公开(公告)号：US3832202A

公开(公告)日：1974-08-27

申请号：US27883372

申请日：1972-08-08

Applicant: MOTOROLA INC ,  MOTOROLA INC

Inventor： RITCHIE K ,  RITCHIE K

IPC: C23C22/00 ,  C01B33/145 ,  H01L21/316 ,  H01L33/00 ,  C09K3/00

CPC classification number: H01L21/316 ,  C01B33/145 ,  H01L33/00 ,  Y10S148/043 ,  Y10S148/118

Abstract: THERE IS DISCLOSED A LIQUID SILICA SOURCE FOR SEMICONDUCTOR DIFFUSIONS WHICH COMPRISES IN COMBINATION 54-64% ETHYL ALCOHOL, 11-21% ETHYL ACETATE, 13-63% TETRAETHYLORTHOSILICATE, AND 3-10% WATER AND 1-8% VINYL TRICHLOROSILANE, SAID PERCENTAGES BEING BY WEIGHT. THE LIQUID SILICA SOURCE MAY BE READILY COATED ONTO THE SEMICONDUCTOR WAFER EITHER BY PAINTING, SPRAYING OR PERFERABLY SPINNING.

公开(公告)号：US3789023A

公开(公告)日：1974-01-29

申请号：US3789023D

申请日：1972-08-09

Applicant: MOTOROLA INC

Inventor： RITCHIE K

IPC: H01L21/00 ,  H01L21/22 ,  H01L21/225 ,  C09K3/00 ,  H01B1/06 ,  H05B33/00

CPC classification number: H01L21/2255 ,  H01L21/00 ,  H01L21/2225 ,  Y10S148/118 ,  Y10S148/151 ,  Y10S252/95

Abstract: THERE IS DISCLOSED A LIQUID DIFFUSION DOPANT SOURCE FOR SEMICONDUCTOR DIFFUSIONS WHICH COMPRISES IN COMBINATION 54-64% ETHYL ALCOHOL, 15-25% ETHYL ACETATE, 7-17% TETRAETHYLSILICATE, 3-10% WATER AND 0.1-10% OF A DOPING ATOM SORUCE SELECTED FROM THE GROUP CONSISTING OF THE COMPOUNDS OF ARSENIC, PHOSPHORUS, BORON ANTIMONY, ZINC, ALUMINUM, PLATINUM, GOLD AND GALLIUM. THE LIQUID DOPANT SOURCE MAY BE READILY COATED ONTO THE SEMICONDUCTOR WAFER EITHER BY PAINTING, SPRAYING OR PREFERABLY SPINNING. AFTER DRYING OF THE COATING, DIFFUSION OF THE DOPANT ATOMS INTO THE WAFER IS READILY CONDUCTED IN A STANDARD DIFFUSION FURNACE.

公开(公告)号：US3770499A

公开(公告)日：1973-11-06

申请号：US3770499D

申请日：1972-02-28

Applicant: MOTOROLA INC

Inventor： GUREV H ,  CROWE W ,  RITCHIE K

IPC: C23F1/02 ,  B44D1/02 ,  B44D1/20

CPC classification number: C23F1/02 ,  Y10S148/017 ,  Y10S148/118

Abstract: It is known to deposit zirconium dioxide, ZrO2, on a substrate comprising a chip or wafer by providing zirconium oxychloride, ZrOCl2, vapor at about 550* C, the chip or wafer being at 450* C, in an atmosphere containing water vapor. Zirconium dioxide, ZrO2, and hydrochloric acid, HCl, are produced and a layer of the ZrO2 is deposited on the chip. The ZrO2 layer acts as a passivation material having high resistivity and very good impermeability to sodium which can be destructive of the circuit on the chip or wafer. According to this invention, the ZrO2 may be deposited on a substrate at a lower temperature from a liquid solution of the zirconium oxychloride, whereby the substrate may be paper or plastic and whereby the substrate if it includes a circuit will not be injured by the temperature needed by the prior art high temperature treatment, and therefore the possible injury to the substrate or to the circuit therein by the prior art high temperature treatment is avoided.

Abstract translation: 已知在含有水蒸汽的气氛中，通过在约550℃（芯片或晶片）在450℃下，通过提供氧氯化锆，ZrOCl 2，蒸气将包含芯片或晶片的二氧化锆ZrO 2沉积在二氧化锆上。 产生二氧化锆，ZrO 2和盐酸HCl，并将一层ZrO 2沉积在芯片上。 ZrO 2层用作具有高电阻率和对钠的非常好的不渗透性的钝化材料，其可能破坏芯片或晶片上的电路。 根据本发明，ZrO 2可以在较低的温度下从氯氧化锆的液体溶液沉积在基底上，由此基底可以是纸或塑料，从而如果包括电路的基底将不会受到温度的损害 通过现有技术的高温处理需要，因此避免了通过现有技术的高温处理对基板或其电路的可能的损伤。