Positive photoresist composition
    1.
    发明授权
    Positive photoresist composition 失效
    正光致抗蚀剂组合物

    公开(公告)号:US5747218A

    公开(公告)日:1998-05-05

    申请号:US736206

    申请日:1996-10-25

    CPC分类号: G03F7/022

    摘要: A positive photoresist composition for ultrafine working ensuring high sensitivity, high resolution, improved film thickness dependency and improved exposure margin, which comprises an alkali-soluble resin and a 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic ester of a polyhydroxy compound of formula (I), the tetraester component thereof accounting for 50% or more of the entire pattern area determined by high-performance liquid chromatography using ultraviolet rays of 254 nm: ##STR1## wherein X represents ##STR2## and the substituents other than X are as defined in the specification.

    摘要翻译: 一种用于超细工作的正性光致抗蚀剂组合物,其确保高灵敏度,高分辨率,改善的膜厚度依赖性和改善的曝光余量,其包含碱溶性树脂和1,2-萘醌二叠氮化物-5-(和/或-4-)磺酸酯 的式(I)的多羟基化合物,其四酯成分占全部图案面积的50%以上,通过使用254nm的紫外线的高效液相色谱法测定:其中X表示,除X以外的取代基如说明书中所定义。

    Positive photoresist composition
    2.
    发明授权
    Positive photoresist composition 失效
    正光致抗蚀剂组合物

    公开(公告)号:US5750310A

    公开(公告)日:1998-05-12

    申请号:US636408

    申请日:1996-04-23

    IPC分类号: G03F7/022 G03F7/023

    CPC分类号: G03F7/022

    摘要: There are provided a positive photoresist composition comprising an alkali-soluble resin and a 1,2-naphthoquinonediazide-5-(and/or-4-) sulfonic ester of a tetrahydroxy compound having a specific structure, said ester component having a pattern area in the high-performance liquid chromatography determined using ultraviolet rays of 254 nm accounting for 50% or more of the entire pattern area and a positive photoresist composition comprising an alkali-soluble resin and 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic esters of two kinds of specific polyhydroxy compounds. The positive photoresist is suitable for ultrafine working and ensures high sensitivity and high resolution and is improved with respect to film thickness dependency and standing wave.

    摘要翻译: 提供一种正性光致抗蚀剂组合物,其包含碱溶性树脂和具有特定结构的四羟基化合物的1,2-萘醌二叠氮化物-5-(和/或 - ))磺酸酯,所述酯组分具有图案区域 使用254nm的紫外线确定的全部图案区域的50%以上的高效液相色谱法和包含碱溶性树脂和1,2-萘醌二叠氮化物-5-(和/或-4 - )两种特定多羟基化合物的磺酸酯。 正性光致抗蚀剂适用于超细加工,确保高灵敏度和高分辨率,并且在膜厚度依赖性和驻波方面得到改善。

    Positive photoresist composition
    3.
    发明授权
    Positive photoresist composition 失效
    正光致抗蚀剂组合物

    公开(公告)号:US5667932A

    公开(公告)日:1997-09-16

    申请号:US651849

    申请日:1996-05-21

    CPC分类号: G03F7/022

    摘要: Disclosed is a positive photoresist composition comprising an alkali-soluble resin and 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic esters of a polyhydroxy compound having a particular structure consisting of 5 aromatic rings linked linearly, in which each of the aromatic rings contains a hydroxyl group and the respective aromatic rings next to both the terminal rings contains a substituent group at the 5-position to the hydroxyl group thereof. The positive photoresist composition which has high resolution, low dependence of the resolution on film thickness, and broad latitude of development, leaves little development residue, and has very excellent storage stability without separation of photosensitive materials and generation of microgel (no increase in particle) with a lapse of time.

    摘要翻译: 公开了一种正型光致抗蚀剂组合物,其包含碱溶性树脂和具有由5个直链连接的芳环组成的特定结构的多羟基化合物的1,2-萘醌二叠氮化物-5-(和/或-4-)磺酸酯,其中每个 的芳环包含羟基,并且在两个末端环旁边的相应芳香环在其羟基的5位含有取代基。 具有高分辨率,低分辨率对膜厚度的依赖性低,开发宽阔的正光致抗蚀剂组合物几乎没有开发残留物,并且具有非常优异的储存稳定性,而不会分离感光材料和产生微凝胶(不增加颗粒) 随着时间的推移

    Positive photoresist composition containing alkali soluble resins and
quinonediazide ester mixture
    4.
    发明授权
    Positive photoresist composition containing alkali soluble resins and quinonediazide ester mixture 失效
    含有碱溶性树脂和醌二叠氮化物酯混合物的正性光致抗蚀剂组合物

    公开(公告)号:US5639587A

    公开(公告)日:1997-06-17

    申请号:US615832

    申请日:1996-03-14

    CPC分类号: G03F7/022

    摘要: A positive photoresist composition is disclosed, which comprises an alkali-soluble resin, at least one of 1,2-naphthoquinonediazidesulfonic monoesters of specific polyhydroxy compounds, and at least one of 1,2-naphthoquinonediazidesulfonic ester of specific polyhydroxy compounds. The positive photoresist composition exhibits remarkably improved sensitivity and resolution, and broad development latitude regardless of the film thickness, and further, low film thickness dependence of resist performances.

    摘要翻译: 公开了一种正性光致抗蚀剂组合物,其包含碱溶性树脂,特定多羟基化合物的1,2-萘醌二叠氮化物磺酸单酯中的至少一种和特定多羟基化合物的1,2-萘醌二叠氮化物磺酸酯中的至少一种。 正光致抗蚀剂组合物显示出显着提高的灵敏度和分辨率,并且广泛的开发纬度,而不管膜厚度如何,以及抗蚀剂性能的低膜厚依赖性。

    Positive working photosensitive compositions
    5.
    发明授权
    Positive working photosensitive compositions 失效
    正光敏组合物

    公开(公告)号:US5609983A

    公开(公告)日:1997-03-11

    申请号:US449294

    申请日:1995-05-24

    CPC分类号: G03F7/022

    摘要: There is provided a positive working photosensitive composition suitable for photosensitive lithographic printing plate or photoresist for fine processing, which comprises a quinonediazide ester compound having the structure characterized by containing in the same molecule both quinonediazide structure and N-sulfonylamide [--C(.dbd.O)--NHSO.sub.2 --] or sulfonamide [--NHSO.sub.2 --] structure which are positioned independently of each other.

    摘要翻译: 提供了适用于光敏平版印刷版或精细加工用光致抗蚀剂的正性感光性组合物,其包含具有以下相同分子结构的醌二叠氮化物酯化合物:醌二叠氮化物结构和N-磺酰胺[-C(= O) -NHSO 2 - ]或磺酰胺[-NHSO 2 - ]结构。

    Radiation ray sensitive resin compostion containing at least two
different naphthoquinonediazide sulfonic acid esters and an
alkali-soluble low-molecular compound
    6.
    发明授权
    Radiation ray sensitive resin compostion containing at least two different naphthoquinonediazide sulfonic acid esters and an alkali-soluble low-molecular compound 失效
    含有至少两种不同的萘醌二叠氮化物磺酸酯和碱溶性低分子化合物的辐射敏感树脂组合物

    公开(公告)号:US5700620A

    公开(公告)日:1997-12-23

    申请号:US676917

    申请日:1996-07-08

    IPC分类号: G03F7/022 G03F7/023

    CPC分类号: G03F7/022

    摘要: Disclosed is a radiation ray sensitive resin composition comprising a water-insoluble, alkali-soluble resin, a water-insoluble, alkali-soluble low-molecular compound and a radiation ray sensitive component, in which said radiation ray sensitive component contains a mixture composed of (A) a napthoquinonediazide sulfonic acid diester of water-insoluble, alkali-soluble low-molecular compounds having three and/or four phenolic hydroxyl groups and (B) a napthoquinonediazide sulfonic acid ester of a water-insoluble, alkali-soluble low-molecular compound having from 5 to 7 phenolic hydroxyl groups, in an amount of 30% or more of said radiation ray sensitive component. The composition is a positive type photoresist having a high resolution and small film thickness dependence. This has a broad latitude for development and leaves a small resist residue after development. This has high heat resistance and is therefore highly resistant to dry etching.

    摘要翻译: 本发明公开了一种辐射线敏感性树脂组合物,其包含水不溶性碱溶性树脂,水不溶性碱溶性低分子化合物和放射线敏感性成分,其中所述辐射敏感成分含有由 (A)具有三个和/或四个酚羟基的水不溶性碱溶性低分子化合物的萘醌二叠氮磺酸二酯和(B)不溶于水的碱溶性低分子量的萘醌二叠氮化物磺酸酯 具有5至7个酚羟基的化合物,其量为所述辐射敏感组分的30%或更多。 该组合物是具有高分辨率和薄膜厚度依赖性的正型光致抗蚀剂。 这具有广泛的发展空间,在开发后留下了小的抗蚀剂残留物。 这具有高耐热性,因此高耐干腐蚀性。

    Positive photoresist composition
    7.
    发明授权
    Positive photoresist composition 失效
    正光致抗蚀剂组合物

    公开(公告)号:US5629128A

    公开(公告)日:1997-05-13

    申请号:US531081

    申请日:1995-09-20

    CPC分类号: G03F7/022

    摘要: A positive photoresist composition is described, which comprises an alkali-soluble resin and 1,2-naphthoquinone-diazido-5-(and/or -4-)sulfonate of a polyhydroxy compound represented by the following formula (I): ##STR1## wherein R.sub.1 to R.sub.11 are the same or different and each represents a hydrogen atom, a halogen atom, an alkyl group, an aryl group, an alkoxyl group, an acyl group or a cycloalkyl group, provided that at least one of R.sub.1 to R.sub.11 is a cycloalkyl group; A represents -CH(R.sub.12)-, in which R.sub.12 represents a hydrogen atom or an alkyl group; and m represents 2 or 3.

    摘要翻译: 描述了一种正型光致抗蚀剂组合物,其包含由下式(I)表示的多羟基化合物的碱溶性树脂和1,2-萘醌 - 二叠氮基-5-(和/或-4-)磺酸盐: (I)其中R 1至R 11相同或不同,并且各自表示氢原子,卤素原子,烷基,芳基,烷氧基,酰基或环烷基,条件是R 1至R 11中的至少一个 R11为环烷基; A表示-CH(R 12) - ,其中R 12表示氢原子或烷基; m表示2或3。

    Positive-working photoresist composition
    8.
    发明授权
    Positive-working photoresist composition 失效
    正光刻胶组合物

    公开(公告)号:US5609982A

    公开(公告)日:1997-03-11

    申请号:US357748

    申请日:1994-12-16

    IPC分类号: G03F7/022 G03F7/023

    CPC分类号: G03F7/022

    摘要: The present invention provides a positive-working photoresist composition comprising an alkali-soluble resin and a 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic ester of a specific water-insoluble alkali-soluble low molecular compound, wherein the high-performance liquid chromatography of the ester with an ultraviolet ray at 254 nm shows that the patterns corresponding to the diester components and complete ester component of the ester each fall within the specific range and a positive-working photoresist composition comprising a water-insoluble alkali-soluble resin, a water-insoluble alkali-soluble low molecular compound, and an ionization-sensitive radioactive compound which comprises a mixture of a naphthoquinone-diazidesulfonic diester of a water-insoluble alkali-soluble low molecular compound having three phenolic hydroxyl groups as an ionization-sensitive radioactive compound (A) and a naphthoquinonediazidesulfonic diester of a water-insoluble alkali-soluble low molecular compound having four phenolic hydroxyl groups as an ionization-sensitive radioactive compound (B) in an amount of 30% or more by weight based on the total amount of the ionization-sensitive radioactive compound.

    摘要翻译: 本发明提供一种正性光致抗蚀剂组合物,其包含碱溶性树脂和特定的水不溶性碱溶性低分子化合物的1,2-萘醌二叠氮化物-5-(和/或-4-)磺酸酯,其中 使用254nm紫外线的酯的高效液相色谱显示对应于酯的二酯组分和完全酯组分的图案分别落在特定范围内,并且包含非水溶性的正性光致抗蚀剂组合物 碱溶性树脂,水不溶性碱溶性低分子化合物和电离敏感性放射性化合物,其包含具有三个酚羟基的水不溶性碱溶性低分子化合物的萘醌二叠氮烷磺酸二酯的混合物作为 电离敏感的放射性化合物(A)和不溶于水的碱溶性低分子化合物的萘醌二叠氮化物二酯 具有基于电离敏感性放射性化合物的总量为30重量%以上的量的四个酚羟基作为电离敏感性放射性化合物(B)的量。