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    Ultra low noise CMOS imager
    4.
    发明授权
    Ultra low noise CMOS imager 有权
    超低噪声CMOS成像仪

    公开(公告)号：US07929035B2

    公开(公告)日：2011-04-19

    申请号：US11683868

    申请日：2007-03-08

    申请人： Eugene Atlas ,  Sarit Neter ,  Kim Loren Johnson

    发明人： Eugene Atlas ,  Sarit Neter ,  Kim Loren Johnson

    IPC分类号： H04N3/14 ,  H04N5/335 ,  H01L27/00

    CPC分类号： H04N5/365 ,  H04N5/3575 ,  H04N5/363 ,  H04N5/378

    摘要： A column buffer for use with a pixel cell array includes an amplifier coupled to three read-out circuits in parallel providing a signal corresponding to accumulated photon-generated charge in a pixel cell plus noise, a reset level plus noise, and a pedestal level, respectively. These three signals are used to generate an ultra-low noise signal Di=Si−Pi-1−G*(Ri−Ri-1), wherein S is the sampled signal, P is the pedestal level, R is the reset level, and G is a gain associated with a pixel cell, and wherein i is a frame number greater than 0. The three signals can be read-out simultaneously. In another embodiment, the three signals are obtained from a column buffer having only one output. In this case, the signals are read-out sequentially.

    摘要翻译： 与像素单元阵列一起使用的列缓冲器包括并联的三个读出电路的放大器，提供对应于像素单元中的积累的光子产生的电荷加噪声，复位电平加噪声和基准电平的信号， 分别。 这三个信号用于产生超低噪声信号Di = Si-Pi-1-G *（Ri-Ri-1），其中S是采样信号，P是基准电平，R是复位电平， 并且G是与像素单元相关联的增益，并且其中i是大于0的帧数。可以同时读出三个信号。 在另一个实施例中，三个信号从仅具有一个输出的列缓冲器获得。 在这种情况下，依次读出信号。

    Ultra low noise CMOS imager
    5.
    发明授权
    Ultra low noise CMOS imager 有权
    超低噪声CMOS成像仪

    公开(公告)号：US08334917B2

    公开(公告)日：2012-12-18

    申请号：US13051428

    申请日：2011-03-18

    申请人： Eugene Atlas ,  Sarit Neter ,  Kim Loren Johnson

    发明人： Eugene Atlas ,  Sarit Neter ,  Kim Loren Johnson

    IPC分类号： H04N3/14 ,  H04N5/335 ,  H01L27/00

    CPC分类号： H04N5/365 ,  H04N5/3575 ,  H04N5/363 ,  H04N5/378

    摘要： A column buffer for use with a pixel cell array includes an amplifier coupled to three read-out circuits in parallel providing a signal corresponding to accumulated photon-generated charge in a pixel cell plus noise, a reset level plus noise, and a pedestal level, respectively. These three signals are used to generate an ultra-low noise signal Di=Si−Pi-1−G*(Ri−Ri-1), wherein S is the sampled signal, P is the pedestal level, R is the reset level, and G is a gain associated with a pixel cell, and wherein i is a frame number greater than 0. The three signals can be read-out simultaneously. In another embodiment, the three signals are obtained from a column buffer having only one output. In this case, the signals are read-out sequentially.

    摘要翻译： 与像素单元阵列一起使用的列缓冲器包括并联的三个读出电路的放大器，提供对应于像素单元中的积累的光子产生的电荷加噪声，复位电平加噪声和基准电平的信号， 分别。 这三个信号用于产生超低噪声信号Di = Si-Pi-1-G *（Ri-Ri-1），其中S是采样信号，P是基准电平，R是复位电平， 并且G是与像素单元相关联的增益，并且其中i是大于0的帧数。可以同时读出三个信号。 在另一个实施例中，三个信号从仅具有一个输出的列缓冲器获得。 在这种情况下，依次读出信号。

    Active pixel sensor cell array
    6.
    发明授权
    Active pixel sensor cell array 有权
    有源像素传感器单元阵列

    公开(公告)号：US07199828B2

    公开(公告)日：2007-04-03

    申请号：US10304799

    申请日：2002-11-25

    申请人： Eugene Atlas

    发明人： Eugene Atlas

    IPC分类号： H04N3/14 ,  H04N5/335 ,  H01L27/00

    CPC分类号： H04N5/3653

    摘要： An active pixel sensor cell array in which a partial transimpedance amplifier amplifies the output of each cell. The pixel sensor cell array comprises a plurality of pixel sensor cells and a second part of the amplifier. Each pixel sensor cell comprises a photo-sensitive element, a capacitor and a first part of an amplifier. The capacitor is coupled between a terminal of the photo-sensitive element and an output line of the cell. The capacitor is operable to provide a capacitive feedback in the pixel sensor cell. The second part of the amplifier is coupled to the output lines of a plurality of pixel sensor cells. The amplifier is configured to amplify an output signal from a cell.

    摘要翻译： 有源像素传感器单元阵列，其中部分跨阻放大器放大每个单元的输出。 像素传感器单元阵列包括多个像素传感器单元和该放大器的第二部分。 每个像素传感器单元包括光敏元件，电容器和放大器的第一部分。 电容器耦合在感光元件的端子和单元的输出线之间。 电容器可操作以在像素传感器单元中提供电容反馈。 放大器的第二部分耦合到多个像素传感器单元的输出线。 放大器被配置为放大来自单元的输出信号。

    CMOS imager with wide dynamic range Pixel
    7.
    发明申请
    CMOS imager with wide dynamic range Pixel 有权
    CMOS成像器具有宽动态范围像素

    公开(公告)号：US20070023786A1

    公开(公告)日：2007-02-01

    申请号：US11311211

    申请日：2005-12-19

    申请人： Kim Johnson ,  Eugene Atlas ,  Sarit Neter

    发明人： Kim Johnson ,  Eugene Atlas ,  Sarit Neter

    IPC分类号： H01L29/768

    CPC分类号： H01L27/14609 ,  H04N5/3559 ,  H04N5/3597 ,  H04N5/37452

    摘要： In one aspect of the present invention, a light sensor is provided in the active pixel sensor cell for sensing incident radiation. The voltage corresponding to the photon-generated or other radiation-generated charge in the active pixel sensor cell is stored on a storage node via a sample-and-hold capacitor. Additional elements, such as source-follower transistors, may reside between the sensing element and the sample-and-hold capacitor. The signal is read via a readout source-follower (RSF) transistor. The readout source-follower drain is connected to the row select switch while its drain is connected to the output node on the column output bus. This configuration couples the storage node to the gate-source capacitance of the readout source-follower transistor. This allows the voltage on the storage node to increase proportionally to the increase in voltage on the readout node when the row select is closed and thus enables the drain current to flow through the RSF to the column output bus.

    摘要翻译： 在本发明的一个方面，光传感器设置在有源像素传感器单元中，用于感测入射辐射。 对应于有源像素传感器单元中的光子产生或其他辐射产生电荷的电压通过采样和保持电容器存储在存储节点上。 诸如源极 - 跟随器晶体管的附加元件可以位于感测元件和采样保持电容器之间。 信号通过读取源极跟随器（RSF）晶体管读取。 读取源极跟随器漏极连接到行选择开关，而其漏极连接到列输出总线上的输出节点。 该配置将存储节点耦合到读出源跟随器晶体管的栅极 - 源极电容。 这允许存储节点上的电压与行选择关闭时读出节点上的电压增加成比例地增加，并且因此使漏极电流能够通过RSF流到列输出总线。

    Adjustable CMOS sensor array
    9.
    发明授权
    Adjustable CMOS sensor array 有权
    可调CMOS传感器阵列

    公开(公告)号：US08405017B2

    公开(公告)日：2013-03-26

    申请号：US12969387

    申请日：2010-12-15

    申请人： Sarit Neter ,  Eugene Atlas

    发明人： Sarit Neter ,  Eugene Atlas

    IPC分类号： H01L27/146

    CPC分类号： H04N5/3559 ,  H04N5/3696 ,  H04N5/37452

    摘要： In one aspect, the present invention provides an active pixel sensor array with optimized matching between pixels and strength and frequency of incoming signals such as photons absorbed. The array comprises multiple pixels of individual geometry corresponds to spatial location. Each pixel full-well is adjustable via modifiable pixel conversion gain while maintaining pixel linearity. Furthermore each pixel internally stores multiple of extremely high frequency samples. Variable pixel geometry per row is very advantageous for Echelle spectrograph, where pixel heights are aligned with the spectrograph “order separator” where the resolution changes. In combination with variable geometry, externally adjustable full-well provides for superior spectral line separation in spectroscopy applications. In one embodiment multiple time windows with intermittent resets are stored within each pixel. This feature allows for the detection of extreme high frequency consecutive events without saturation such as may be the case with LIBS (Laser Induced Breakdown Spectroscopy).

    摘要翻译： 在一个方面，本发明提供一种有源像素传感器阵列，其具有像素之间的优化匹配，以及诸如所吸收的光子之类的输入信号的强度和频率。 该阵列包括对应于空间位置的单个几何的多个像素。 每个像素全阱可通过可修改的像素转换增益进行调整，同时保持像素线性度。 此外，每个像素内部存储极高频率样本的多个。 对于Echelle光谱仪，每行的可变像素几何非常有利，其中像素高度与分辨率改变的光谱仪顺序分隔符对齐。 结合可变几何形状，外部可调全孔可在光谱应用中提供卓越的光谱线分离。 在一个实施例中，具有间歇复位的多个时间窗口被存储在每个像素内。 该特征允许检测没有饱和的极端高频连续事件，例如可能是LIBS（激光诱导击穿光谱）的情况。

    CMOS imager with wide dynamic range pixel
    10.
    发明授权
    CMOS imager with wide dynamic range pixel 有权
    具有宽动态范围像素的CMOS成像仪

    公开(公告)号：US07411168B2

    公开(公告)日：2008-08-12

    申请号：US11311211

    申请日：2005-12-19

    申请人： Kim Loren Johnson ,  Eugene Atlas ,  Sarit Neter

    发明人： Kim Loren Johnson ,  Eugene Atlas ,  Sarit Neter

    IPC分类号： H01L27/00

    CPC分类号： H01L27/14609 ,  H04N5/3559 ,  H04N5/3597 ,  H04N5/37452

    摘要： In one aspect of the present invention, a light sensor is provided in the active pixel sensor cell for sensing incident radiation. The voltage corresponding to the photon-generated or other radiation-generated charge in the active pixel sensor cell is stored on a storage node via a sample-and-hold capacitor. Additional elements, such as source-follower transistors, may reside between the sensing element and the sample-and-hold capacitor. The signal is read via a readout source-follower (RSF) transistor. The readout source-follower drain is connected to the row select switch while its drain is connected to the output node on the column output bus. This configuration couples the storage node to the gate-source capacitance of the readout source-follower transistor. This allows the voltage on the storage node to increase proportionally to the increase in voltage on the readout node when the row select is closed and thus enables the drain current to flow through the RSF to the column output bus.

    摘要翻译： 在本发明的一个方面，光传感器设置在有源像素传感器单元中，用于感测入射辐射。 对应于有源像素传感器单元中的光子产生或其他辐射产生电荷的电压通过采样和保持电容器存储在存储节点上。 诸如源极 - 跟随器晶体管的附加元件可以位于感测元件和采样保持电容器之间。 信号通过读取源极跟随器（RSF）晶体管读取。 读取源极跟随器漏极连接到行选择开关，而其漏极连接到列输出总线上的输出节点。 该配置将存储节点耦合到读出源跟随器晶体管的栅极 - 源极电容。 这允许存储节点上的电压与行选择关闭时读出节点上的电压增加成比例地增加，并且因此使漏极电流能够通过RSF流到列输出总线。