-
公开(公告)号：US12127342B2
公开(公告)日：2024-10-22
申请号：US17913877
申请日：2021-03-30
发明人： Fumiaki Ishikawa , Shintaro Hara , Hiroyuki Mori , Kosei Fukuoka
CPC分类号： H05K1/056 , H05K1/181 , H05K2201/0209
摘要： A metal base substrate of the present invention is a metal base substrate including a metal substrate, an insulating layer laminated on one surface of the metal substrate, and a circuit layer laminated on a surface of the insulating layer opposite to the metal substrate side, in which the circuit layer is made of a metal having a semi-softening temperature of 100° C. or higher and 150° C. or lower, the insulating layer contains a resin, and a relationship between a thickness t (μm) of the insulating layer and an elastic modulus E (GPa) of the insulating layer at 100° C. satisfies a following formula (1).
10-
2.发明授权公开(公告)号：US11795525B2
公开(公告)日：2023-10-24
申请号：US17438954
申请日：2020-03-25
发明人： Naoki Miyashima , Takanori Kobayashi , Kazunari Maki , Shinichi Funaki , Hiroyuki Mori , Yuki Ito
CPC分类号： C22C9/00 , B32B15/018 , B32B15/20 , C25D5/34 , C25D5/50 , Y10T428/12903
摘要： To improve adhesion between a plating film reducing contact electrical resistance and a copper alloy plate containing Mg. A copper alloy plate containing Mg of more than 1.2% by mass and 2% by mass or less and the balance Cu and inevitable impurities in a center portion in a plate thickness direction, in the copper alloy plate, a surface Mg concentration at a surface is 30% or less of a center Mg concentration at the center portion in the plate thickness direction, a surface layer portion having a depth from the surface to where a Mg concentration is 90% of the center Mg concentration is provided, and in the surface layer portion, the Mg concentration increases from the surface toward the center portion of the plate thickness direction with a concentration gradient of 0.2% by mass/μm or more and 50% by mass/μm or less.
-
公开(公告)号：US11732329B2
公开(公告)日：2023-08-22
申请号：US17779850
申请日：2020-11-27
CPC分类号： C22C9/00 , C22C1/0425 , C22C2200/00 , H01B1/026
摘要： A copper alloy has a composition including: 70 mass ppm or more and 400 mass ppm or less of Mg; 5 mass ppm or more and 20 mass ppm or less of Ag; less than 3.0 mass ppm of P; and a Cu balance containing inevitable impurities. In the copper alloy, the electrical conductivity is 90% IACS or more, and the average value of KAM values is 3.0 or less.
-
公开(公告)号：US20230111128A1
公开(公告)日：2023-04-13
申请号：US17913877
申请日：2021-03-30
发明人： Fumiaki Ishikawa , Shintaro Hara , Hiroyuki Mori , Kosei Fukuoka
摘要： A metal base substrate of the present invention is a metal base substrate including a metal substrate, an insulating layer laminated on one surface of the metal substrate, and a circuit layer laminated on a surface of the insulating layer opposite to the metal substrate side, in which the circuit layer is made of a metal having a semi-softening temperature of 100° C. or higher and 150° C. or lower, the insulating layer contains a resin, and a relationship between a thickness t (μm) of the insulating layer and an elastic modulus E (GPa) of the insulating layer at 100° C. satisfies a following formula (1). 10
-
公开(公告)号：US12035469B2
公开(公告)日：2024-07-09
申请号：US17909678
申请日：2021-03-05
发明人： Hirotaka Matsunaga , Yuki Ito , Hiroyuki Mori
摘要： A pure copper sheet has a composition including 99.96 mass % or more of Cu, 9.0 mass ppm or more and less than 100.0 mass ppm of a total content of Ag, Sn, and Fe, and inevitable impurities as a balance, in which an average crystal grain size of crystal grains on a rolled surface is 10 μm or more, the pure copper sheet has crystals in which crystal planes parallel to the rolled surface are a {022} plane, a {002} plane, a {113} plane, a {111} plane, and a {133} plane, and diffraction peak intensities of the individual crystal planes that are obtained by X-ray diffraction measurement by a 2θ/θ method on the rolled surface satisfy I {022}/(I {022}+I {002}+I {113}+I {111}+I {133})≤0.15, I {002}/I {111}≥10.0, and I {002}/I {113}≥15.0.
-
公开(公告)号：US11104977B2
公开(公告)日：2021-08-31
申请号：US16976351
申请日：2019-03-28
摘要： A copper alloy includes, by mass %: Mg: 0.15%-0.35%; and P: 0.0005%-0.01%, with a remainder being Cu and unavoidable impurities, wherein [Mg]+20×[P]
-
7.发明申请COPPER ALLOY FOR ELECTRONIC/ELECTRICAL EQUIPMENT, COPPER ALLOY THIN SHEET FOR ELECTRONIC/ELECTRICAL EQUIPMENT, CONDUCTIVE COMPONENT FOR ELECTRONIC/ELECTRICAL EQUIPMENT, AND TERMINAL 审中-公开电子/电气设备铜合金，电子/电气设备铜合金薄膜，电子/电气设备的导电组件和端子公开(公告)号：US20160138135A1
公开(公告)日：2016-05-19
申请号：US14898717
申请日：2014-02-20
发明人： Kazunari Maki , Hiroyuki Mori , Daiki Yamashita
摘要： One aspect of this copper alloy for an electronic and electrical equipment contains: more than 2.0 mass % to 36.5 mass % of Zn; 0.10 mass % to 0.90 mass % of Sn; 0.15 mass % to less than 1.00 mass % of Ni; and 0.005 mass % to 0.100 mass % of P, with the balance containing Cu and inevitable impurities, wherein atomic ratios of amounts of elements satisfy 3.0
摘要翻译： 这种用于电子和电气设备的铜合金的一个方面包括：大于2.0质量％至36.5质量％的Zn; 0.10质量％〜0.90质量％的Sn; 0.15质量％〜小于1.00质量％的Ni; 和0.005质量％至0.100质量％的P，余量包含Cu和不可避免的杂质，其中元素的量的原子比满足3.0
-
8.发明授权Copper alloy for electronic/electric device, copper alloy thin plate for electronic/electric device, method of producing copper alloy for electronic/electric device, conductive component for electronic/electric device and terminal 有权用于电子/电气设备的铜合金，用于电子/电气设备的铜合金薄板，用于电子/电气设备的铜合金的制造方法，用于电子/电气设备和端子的导电部件公开(公告)号：US08951369B2
公开(公告)日：2015-02-10
申请号：US14114862
申请日：2013-01-04
发明人： Kazunari Maki , Hiroyuki Mori
摘要： What is provided is a copper alloy for electronic/electric device comprising: in mass %, more than 2% and 36.5% or less of Zn; 0.1% or more and 0.9% or less of Sn; 0.05% or more and less than 1.0% of Ni; 0.001% or more and less than 0.10% of Fe; 0.005% or more and 0.10% or less of P; and the balance Cu and inevitable impurities, wherein a content ratio of Fe to Ni, Fe/Ni satisfies 0.002≦Fe/Ni
摘要翻译： 提供一种用于电子/电气装置的铜合金，其包括：以质量％计超过2％和36.5％或更少的Zn; 0.1％以上且0.9％以下的Sn; 0.05％以上且小于1.0％的Ni; 0.001％以上且小于0.10％的Fe; 0.005％以上且0.10％以下的P; 余量为Cu和不可避免的杂质，其中Fe与Ni，Fe / Ni的含量比满足0.002＆nlE; Fe / Ni <1.5，Ni和Fe之和（Ni + Fe）与P的含量比满足P 3 <（Ni + Fe）/ P <15，Sn与Ni和Fe的和（Ni + Fe）的含量比满足0.3
-
公开(公告)号：US11655523B2
公开(公告)日：2023-05-23
申请号：US17040928
申请日：2019-03-28
摘要： This copper alloy for electronic or electric devices includes: Mg: 0.15 mass % or greater and less than 0.35 mass %; and P: 0.0005 mass % or greater and less than 0.01 mass %, with a remainder being Cu and unavoidable impurities, wherein an amount of Mg [Mg] and an amount of P [P] in terms of mass ratio satisfy [Mg]+20×[P]
-
公开(公告)号：US09938606B2
公开(公告)日：2018-04-10
申请号：US14782177
申请日：2014-04-08
发明人： Kazunari Maki , Hiroyuki Mori , Isao Arai , Norihisa Iida , Takahiro Takeda , Shigeru Shimoizumi , Shin Oikawa
CPC分类号： C22C9/00 , C22F1/00 , C22F1/08 , C23C14/3414 , H01B1/026
摘要： A hot-rolled copper plate consists of pure copper having a purity of 99.99 mass % or greater, the hot-rolled copper plate having an average crystal grain diameter of 40 μm or less, and a (Σ3+Σ9) grain boundary length ratio (L (σ3+σ9)/L), which is a ratio between a total crystal grain boundary length L measured by an EBSD method and a sum L (σ3+σ9) of a Σ3 grain boundary length Lσ3 and a Σ9 grain boundary length Lσ9, being 28% or greater.
-
-
-
-
-
-
-
-
-
搜索结果
16 条记录 (耗时 0.028 秒)
