Display medium and display device
    1.
    发明授权
    Display medium and display device 有权
    显示介质和显示设备

    公开(公告)号:US08630034B2

    公开(公告)日:2014-01-14

    申请号:US13554634

    申请日:2012-07-20

    IPC分类号: G02B26/00

    摘要: A display medium of the present invention includes first and second substrates, a spacing member and a particle dispersion liquid. The first substrate is transparent to light. The second substrate is opposite to the first substrate and has plural electrodes placed at an interval. The second substrate has a difference between reflectivity of the electrode portions and reflectivity of plural boundary portions between the electrodes with respect to light incident from the first substrate side. The difference is 12 percentage points or less. The spacing member is placed between the first and second substrates at another interval, is transparent to light, and keeps a gap between the first and second substrates. The particle dispersion liquid is filled between the first and second substrates, and includes particles moving in a direction of an electric field formed between the first and second substrates and a dispersion medium.

    摘要翻译: 本发明的显示介质包括第一和第二基板,间隔部件和颗粒分散液体。 第一衬底对光是透明的。 第二基板与第一基板相对,并且具有以间隔放置的多个电极。 第二基板具有相对于从第一基板侧入射的光的电极部分的反射率和电极之间的多个边界部分的反射率的差异。 差异在12个百分点以下。 间隔构件以另一间隔放置在第一和第二基板之间,对于光是透明的,并且在第一和第二基板之间保持间隙。 颗粒分散液填充在第一和第二基板之间,并且包括在形成在第一和第二基板之间的电场方向和分散介质之间移动的颗粒。

    CRYOPRESERVATION DEVICE
    2.
    发明申请

    公开(公告)号:US20120247999A1

    公开(公告)日:2012-10-04

    申请号:US13434025

    申请日:2012-03-29

    IPC分类号: F17C1/00 B65D85/00

    摘要: Provided is a cryopreservation device which is small-sized and light-weight and has a low price, and also which is easy to get a cryocane in and out of.The cryopreservation device is configured to include first rotation lid 13 rotatably mounted on upper opening of container body 11, second rotation lid 14 rotatably provided on circular opening provided on the first rotation lid, through-hole for getting a cryocane in and out of provided on the second rotation lid, tubular body 15 provided in a protruding manner upward from the second rotation lid, lifting device 16 arranged inside the tubular body, cane gripper 17 provided on the lifting device, and door 18 provided on the tubular body, wherein any of cryocanes held at a center portion to the periphery of the container body on the cryocane holder can be gripped by rotating the first rotation lid with respect to the upper opening and by rotating the second rotation lid with respect to the first rotation lid to adjust the position of the through-hole.

    摘要翻译: 提供了一种小型,重量轻,价格低廉的低温保存装置,也是容易获得和冷藏的低温储存装置。 冷冻保存装置被配置为包括可旋转地安装在容器主体11的上部开口上的第一旋转盖13,可旋转地设置在设置在第一旋转盖上的圆形开口的第二旋转盖14,用于使冷藏库进出的提供的通孔 第二旋转盖,从第二旋转盖向上突出设置的管状体15,布置在管状体内的提升装置16,设置在提升装置上的甘蔗夹持器17和设置在管状体上的门18, 通过使第一旋转盖相对于上部开口旋转并且通过使第二旋转盖相对于第一旋转盖旋转来调节位置,从而可以夹持保持在冷藏机架上的容器主体周边的中心部分的冰箱 的通孔。

    CRYOPRESERVATION DEVICE
    3.
    发明申请

    公开(公告)号:US20100275636A1

    公开(公告)日:2010-11-04

    申请号:US12812354

    申请日:2008-11-11

    CPC分类号: A01N1/0263 A01N1/0257

    摘要: A cryopreservation vessel of the present invention includes a vessel body which holds a low-temperature liquefied gas, a cap which closes an opening section of the vessel body and has a plurality of through holes that are formed so as to pass through in a vertical direction, and ampoule storing tools which are housed so as to be able to pass through the through holes of the cap, and the ampoule storing tools are each comprised of a support pillar and a plurality of ampoule storing sections which are equipped with the support pillar so as to be arrayed in a vertical direction of the support pillar.

    摘要翻译: 本发明的低温保存容器包括容纳低温液化气体的容器主体,封闭容器主体的开口部分的盖,并且具有多个通孔,所述多个通孔形成为沿垂直方向通过 ,以及容纳于能够穿过盖的通孔的安瓿存放工具,并且安瓿存放工具各自包括支撑柱和多个安装有支撑柱的安瓿存放部, 以沿着支柱的垂直方向排列。

    Method and apparatus for setting redundancy data for semiconductor memory device
    4.
    发明授权
    Method and apparatus for setting redundancy data for semiconductor memory device 失效
    用于设置半导体存储器件的冗余数据的方法和装置

    公开(公告)号:US06396748B1

    公开(公告)日:2002-05-28

    申请号:US09546687

    申请日:2000-04-11

    申请人: Mamoru Fujita

    发明人: Mamoru Fujita

    IPC分类号: G11C2900

    CPC分类号: G11C29/72

    摘要: A semiconductor memory device in which a memory cell array is divided into a plurality of operation blocks and one regular word line is activated simultaneously in each of two or more operation block. In the semiconductor memory device, when a defective regular word line is set for replacement with a spare word line, data is recorded in fuse ROM (read only memory) in the semiconductor memory device such that a regular word line to be replaced and a replacing spare word line are located in the same operation block or not located each in combined operation blocks which are activated simultaneously. This can prevent the simultaneous activation of a regular word line and a spare word line in the same operation block and malfunction of the semiconductor memory device.

    摘要翻译: 其中存储单元阵列被分成多个操作块和一个常规字线的半导体存储器件在两个或更多个操作块中的每一个中同时被激活。 在半导体存储器件中,当用备用字线设置缺陷规则字线替换时,数据被记录在半导体存储器件中的熔丝ROM(只读存储器)中,使得要被替换的常规字线和替换 备用字线位于相同的操作块中,或者不位于同时被激活的组合操作块中。 这可以防止同一操作块中的常规字线和备用字线的同时激活以及半导体存储器件的故障。

    Semiconductor memory device with redundancy function
    5.
    发明授权
    Semiconductor memory device with redundancy function 失效
    具有冗余功能的半导体存储器件

    公开(公告)号:US06262923B1

    公开(公告)日:2001-07-17

    申请号:US09339264

    申请日:1999-06-23

    申请人: Mamoru Fujita

    发明人: Mamoru Fujita

    IPC分类号: G11C700

    CPC分类号: G11C29/785 G11C29/808

    摘要: A semiconductor memory device having redundant memory selection circuit XRDN which outputs a redundant replacement selection signal for each bank. In a refreshing operation, each redundant decoder XRED only compares an address indicated by row address signal XADD with an address of a defective memory cell stored, without referring to a bank selection signal included in row address signal XADD. Redundant memory cell selection circuit XRDN outputs redundant replacement selection signals XRDNS(A), (B) for respective banks A, B, for indicating a bank in which the replacement is to be performed with a redundant memory cell.

    摘要翻译: 具有冗余存储器选择电路XRDN的半导体存储器件,其输出每个存储体的冗余替换选择信号。 在刷新操作中,每个冗余解码器XRED仅将由行地址信号XADD指示的地址与所存储的有缺陷的存储单元的地址进行比较,而不参考包括在行地址信号XADD中的存储体选择信号。 冗余存储单元选择电路XRDN输出用于指示要用冗余存储器单元执行替换的存储体的各个存储体A,B的冗余替换选择信号XRDNS(A),(B)。

    Semiconductor memory device having means for outputting redundancy
replacement selection signal for each bank
    6.
    发明授权
    Semiconductor memory device having means for outputting redundancy replacement selection signal for each bank 失效
    半导体存储器件具有用于输出每个存储体的冗余替换选择信号的装置

    公开(公告)号:US6122206A

    公开(公告)日:2000-09-19

    申请号:US262257

    申请日:1999-03-04

    申请人: Mamoru Fujita

    发明人: Mamoru Fujita

    IPC分类号: G11C8/12 G11C29/00 G11C7/00

    CPC分类号: G11C29/785 G11C8/12

    摘要: A semiconductor memory device having redundant memory selection circuit XRDN which outputs a redundant replacement selection signal for each bank. In a refreshing operation, each redundant decoder XRED only compares an address indicated by row address signal XADD with an address of a defective memory cell stored, without referring to a bank selection signal included in row address signal XADD. Redundant memory cell selection circuit XRDN outputs redundant replacement selection signals XRDNS(A), (B) for respective banks A, B, for indicating a bank in which the replacement is to be performed with a redundant memory cell.

    摘要翻译: 具有冗余存储器选择电路XRDN的半导体存储器件,其输出每个存储体的冗余替换选择信号。 在刷新操作中,每个冗余解码器XRED仅将由行地址信号XADD指示的地址与所存储的有缺陷的存储单元的地址进行比较,而不参考包括在行地址信号XADD中的存储体选择信号。 冗余存储单元选择电路XRDN输出用于指示要用冗余存储器单元执行替换的存储体的各个存储体A,B的冗余替换选择信号XRDNS(A),(B)。

    Display medium and display device
    7.
    发明授权
    Display medium and display device 有权
    显示介质和显示设备

    公开(公告)号:US08854723B2

    公开(公告)日:2014-10-07

    申请号:US13611896

    申请日:2012-09-12

    IPC分类号: G02B26/00

    摘要: A display medium includes a first substrate that is transparent to light, a second substrate, a spacing member, and a particle dispersion liquid. The second substrate is provided to be opposite to the first substrate and has a plurality of electrodes placed at a predetermined interval. The spacing member (i) is placed between the first and second substrates at another interval different from the predetermined interval of the electrodes, (ii) has a first end portion on a first substrate side of the spacing member and a second end portion on a second substrate side of the spacing member. The first end portion is transparent to light. The second end portion has different transparency from the first end portion to reduces a reflection of light incident through the first substrate onto a first substrate side of the spacing member.

    摘要翻译: 显示介质包括对光透明的第一衬底,第二衬底,间隔构件和颗粒分散液体。 第二基板设置成与第一基板相对,并且具有以预定间隔放置的多个电极。 间隔构件(i)以与电极的预定间隔不同的间隔放置在第一和第二基板之间,(ii)在间隔构件的第一基板侧上具有第一端部,在第二基板侧上具有第二端部 间隔构件的第二基板侧。 第一端部对光是透明的。 第二端部具有与第一端部不同的透明度,以将入射到第一衬底的光的反射减少到间隔构件的第一衬底侧上。

    Semiconductor memory device capable of improving read operation speed
    9.
    发明授权
    Semiconductor memory device capable of improving read operation speed 失效
    能够提高读取操作速度的半导体存储器件

    公开(公告)号:US06219269B1

    公开(公告)日:2001-04-17

    申请号:US09547934

    申请日:2000-04-11

    申请人: Mamoru Fujita

    发明人: Mamoru Fujita

    IPC分类号: G11C506

    摘要: In a semiconductor memory device including a plurality of sense amplifiers arranged in rows, columns, a plurality of local data input/output line pairs, each pair being connected to one row of the sense amplifiers, a global data input/output line pair, a plurality of switches each connected between one of the local data input/output line pairs and the global data input/output line pair, and a differential amplifier connected to the global data input/output line pair, at least one pull-up circuit is connected to the global data input/output line pair. At least one of the switches is connected to the global data input/output line pair between the pull-up circuit and the differential amplifier.

    摘要翻译: 在包括排列成行,列,多个本地数据输入/输出线对的多个读出放大器的半导体存储器件中,每对连接到一行读出放大器,全局数据输入/输出线对, 各个连接在本地数据输入/输出线对之一和全局数据输入/输出线对之间的多个开关以及连接到全局数据输入/输出线对的差分放大器,至少一个上拉电路被连接 到全局数据输入/输出线对。 至少一个开关连接到上拉电路和差分放大器之间的全局数据输入/输出线对。

    Semiconductor memory
    10.
    发明授权

    公开(公告)号:US06212118B1

    公开(公告)日:2001-04-03

    申请号:US09211589

    申请日:1998-12-14

    申请人: Mamoru Fujita

    发明人: Mamoru Fujita

    IPC分类号: G11C700

    CPC分类号: G11C29/783 G11C11/406

    摘要: A semiconductor memory includes a plurality of memory cell arrays each composed of a plurality of memory cells, each of the memory cell arrays including a plurality of main word lines, each of which is composed of a pair of sub-word lines each connected to a plurality of memory cells, means for driving the main word lines, power supply voltage supply line driving means connected to the sub-line lines. When a redundant word line used in place of a specific sub-word line including a defective sense amplifier is activated, the number of the sub-word lines activated when a data input/output is conducted is different from the number of sub-word lines activated in a refreshing operation. When the data input/output is conducted, a replacement of a sub-word line is executed on the basis of the result of a comparison between an externally supplied row address and an internally stored row address. When the refreshing operation is conducted, the replacement of the sub-word line is executed on the basis of an output of an internal refresh address counter and simultaneously with an ordinary refreshing operation.