Positive photoresist composition
    1.
    发明授权
    Positive photoresist composition 失效
    正光致抗蚀剂组合物

    公开(公告)号:US5747218A

    公开(公告)日:1998-05-05

    申请号:US736206

    申请日:1996-10-25

    CPC分类号: G03F7/022

    摘要: A positive photoresist composition for ultrafine working ensuring high sensitivity, high resolution, improved film thickness dependency and improved exposure margin, which comprises an alkali-soluble resin and a 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic ester of a polyhydroxy compound of formula (I), the tetraester component thereof accounting for 50% or more of the entire pattern area determined by high-performance liquid chromatography using ultraviolet rays of 254 nm: ##STR1## wherein X represents ##STR2## and the substituents other than X are as defined in the specification.

    摘要翻译: 一种用于超细工作的正性光致抗蚀剂组合物,其确保高灵敏度,高分辨率,改善的膜厚度依赖性和改善的曝光余量,其包含碱溶性树脂和1,2-萘醌二叠氮化物-5-(和/或-4-)磺酸酯 的式(I)的多羟基化合物,其四酯成分占全部图案面积的50%以上,通过使用254nm的紫外线的高效液相色谱法测定:其中X表示,除X以外的取代基如说明书中所定义。

    Positive photoresist composition
    2.
    发明授权
    Positive photoresist composition 失效
    正光致抗蚀剂组合物

    公开(公告)号:US5750310A

    公开(公告)日:1998-05-12

    申请号:US636408

    申请日:1996-04-23

    IPC分类号: G03F7/022 G03F7/023

    CPC分类号: G03F7/022

    摘要: There are provided a positive photoresist composition comprising an alkali-soluble resin and a 1,2-naphthoquinonediazide-5-(and/or-4-) sulfonic ester of a tetrahydroxy compound having a specific structure, said ester component having a pattern area in the high-performance liquid chromatography determined using ultraviolet rays of 254 nm accounting for 50% or more of the entire pattern area and a positive photoresist composition comprising an alkali-soluble resin and 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic esters of two kinds of specific polyhydroxy compounds. The positive photoresist is suitable for ultrafine working and ensures high sensitivity and high resolution and is improved with respect to film thickness dependency and standing wave.

    摘要翻译: 提供一种正性光致抗蚀剂组合物,其包含碱溶性树脂和具有特定结构的四羟基化合物的1,2-萘醌二叠氮化物-5-(和/或 - ))磺酸酯,所述酯组分具有图案区域 使用254nm的紫外线确定的全部图案区域的50%以上的高效液相色谱法和包含碱溶性树脂和1,2-萘醌二叠氮化物-5-(和/或-4 - )两种特定多羟基化合物的磺酸酯。 正性光致抗蚀剂适用于超细加工,确保高灵敏度和高分辨率,并且在膜厚度依赖性和驻波方面得到改善。

    Positive photoresist composition
    3.
    发明授权
    Positive photoresist composition 失效
    正光致抗蚀剂组合物

    公开(公告)号:US5667932A

    公开(公告)日:1997-09-16

    申请号:US651849

    申请日:1996-05-21

    CPC分类号: G03F7/022

    摘要: Disclosed is a positive photoresist composition comprising an alkali-soluble resin and 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic esters of a polyhydroxy compound having a particular structure consisting of 5 aromatic rings linked linearly, in which each of the aromatic rings contains a hydroxyl group and the respective aromatic rings next to both the terminal rings contains a substituent group at the 5-position to the hydroxyl group thereof. The positive photoresist composition which has high resolution, low dependence of the resolution on film thickness, and broad latitude of development, leaves little development residue, and has very excellent storage stability without separation of photosensitive materials and generation of microgel (no increase in particle) with a lapse of time.

    摘要翻译: 公开了一种正型光致抗蚀剂组合物,其包含碱溶性树脂和具有由5个直链连接的芳环组成的特定结构的多羟基化合物的1,2-萘醌二叠氮化物-5-(和/或-4-)磺酸酯,其中每个 的芳环包含羟基,并且在两个末端环旁边的相应芳香环在其羟基的5位含有取代基。 具有高分辨率,低分辨率对膜厚度的依赖性低,开发宽阔的正光致抗蚀剂组合物几乎没有开发残留物,并且具有非常优异的储存稳定性,而不会分离感光材料和产生微凝胶(不增加颗粒) 随着时间的推移

    Positive photoresist composition
    4.
    发明授权
    Positive photoresist composition 有权
    正光致抗蚀剂组合物

    公开(公告)号:US07022456B2

    公开(公告)日:2006-04-04

    申请号:US10642576

    申请日:2003-08-19

    申请人: Makoto Momota

    发明人: Makoto Momota

    摘要: A positive photoresist composition comprising: (A) an oxime sulfonate compound represented by the specific formula, (B) a resin comprising repeating units including a group represented by the specific formula and which increases the solubility in an alkaline developing solution by the action of an acid, and (C) a fluoroaliphatic-group-containing polymeric compound containing repeating units derived from a monomer represented by the specific formula.

    摘要翻译: 一种正型光致抗蚀剂组合物,其包含:(A)由特定式表示的肟磺酸盐化合物,(B)包含由特定式表示的基团的重复单元的树脂,并且其通过 酸,和(C)含有脂肪族基的含氟聚合物,其含有由特定式表示的单体衍生的重复单元。

    Positive resist composition
    5.
    发明授权
    Positive resist composition 有权
    正抗蚀剂组成

    公开(公告)号:US07338740B2

    公开(公告)日:2008-03-04

    申请号:US10809389

    申请日:2004-03-26

    IPC分类号: G03F7/00 G03F7/004

    摘要: A positive resist composition comprising (A) a resin comprising at least one kind of acrylate derivative repeating units, repeating units having lactone structures and repeating units having hydroxy group-substituted adamantane structures, having a glass transition temperature in the range of 70 to 155° C. and capable of increasing its solubility in an alkali developer under action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) an organic solvent.

    摘要翻译: 一种正型抗蚀剂组合物,其包含(A)包含至少一种丙烯酸酯衍生物重复单元的树脂,具有内酯结构的重复单元和具有羟基取代的金刚烷结构的重复单元,其玻璃化转变温度在70〜155℃的范围内 并且能够在酸的作用下增加其在碱性显影剂中的溶解度,(B)在用光化射线或辐射照射时能够产生酸的化合物和(C)有机溶剂。

    Positive resist composition and pattern formation method using the same
    6.
    发明授权
    Positive resist composition and pattern formation method using the same 有权
    正型抗蚀剂组成和使用其的图案形成方法

    公开(公告)号:US07279265B2

    公开(公告)日:2007-10-09

    申请号:US10802808

    申请日:2004-03-18

    IPC分类号: G03F7/039

    摘要: A positive resist composition comprising (A) a resin capable of increasing its solubility in an alkali developer under action of an acid, wherein the resin contains a repeating unit originated in an acrylic acid ester derivative in an amount of 50 to 100 mol % based on all repeating units and has a repeating unit having a specific lactone structure and a repeating unit having a monohydroxyadamantane or dihydroxyadamantane structure, (B) a compound of generating an acid upon irradiation with actinic rays or radiation, and (C) an organic solvent, and a pattern formation method using the composition.

    摘要翻译: 一种正型抗蚀剂组合物,其包含(A)能够在酸的作用下增加其在碱性显影剂中的溶解度的树脂,其中所述树脂含有源自丙烯酸酯衍生物的重复单元,其量为50至100摩尔%,基于 所有重复单元,具有特定内酯结构的重复单元和具有单羟基金刚烷或二羟基金刚烷结构的重复单元,(B)在用光化射线或辐射照射时产生酸的化合物,和(C)有机溶剂,以及 使用该组合物的图案形成方法。

    Bottom anti-reflective coating material composition and method for forming resist pattern using the same
    7.
    发明授权
    Bottom anti-reflective coating material composition and method for forming resist pattern using the same 失效
    底部防反射涂料组合物和使用其形成抗蚀剂图案的方法

    公开(公告)号:US06808869B1

    公开(公告)日:2004-10-26

    申请号:US09615708

    申请日:2000-07-13

    IPC分类号: G03F711

    CPC分类号: G03F7/091

    摘要: A composition for a bottom anti-reflective coating material and a method for forming a resist pattern using the composition, which are high in the dry etching rate, high in the resolution, excellent in the resist film thickness dependency and high in the effect of preventing reflective light against exposure light, and provide no intermixing with the photoresist layer, are disclosed, wherein the composition for a bottom anti-reflective coating material comprises a naphthalene group-containing polymer compound having a specific structure.

    摘要翻译: 用于底部抗反射涂层材料的组合物和使用该组合物形成抗蚀剂图案的方法,其干蚀刻速率高,分辨率高,抗蚀剂膜厚度依赖性优异,防止效果高 公开了防曝光的反射光,并且不提供与光致抗蚀剂层的混合,其中用于底部抗反射涂层材料的组合物包含具有特定结构的含萘基的聚合物化合物。

    Method of synthesizing polyphenol compound and positive working
photoresist composition comprising polyphenol compound
    8.
    发明授权
    Method of synthesizing polyphenol compound and positive working photoresist composition comprising polyphenol compound 失效
    合成多酚化合物的方法和包含多酚化合物的正性光致抗蚀剂组合物

    公开(公告)号:US5853949A

    公开(公告)日:1998-12-29

    申请号:US657773

    申请日:1996-05-31

    IPC分类号: C07C37/11 G03F7/022 G03F7/023

    摘要: Provided are a method of synthesizing a highly pure polyphenol compound, which comprises (i) introducing at least one --CHRNR'R" group onto aromatic ring(s) of a phenol compound having from one to ten aromatic ring(s), wherein R represents a hydrogen atom, an alkyl group which may contain a hetero atom, a cycloalkyl group which may contain a hetero atom, an aralkyl group which may contain a hetero atom, or an aryl group, and R' and R", which may be the same or different, each represents an alkyl group which may contain a hetero atom, a cycloalkyl group which may contain a hetero atom, an aralkyl group which may contain a hetero atom, or an aryl group, and R' and R" may combine with each other to form a ring, (ii) converting the --CHRNR'R" group into a --CHRA group via one to three steps, wherein A represents a hydroxyl group, an alkoxy group, an acyloxy group, a halogen atom, a quaternary ammonium salt or a sulfonyloxy group, and (iii) condensing the thus converted phenol compound and a phenol compound, and a positive working photoresist composition using the polyphenol compound obtained by the aforementioned method.

    摘要翻译: 提供一种合成高纯度多酚化合物的方法,其包括(i)将至少一个-CHRNR'R“基团引入到具有1至10个芳环的酚化合物的芳环上,其中 R表示氢原子,可以含有杂原子的烷基,可以含有杂原子的环烷基,可以含有杂原子的芳烷基或芳基,R'和R“,其中 可以相同或不同,各自表示可以含有杂原子的烷基,可以含有杂原子的环烷基,可以含有杂原子的芳烷基或芳基,R'和R' 可以相互结合形成环,(ii)通过一至三个步骤将-CHRNR'R“基团转化为-CHRA基团,其中A表示羟基,烷氧基,酰氧基, 卤素原子,季铵盐或磺酰氧基,和(iii)缩合由此转化的酚化合物和 酚化合物和使用通过上述方法获得的多酚化合物的正性光刻胶组合物。

    Method for preparation of printing plate by electrophotographic process
    9.
    发明授权
    Method for preparation of printing plate by electrophotographic process 失效
    通过电子照相法制备印版的方法

    公开(公告)号:US5601958A

    公开(公告)日:1997-02-11

    申请号:US413467

    申请日:1995-03-28

    IPC分类号: G03G13/26 G03G13/28

    CPC分类号: G03G13/26 G03G13/283

    摘要: A method for preparation of a printing plate by an electrophotographic process comprising forming a peelable transfer layer capable of being removed upon a chemical reaction treatment on a surface of an electrophotographic light-sensitive element, forming a toner image by an electrophotographic process on the transfer layer, heat-transferring the toner image together with the transfer layer onto a receiving material having a surface capable of providing a hydrophilic surface suitable for lithographic printing at the time of printing, and removing the transfer layer on the receiving material upon the chemical reaction treatment wherein the transfer layer is formed by an electrodeposition coating method using thermoplastic resin grains (AL) each containing a rein (A.sub.1) having a glass transition point of from 10.degree. C. to 140.degree. C. or a softening point of from 35.degree. C. to 180.degree. C. and a resin (A.sub.2) having a glass transition point of not more than 45.degree. C. or a softening point of not more than 60.degree. C. and its glass transition point or softening point is at least 2.degree. C. lower than that of the resin (A.sub.1).The transfer layer according to the present invention has excellent transferability onto a receiving material under transfer conditions of low temperature and high speed to form transferred images of good qualities thereby providing prints of good image qualities.

    摘要翻译: 一种通过电子照相方法制备印版的方法,包括在电子照相感光元件的表面上形成能够被去除的可剥离转印层,通过电子照相法在转印层上形成调色剂图像 ,将调色剂图像与转印层一起转印到具有能够在印刷时提供适于平版印刷的亲水表面的表面的接收材料上,以及在化学反应处理时去除接收材料上的转印层,其中 通过使用热塑性树脂颗粒(AL)的电沉积涂覆法形成转印层,每个含有玻璃化转变点为10℃至140℃或软化点为35℃的保护膜(A1) 至180℃的玻璃化转变点或不高于45℃的软化点的树脂(A2) 60℃以上,玻璃化转变点或软化点比树脂(A1)低至少2℃。 根据本发明的转印层在低温和高速转印条件下对接收材料具有优异的转印性,以形成良好品质的转印图像,从而提供良好图像质量的印刷品。

    Bottom anti-reflective coating material composition for photoresist and method of forming resist pattern using the same
    10.
    发明授权
    Bottom anti-reflective coating material composition for photoresist and method of forming resist pattern using the same 有权
    用于光致抗蚀剂的底部防反射涂料组合物和使用其形成抗蚀剂图案的方法

    公开(公告)号:US06399269B2

    公开(公告)日:2002-06-04

    申请号:US09397117

    申请日:1999-09-16

    IPC分类号: G03F709

    CPC分类号: G03F7/091

    摘要: A bottom anti-reflective coating material composition for a photoresist comprising the following components (a) to (d): (a) a polymer containing a dye structure having a molar extinction coefficient of 1.0×104 or more to light including a wavelength used for exposure of the photoresist; (b) a thermal crosslinking agent which is activated by an acid to react with component (a) described above, thereby forming a crosslinked structure; (c) a sulfonic acid ester compound or diaryl iodonium salt, which is decomposed to generate an acid with heating at temperature between 150 to 200° C.; and (d) an organic solvent capable of dissolving components (a) to (c) described above. The bottom anti-reflective coating material composition for a photoresist provides a bottom anti-reflective coating having a large absorbance to light including a wavelength used for exposure, and an adverse effect due to a standing wave generated by reflection from a substrate can be reduced, a limiting resolution of the photoresist is increased, and a good resist profile is obtained. A method of forming a resist pattern using the composition is also disclosed.

    摘要翻译: 一种用于光致抗蚀剂的底部抗反射涂料组合物,其包含以下组分(a)至(d):(a)含有具有摩尔吸光系数为1.0×10 4或更高的染料结构的聚合物,其包含用于曝光的波长 的光致抗蚀剂;(b)由酸活化以与上述组分(a)反应的热交联剂,由此形成交联结构;(c)磺酸酯化合物或二芳基碘鎓盐,其分解成 在150〜200℃的温度下加热生成酸。 和(d)能够溶解上述组分(a)至(c)的有机溶剂。用于光致抗蚀剂的底部抗反射涂料组合物提供具有大的吸光度的底部抗反射涂层,其包括用于 曝光以及由于从基板反射产生的驻波产生的不利影响,可以降低光致抗蚀剂的极限分辨率,获得良好的抗蚀剂图。 还公开了使用该组合物形成抗蚀剂图案的方法。