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    Thermistor, method for manufacturing same, and thermistor sensor
    1.
    发明授权
    Thermistor, method for manufacturing same, and thermistor sensor 有权

    公开(公告)号：US11532410B2

    公开(公告)日：2022-12-20

    申请号：US16957438

    申请日：2018-12-17

    Applicant: MITSUBISHI MATERIALS CORPORATION

    Inventor： Toshiaki Fujita ,  Shunpei Suzuki ,  Nagisa Sako ,  Norihisa Chitose ,  Noriaki Nagatomo

    IPC: H01C7/04 ,  G01K7/22 ,  H01C1/14 ,  H01C17/075 ,  H01C17/12 ,  H01C17/28

    Abstract: Provided is a thermistor which has a smaller change in resistance value between before and after a heat resistance test and from which a high B constant is obtained, a method for manufacturing the same, and a thermistor sensor. The thermistor is a thermistor formed on a substrate and includes: an intermediate stacked portion formed on the substrate; and a main metal nitride film layer formed of a thermistor material of a metal nitride on the intermediate stacked portion, wherein the intermediate stacked portion includes a base thermistor layer formed of a thermistor material of a metal nitride and an intermediate oxynitride layer formed on the base thermistor layer, the main metal nitride film layer is formed on the intermediate oxynitride layer, and the intermediate oxynitride layer is a metal oxynitride layer formed through oxidation of the thermistor material of the base thermistor layer immediately below the intermediate oxynitride layer.

    METAL NITRIDE FILM FOR THERMISTOR, PROCESS FOR PRODUCING SAME, AND THERMISTOR SENSOR OF FILM TYPE
    4.
    发明申请
    METAL NITRIDE FILM FOR THERMISTOR, PROCESS FOR PRODUCING SAME, AND THERMISTOR SENSOR OF FILM TYPE 有权
    用于热敏电阻的金属氮化物膜，其制造方法和电影类型的热敏电阻传感器

    公开(公告)号：US20150092820A1

    公开(公告)日：2015-04-02

    申请号：US14389229

    申请日：2013-03-25

    Applicant: MITSUBISHI MATERIALS CORPORATION

    Inventor： Hiroshi Tanaka ,  Toshiaki Fujita ,  Noriaki Nagatomo ,  Kazutaka Fujiwara ,  Hitoshi Inaba

    IPC: H01C7/00 ,  C23C14/06 ,  G01K7/22

    CPC classification number: H01C7/008 ,  C23C14/0641 ,  G01K7/22 ,  G01K7/226 ,  H01C7/04 ,  H01C17/06513 ,  H01C17/12

    Abstract: Provided are a metal nitride film for a thermistor, which has an excellent bending resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride film for a thermistor, which consists of a metal nitride represented by the general formula: TixAlyNz (where 0.70≦y/(x+y)≦0.95, 0.4≦z≦0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase, and the peak ratio of the diffraction peak intensity of a-axis orientation (100) relative to the diffraction peak intensity of c-axis orientation (002) (i.e., the diffraction peak intensity of a-axis orientation (100)/the diffraction peak intensity of c-axis orientation (002)) is 0.1 or lower in X-ray diffraction.

    Abstract translation: 提供一种用于热敏电阻的金属氮化物膜，其具有优异的耐弯曲性，并且可以直接在不烧制的膜等上沉积，其制造方法和膜型热敏电阻传感器。 用于热敏电阻的金属氮化物膜由由以下通式表示的金属氮化物组成：TixAlyNz（其中0.70＆amp; nlE; y /（x + y）＆nlE; 0.95,0.4＆nlE; z＆nlE; 0.5和x + y + z = 1），其中其晶体结构是六方纤锌矿型单相，并且a轴取向（100）的衍射峰强度相对于c轴取向（002）的衍射峰强度（002）的峰值比（ 即，a轴取向的衍射峰强度（100）/ c轴取向的衍射峰强度（002））在X射线衍射中为0.1以下。

    METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM TYPE THERMISTOR SENSOR
    5.
    发明申请
    METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM TYPE THERMISTOR SENSOR 有权
    用于热敏电阻的金属氮化物材料，其制造方法和薄膜式热敏电阻传感器

    公开(公告)号：US20150036723A1

    公开(公告)日：2015-02-05

    申请号：US14380997

    申请日：2013-02-26

    Applicant: MITSUBISHI MATERIALS CORPORATION

    Inventor： Toshiaki Fujita ,  Hiroshi Tanaka ,  Hitoshi Inaba ,  Kazutaka Fujiwara ,  Noriaki Nagatomo

    IPC: H01C7/00 ,  C30B25/06 ,  C30B29/38 ,  G01K7/22

    CPC classification number: H01C7/008 ,  C30B25/06 ,  C30B29/38 ,  G01K7/22 ,  H01C7/023 ,  H01C7/04 ,  H01C7/043 ,  H01C17/12

    Abstract: Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TixAlyNz (where 0.70≦y/(x+y)≦0.95, 0.4≦z≦0.5, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.

    Abstract translation: 提供一种用于热敏电阻的金属氮化物材料，其显示出高可靠性和高耐热性，并且可以直接在膜等上沉积而不烧制;制造用于热敏电阻的金属氮化物材料的方法和膜型热敏电阻传感器 。 用于热敏电阻的金属氮化物材料由以下通式表示的金属氮化物组成：TixAlyNz（其中0.70和nlE; y /（x + y）＆nlE; 0.95,0.4＆nlE; z＆nlE; 0.5和x + y + z = 1 ），其晶体结构为六方纤锌矿型单相。

    HEAT FLOW SWITCHING ELEMENT
    6.
    发明申请
    HEAT FLOW SWITCHING ELEMENT 有权

    公开(公告)号：US20210249581A1

    公开(公告)日：2021-08-12

    申请号：US16830847

    申请日：2020-03-26

    Applicant: MITSUBISHI MATERIALS CORPORATION ,  TOYOTA SCHOOL FOUNDATION

    Inventor： Toshiaki Fujita ,  Koya Arai ,  Tsunehiro Takeuchi ,  Takuya Matsunaga

    IPC: H01L37/00 ,  H01H37/32 ,  H01L35/30 ,  H01L23/34 ,  H01L21/02

    Abstract: Provided is a heat flow switching element which has a larger change in a thermal conductivity and has excellent thermal responsiveness. The heat flow switching element includes an N-type semiconductor layer, an insulator layer laminated on the N-type semiconductor layer, a P-type semiconductor layer laminated on the insulator layer, an N-side electrode connected to the N-type semiconductor layer, and a P-side electrode connected to the P-type semiconductor layer. In particular, the insulator layer is formed of a dielectric. Also, a plurality of N-type semiconductor layers and P-type semiconductor layers are laminated alternately with the insulator layer interposed therebetween.

    METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM TYPE THERMISTOR SENSOR
    10.
    发明申请
    METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM TYPE THERMISTOR SENSOR 审中-公开
    用于热敏电阻的金属氮化物材料，其制造方法和薄膜式热敏电阻传感器

    公开(公告)号：US20160211059A1

    公开(公告)日：2016-07-21

    申请号：US14915424

    申请日：2014-08-15

    Applicant: MITSUBISHI MATERIALS CORPORATION

    Inventor： Toshiaki Fujita ,  Hiroshi Tanaka ,  Noriaki Nagatomo

    IPC: H01C17/12 ,  G01K7/22 ,  H01C7/00

    CPC classification number: H01C17/12 ,  G01K7/223 ,  H01C7/006 ,  H01C7/008 ,  H01C7/042

    Abstract: A metal nitride material for a thermistor consists of a metal nitride represented by the general formula: Mx(Al1-wSiw)yNz (where “M” represents at least one of Ti, V, Cr, Mn, Fe, and Co, 0.0

    Abstract translation: 用于热敏电阻的金属氮化物材料由以下通式表示的金属氮化物组成：Mx（Al1-wSiw）yNz（其中“M”表示Ti，V，Cr，Mn，Fe和Co中的至少一种，0.0 < w <0.3,0.70＆amp; nlE; y /（x + y）＆nlE; 0.98,0.4＆nlE; z＆nlE; 0.5和x + y + z = 1），其中其晶体结构是六方纤锌矿型单相。 一种用于制造用于热敏电阻的金属氮化物材料的方法包括：使用M-Al-Si合金溅射靶（其中“M”表示Ti中的至少一种）在含氮气氛中通过反应溅射进行膜沉积的沉积步骤， V，Cr，Mn，Fe和Co）。

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