公开(公告)号：US09006003B1

公开(公告)日：2015-04-14

申请号：US14220993

申请日：2014-03-20

Applicant: MACRONIX International Co., Ltd.

Inventor： Tuung Luoh ,  Chi-Min Chen ,  Ling-Wuu Yang ,  Ta-Hone Yang ,  Kuang-Chao Chen

IPC: H01L21/00 ,  G11C99/00 ,  H01L21/66 ,  G01R31/28

CPC classification number: H01L22/14 ,  G01R31/2851 ,  G06T7/0004 ,  G06T2207/10061 ,  G06T2207/30148 ,  G11C29/006 ,  G11C29/56008 ,  G11C2029/5604

Abstract: A method of detecting bitmap failure associated with physical coordinates is provided. In the method, data of wafer mapping inspection are obtained first, and the data include images of defects in each of layers within a wafer and a plurality of physical coordinates of the defects. Thereafter, a bitmap failure detection is performed to obtain digital coordinates of failure bits within the wafer. The digital coordinates are converted into a plurality of physical locations, and the physical locations are overlapped with the physical coordinates so as to rapidly obtain correlations between the failure bits and the defects.

Abstract translation: 提供了一种检测与物理坐标相关联的位图故障的方法。 在该方法中，首先获得晶片映射检查的数据，并且数据包括晶片内的每个层中的缺陷图像和缺陷的多个物理坐标。 此后，执行位图故障检测以获得晶片内的故障位的数字坐标。 数字坐标被转换成多个物理位置，并且物理位置与物理坐标重叠，以便快速获得故障位与缺陷之间的相关性。

公开(公告)号：US10892265B2

公开(公告)日：2021-01-12

申请号：US16287910

申请日：2019-02-27

Applicant: MACRONIX International Co., Ltd.

Inventor： Chi-Min Chen ,  Yung-Tai Hung ,  Tuung Luoh ,  Ta-Hung Yang ,  Kuang-Chao Chen

IPC: H01L21/768 ,  H01L23/532 ,  H01L27/11521 ,  G11C8/14

Abstract: Provided is a word line structure including a substrate, a stack structure, and a metal silicide structure. The stack structure is disposed on the substrate. The metal silicide structure is disposed on the stack structure. The metal silicide structure includes a first metal element, a second metal element, and a silicon element. The first metal element is different from the second metal element, and concentrations of the first metal element and the second metal element gradually decrease along a direction from a top surface of the metal silicide structure to the substrate.

公开(公告)号：US20200273868A1

公开(公告)日：2020-08-27

申请号：US16287910

申请日：2019-02-27

Applicant: MACRONIX International Co., Ltd.

Inventor： Chi-Min Chen ,  Yung-Tai Hung ,  Tuung Luoh ,  Ta-Hung Yang ,  Kuang-Chao Chen

IPC: H01L27/11521 ,  G11C8/14

Abstract: Provided is a word line structure including a substrate, a stack structure, and a metal silicide structure. The stack structure is disposed on the substrate. The metal silicide structure is disposed on the stack structure. The metal silicide structure includes a first metal element, a second metal element, and a silicon element. The first metal element is different from the second metal element, and concentrations of the first metal element and the second metal element gradually decrease along a direction from a top surface of the metal silicide structure to the substrate.