elements of Group IIB, elements of Group IIIB, elements of Group IVB, and elements of Group VB; X, X′, and X″ are independently selected from at least one of elements of Group VIIB; the dopants include electron acceptors and electron donors; a is in the range of 1 to 9; b is in the range of 1 to 5; and x, x′, and x″ have a sum in the range of 1 to 9. The luminescent material exhibits photoluminescence having: (a) a quantum efficiency of at least 20 percent; (b) a spectral width no greater than 100 nm at Full Width at Half Maximum; and (c) a peak emission wavelength in the near infrared range.
Abstract translation:本文描述了发光材料以及这些材料在防伪,库存,光伏和其它应用中的用途。 在一个实施方案中,发光材料具有以下分子式:[A a] a B b B x X x'x' “掺杂剂”,其中A选自组IA的至少一个元素; B选自VA组的元素,IB组元素,IIB族元素,IIIB族元素,IVB族元素和VB族元素中的至少一种; X,X'和X“独立地选自VIIB族元素中的至少一种; 掺杂剂包括电子受体和电子给体; a在1到9的范围内; b在1〜5的范围内; 并且x,x'和x“具有在1至9范围内的和。发光材料表现出光致发光,其具有:(a)至少20%的量子效率; (b)半宽度全宽下的光谱宽度不大于100nm; 和(c)近红外范围的峰值发射波长。
Abstract:
A stimulable phosphor sheet is prepared by applying an electron beam to a stimulable phosphor or its source in a vacuum to vaporize a phosphor or its source and depositing the vaporized phosphor or source on the support, under the condition that the electron beam is applied to the stimulable phosphor or source at an accelerating voltage of 1.5 kV to 5.0 kV. The stimulable phosphor or its source is preferably in the form of a solid having a relative density of 80% to 98%.
Abstract:
An elpasolite phosphor is provided corresponding to the general formula: A2−yB1+yMe3+X6:xD wherein: A=a monovalent ion B=a monovalent ion A is different from B Me3+=a trivalent ion D is a dopant X is at least one of F, Cl, Br and I 0≦y≦1 0≦x≦0.2 and wherein said phosphor has a specific gravity (sg)≧4. An elpasolite phosphor corresponding to the general formula above is especially useful in the production of prompt emitting X-ray screens and in the production of X-ray energy storage screens.
Abstract:
A stimulable phosphor sheet is prepared by applying an electron beam to a stimulable phosphor or its source in a vacuum to vaporize a phosphor or its source and depositing the vaporized phosphor or source on the support, under the condition that the electron beam is applied to the stimulable phosphor or source at an accelerating voltage of 1.5 kV to 5.0 kV. The stimulable phosphor or its source is preferably in the form of a solid having a relative density of 80% to 98%.
Abstract:
A stimulable phosphor sheet is prepared by applying an electron beam to a stimulable phosphor or its source in a vacuum to vaporize a phosphor or its source and depositing the vaporized phosphor or source on the support, under the condition that the electron beam is applied to the stimulable phosphor or source at an accelerating voltage of 1.5 kV to 5.0 kV. The stimulable phosphor or its source is preferably in the form of a solid having a relative density of 80% to 98%.
Abstract:
A bismuth activated alkali metal halide phosphor having the formula (I):M.sup.I X:xBi (I)in which M.sup.I is at least one alkali metal selected from the group consisting of Rb and Cs; X is at least one halogen selected from the group consisting of Cl, Br and I; and x is a number satisfying the condition of 0
Abstract:
A bismuth activated alkali metal halide phosphor having the formula (I):M.sup.I X:xBi (I)in which M.sup.I is at least one alkali metal selected from the group consisting of Rb and Cs; X is at least one halogen selected from the group consisting of Cl, Br and I; and x is a number satisfying the condition of 0
Abstract:
Provided is a scintillator having a crystal containing CsI (cesium iodide) as a host material thereof and thallium (Tl) and bismuth (Bi), and a novel scintillator which maintains a high output and simultaneously can further enhance the afterglow characteristics. There is proposed a scintillator having a crystal containing CsI (cesium iodide) as a host material thereof and Tl, Bi and O, wherein the concentration a of Bi with respect to Cs in the crystal is 0.001 atomic ppm≦a≦5 atomic ppm; and the ratio (a/b) of the concentration a of Bi with respect to Cs in the crystal to the concentration b of O with respect to I in the crystal is 0.005×10−4 to 200×10−4.
Abstract:
Provided is a scintillator having a crystal containing CsI (cesium iodide) as a host material thereof and thallium (Tl) and bismuth (Bi), and a novel scintillator which maintains a high output and simultaneously can further enhance the afterglow characteristics. There is proposed a scintillator having a crystal containing CsI (cesium iodide) as a host material thereof and Tl, Bi and O, wherein the concentration a of Bi with respect to Cs in the crystal is 0.001 atomic ppm≦a≦5 atomic ppm; and the ratio (a/b) of the concentration a of Bi with respect to Cs in the crystal to the concentration b of O with respect to I in the crystal is 0.005×10−4 to 200×10−4.