公开(公告)号：US20160155513A1

公开(公告)日：2016-06-02

申请号：US15019397

申请日：2016-02-09

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jeffery A. Kessenich ,  Joemar Sinipete ,  Chiming Chu ,  Jason L. Nevill ,  Kenneth W. Marr ,  Renato C. Padilla

IPC: G11C16/34 ,  G11C16/26 ,  G11C16/10

CPC classification number: G11C16/3459 ,  G01R31/02 ,  G11C7/00 ,  G11C7/02 ,  G11C8/08 ,  G11C16/00 ,  G11C16/10 ,  G11C16/26 ,  G11C16/349 ,  G11C29/02 ,  G11C29/025 ,  G11C29/04 ,  G11C29/50008 ,  G11C2029/1202 ,  G11C2029/1204 ,  G11C2029/5006

Abstract: Methods of operating a memory device having embedded leak checks may mitigate data loss events due to access line defects, and may facilitate improved power consumption characteristics. Such methods might include applying a program pulse to a selected access line coupled to a memory cell selected for programming, verifying whether the selected memory cell has reached a desired data state, bringing the selected access line to a first voltage, applying a second voltage to an unselected access line, applying a reference current to the selected access line, and determining if a current flow between the selected access line and the unselected access line is greater than the reference current.

公开(公告)号：US09761322B2

公开(公告)日：2017-09-12

申请号：US15019397

申请日：2016-02-09

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Jeffery A. Kessenich ,  Joemar Sinipete ,  Chiming Chu ,  Jason L. Nevill ,  Kenneth W. Marr ,  Renato C. Padilla

IPC: G11C16/00 ,  G11C16/34 ,  G11C16/10 ,  G11C16/26 ,  G11C29/04 ,  G01R31/02 ,  G11C29/02 ,  G11C8/08 ,  G11C7/00 ,  G11C29/50 ,  G11C7/02 ,  G11C29/12

CPC classification number: G11C16/3459 ,  G01R31/02 ,  G11C7/00 ,  G11C7/02 ,  G11C8/08 ,  G11C16/00 ,  G11C16/10 ,  G11C16/26 ,  G11C16/349 ,  G11C29/02 ,  G11C29/025 ,  G11C29/04 ,  G11C29/50008 ,  G11C2029/1202 ,  G11C2029/1204 ,  G11C2029/5006

Abstract: Methods of operating a memory device having embedded leak checks may mitigate data loss events due to access line defects, and may facilitate improved power consumption characteristics. Such methods might include applying a program pulse to a selected access line coupled to a memory cell selected for programming, verifying whether the selected memory cell has reached a desired data state, bringing the selected access line to a first voltage, applying a second voltage to an unselected access line, applying a reference current to the selected access line, and determining if a current flow between the selected access line and the unselected access line is greater than the reference current.