公开(公告)号：US20040079285A1

公开(公告)日：2004-04-29

申请号：US10279078

申请日：2002-10-24

Applicant: MOTOROLA, INC.

Inventor： Hao Li ,  Ravindranath Droopad ,  Dirk Jordan ,  Corey Overgaard ,  Zhiyi Yu

IPC: C23C016/00 ,  H01L021/306

CPC classification number: H01L21/02269 ,  C30B23/002 ,  C30B23/02 ,  C30B29/16 ,  H01L21/02197 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/31604

Abstract: High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The growth of the monocrystalline oxide film for accommodating buffer layer (24) is achieved through an automated oxygen delivery system (200) that controls a variety of oxygen control parameters, such as pressure control, ramp control, and flow control. The oxygen delivery system (200) is preferably a dual stage pressure control system (204, 206) with the ability to precisely control the oxygen profile in the growth chamber. The oxygen delivery system (200) allows total automation of oxide film growth in an MBE chamber (102).

Abstract translation: 通过形成用于生长单晶层的顺应性衬底，可以将单晶材料（26）的高质量外延层生长成覆盖在单晶衬底（22）如大硅晶片上。 容纳缓冲层（24）包括通过氧化硅的非晶界面层（28）与硅晶片隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 用于容纳缓冲层（24）的单晶氧化物膜的生长通过控制各种氧气控制参数（例如压力控制，斜坡控制和流量控制）的自动氧气输送系统（200）来实现。 氧气输送系统（200）优选是双级压力控制系统（204,206），其能够精确地控制生长室中的氧气分布。 氧输送系统（200）允许在MBE室（102）中氧化膜生长的完全自动化。