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17 条记录 (耗时 0.06 秒)

    Chemically amplified silsesquioxane resist compositions
    1.
    发明授权
    Chemically amplified silsesquioxane resist compositions 有权
    化学扩增倍半硅氧烷抗蚀剂组合物

    公开(公告)号：US08426113B2

    公开(公告)日：2013-04-23

    申请号：US12856338

    申请日：2010-08-13

    申请人： Luisa Dominica Bozano ,  Blake W. Davis ,  Alshakim Nelson ,  Jitendra Singh Rathore ,  Linda Karin Sundberg

    发明人： Luisa Dominica Bozano ,  Blake W. Davis ,  Alshakim Nelson ,  Jitendra Singh Rathore ,  Linda Karin Sundberg

    IPC分类号： G03F7/075 ,  G03F7/038 ,  G03F7/20 ,  G03F7/30 ,  G03F7/40

    CPC分类号： G03F7/0382 ,  G03F7/0757

    摘要： The present invention provides chemically amplified silsesquioxane polymers for preparing masks using e-beam lithography. The silsesquioxane polymers have reactive sidechains that in the presence of an acid undergo acid catalyzed rearrangement to generate reactive functionalities that crosslink to form Si—O—Si bonds. The reactive side-chains comprise β- and γ-substituted alkyl groups bound to the silicon of the silsesquioxane polymer. The substituent of the β- and γ-substituted alkyl group is an electron withdrawing group. Resists generated with the chemically amplified silsesquioxane polymers of the present invention and imaged with e-beams have resolution of ≦60 nm line/space.

    摘要翻译： 本发明提供用于使用电子束光刻制备掩模的化学放大倍半硅氧烷聚合物。 倍半硅氧烷聚合物具有在酸存在下经历酸催化重排以产生交联以形成Si-O-Si键的反应性官能团的反应性侧链。 反应性侧链包含与倍半硅氧烷聚合物的硅结合的β-取代的和取代的烷基。 β-和γ-取代的烷基的取代基是吸电子基团。 用本发明的化学放大倍半硅氧烷聚合物生成并用电子束成像的抗蚀剂具有@ 60nm线/空间的分辨率。

    CHEMICALLY AMPLIFIED SILSESQUIOXANE RESIST COMPOSITIONS
    2.
    发明申请
    CHEMICALLY AMPLIFIED SILSESQUIOXANE RESIST COMPOSITIONS 有权
    化学放大硅烷氧化物组合物

    公开(公告)号：US20120040289A1

    公开(公告)日：2012-02-16

    申请号：US12856338

    申请日：2010-08-13

    申请人： Luisa Dominica Bozano ,  Blake W. Davis ,  Alshakim Nelson ,  Jitendra Singh Rathore ,  Linda Karin Sundberg

    发明人： Luisa Dominica Bozano ,  Blake W. Davis ,  Alshakim Nelson ,  Jitendra Singh Rathore ,  Linda Karin Sundberg

    IPC分类号： G03F7/20 ,  G03F7/004

    CPC分类号： G03F7/0382 ,  G03F7/0757

    摘要： The present invention provides chemically amplified silsesquioxane polymers for preparing masks using e-beam lithography. The silsesquioxane polymers have reactive sidechains that in the presence of an acid undergo acid catalyzed rearrangement to generate reactive functionalities that crosslink to form Si—O—Si bonds. The reactive side-chains comprise β- and γ-substituted alkyl groups bound to the silicon of the silsesquioxane polymer. The substituent of the β- and γ-substituted alkyl group is an electron withdrawing group. Resists generated with the chemically amplified silsesquioxane polymers of the present invention and imaged with e-beams have resolution of ≦60 nm line/space.

    摘要翻译： 本发明提供用于使用电子束光刻制备掩模的化学放大倍半硅氧烷聚合物。 倍半硅氧烷聚合物具有在酸存在下经历酸催化重排以产生交联以形成Si-O-Si键的反应性官能团的反应性侧链。 反应性侧链包含与倍半硅氧烷聚合物的硅结合的β-和γ-取代的烷基。 取代基和取代基的取代基是吸电子基团。 用本发明的化学放大倍半硅氧烷聚合物产生的并用电子束成像的抗蚀剂具有60nm线/空间的分辨率。

    Photopatternable dielectric materials for BEOL applications and methods for use
    4.
    发明授权
    Photopatternable dielectric materials for BEOL applications and methods for use 有权
    用于BEOL应用的光图案介电材料和使用方法

    公开(公告)号：US08029971B2

    公开(公告)日：2011-10-04

    申请号：US12047435

    申请日：2008-03-13

    申请人： Robert D. Allen ,  Phillip Joe Brock ,  Blake W. Davis ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Ratnam Sooriyakumaran

    发明人： Robert D. Allen ,  Phillip Joe Brock ,  Blake W. Davis ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Ratnam Sooriyakumaran

    IPC分类号： G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  G03F7/40 ,  G03F7/38

    CPC分类号： G03F7/0757 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/40 ,  Y10S430/106 ,  Y10S430/115 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/126

    摘要： Compositions, a method, and a photopatternable blend. The compositions include a blend of a first and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a substituted silsesquioxane polymer. The second polymer is configured to undergo chemical crosslinking with the first polymer, the second polymer, or a combination thereof, upon exposure to light, thermal energy, or a combination thereof. The compositions include a photosensitive acid generator. The method includes forming a film. The film is patternwise imaged, and at least one region is exposed to radiation. After the imaging, the film is baked, wherein at least one exposed region is rendered substantially soluble. After the baking, the film is developed, wherein a relief pattern remains. The relief pattern is exposed to radiation. The relief pattern is baked. The relief pattern is cured. A chemically amplified positive-tone photopatternable blend is also described.

    摘要翻译： 组合，一种方法和一种光图案化混合物。 组合物包括第一和第二聚合物的共混物。 第一聚合物是取代的倍半硅氧烷共聚物。 第二聚合物是取代的倍半硅氧烷聚合物。 第二聚合物被配置为在暴露于光，热能或其组合时与第一聚合物，第二聚合物或其组合进行化学交联。 组合物包括光敏酸产生剂。 该方法包括形成膜。 膜被图案化成像，并且至少一个区域暴露于辐射。 在成像之后，烘烤该膜，其中至少一个曝光区域呈现基本上可溶的。 烘烤后，显影膜，其中保留有浮雕图案。 浮雕图案暴露于辐射。 浮雕图案被烘烤。 浮雕图案被修复。 还描述了化学放大的正色调可光图案化混合物。

    SPIN-ON ANTIREFLECTIVE COATING FOR INTEGRATION OF PATTERNABLE DIELECTRIC MATERIALS AND INTERCONNECT STRUCTURES
    10.
    发明申请
    SPIN-ON ANTIREFLECTIVE COATING FOR INTEGRATION OF PATTERNABLE DIELECTRIC MATERIALS AND INTERCONNECT STRUCTURES 有权
    用于整合电介质材料和互连结构的旋转抗反射涂层（SPIN-ON ANTIREFLECTIVE COATING FOR INTEGRATION OF PATTERNABLE DIELECTRIC MATERIALS AND INTERCONNECT STRUCTURES

    公开(公告)号：US20090081418A1

    公开(公告)日：2009-03-26

    申请号：US11858615

    申请日：2007-09-20

    申请人： Robert D. Allen ,  Phillip J. Brock ,  Blake W. Davis ,  Wu-Song S. Huang ,  Qinghuang Lin ,  Alshakim Nelson ,  Sampath Purushothaman ,  Ratnam Sooriyakumaran

    发明人： Robert D. Allen ,  Phillip J. Brock ,  Blake W. Davis ,  Wu-Song S. Huang ,  Qinghuang Lin ,  Alshakim Nelson ,  Sampath Purushothaman ,  Ratnam Sooriyakumaran

    IPC分类号： B32B5/00 ,  G03F7/00

    CPC分类号： H01L21/76808 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/0276 ,  H01L21/3122 ,  H01L21/76802 ,  H01L21/76835 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/24802 ,  H01L2924/00

    摘要： The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate. The inorganic ARC is liquid deposited and comprises a polymer that has at least one monomer unit comprising the formula M-R1 wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La and R1 is a chromophore. At least one interconnect pattern is formed within the at least one patternable low-k material and thereafter the at least one patternable low-k material is cured. The inventive method can be used to form dual-damascene interconnect structures as well as single-damascene interconnect structures.

    摘要翻译： 本发明提供一种制造互连结构的方法，其中可图案化的低k材料替代了使用单独的光致抗蚀剂和电介质材料的需要。 具体地说，本发明涉及一种制备具有至少一个可图案化的低k电介质和至少一种无机抗反射涂层的单镶嵌和双镶嵌低k互连结构的简化方法。 通常，提供了一种方法，其包括在位于基底顶部的无机抗反射涂层的表面上提供至少一种可图案化的低k材料。 无机ARC是液体沉积的，并且包含具有至少一个单体单元的聚合物，该单体单元包括式M-R1，其中M是Si，Ge，B，Sn，Fe，Ta，Ti，Ni，Hf和La中的至少一种， R1是发色团。 在至少一个可模制的低k材料内形成至少一个互连图案，此后至少一个可图案化的低k材料固化。 本发明的方法可用于形成双镶嵌互连结构以及单镶嵌互连结构。