摘要:
A positive photoresist composition for ultrafine working ensuring high sensitivity, high resolution, improved film thickness dependency and improved exposure margin, which comprises an alkali-soluble resin and a 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic ester of a polyhydroxy compound of formula (I), the tetraester component thereof accounting for 50% or more of the entire pattern area determined by high-performance liquid chromatography using ultraviolet rays of 254 nm: ##STR1## wherein X represents ##STR2## and the substituents other than X are as defined in the specification.
摘要:
There are provided a positive photoresist composition comprising an alkali-soluble resin and a 1,2-naphthoquinonediazide-5-(and/or-4-) sulfonic ester of a tetrahydroxy compound having a specific structure, said ester component having a pattern area in the high-performance liquid chromatography determined using ultraviolet rays of 254 nm accounting for 50% or more of the entire pattern area and a positive photoresist composition comprising an alkali-soluble resin and 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic esters of two kinds of specific polyhydroxy compounds. The positive photoresist is suitable for ultrafine working and ensures high sensitivity and high resolution and is improved with respect to film thickness dependency and standing wave.
摘要:
Disclosed is a positive photoresist composition comprising an alkali-soluble resin and 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic esters of a polyhydroxy compound having a particular structure consisting of 5 aromatic rings linked linearly, in which each of the aromatic rings contains a hydroxyl group and the respective aromatic rings next to both the terminal rings contains a substituent group at the 5-position to the hydroxyl group thereof. The positive photoresist composition which has high resolution, low dependence of the resolution on film thickness, and broad latitude of development, leaves little development residue, and has very excellent storage stability without separation of photosensitive materials and generation of microgel (no increase in particle) with a lapse of time.
摘要:
A positive photoresist composition comprising: (A) an oxime sulfonate compound represented by the specific formula, (B) a resin comprising repeating units including a group represented by the specific formula and which increases the solubility in an alkaline developing solution by the action of an acid, and (C) a fluoroaliphatic-group-containing polymeric compound containing repeating units derived from a monomer represented by the specific formula.
摘要:
A positive resist composition comprising (A) a resin comprising at least one kind of acrylate derivative repeating units, repeating units having lactone structures and repeating units having hydroxy group-substituted adamantane structures, having a glass transition temperature in the range of 70 to 155° C. and capable of increasing its solubility in an alkali developer under action of an acid, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) an organic solvent.
摘要:
A positive resist composition comprising (A) a resin capable of increasing its solubility in an alkali developer under action of an acid, wherein the resin contains a repeating unit originated in an acrylic acid ester derivative in an amount of 50 to 100 mol % based on all repeating units and has a repeating unit having a specific lactone structure and a repeating unit having a monohydroxyadamantane or dihydroxyadamantane structure, (B) a compound of generating an acid upon irradiation with actinic rays or radiation, and (C) an organic solvent, and a pattern formation method using the composition.
摘要:
A composition for a bottom anti-reflective coating material and a method for forming a resist pattern using the composition, which are high in the dry etching rate, high in the resolution, excellent in the resist film thickness dependency and high in the effect of preventing reflective light against exposure light, and provide no intermixing with the photoresist layer, are disclosed, wherein the composition for a bottom anti-reflective coating material comprises a naphthalene group-containing polymer compound having a specific structure.
摘要:
Provided are a method of synthesizing a highly pure polyphenol compound, which comprises (i) introducing at least one --CHRNR'R" group onto aromatic ring(s) of a phenol compound having from one to ten aromatic ring(s), wherein R represents a hydrogen atom, an alkyl group which may contain a hetero atom, a cycloalkyl group which may contain a hetero atom, an aralkyl group which may contain a hetero atom, or an aryl group, and R' and R", which may be the same or different, each represents an alkyl group which may contain a hetero atom, a cycloalkyl group which may contain a hetero atom, an aralkyl group which may contain a hetero atom, or an aryl group, and R' and R" may combine with each other to form a ring, (ii) converting the --CHRNR'R" group into a --CHRA group via one to three steps, wherein A represents a hydroxyl group, an alkoxy group, an acyloxy group, a halogen atom, a quaternary ammonium salt or a sulfonyloxy group, and (iii) condensing the thus converted phenol compound and a phenol compound, and a positive working photoresist composition using the polyphenol compound obtained by the aforementioned method.
摘要:
A method for preparation of a printing plate by an electrophotographic process comprising forming a peelable transfer layer capable of being removed upon a chemical reaction treatment on a surface of an electrophotographic light-sensitive element, forming a toner image by an electrophotographic process on the transfer layer, heat-transferring the toner image together with the transfer layer onto a receiving material having a surface capable of providing a hydrophilic surface suitable for lithographic printing at the time of printing, and removing the transfer layer on the receiving material upon the chemical reaction treatment wherein the transfer layer is formed by an electrodeposition coating method using thermoplastic resin grains (AL) each containing a rein (A.sub.1) having a glass transition point of from 10.degree. C. to 140.degree. C. or a softening point of from 35.degree. C. to 180.degree. C. and a resin (A.sub.2) having a glass transition point of not more than 45.degree. C. or a softening point of not more than 60.degree. C. and its glass transition point or softening point is at least 2.degree. C. lower than that of the resin (A.sub.1).The transfer layer according to the present invention has excellent transferability onto a receiving material under transfer conditions of low temperature and high speed to form transferred images of good qualities thereby providing prints of good image qualities.
摘要:
A bottom anti-reflective coating material composition for a photoresist comprising the following components (a) to (d): (a) a polymer containing a dye structure having a molar extinction coefficient of 1.0×104 or more to light including a wavelength used for exposure of the photoresist; (b) a thermal crosslinking agent which is activated by an acid to react with component (a) described above, thereby forming a crosslinked structure; (c) a sulfonic acid ester compound or diaryl iodonium salt, which is decomposed to generate an acid with heating at temperature between 150 to 200° C.; and (d) an organic solvent capable of dissolving components (a) to (c) described above. The bottom anti-reflective coating material composition for a photoresist provides a bottom anti-reflective coating having a large absorbance to light including a wavelength used for exposure, and an adverse effect due to a standing wave generated by reflection from a substrate can be reduced, a limiting resolution of the photoresist is increased, and a good resist profile is obtained. A method of forming a resist pattern using the composition is also disclosed.