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    PROGRAM OPERATIONS WITH EMBEDDED LEAK CHECKS
    4.
    发明申请
    PROGRAM OPERATIONS WITH EMBEDDED LEAK CHECKS 有权
    具有嵌入式泄漏检查的程序操作

    公开(公告)号：US20150364213A1

    公开(公告)日：2015-12-17

    申请号：US14302782

    申请日：2014-06-12

    申请人： Micron Technology, Inc.

    发明人： Jeffrey A. Kessenich ,  Joemar Sinipete ,  Chiming Chu ,  Jason L. Nevill ,  Kenneth W. Marr ,  Renato C. Padilla

    IPC分类号： G11C29/04 ,  G11C16/10 ,  G01R31/02

    CPC分类号： G11C16/3459 ,  G01R31/02 ,  G11C7/00 ,  G11C7/02 ,  G11C8/08 ,  G11C16/00 ,  G11C16/10 ,  G11C16/26 ,  G11C16/349 ,  G11C29/02 ,  G11C29/025 ,  G11C29/04 ,  G11C29/50008 ,  G11C2029/1202 ,  G11C2029/1204 ,  G11C2029/5006

    摘要： Methods of operating a memory device having embedded leak checks may mitigate data loss events due to access line defects, and may facilitate improved power consumption characteristics. Such methods might include applying a program pulse to a selected access line coupled to a memory cell selected for programming, verifying whether the selected memory cell has reached a desired data state, bringing the selected access line to a first voltage, applying a second voltage to an unselected access line, applying a reference current to the selected access line, and determining if a current flow between the selected access line and the unselected access line is greater than the reference current.

    摘要翻译： 操作具有嵌入式泄漏检查的存储器件的方法可以减轻由于存取线缺陷引起的数据丢失事件，并且可以促进改进的功耗特性。 这样的方法可以包括将程序脉冲施加到被选择用于编程的存储器单元的选定访问线，验证所选择的存储单元是否已经达到期望的数据状态，将所选择的访问线路施加到第一电压，将第二电压施加到 未选择的接入线路，将参考电流施加到所选择的接入线路，以及确定所选择的接入线路与未选择接入线路之间的当前流量是否大于参考电流。

    REFRESH OPERATION OF A MEMORY CELL
    7.
    发明申请
    REFRESH OPERATION OF A MEMORY CELL 有权

    公开(公告)号：US20210358546A1

    公开(公告)日：2021-11-18

    申请号：US15931131

    申请日：2020-05-13

    申请人： Micron Technology, Inc.

    发明人： Joemar Sinipete ,  John Christopher Sancon ,  Mingdong Cui

    IPC分类号： G11C13/00

    摘要： Methods, systems, and devices for a refresh operation of a memory cell are described. A memory device may include a plurality of rows of memory cells. Each row of memory cells may undergo a quantity of access operations (e.g., read operations, write operations). During a read operation, a logic state of one or more memory cells may be determined by applying a read pulse having a first polarity. Based on the one or more memory cells storing a particular logic state (e.g., a first logic state), a refresh operation may be performed. During a refresh operation, a refresh pulse having a second polarity (e.g., a different polarity than the first polarity) may be applied to the one or more memory cells.

    REFRESH OPERATION OF A MEMORY CELL
    10.
    发明申请
    REFRESH OPERATION OF A MEMORY CELL 有权

    公开(公告)号：US20220415395A1

    公开(公告)日：2022-12-29

    申请号：US17865248

    申请日：2022-07-14

    申请人： Micron Technology, Inc.

    发明人： Joemar Sinipete ,  John Christopher Sancon ,  Mingdong Cui

    IPC分类号： G11C13/00

    摘要： Methods, systems, and devices for a refresh operation of a memory cell are described. A memory device may include a plurality of rows of memory cells. Each row of memory cells may undergo a quantity of access operations (e.g., read operations, write operations). During a read operation, a logic state of one or more memory cells may be determined by applying a read pulse having a first polarity. Based on the one or more memory cells storing a particular logic state (e.g., a first logic state), a refresh operation may be performed. During a refresh operation, a refresh pulse having a second polarity (e.g., a different polarity than the first polarity) may be applied to the one or more memory cells.