公开(公告)号：US09153451B2

公开(公告)日：2015-10-06

申请号：US13712635

申请日：2012-12-12

Applicant: Micron Technology, Inc.

Inventor： Andrew Dennis Watson Carswell ,  Wayne Hai-Wei Huang ,  Siddartha Kondoju ,  Jin Lu ,  Suresh Ramakrishnan ,  Kozaburo Sakai ,  Sony Varghese ,  Andrey V. Zagrebelny

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321

CPC classification number: H01L21/30625 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/32125

Abstract: A method of forming a planar surface for a semiconductor device structure. The method comprises forming a particle film comprising a plurality of discrete particles on a non-planar surface of a semiconductor device structure. The semiconductor device structure is subjected to at least one chemical-mechanical polishing process after forming the particle film on the non-planar surface of the semiconductor device structure. Methods of forming a semiconductor device structure are also described.

Abstract translation: 一种形成半导体器件结构的平面的方法。 该方法包括在半导体器件结构的非平面表面上形成包含多个离散粒子的粒子膜。 半导体器件结构在半导体器件结构的非平面表面上形成颗粒膜之后经历至少一个化学机械抛光工艺。 还描述了形成半导体器件结构的方法。

公开(公告)号：US20140162455A1

公开(公告)日：2014-06-12

申请号：US13712635

申请日：2012-12-12

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Andrew Dennis Watson Carswell ,  Wayne Hai-Wei Huang ,  Siddartha Kondoju ,  Jin Lu ,  Suresh Ramakrishnan ,  Kozaburo Sakai ,  Sony Varghese ,  Andrey V. Zagrebelny

IPC: H01L21/306

CPC classification number: H01L21/30625 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/32125

Abstract: A method of forming a planar surface for a semiconductor device structure. The method comprises forming a particle film comprising a plurality of discrete particles on a non-planar surface of a semiconductor device structure. The semiconductor device structure is subjected to at least one chemical-mechanical polishing process after forming the particle film on the non-planar surface of the semiconductor device structure. Methods of forming a semiconductor device structure are also described.

Abstract translation: 一种形成半导体器件结构的平面的方法。 该方法包括在半导体器件结构的非平面表面上形成包含多个离散粒子的粒子膜。 半导体器件结构在半导体器件结构的非平面表面上形成颗粒膜之后经历至少一个化学机械抛光工艺。 还描述了形成半导体器件结构的方法。