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    Chemically amplified silsesquioxane resist compositions
    1.
    发明授权
    Chemically amplified silsesquioxane resist compositions 有权
    化学扩增倍半硅氧烷抗蚀剂组合物

    公开(公告)号：US08426113B2

    公开(公告)日：2013-04-23

    申请号：US12856338

    申请日：2010-08-13

    申请人： Luisa Dominica Bozano ,  Blake W. Davis ,  Alshakim Nelson ,  Jitendra Singh Rathore ,  Linda Karin Sundberg

    发明人： Luisa Dominica Bozano ,  Blake W. Davis ,  Alshakim Nelson ,  Jitendra Singh Rathore ,  Linda Karin Sundberg

    IPC分类号： G03F7/075 ,  G03F7/038 ,  G03F7/20 ,  G03F7/30 ,  G03F7/40

    CPC分类号： G03F7/0382 ,  G03F7/0757

    摘要： The present invention provides chemically amplified silsesquioxane polymers for preparing masks using e-beam lithography. The silsesquioxane polymers have reactive sidechains that in the presence of an acid undergo acid catalyzed rearrangement to generate reactive functionalities that crosslink to form Si—O—Si bonds. The reactive side-chains comprise β- and γ-substituted alkyl groups bound to the silicon of the silsesquioxane polymer. The substituent of the β- and γ-substituted alkyl group is an electron withdrawing group. Resists generated with the chemically amplified silsesquioxane polymers of the present invention and imaged with e-beams have resolution of ≦60 nm line/space.

    摘要翻译： 本发明提供用于使用电子束光刻制备掩模的化学放大倍半硅氧烷聚合物。 倍半硅氧烷聚合物具有在酸存在下经历酸催化重排以产生交联以形成Si-O-Si键的反应性官能团的反应性侧链。 反应性侧链包含与倍半硅氧烷聚合物的硅结合的β-取代的和取代的烷基。 β-和γ-取代的烷基的取代基是吸电子基团。 用本发明的化学放大倍半硅氧烷聚合物生成并用电子束成像的抗蚀剂具有@ 60nm线/空间的分辨率。

    CHEMICALLY AMPLIFIED SILSESQUIOXANE RESIST COMPOSITIONS
    2.
    发明申请
    CHEMICALLY AMPLIFIED SILSESQUIOXANE RESIST COMPOSITIONS 有权
    化学放大硅烷氧化物组合物

    公开(公告)号：US20120040289A1

    公开(公告)日：2012-02-16

    申请号：US12856338

    申请日：2010-08-13

    申请人： Luisa Dominica Bozano ,  Blake W. Davis ,  Alshakim Nelson ,  Jitendra Singh Rathore ,  Linda Karin Sundberg

    发明人： Luisa Dominica Bozano ,  Blake W. Davis ,  Alshakim Nelson ,  Jitendra Singh Rathore ,  Linda Karin Sundberg

    IPC分类号： G03F7/20 ,  G03F7/004

    CPC分类号： G03F7/0382 ,  G03F7/0757

    摘要： The present invention provides chemically amplified silsesquioxane polymers for preparing masks using e-beam lithography. The silsesquioxane polymers have reactive sidechains that in the presence of an acid undergo acid catalyzed rearrangement to generate reactive functionalities that crosslink to form Si—O—Si bonds. The reactive side-chains comprise β- and γ-substituted alkyl groups bound to the silicon of the silsesquioxane polymer. The substituent of the β- and γ-substituted alkyl group is an electron withdrawing group. Resists generated with the chemically amplified silsesquioxane polymers of the present invention and imaged with e-beams have resolution of ≦60 nm line/space.

    摘要翻译： 本发明提供用于使用电子束光刻制备掩模的化学放大倍半硅氧烷聚合物。 倍半硅氧烷聚合物具有在酸存在下经历酸催化重排以产生交联以形成Si-O-Si键的反应性官能团的反应性侧链。 反应性侧链包含与倍半硅氧烷聚合物的硅结合的β-和γ-取代的烷基。 取代基和取代基的取代基是吸电子基团。 用本发明的化学放大倍半硅氧烷聚合物产生的并用电子束成像的抗蚀剂具有60nm线/空间的分辨率。

    Memory device and method of making the same
    5.
    发明授权
    Memory device and method of making the same 有权
    记忆体及其制作方法

    公开(公告)号：US07151029B2

    公开(公告)日：2006-12-19

    申请号：US11151007

    申请日：2005-06-14

    申请人： Luisa Dominica Bozano ,  Kenneth Raymond Carter ,  John Campbell Scott

    发明人： Luisa Dominica Bozano ,  Kenneth Raymond Carter ,  John Campbell Scott

    IPC分类号： H01L21/336 ,  G11C11/00

    CPC分类号： G11C13/00 ,  B82Y10/00 ,  B82Y30/00 ,  G11C13/0014 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/77 ,  H01L27/101 ,  H01L27/2472 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/1608

    摘要： A multi-stable memory or data storage element is used in crosspoint data-storage arrays, as a switch, a memory device, or as a logical device. The general structure of the multi-stable element comprises a layered, composite medium that both transports and stores charge disposed between two electrodes. Dispersed within the composite medium are discrete charge storage particles that trap and store charge. The multi-stable element achieves an exemplary bi-stable characteristic, providing a switchable device that has two or more stable states reliably created by the application of a voltage to the device. The voltages applied to achieve the “on” state, the “off” state, any intermediate state, and to read the state of the multi-stable element are all of the same polarity.

    摘要翻译： 在交叉点数据存储阵列中，作为交换机，存储设备或逻辑设备使用多稳定存储器或数据存储元件。 多稳定元件的一般结构包括分层的复合介质，其既输送并存储设置在两个电极之间的电荷。 分散在复合介质中的是分离和储存电荷的离散电荷存储颗粒。 多稳定元件实现了示例性的双稳态特征，提供了通过向器件施加电压可靠地产生两个或多个稳定状态的可切换装置。 用于实现“接通”状态，“断开”状态，任何中间状态以及读取多稳态元件的状态的电压都具有相同的极性。

    Non-volatile multi-stable memory device and methods of making and using the same
    6.
    发明授权
    Non-volatile multi-stable memory device and methods of making and using the same 有权
    非易失性多稳定存储器件及其制作与使用方法

    公开(公告)号：US06987689B2

    公开(公告)日：2006-01-17

    申请号：US10645240

    申请日：2003-08-20

    申请人： Luisa Dominica Bozano ,  Kenneth Raymond Carter ,  John Campbell Scott

    发明人： Luisa Dominica Bozano ,  Kenneth Raymond Carter ,  John Campbell Scott

    IPC分类号： G11C11/00

    CPC分类号： G11C13/00 ,  B82Y10/00 ,  B82Y30/00 ,  G11C13/0014 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/77 ,  H01L27/101 ,  H01L27/2472 ,  H01L45/10 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/1608

    摘要： A multi-stable memory or data storage element is used in crosspoint data-storage arrays, as a switch, a memory device, or as a logical device. The general structure of the multi-stable element comprises a layered, composite medium that both transports and stores charge disposed between two electrodes. Dispersed within the composite medium are discrete charge storage particles that trap and store charge. The multi-stable element achieves an exemplary bi-stable characteristic, providing a switchable device that has two or more stable states reliably created by the application of a voltage to the device. The voltages applied to achieve the “on” state, the “off” state, any intermediate state, and to read the state of the multi-stable element are all of the same polarity. The multi-stable element is stable, cyclable, and reproducible in both the “on” state and the “off” state. The storage medium has a relatively high resistance in both its on and off states. Consequently, a dense array can be fabricated without significant cross-talk between adjacent elements. No patterning of the layer of storage medium is required.

    摘要翻译： 在交叉点数据存储阵列中，作为交换机，存储设备或逻辑设备使用多稳定存储器或数据存储元件。 多稳定元件的一般结构包括分层的复合介质，其既输送并存储设置在两个电极之间的电荷。 分散在复合介质中的是分离和储存电荷的离散电荷存储颗粒。 多稳定元件实现了示例性的双稳态特征，提供了通过向器件施加电压可靠地产生两个或多个稳定状态的可切换装置。 用于实现“接通”状态，“断开”状态，任何中间状态以及读取多稳态元件的状态的电压都具有相同的极性。 多稳态元件在“开”状态和“关”状态都是稳定的，可循环的和可再现的。 存储介质在其打开和关闭状态下具有相对较高的电阻。 因此，可以在相邻元件之间没有明显的串扰的情况下制造密集阵列。 不需要存储介质层的图案化。