摘要:
A method for adjusting a frequency characteristic of an edge reflection type surface acoustic wave device includes the step of obtaining a frequency characteristic of an edge reflection type surface acoustic wave device having a piezoelectric substrate. The edge reflection type surface acoustic wave device has a pair of edges of the piezoelectric substrate which define a predetermined distance therebetween. The piezoelectric substrate is cut at a position which defines a distance that is shorter than the predetermined distance when a final frequency characteristic of the edge reflection type surface acoustic wave device is to be higher than the obtained frequency characteristic. The piezoelectric substrate is cut at a position which defines a distance that is longer than the predetermined distance when a final frequency characteristic of the edge reflection type surface acoustic wave device is to be lower than the obtained frequency characteristic.
摘要:
A longitudinally coupled resonator-type surface acoustic wave device includes interdigital transducers including a plurality of electrode fingers disposed along the propagation direction of a surface acoustic wave on a surface acoustic wave device. An electrically discontinuous portion is provided in a central portion, in the finger overlap direction, in adjacent electrode fingers in adjacent interdigital transducers, and at least one floating electrode is disposed in the finger overlap direction in the electrically discontinuous portion.
摘要:
An edge reflection type surface acoustic wave filter includes a piezoelectric substrate having two opposing edges and at least one interdigital transducer. The interdigital transducer includes split electrodes of paired electrode fingers arranged on the piezoelectric substrate such that a shear horizontal (SH-type) surface acoustic wave is excited on the piezoelectric substrate and is reflected between the two opposing edges. Each of the edges is preferably located at a distance of at least about &lgr;/2−5&lgr;/128 from a center of the paired equipotential electrode fingers, located at the respective outermost portions, in the surface acoustic wave propagation direction, of the interdigital transducer and less than about &lgr;/2 from the center of the paired equipotential electrode fingers, where &lgr; is a wavelength of the SH-type surface acoustic wave excited on the piezoelectric substrate.
摘要:
An edge reflection type surface acoustic wave device includes a surface acoustic wave substrate having an opposing pair of edges and at least one interdigital transducer located on the surface acoustic wave substrate. A Shear Horizontal type surface acoustic wave is generated by the interdigital transducer and reflected between the opposing pair of edges. The interdigital transducer is divided into a plurality of sub-IDT portions along a surface acoustic wave-propagating direction. Electrode fingers of the interdigital transducer which are closest to each other between adjacent sub-IDT portions are at the same potential so as not to be excited between the adjacent sub-IDT portions. In addition, when it is assumed that the widths of the outermost electrode fingers in the surface acoustic wave-propagating direction of the interdigital transducer are equal to the widths of the remaining electrode fingers before cutting of the substrate, the edges are arranged such that the edges are cut at a location inside of the center of the outermost electrode fingers in the surface acoustic wave-propagating direction such that a distance between the opposite edges of the substrate is not an integral multiple of &lgr;0/2.
摘要:
A surface acoustic wave device is constructed to operate using an SH type surface acoustic wave and so that the surface acoustic wave is reflected by two opposite edges of the device. The surface acoustic wave device includes a piezoelectric substrate having first and second main surfaces and the two edges arranged opposite to each other and which connect the first and second main surfaces, respectively, and an interdigital transducer having a pair of interdigital electrodes provided on the first main surface of the piezoelectric substrate and arranged so that the electrode fingers thereof are interdigitated with each other. The electrode fingers of the interdigital electrodes include a plurality of split electrodes, except for the electrode fingers located at the outermost sides in the surface acoustic wave propagation direction. The electrode fingers on the outermost sides have a width that is different from that of the split electrodes.
摘要:
An edge reflection type surface acoustic wave device utilizes a Shear Horizontal type surface acoustic wave and includes a surface acoustic wave substrate, and at least two interdigital transducers provided on one main surface of the surface acoustic wave substrate. First and second grooves are formed on the opposite ends in the surface acoustic wave propagation direction of the area where the interdigital transducer is provided. The first and second grooves extend from the one main surface of the surface acoustic wave substrate toward the other main surface thereof without reaching the other main surface. The grooves extend substantially perpendicularly to the surface acoustic wave propagation direction so as to define first and second edges for reflecting the surface acoustic wave. The first and second edges are defined by the inner sideively. walls of the first and second grooves, respectively.
摘要:
A surface acoustic wave filter apparatus includes a plurality of stages of multi-mode filters defined by edge-reflection type surface acoustic wave devices and electrically connected in series with each other. The plurality of stages of multi-mode filters are provided on a common piezoelectric substrate and arranged in a direction which is substantially perpendicular to the propagation direction of surface acoustic waves. Ground electrodes are located between the stages of the plurality of stages of multi-mode filters.
摘要:
A surface acoustic wave device includes a Y-cut, X-propagation LiTaO3 substrate, at least one interdigital transducer provided on the LiTaO3 substrate and made of Al or a metal containing Al as a major component, and an SiO2 film provided on the surface of the LiTaO3 substrate so as to cover the interdigital transducer, wherein the thickness Hs of the SiO2 film normalized by the wavelength λ of a surface acoustic wave and the cut angle θ of the LiTaO3 substrate are set to be in any one of the ranges represented by formulae (1) to (8): in the case of 0.00
摘要:
An end-surface reflection type surface acoustic wave filter is capable of increasing an attenuation amount outside a pass band while insertion loss characteristics are not seriously deteriorated. The filter is a longitudinally coupled resonator type surface acoustic wave filter using an SH type surface acoustic wave, which has first and second grooves formed in a piezoelectric substrate at the top surface thereof so as to be substantially parallel to each other and spaced from each other by a predetermined distance. In addition, IDTs which are provided between the grooves for defining the longitudinally coupled resonator type surface acoustic wave filter, reflection end-surfaces disposed on side surfaces of the first and the second grooves at the IDT sides, and one of a resin-coating layer and a protective layer made of SiO2, are provided on the top surface of the piezoelectric substrate. The resin-coating layer is arranged to cover at least a region at which the IDTs are located and at least one of the first and the second grooves so as to intrude into one of them, and the protective layer is arranged so as to cover the IDTs.
摘要:
A free edge reflective-type surface wave resonator for reflecting SH-type surface waves between two confronting free edges of a piezoelectric substrate includes a piezoelectric substrate having two confronting free edges and an interdigital transducer having a plurality of electrode fingers which are weighted by a cross width weighting method or an electrode thinning method. The weighting of the electrode fingers is performed so that an attenuation pole of a main lobe of the weighted IDT is located outside of a frequency of an attenuation pole of a normal non-weighted IDT which has the same number of electrode finger pairs as the weighted IDT. The weighting of the electrodes is such that the main lobe of the weighted IDT and a plurality of resonance characteristics determined by the attenuation poles of the normal unweighted IDT are obtained.