公开(公告)号：US10560197B2

公开(公告)日：2020-02-11

申请号：US16268774

申请日：2019-02-06

Applicant: Luxtera, Inc.

Inventor： Gianlorenzo Masini ,  Subal Sahni

IPC: H04B10/60 ,  G01J1/44 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0368 ,  H01L31/11 ,  H03F3/08

Abstract: A method and system for optoelectronic receivers utilizing waveguide heterojunction phototransistors (HPTs) integrated in a wafer are disclosed and may include receiving optical signals via optical fibers operably coupled to a top surface of the chip. Electrical signals may be generated utilizing HPTs that detect the optical signals. The electrical signals may be amplified via voltage amplifiers, or transimpedance amplifiers, the outputs of which may be utilized to bias the HPTs by a feedback network. The optical signals may be coupled into opposite ends of the HPTs. A collector of the HPTs may comprise a silicon layer and a germanium layer, a base may comprise a silicon germanium alloy with germanium composition ranging from 70% to 100%, and an emitter including crystalline or poly Si or SiGe. The optical signals may be demodulated by communicating a mixer signal to a base terminal of the HPTs.

公开(公告)号：US10348459B2

公开(公告)日：2019-07-09

申请号：US15962829

申请日：2018-04-25

Applicant: Luxtera, Inc.

Inventor： Steffen Gloeckner ,  Subal Sahni ,  Joseph Balardeta ,  Simon Pang ,  Stefan Barabas ,  Scott Denton

IPC: H04B10/00 ,  H04L1/24 ,  H04B10/40 ,  H04B10/077 ,  H04B10/80

Abstract: Methods and systems for an optoelectronic built-in self-test (BIST) system for silicon photonics optical transceivers are disclosed and may include, in an optoelectronic transceiver having a transmit (Tx) path and a receive (Rx) path, where the Rx path includes a main Rx path and a BIST loopback path: generating a pseudo-random bit sequence (PRBS) signal, generating an optical signal in the Tx path by applying the PRBS signal to a modulator, communicating the optical signal to the BIST loopback path and converting to an electrical signal utilizing a photodetector, the photodetector being a replica of a photodetector in the main Rx path, and assessing the performance of the Tx and Rx paths by extracting a PRBS signal from the electrical signal. The transceiver may be a single complementary-metal oxide semiconductor (CMOS) die or in two CMOS die, where a first comprises electronic devices and a second comprises optical devices.

公开(公告)号：US20190162988A1

公开(公告)日：2019-05-30

申请号：US16267545

申请日：2019-02-05

Applicant: Luxtera, Inc.

Inventor： Ali Ayazi ,  Gianlorenzo Masini ,  Subal Sahni ,  Attila Mekis ,  Thierry Pinguet

IPC: G02F1/025 ,  G02F1/225

CPC classification number: G02F1/025 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2201/06 ,  G02F2202/105

Abstract: Methods and systems for a low-parasitic silicon high-speed phase modulator are disclosed and may include in an optical phase modulator that comprises a PN junction waveguide formed in a silicon layer, wherein the silicon layer may be on an oxide layer and the oxide layer may be on a silicon substrate. The PN junction waveguide may have fingers of p-doped and n-doped regions on opposite sides along a length of the PN junction waveguide. Contacts may be formed on the fingers of p-doped and n-doped regions. The fingers of p-doped and n-doped regions may be arranged symmetrically about the PN junction waveguide or staggered along the length of the PN junction waveguide. Etch transition features may be removed along the p-doped and n-doped regions.

公开(公告)号：US20190113822A1

公开(公告)日：2019-04-18

申请号：US16206749

申请日：2018-11-30

Applicant: Luxtera, Inc.

Inventor： Attila Mekis ,  Subal Sahni ,  Yannick De Koninck ,  Gianlorenzo Masini ,  Faezeh Gholami

IPC: G02F1/225 ,  G02F1/025

Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.

公开(公告)号：US10225004B2

公开(公告)日：2019-03-05

申请号：US15946527

申请日：2018-04-05

Applicant: Luxtera,, Inc.

Inventor： Subal Sahni

IPC: G02B6/30 ,  G02B6/34 ,  G02B6/42 ,  H04B10/07 ,  H04B10/40 ,  H04B10/80 ,  H04B10/073

Abstract: Methods and systems for a connectionless integrated optical receiver and transmitter test are disclosed and may include an optoelectronic transceiver comprising a transmit (Tx) path and a receive (Rx) path, with each path comprising optical switches. The transceiver may be operable to: generate a first modulated optical signal utilizing a modulator in the Tx path, couple the first modulated optical signal to a first optical switch in the Rx path via a second optical switch in the Tx path when the optoelectronic transceiver is configured in a self-test mode, receive a second modulated optical signal via a grating coupler in the Rx path when the optoelectronics transceiver is configured in an operational mode, and communicate the second modulated optical signal to a photodetector in the Rx path via the first optical switch. The first modulated optical signal may be communicated to a grating coupler in the Tx path via the second optical switch.

公开(公告)号：US20180227049A1

公开(公告)日：2018-08-09

申请号：US15946527

申请日：2018-04-05

Applicant: Luxtera,, Inc.

Inventor： Subal Sahni

IPC: H04B10/073 ,  H04B10/40

CPC classification number: H04B10/0731 ,  G02B6/30 ,  G02B6/34 ,  G02B6/4246 ,  H04B10/07 ,  H04B10/40 ,  H04B10/801

Abstract: Methods and systems for a connectionless integrated optical receiver and transmitter test are disclosed and may include an optoelectronic transceiver comprising a transmit (Tx) path and a receive (Rx) path, with each path comprising optical switches. The transceiver may be operable to: generate a first modulated optical signal utilizing a modulator in the Tx path, couple the first modulated optical signal to a first optical switch in the Rx path via a second optical switch in the Tx path when the optoelectronic transceiver is configured in a self-test mode, receive a second modulated optical signal via a grating coupler in the Rx path when the optoelectronics transceiver is configured in an operational mode, and communicate the second modulated optical signal to a photodetector in the Rx path via the first optical switch. The first modulated optical signal may be communicated to a grating coupler in the Tx path via the second optical switch.

公开(公告)号：US09941957B2

公开(公告)日：2018-04-10

申请号：US15401337

申请日：2017-01-09

Applicant: Luxtera, Inc.

Inventor： Subal Sahni

IPC: H04B10/073 ,  H04B10/40

CPC classification number: H04B10/0731 ,  G02B6/30 ,  G02B6/34 ,  G02B6/4246 ,  H04B10/07 ,  H04B10/40 ,  H04B10/801

Abstract: Methods and systems for a connectionless integrated optical receiver and transmitter test are disclosed and may include an optoelectronic transceiver comprising a transmit (Tx) path and a receive (Rx) path, with each path comprising optical switches. The transceiver may be operable to: generate a first modulated optical signal utilizing a modulator in the Tx path, couple the first modulated optical signal to a first optical switch in the Rx path via a second optical switch in the Tx path when the optoelectronic transceiver is configured in a self-test mode, receive a second modulated optical signal via a grating coupler in the Rx path when the optoelectronics transceiver is configured in an operational mode, and communicate the second modulated optical signal to a photodetector in the Rx path via the first optical switch. The first modulated optical signal may be communicated to a grating coupler in the Tx path via the second optical switch.

公开(公告)号：US20180059504A1

公开(公告)日：2018-03-01

申请号：US15694236

申请日：2017-09-01

Applicant: Luxtera, Inc.

Inventor： Attila Mekis ,  Subal Sahni ,  Yannick De Koninck ,  Gianlorenzo Masini ,  Faezeh Gholami

IPC: G02F1/225

CPC classification number: G02F1/2257 ,  G02F1/025 ,  G02F2001/212 ,  G02F2201/063 ,  G02F2201/12

Abstract: Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.

公开(公告)号：US20150381283A1

公开(公告)日：2015-12-31

申请号：US14752696

申请日：2015-06-26

Applicant: Luxtera, Inc.

Inventor： Subal Sahni ,  Kam-Yan Hon ,  Attila Mekis ,  Gianlorenzo Masini ,  Lieven Verslegers

IPC: H04B10/548 ,  H04B10/2581 ,  H04B10/50

CPC classification number: H04B10/548 ,  G02F1/025

Abstract: Methods and systems for a silicon-based optical phase modulator with high modal overlap are disclosed and may include, in an optical modulator having a rib waveguide in which a cross-shaped depletion region separates four alternately doped sections: receiving an optical signal at one end of the optical modulator, modulating the received optical signal by applying a modulating voltage, and communicating a modulated optical signal out of an opposite end of the modulator. The modulator may be in a silicon photonically-enabled integrated circuit which may be in a complementary-metal oxide semiconductor (CMOS) die. An optical mode may be centered on the cross-shaped depletion region. The four alternately doped sections may include: a shallow depth p-region, a shallow depth n-region, a deep p-region, and a deep n-region. The shallow depth p-region may be electrically coupled to the deep p-region periodically along the length of the modulator.

Abstract translation: 公开了具有高模态重叠的硅基光学相位调制器的方法和系统，并且可以包括在具有肋波导的光学调制器中，其中十字形耗尽区域分离四个交替掺杂的部分：在一端接收光信号 的光调制器，通过施加调制电压来调制所接收的光信号，并将调制的光信号从调制器的相对端传送出去。 调制器可以在可以在互补金属氧化物半导体（CMOS）裸片中的硅光子学上集成电路中。 光学模式可以在十字形耗尽区域的中心。 四个交替掺杂的部分可以包括：浅深度p区域，浅深度n区域，深p区域和深n区域。 浅深度p区域可以沿着调制器的长度周期性地电耦合到深p区域。

公开(公告)号：US20150316793A1

公开(公告)日：2015-11-05

申请号：US14105527

申请日：2013-12-13

Applicant: Luxtera Inc.

Inventor： Ali Ayazi ,  Gianlorenzo Masini ,  Subal Sahni ,  Attila Mekis ,  Thierry Pinguet

IPC: G02F1/025 ,  G02F1/225

CPC classification number: G02F1/025 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2201/06 ,  G02F2202/105

Abstract: Methods and systems for a low-parasitic silicon high-speed phase modulator are disclosed and may include fabricating an optical phase modulator that comprises a PN junction waveguide formed in a silicon layer, wherein the silicon layer may be on an oxide layer and the oxide layer may be on a silicon substrate. The PN junction waveguide may have p-doped and n-doped regions on opposite sides along a length of the PN junction waveguide, and portions of the p-doped and n-doped regions may be removed. Contacts may be formed on remaining portions of the p-doped and n-doped regions. Portions of the p-doped and n-doped regions may be removed symmetrically about the PN junction waveguide. Portions of the p-doped and n-doped regions may be removed in a staggered fashion along the length of the PN junction waveguide. Etch transition features may be removed along the p-doped and n-doped regions.

Abstract translation: 公开了一种用于低寄生硅高速相位调制器的方法和系统，并且可以包括制造包括形成在硅层中的PN结波导的光相位调制器，其中硅层可以在氧化物层上，氧化物层 可以在硅衬底上。 PN结波导可以在PN结波导的长度的相对侧上具有p掺杂区域和n掺杂区域，并且p掺杂区域和n掺杂区域的部分可以被去除。 可以在p掺杂区域和n掺杂区域的剩余部分上形成接触。 可以围绕PN结波导对称地去除部分p掺杂区域和n掺杂区域。 可以沿着PN结波导的长度以交错的方式去除部分p掺杂区域和n掺杂区域。 蚀刻跃迁特征可以沿着p掺杂区域和n掺杂区域去除。