公开(公告)号：US12203158B2

公开(公告)日：2025-01-21

申请号：US18003398

申请日：2021-06-30

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Hirotaka Matsunaga ,  Kosei Fukuoka ,  Kazunari Maki ,  Kenji Morikawa ,  Shinichi Funaki ,  Hiroyuki Mori

IPC: C22C9/00 ,  C22F1/08 ,  H01B1/02 ,  H01B5/02 ,  H05K7/20

Abstract: This copper alloy contains greater than 10 mass ppm and less than 100 mass ppm of Mg, with a balance being Cu and inevitable impurities, which comprise: 10 mass ppm or less of S, 10 mass ppm or less of P, 5 mass ppm or less of Se, 5 mass ppm or less of Te, 5 mass ppm or less of Sb, 5 mass ppm or less of Bi, and 5 mass ppm or less of As. The total amount of S, P, Se, Te, Sb, Bi, and As is 30 mass ppm or less. The mass ratio [Mg]/[S+P+Se+Te+Sb+Bi+As] is 0.6 to 50, an electrical conductivity is 97% IACS or greater. The half-softening temperature ratio TLD/TTD is greater than 0.95 and less than 1.08. The half-softening temperature TLD is 210° C. or higher.

公开(公告)号：US20230143481A1

公开(公告)日：2023-05-11

申请号：US17911786

申请日：2021-03-12

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Kazuaki Sakai ,  Naoki Miyashima ,  Kazunari Maki ,  Shinichi Funaki

IPC: C25D5/50 ,  C22C9/06 ,  B32B15/01 ,  B32B15/20 ,  C25D3/30

CPC classification number: C25D5/505 ,  B32B15/01 ,  B32B15/20 ,  C22C9/06 ,  C25D3/30

Abstract: A Cu—Ni—Si based copper alloy containing Ni and Si: in a center portion in a plate thickness direction, containing 0.4% by mass or more and 5.0% by mass or less of Ni, 0.05% by mass or more and 1.5% by mass or less of Si, and the balance Cu and inevitable impurities; where an Ni concentration on a plate surface is 70% or less of a center Ni concentration in the thickness center portion; a surface layer portion having a depth from the plate surface to be 90% of the center Ni concentration; in the surface layer portion, the Ni concentration increases from the plate surface toward the thickness center portion at 5.0% by mass/µm or more and 100% by mass/µm or less of a concentration gradient; to improve the electric connection reliability under high-temperature environment.

公开(公告)号：US20220145424A1

公开(公告)日：2022-05-12

申请号：US17438954

申请日：2020-03-25

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Naoki Miyashima ,  Takanori Kobayashi ,  Kazunari Maki ,  Shinichi Funaki ,  Hiroyuki Mori ,  Yuki Ito

IPC: C22C9/00 ,  B32B15/20 ,  B32B15/01 ,  C25D5/50 ,  C25D5/34

Abstract: To improve adhesion between a plating film reducing contact electrical resistance and a copper alloy plate containing Mg. A copper alloy plate containing Mg of more than 1.2% by mass and 2% by mass or less and the balance Cu and inevitable impurities in a center portion in a plate thickness direction, in the copper alloy plate, a surface Mg concentration at a surface is 30% or less of a center Mg concentration at the center portion in the plate thickness direction, a surface layer portion having a depth from the surface to where a Mg concentration is 90% of the center Mg concentration is provided, and in the surface layer portion, the Mg concentration increases from the surface toward the center portion of the plate thickness direction with a concentration gradient of 0.2% by mass/μm or more and 50% by mass/μm or less.

公开(公告)号：US11905614B2

公开(公告)日：2024-02-20

申请号：US17764261

申请日：2020-09-29

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Naoki Miyashima ,  Kazunari Maki ,  Shinichi Funaki ,  Seiichi Ishikawa

IPC: C25D5/16 ,  C25D5/50 ,  C25D5/12 ,  C25D5/00 ,  C25D3/12 ,  C25D3/30 ,  C25D3/38 ,  H01R13/03

CPC classification number: C25D5/16 ,  C25D3/12 ,  C25D3/30 ,  C25D3/38 ,  C25D5/12 ,  C25D5/505 ,  C25D5/617 ,  H01R13/03

Abstract: A terminal material having a base material in which at least a surface is made of Cu or Cu alloy; an Ni layer with at thickness of 0.1 μm to 1.0 μm inclusive on the base material; a Cu—Sn intermetallic compound layer with a thickness of 0.2 μm to 2.5 μm inclusive on the Ni layer; and an Sn layer with a thickness of 0.5 μm to 3.0 μm inclusive on the Cu—Sn intermetallic compound layer, when cross sections of the Cu—Sn intermetallic compound layer and the Sn layer are analyzed by the EBSD method with a measuring step 0.1 μm and a boundary in which misorientation between adjacent pixels is 2° or more is deemed to be a crystal boundary, an average crystal grain size Dc of the Cu—Sn intermetallic compound layer is 0.5 μm or more, and a grain size ratio Ds/Dc is five or less.

公开(公告)号：US11795525B2

公开(公告)日：2023-10-24

申请号：US17438954

申请日：2020-03-25

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Naoki Miyashima ,  Takanori Kobayashi ,  Kazunari Maki ,  Shinichi Funaki ,  Hiroyuki Mori ,  Yuki Ito

IPC: C22C9/00 ,  C25D5/34 ,  B32B15/01 ,  B32B15/20 ,  C25D5/50

CPC classification number: C22C9/00 ,  B32B15/018 ,  B32B15/20 ,  C25D5/34 ,  C25D5/50 ,  Y10T428/12903

Abstract: To improve adhesion between a plating film reducing contact electrical resistance and a copper alloy plate containing Mg. A copper alloy plate containing Mg of more than 1.2% by mass and 2% by mass or less and the balance Cu and inevitable impurities in a center portion in a plate thickness direction, in the copper alloy plate, a surface Mg concentration at a surface is 30% or less of a center Mg concentration at the center portion in the plate thickness direction, a surface layer portion having a depth from the surface to where a Mg concentration is 90% of the center Mg concentration is provided, and in the surface layer portion, the Mg concentration increases from the surface toward the center portion of the plate thickness direction with a concentration gradient of 0.2% by mass/μm or more and 50% by mass/μm or less.

公开(公告)号：US20220316028A1

公开(公告)日：2022-10-06

申请号：US17630691

申请日：2020-08-05

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Kenji Morikawa ,  Naoki Miyashima ,  Kazunari Maki ,  Shinichi Funaki

IPC: C22C9/04 ,  B32B15/01 ,  B32B15/20 ,  C25D5/50 ,  C25D3/38

Abstract: A copper alloy plate containing in a center part of a plate thickness direction more than 2.0% (% by mass) and 32.5% or less of Zn; 0.1% or more and 0.9% or less of Sn; 0.05% or more and less than 1.0% of Ni; 0.001% or more and less than 0.1% of Fe, and 0.005% or more and 0.1% or less of P; and the balance Cu, including a surface layer part in which a surface Zn concentration in a surface is 60% or less of a center Zn concentration in the center part, having a depth from the surface to where Zn concentration is 90% of the center Zn concentration; and in the surface layer, the Zn concentration increases from the surface toward the center part in the plate thickness direction at a concentration gradient of 10% by mass/μm or more and 1000% by mass/μm or less.

公开(公告)号：US20230047984A1

公开(公告)日：2023-02-16

申请号：US17784062

申请日：2020-12-08

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Yoshiteru Akisaka ,  Naoki Miyashima ,  Kazunari Maki ,  Shinichi Funaki

IPC: C22C9/00 ,  C22F1/08

Abstract: Providing a copper alloy plate, in which center Mg concentration at a center part in a plate thickness direction 0.1 mass % or more and less than 0.3 mass %, center P concentration is 0.001 mass % or more and 0.2 mass % or less, and the balance is composed of Cu and inevitable impurities; in which surface Mg concentration at a surface is 70% or less of the center Mg concentration; in which a surface layer part defined by a prescribed thickness from the surface has a concentration gradient of Mg of 0.05 mass %/m or more and 5 mass %/m or less increasing from surface toward center part of the plate thickness direction; and in which restraint of color change of the surface and increase of electrical contact resistance, and adhesiveness of a plating film are excellent due to maximum Mg concentration in the surface layer part is 90% of the center Mg concentration.

公开(公告)号：US11572633B2

公开(公告)日：2023-02-07

申请号：US17041088

申请日：2019-03-29

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Fuyumi Mawatari ,  Kazunari Maki ,  Shinichi Funaki ,  Yuki Inoue ,  Kiyotaka Nakaya

IPC: C25D5/00 ,  B32B15/01 ,  B32B15/20 ,  C25D5/12 ,  C25D5/50 ,  C25D7/00 ,  H01R13/03 ,  H01R43/16

Abstract: A tin-plated copper terminal material in which on a substrate made of copper or copper alloy, a nickel-or-nickel-alloy layer, a copper-tin alloy layer, and a tin layer are laminated in this order; in this material, the tin layer has an average thickness 0.2 μm to 1.2 μm inclusive; the copper-tin alloy layer is a compound alloy layer in which Cu6Sn5 is a main ingredient and part of copper in the Cu6Sn5 is substituted with nickel, and an average crystal grain size is 0.2 μm to 1.5 μm inclusive; part of the copper-tin alloy layer appears on a surface of the tin layer and tin solidification parts exist like islands; and the tin solidification parts have an average diameter 10 μm to 1000 μm inclusive in a direction along the surface of the tin layer and an area ratio to the surface of the tin layer 1% to 90% inclusive.

公开(公告)号：US20210108325A1

公开(公告)日：2021-04-15

申请号：US17041088

申请日：2019-03-29

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Fuyumi Mawatari ,  Kazunari Maki ,  Shinichi Funaki ,  Yuki Inoue ,  Kiyotaka Nakaya

IPC: C25D5/12 ,  H01R13/03 ,  H01R43/16 ,  B32B15/01 ,  B32B15/20 ,  C25D5/50 ,  C25D7/00

Abstract: A tin-plated copper terminal material in which on a substrate made of copper or copper alloy, a nickel-or-nickel-alloy layer, a copper-tin alloy layer, and a tin layer are laminated in this order; in this material, the tin layer has an average thickness 0.2 μm to 1.2 μm inclusive; the copper-tin alloy layer is a compound alloy layer in which Cu6Sn5 is a main ingredient and part of copper in the Cu6Sn5 is substituted with nickel, and an average crystal grain size is 0.2 μm to 1.5 μm inclusive; part of the copper-tin alloy layer appears on a surface of the tin layer and tin solidification parts exist like islands; and the tin solidification parts have an average diameter 10 μm to 1000 μm inclusive in a direction along the surface of the tin layer and an area ratio to the surface of the tin layer 1% to 90% inclusive.

公开(公告)号：US12264407B2

公开(公告)日：2025-04-01

申请号：US17911786

申请日：2021-03-12

Applicant: MITSUBISHI MATERIALS CORPORATION

Inventor： Kazuaki Sakai ,  Naoki Miyashima ,  Kazunari Maki ,  Shinichi Funaki

IPC: B32B15/01 ,  B32B15/20 ,  C22C9/06 ,  C25D3/30 ,  C25D5/50

Abstract: A Cu—Ni—Si based copper alloy containing Ni and Si: in a center portion in a plate thickness direction, containing 0.4% by mass or more and 5.0% by mass or less of Ni, 0.05% by mass or more and 1.5% by mass or less of Si, and the balance Cu and inevitable impurities; where an Ni concentration on a plate surface is 70% or less of a center Ni concentration in the thickness center portion; a surface layer portion having a depth from the plate surface to be 90% of the center Ni concentration; in the surface layer portion, the Ni concentration increases from the plate surface toward the thickness center portion at 5.0% by mass/μm or more and 100% by mass/μm or less of a concentration gradient; to improve the electric connection reliability under high-temperature environment.