公开(公告)号：US20120242995A1

公开(公告)日：2012-09-27

申请号：US13423877

申请日：2012-03-19

申请人： Yusaku KONNO ,  Naotada OKADA ,  Shinichi IMAI ,  Takayoshi FUJII ,  Mitsutoshi WATABIKI ,  Makoto KANEKO ,  Yuichiro YAMAZAKI ,  Yusuke IIDA

发明人： Yusaku KONNO ,  Naotada OKADA ,  Shinichi IMAI ,  Takayoshi FUJII ,  Mitsutoshi WATABIKI ,  Makoto KANEKO ,  Yuichiro YAMAZAKI ,  Yusuke IIDA

IPC分类号： G01B9/02

CPC分类号： G01B9/02007 ,  G01B9/02038 ,  G01B9/02058 ,  G01B9/02068 ,  G01B2290/70 ,  G01N21/9501 ,  G01N21/95607

摘要： In accordance with an embodiment, a pattern inspection apparatus includes a beam splitter, a polarization controller, a phase controller, a wave front distribution controller, and a detector. The beam splitter generates signal light and reference light from light emitted from a light source. The signal light is reflected light from a pattern on a subject to be inspected. The polarization controller is configured to control the polarization angle and polarization phase of the reference light. The phase controller is configured to control the phase of the reference light. The wave front distribution controller is configured to control a wave front distribution of the reference light. The detector is configured to detect light resulting from interference caused by superposing the signal light and the reference light on each other.

摘要翻译： 根据实施例，图案检查装置包括分束器，偏振控制器，相位控制器，波前分布控制器和检测器。 分束器产生来自光源发出的光的信号光和参考光。 信号光是要检查的被检体上的图案的反射光。 偏振控制器被配置为控制参考光的偏振角和偏振相位。 相位控制器被配置为控制参考光的相位。 波前分配控制器被配置为控制参考光的波前分布。 检测器被配置为检测由信号光和参考光叠加而引起的干扰。

公开(公告)号：US20120243770A1

公开(公告)日：2012-09-27

申请号：US13308719

申请日：2011-12-01

申请人： Makoto KANEKO ,  Takayoshi FUJII ,  Yusaku KONNO ,  Mitsutoshi WATABIKI ,  Yusuke IIDA ,  Shinichi IMAI ,  Yuichiro YAMAZAKI

发明人： Makoto KANEKO ,  Takayoshi FUJII ,  Yusaku KONNO ,  Mitsutoshi WATABIKI ,  Yusuke IIDA ,  Shinichi IMAI ,  Yuichiro YAMAZAKI

IPC分类号： G06K9/00

CPC分类号： G01N21/95607 ,  G01N21/9501

摘要： In accordance with an embodiment, a pattern inspection method includes: applying a light generated from a light source to the same region of a substrate in which an inspection target pattern is formed; guiding, imaging and then detecting a reflected light from the substrate, and acquiring a detection signal for each of a plurality of different wavelengths; and adding the detection signals of the different wavelengths in association with an incident position of an imaging surface to generate added image data including information on a wavelength and signal intensity, judging, by the added image data, whether the inspection target pattern has any defect, and when judging that the inspection target pattern has a defect, detecting the position of the defect in a direction perpendicular to the substrate.

摘要翻译： 根据实施例，图案检查方法包括：将从光源产生的光施加到形成有检查对象图案的基板的相同区域; 引导，成像，然后检测来自基板的反射光，并获取多个不同波长中的每一个的检测信号; 并且与成像面的入射位置相关联地添加不同波长的检测信号，以生成包括关于波长和信号强度的信息的附加图像数据，通过添加的图像数据判断检查对象图案是否具有任何缺陷， 并且当判断为检查对象图案有缺陷时，检测出与基板垂直的方向上的缺陷的位置。

公开(公告)号：US20130063721A1

公开(公告)日：2013-03-14

申请号：US13414945

申请日：2012-03-08

申请人： Takayoshi FUJII ,  Yusaku KONNO ,  Makoto KANEKO ,  Yuichiro YAMAZAKI ,  Mitsutoshi WATABIKI ,  Kiminori YOSHINO ,  Yusuke IIDA

发明人： Takayoshi FUJII ,  Yusaku KONNO ,  Makoto KANEKO ,  Yuichiro YAMAZAKI ,  Mitsutoshi WATABIKI ,  Kiminori YOSHINO ,  Yusuke IIDA

IPC分类号： G01J3/42

CPC分类号： G01J3/42 ,  G01J3/2803 ,  G01J5/0007 ,  G01N21/95607

摘要： In one embodiment, a pattern inspection apparatus includes a light source configured to generate light, and a condenser configured to shape the light into a line beam to illuminate a wafer with the line beam. The apparatus further includes a spectrometer configured to disperse the line beam reflected from the wafer. The apparatus further includes a two-dimensional detector configured to detect the line beam dispersed by the spectrometer, and output a signal including spectrum information of the line beam. The apparatus further includes a comparison unit configured to compare the spectrum information obtained from corresponding places of a repetitive pattern on the wafer with each other, and a determination unit configured to determine whether the wafer includes a defect, based on a comparison result of the spectrum information.

摘要翻译： 在一个实施例中，图案检查装置包括被配置为产生光的光源和被配置为将光线成形为线束以用线束照射晶片的聚光器。 该装置还包括配置成分散从晶片反射的线束的光谱仪。 该装置还包括二维检测器，被配置为检测由光谱仪分散的线束，并输出包括线束的光谱信息的信号。 该装置还包括：比较单元，被配置为将从晶片上的重复图案的相应位置获得的频谱信息彼此进行比较;以及确定单元，被配置为基于频谱的比较结果来确定晶片是否包括缺陷 信息。

公开(公告)号：US20100019149A1

公开(公告)日：2010-01-28

申请号：US12538416

申请日：2009-08-10

申请人： Kenji WATANABE ,  Takeshi MURAKAMI ,  Masahiro HATAKEYAMA ,  Yoshinao HIRABAYASHI ,  Tohru SATAKE ,  Nobuharu NOJI ,  Yuichiro YAMAZAKI ,  Ichirota NAGAHAMA

发明人： Kenji WATANABE ,  Takeshi MURAKAMI ,  Masahiro HATAKEYAMA ,  Yoshinao HIRABAYASHI ,  Tohru SATAKE ,  Nobuharu NOJI ,  Yuichiro YAMAZAKI ,  Ichirota NAGAHAMA

IPC分类号： G01N23/22

CPC分类号： H01J37/32211 ,  G01N23/225 ,  H01J37/32357 ,  H01J2237/2441 ,  H01J2237/2446

摘要： An apparatus capable of detecting defects of a pattern on a sample with high accuracy and reliability and at a high throughput, and a semiconductor manufacturing method using the same are provided. The electron beam apparatus is a mapping-projection-type electron beam apparatus for observing or evaluating a surface of the sample by irradiating the sample with a primary electron beam and forming on a detector an image of reflected electrons emitted from the sample. An electron impact-type detector such as an electron impact-type CCD or an electron impact-type TDI is used as the detector for detecting the reflected electrons. The reflected electrons are selectively detected from an energy difference between the reflected electrons and secondary electrons emitted from the sample. To eliminate charge-up caused on the sample surface by irradiation with the primary electron beam, the surface of the sample is covered with a cover placed above the sample and a gas is supplied to the space above the sample covered with the cover. The gas is brought into contact with the sample surface to reduce charge-up on the sample surface.

摘要翻译： 提供了能够以高精度和可靠性以高产量检测样品上的图案的缺陷的装置，以及使用该缺陷的半导体制造方法。 电子束装置是用于通过用一次电子束照射样品来观察或评价样品的表面的映射投影型电子束装置，并在检测器上形成从样品发射的反射电子的图像。 作为检测反射电子的检测器，使用电子碰撞型CCD或电子碰撞型TDI等电子轰击型检测器。 从反射电子和从样品发射的二次电子之间的能量差选择性地检测反射电子。 为了通过照射一次电子束来消除样品表面上产生的电荷，样品的表面被放置在样品上方的盖子覆盖，并将气体供应到覆盖有覆盖物的样品上方。 气体与样品表面接触以减少样品表面的充电。

公开(公告)号：US20100096550A1

公开(公告)日：2010-04-22

申请号：US12580505

申请日：2009-10-16

申请人： Yuichiro YAMAZAKI ,  Ichirota NAGAHAMA

发明人： Yuichiro YAMAZAKI ,  Ichirota NAGAHAMA

IPC分类号： G01N23/225

CPC分类号： G01N23/2251 ,  H01J37/05 ,  H01J37/28 ,  H01J2237/057

摘要： A sample is evaluated at a high throughput by reducing axial chromatic aberration and increasing the transmittance of secondary electrons. Electron beams emitted from an electron gun 1 are irradiated onto a sample 7 through a primary electro-optical system, and electrons consequently emitted from the sample are detected by a detector 12 through a secondary electro-optical system. A Wien filter 8 comprising a multi-pole lens for correcting axial chromatic aberration is disposed between a magnification lens 10 in the secondary electro-optical system and a beam separator 5 for separating a primary electron beam and a secondary electron beam, for correcting axial chromatic aberration caused by an objective lens 14 which comprises an electromagnetic lens having a magnetic gap defined on a sample side.

摘要翻译： 通过减少轴向色差并增加二次电子的透射率，以高产量来评估样品。 从电子枪1发射的电子束通过初级电光系统照射到样品7上，由检测器12通过次级电光学系统检测从样品发射的电子。 包括用于校正轴向色差的多极透镜的维恩滤波器8设置在二次电光学系统中的放大透镜10和用于分离一次电子束和二次电子束的光束分离器5之间，用于校正轴向色度 由物镜14引起的像差包括具有限定在样品侧的磁隙的电磁透镜。