公开(公告)号：US12132166B2

公开(公告)日：2024-10-29

申请号：US17185122

申请日：2021-02-25

申请人： Aditi Chandra ,  Richard Van Der Linde ,  Paul Butler ,  Mao Ito ,  Jonathon Y. Simmons ,  Miki Trifunovic ,  Alex Yan ,  Arvind Kamath ,  Shoba Rao

发明人： Aditi Chandra ,  Richard Van Der Linde ,  Paul Butler ,  Mao Ito ,  Jonathon Y. Simmons ,  Miki Trifunovic ,  Alex Yan ,  Arvind Kamath ,  Shoba Rao

IPC分类号： H01M10/0562 ,  H01M10/0583 ,  H01M10/0585 ,  H01M50/178 ,  H01M50/547

CPC分类号： H01M10/0562 ,  H01M10/0583 ,  H01M10/0585 ,  H01M50/178 ,  H01M50/547

摘要： A solid-state battery and a method of making the same are disclosed. The battery includes a base frame or support, first and second exterior contacts on the base frame/support, stacked solid-state battery unit cells, first and second electrical connections, and encapsulation in contact with the base frame/support and covering the solid-state battery unit cells and the electrical connections. Each stacked solid-state battery unit cell is on a metal substrate and has exposed cathode and anode current collectors. The electrical connections respectively electrically connect the exposed cathode and anode current collectors to the first and second exterior contacts. The method includes forming the stacked solid-state battery unit cells on the base frame/support, forming the exterior contacts on the base frame/support, electrically connecting the exposed cathode and anode current collectors to the respective exterior contacts, and encapsulating the solid-state battery unit cells and the electrical connections.

公开(公告)号：US11735791B2

公开(公告)日：2023-08-22

申请号：US17185111

申请日：2021-02-25

申请人： Richard Van Der Linde ,  Aditi Chandra ,  Mao Ito ,  Alex Yan ,  Arvind Kamath ,  Shoba Rao ,  Jonathon Y Simmons

发明人： Richard Van Der Linde ,  Aditi Chandra ,  Mao Ito ,  Alex Yan ,  Arvind Kamath ,  Shoba Rao ,  Jonathon Y Simmons

IPC分类号： H01M10/058 ,  H01M50/186

CPC分类号： H01M50/186 ,  H01M10/058

摘要： The present disclosure pertains to a battery and a method of making the same. The battery includes first and second metal substrates, a first solid-state and/or thin-film battery cell on the first metal substrate, a second solid-state and/or thin-film battery cell on the second metal substrate, and a hermetic seal in a peripheral region of the first and second metal substrates. The first and second battery cells are between the first and second metal substrates, and face each other. The method includes respectively forming first and second solid-state and/or thin-film battery cells on first and second metal substrates, placing the second battery cell on the first battery cell so that the first and second battery cells are between the first and second metal substrates, and hermetically sealing the first and second battery cells in a peripheral region of the first and second metal substrates.

公开(公告)号：US5962581A

公开(公告)日：1999-10-05

申请号：US638698

申请日：1996-04-26

申请人： Shuzi Hayase ,  Yoshihiko Nakano ,  Rikako Kani ,  Mao Ito ,  Satoshi Mikoshiba ,  Takeshi Okino ,  Sawako Fujioka

发明人： Shuzi Hayase ,  Yoshihiko Nakano ,  Rikako Kani ,  Mao Ito ,  Satoshi Mikoshiba ,  Takeshi Okino ,  Sawako Fujioka

IPC分类号： C08K3/36 ,  C08K5/00 ,  C08K3/34

CPC分类号： C08K3/36 ,  C08K5/0008 ,  Y10S430/121

摘要： A method of forming a pattern comprising the steps of forming a film of an organosilane compound comprising a polysilane having a repeating unit represented by the following general formula (1) on a substrate, irradiating an actinic radiation onto a predetermined portion of the film of the organosilane compound formed on the substrate, and removing the predetermined portion of the film irradiated by the actinic radiation by dissolving it with an aqueous alkaline developing solution. ##STR1## wherein Ar is a substituted or non-substituted aryl group.

摘要翻译： 一种形成图案的方法，包括以下步骤：在基材上形成包含具有由以下通式（1）表示的重复单元的聚硅烷的有机硅烷化合物的膜，将光化辐射照射到所述膜的预定部分上 在基板上形成的有机硅烷化合物，并且通过用碱性显影液溶解来除去由光化辐射照射的膜的预定部分。 其中Ar是取代或未取代的芳基。

公开(公告)号：US10667397B2

公开(公告)日：2020-05-26

申请号：US15780217

申请日：2016-12-12

申请人： Mao Ito

发明人： Mao Ito

IPC分类号： H05K1/18 ,  H01Q1/38 ,  H01L23/498 ,  H01L21/48 ,  H01Q1/22 ,  H01Q7/00 ,  H01L23/00 ,  H05K1/09 ,  H05K1/11 ,  H05K3/34

摘要： An electronic device, and methods of manufacturing the same are disclosed. The method of manufacturing the electronic device includes forming a first metal layer on a first substrate, forming an integrated circuit or a discrete electrical component on a second substrate, forming electrical connectors on input and/or output terminals of the integrated circuit or discrete electrical component, forming a second metal layer on the first metal layer, the second metal layer improving adhesion and/or electrical connectivity of the first metal layer to the electrical connectors on the integrated circuit or discrete electrical component, and electrically connecting the electrical connectors to the second metal layer.

公开(公告)号：US07498015B1

公开(公告)日：2009-03-03

申请号：US10789317

申请日：2004-02-27

申请人： Klaus Kunze ,  Wenzhuo Guo ,  Fabio Zurcher ,  Mao Ito ,  Laila Francisco ,  Joerg Rockenberger ,  Brent Ridley

发明人： Klaus Kunze ,  Wenzhuo Guo ,  Fabio Zurcher ,  Mao Ito ,  Laila Francisco ,  Joerg Rockenberger ,  Brent Ridley

IPC分类号： C01B6/00

CPC分类号： C01B6/00 ,  C01B6/003 ,  C01B6/34

摘要： A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

摘要翻译： 制备具有还原的金属基杂质的氢化IVA族化合物的方法，包括这种IVA族化合物的组合物和油墨以及形成半导体薄膜的方法。 根据本发明制备的薄半导体膜通常相对于通过相同方法制备但不具有洗涤步骤的其它相同结构显示改进的导电性，膜形态和/或载流子迁移率。 此外，本发明的薄膜的性质通常比从根据本发明未被洗涤的类似制备的（环）硅烷生产的薄膜的性能更可预测。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时实现了在几秒或几分钟而不是几小时或几天内形成这种薄膜的高通量制造工艺， 与传统的光刻工艺。