Alternating anti-parallel diode mixer structure
    1.
    发明授权
    Alternating anti-parallel diode mixer structure 有权
    交替反并联二极管混频器结构

    公开(公告)号:US09571035B1

    公开(公告)日:2017-02-14

    申请号:US15044407

    申请日:2016-02-16

    CPC classification number: H03D7/02 H03D2200/0013

    Abstract: An apparatus includes a first circuit and a second circuit. The first circuit may be fabricated in a substrate and generally includes a first diode and a second diode (i) connected as anti-parallel diodes and (ii) physically adjacent to each other in the substrate. The second circuit may be fabricated in the substrate and generally includes a third diode and a fourth diode (i) connected as anti-parallel diodes and (ii) physically adjacent to each other in the substrate. The first circuit and the second circuit may be (a) connected in parallel, (b) physically adjacent to each other in the substrate and (c) configured to mix two input signals to generate an output signal.

    Abstract translation: 一种装置包括第一电路和第二电路。 第一电路可以制造在衬底中,并且通常包括作为反并联二极管连接的第一二极管和第二二极管(i)和(ii)在衬底中彼此物理相邻的第二二极管。 第二电路可以制造在衬底中,并且通常包括作为反并联二极管连接的第三二极管和第四二极管(i),和(ii)在衬底中彼此物理相邻。 第一电路和第二电路可以是(a)并联连接,(b)在衬底中彼此物理相邻;以及(c)配置为混合两个输入信号以产生输出信号。

    Electro-static discharge protection in integrated circuit based amplifiers
    3.
    发明授权
    Electro-static discharge protection in integrated circuit based amplifiers 有权
    集成电路放大器中的静电放电保护

    公开(公告)号:US09589949B1

    公开(公告)日:2017-03-07

    申请号:US14515797

    申请日:2014-10-16

    Abstract: An apparatus having a plurality of power pads of an integrated circuit, a plurality of transistors, and one or more diodes is disclosed. Each transistors may have a drain that forms a junction with a conductive layer of the integrated circuit. The diodes may be coupled between two of the power pads. A first portion less than all of an electro-static discharge that passes through a first of the two power pads and the conductive layer may be transferred through a first of the drains in a first of the transistors. A second portion less than all of the electro-static discharge may be transferred sequentially through (a) at least one of the diodes and (b) a second of the drains in a second of the transistors.

    Abstract translation: 公开了具有集成电路,多个晶体管和一个或多个二极管的多个功率垫的装置。 每个晶体管可以具有与集成电路的导电层形成结的漏极。 二极管可以耦合在两个电源焊盘之间。 小于通过两个电源焊盘和导电层中的第一个的所有静电放电的第一部分可以通过第一晶体管中的第一漏极传输。 小于所有静电放电的第二部分可以顺序地通过(a)二极管中的至少一个和(b)第二个晶体管中的第二个漏极转移。

    DOUBLE DOWN-CONVERSION WITH MULTIPLE INDEPENDENT INTERMEDIATE FREQUENCIES FOR E-BAND APPLICATIONS
    6.
    发明申请
    DOUBLE DOWN-CONVERSION WITH MULTIPLE INDEPENDENT INTERMEDIATE FREQUENCIES FOR E-BAND APPLICATIONS 审中-公开
    用于电子应用的多个独立中间频率的双向下变频

    公开(公告)号:US20160308565A1

    公开(公告)日:2016-10-20

    申请号:US15194981

    申请日:2016-06-28

    Abstract: An apparatus includes a first receiver frequency conversion stage and a second receiver frequency conversion stage. The first receiver frequency conversion stage may be configured to generate at least four first intermediate frequency signals in response to a radio frequency (RF) input signal and respective phases of a first local oscillator signal. The second receiver frequency conversion stage may be configured to generate at least four output signals in response to the at least four first intermediate frequency signals and one or more phases of a second local oscillator signal. Each of the at least four output signals is generated in an independent channel in response to a respective one of the at least four first intermediate frequency signals and a respective one of the one or more phases of the second local oscillator signal.

    Abstract translation: 一种装置包括第一接收机频率转换级和第二接收机频率转换级。 第一接收机频率转换级可以被配置为响应于射频(RF)输入信号和第一本地振荡器信号的各个相位而产生至少四个第一中频信号。 第二接收机频率转换级可以被配置为响应于至少四个第一中频信号和第二本地振荡器信号的一个或多个相位而产生至少四个输出信号。 所述至少四个输出信号中的每一个响应于所述至少四个第一中频信号中的相应一个和所述第二本地振荡器信号的所述一个或多个相位中的相应一个而在独立信道中生成。

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