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公开(公告)号：US20100029476A1
公开(公告)日：2010-02-04
申请号：US12445322
申请日：2007-11-05
Applicant: Natalia Trukhan , Ulrich Mueller , Markus Schubert
Inventor： Natalia Trukhan , Ulrich Mueller , Markus Schubert
CPC classification number: B01J31/1691 , B01D53/02 , B01D2253/204 , B01J20/226 , B01J2531/22 , C01B3/0015 , C01B6/003 , C01B7/00 , C01B13/0281 , C01B21/0455 , C01B23/0057 , C07C63/24 , C07F3/003 , F17C11/005 , Y02C10/08 , Y02E60/328
Abstract: The present invention relates to a porous metal organic framework formed by Mg2+ ions to which 5-tert-butylisophthalate ions are coordinated to form a framework structure. The invention further provides a process for preparing it and its use, for example for the storage, separation or controlled release of a substance such as a gas or gas mixture.
Abstract translation: 本发明涉及由Mg 2+离子形成的多孔金属有机骨架，其中5-叔丁基间苯二甲酸酯离子被配位以形成骨架结构。 本发明进一步提供其制备方法及其用途，例如用于诸如气体或气体混合物的物质的储存，分离或控制释放。
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公开(公告)号：US5562809A
公开(公告)日：1996-10-08
申请号：US380192
申请日：1995-01-30
Applicant: Lev M. Sorokin
Inventor： Lev M. Sorokin
CPC classification number: C01B23/0005 , C01B6/003 , C01B6/06
Abstract: A method for making metastable compounds of Me metal, argon and hydrogen, comprising the steps of generating a high frequency plasma discharge in a flow of hydrogen-argon gas mixture, the plasma discharge having a higher temperature plasma generating active region and producing a flow of plasma downstream of the plasma discharge; establishing a zone of substantially zero axial flow of the mixture within the active region of the plasma discharge relative to the flow of plasma immediately downstream of the generating means; introducing finely powdered Me metal into or near the zone and within the active region at a rate conducive to evaporation of the metal in the plasma discharge; rapidly cooling the reaction products resulting from interaction of the Me metal with the plasma to precipitate a solid component; and passivating the surface of the solid component.
Abstract translation: 一种制备Me金属，氩和氢的亚稳态化合物的方法，包括以下步骤：在氢 - 氩气体混合物流中产生高频等离子体放电，等离子体放电具有较高温度的等离子体产生活性区域，并产生 等离子体等离子体放电下游; 在所述等离子体放电的有源区域内相对于所述发生装置的下游的等离子体流动建立所述混合物基本为零轴向流动的区域; 以有利于等离子体放电中的金属蒸发的速率将精细粉末化的Me金属引入到该区域内或附近的有源区域内; 快速冷却由Me金属与等离子体的相互作用产生的反应产物以沉淀出固体成分; 并钝化固体组分的表面。
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公开(公告)号：US20240228278A1
公开(公告)日：2024-07-11
申请号：US18403863
申请日：2024-01-04
Inventor： Peter Anand Sharma , Vitalie Stavila , Sakun Duwal , Dan Catalin Spataru
IPC: C01B6/00
CPC classification number: C01B6/003 , C01P2002/77
Abstract: Rare earth (RE) superhydrides exhibit high temperature superconductivity but are difficult to characterize and use in applications due to their high formation and stability pressures, which are typically in excess of 100 GPa. Cryomilling of metal precursors improves hydrogen reactivity and hydrogen uptake for forming such metal hydrides at lower pressures. As an example, an elemental lanthanum precursor was milled at liquid nitrogen temperatures for different time intervals. After exposure to gaseous hydrogen at 380° C. and 100 bar, a systematic enhancement of hydrogen absorption with increasing ball milling time was found for forming the LaHx, x=2-3 phase. Exposing the La precursor to pressures up to 60 GPa with an ammonia borane (BNH6) hydrogen source resulted in a hypervalent LaH4 phase. This LaH4 phase is associated with the suppression of a rhombohedral distortion of the Fm3m cubic structure after cryomilling the precursor.
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公开(公告)号：US20110110847A1
公开(公告)日：2011-05-12
申请号：US13006581
申请日：2011-01-14
Applicant: Natalia TRUKHAN , Ulrich Müller , Markus Schubert
Inventor： Natalia TRUKHAN , Ulrich Müller , Markus Schubert
CPC classification number: B01J31/1691 , B01D53/02 , B01D2253/204 , B01J20/226 , B01J2531/22 , C01B3/0015 , C01B6/003 , C01B7/00 , C01B13/0281 , C01B21/0455 , C01B23/0057 , C07C63/24 , C07F3/003 , F17C11/005 , Y02C10/08 , Y02E60/328
Abstract: A method for storing, separating or controlled releasing of at least one substance, by up taking the at least one substance by a porous metal organic framework material formed by Mg2+ ions to which 5-tert-buthylisophthalate ions are coordinated to form a framework structure.
Abstract translation: 一种用于储存，分离或控制释放至少一种物质的方法，通过将由Mg2 +离子形成的多孔金属有机骨架材料取代至少一种物质，其中5-叔丁基间苯二甲酸酯离子被配位以形成骨架结构。
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公开(公告)号：US5462723A
公开(公告)日：1995-10-31
申请号：US391489
申请日：1995-02-21
Applicant: William W. Berry
Inventor： William W. Berry
Abstract: Aqueous hydrides including a metal, a metal hydroxide and water and a method of manufacture therefor are provided. The method includes a reaction which does not require precise stoichiometric proportions of metal, alkali hydroxide and water. The specific gravity of the reaction mixture is monitored and adjusted where appropriate during the reaction process. Temperature and rate of reaction are controlled to prevent formation of silicates. Aqueous by, rises produced in accordance with the invention exhibit polymer characteristics and are suitable for use as coatings, reducing viscosity, sequestering agents, emulsion agents, surfactants, detergents and the like.
Abstract translation: 提供了包括金属，金属氢氧化物和水的水合氢化物及其制造方法。 该方法包括不需要精确化学计量比的金属，碱金属氢氧化物和水的反应。 在反应过程中适当地监测和调节反应混合物的比重。 控制温度和反应速率以防止硅酸盐的形成。 根据本发明生产的水性上升物质显示出聚合物特性，并且适合用作涂料，降低粘度，螯合剂，乳液剂，表面活性剂，洗涤剂等。
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Patent Agency Ranking
6.发明授权Inorganic magnesium solid electrolyte, magnesium battery, and method for producing inorganic magnesium solid electrolyte 有权无机镁固体电解质，镁电池和无机镁固体电解质的制备方法公开(公告)号：US09017880B2
公开(公告)日：2015-04-28
申请号：US13890647
申请日：2013-05-09
Applicant: Kabushiki Kaisha Toyota Chuo Kenkyusho
Inventor： Shougo Higashi , Masakazu Aoki
IPC: H01M10/0562 , H01M10/054 , C01B21/092 , C01B6/00 , C01B6/15
CPC classification number: H01M10/0562 , C01B6/003 , C01B6/15 , C01B21/092 , C01P2002/72 , H01M10/054 , H01M2300/0068
Abstract: A magnesium battery 10 according to the present invention includes a positive electrode 12, a negative electrode 14 having a magnesium-containing negative electrode active material, and an inorganic magnesium solid electrolyte 16 that is interposed between the positive electrode 12 and the negative electrode 14, has a complex ion structure that contains magnesium and hydrogen, and conducts magnesium ions. The inorganic magnesium solid electrolyte 16 may contain a compound having at least one selected from boron and nitrogen. The inorganic magnesium solid electrolyte may be produced by a production method that includes a heat-treatment step of mixing and heating Mg(BH4)2 and Mg(NH2)2 to form a compound having a complex ion structure that contains magnesium and hydrogen.
Abstract translation: 根据本发明的镁电池10包括正极12，具有含镁负极活性物质的负极14和插在正极12和负极14之间的无机镁固体电解质16， 具有复杂的离子结构，其含有镁和氢，并传导镁离子。 无机镁固体电解质16可以含有选自硼和氮中的至少一种的化合物。 无机镁固体电解质可以通过包括混合并加热Mg（BH 4）2和Mg（NH 2）2）以形成具有含有镁和氢的复合离子结构的化合物的热处理步骤的制备方法来制备。
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7.发明申请INORGANIC MAGNESIUM SOLID ELECTROLYTE, MAGNESIUM BATTERY, AND METHOD FOR PRODUCING INORGANIC MAGNESIUM SOLID ELECTROLYTE 有权无机磁固体电解质，镁电池及其制造无机固体电解质的方法公开(公告)号：US20130316249A1
公开(公告)日：2013-11-28
申请号：US13890647
申请日：2013-05-09
Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
Inventor： Shougo HIGASHI , Masakazu AOKI
IPC: H01M10/0562 , H01M10/054
CPC classification number: H01M10/0562 , C01B6/003 , C01B6/15 , C01B21/092 , C01P2002/72 , H01M10/054 , H01M2300/0068
Abstract: A magnesium battery 10 according to the present invention includes a positive electrode 12, a negative electrode 14 having a magnesium-containing negative electrode active material, and an inorganic magnesium solid electrolyte 16 that is interposed between the positive electrode 12 and the negative electrode 14, has a complex ion structure that contains magnesium and hydrogen, and conducts magnesium ions. The inorganic magnesium solid electrolyte 16 may contain a compound having at least one selected from boron and nitrogen. The inorganic magnesium solid electrolyte may be produced by a production method that includes a heat-treatment step of mixing and heating Mg(BH4)2 and Mg(NH2)2 to form a compound having a complex ion structure that contains magnesium and hydrogen.
Abstract translation: 根据本发明的镁电池10包括正极12，具有含镁负极活性物质的负极14和插在正极12和负极14之间的无机镁固体电解质16， 具有复杂的离子结构，其含有镁和氢，并传导镁离子。 无机镁固体电解质16可以含有选自硼和氮中的至少一种的化合物。 无机镁固体电解质可以通过包括混合并加热Mg（BH 4）2和Mg（NH 2）2）以形成具有含有镁和氢的复合离子结构的化合物的热处理步骤的制备方法来制备。
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8.发明授权Silane compositions, methods of making the same, method for forming a semiconducting and/or silicon-containing film, and thin film structures formed therefrom 有权硅烷组合物，其制备方法，形成半导体和/或含硅膜的方法以及从其形成的薄膜结构公开(公告)号：US08367031B1
公开(公告)日：2013-02-05
申请号：US13349838
申请日：2012-01-13
Applicant: Klaus Kunze , Wenzhuo Guo , Fabio Zurcher , Mao Takashima , Laila Francisco , Joerg Rockenberger , Brent Ridley
Inventor： Klaus Kunze , Wenzhuo Guo , Fabio Zurcher , Mao Takashima , Laila Francisco , Joerg Rockenberger , Brent Ridley
IPC: C01B31/36
Abstract: A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.
Abstract translation: 制备具有还原的金属基杂质的氢化IVA族化合物的方法，包括这种IVA族化合物的组合物和油墨以及形成半导体薄膜的方法。 根据本发明制备的薄半导体膜通常相对于通过相同方法制备但不具有洗涤步骤的其它相同结构显示改进的导电性，膜形态和/或载流子迁移率。 此外，本发明的薄膜的性质通常比从根据本发明未被洗涤的类似制备的（环）硅烷生产的薄膜的性能更可预测。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时实现了在几秒或几分钟而不是几小时或几天内形成这种薄膜的高通量制造工艺， 与传统的光刻工艺。
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公开(公告)号：US3991121A
公开(公告)日：1976-11-09
申请号：US469183
申请日：1974-05-13
Applicant: Jawad H. Murib , Stuart Schott , Charles A. Bonecutter
Inventor： Jawad H. Murib , Stuart Schott , Charles A. Bonecutter
CPC classification number: C01B6/003
Abstract: A Lewis base complex of a haloberyllium hydride is prepared by reacting a hydride of an alkali metal or alkaline earth metal with a solution of beryllium halide in the presence of a Lewis base.
Abstract translation: 通过使碱金属或碱土金属的氢化物与卤化铍的溶液在路易斯碱的存在下反应来制备卤代卤化物的路易斯碱络合物。
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公开(公告)号：US08124040B1
公开(公告)日：2012-02-28
申请号：US12858327
申请日：2010-08-17
Applicant: Klaus Kunze , Wenzhuo Guo , Fabio Zurcher , Mao Takashima , Laila Francisco , Joerg Rockenberger , Brent Ridley
Inventor： Klaus Kunze , Wenzhuo Guo , Fabio Zurcher , Mao Takashima , Laila Francisco , Joerg Rockenberger , Brent Ridley
IPC: C01B31/36
Abstract: A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.
Abstract translation: 制备具有还原的金属基杂质的氢化IVA族化合物的方法，包括这种IVA族化合物的组合物和油墨以及形成半导体薄膜的方法。 根据本发明制备的薄半导体膜通常相对于通过相同方法制备但不具有洗涤步骤的其它相同结构显示改进的导电性，膜形态和/或载流子迁移率。 此外，本发明的薄膜的性质通常比从根据本发明未被洗涤的类似制备的（环）硅烷生产的薄膜的性能更可预测。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时实现了在几秒或几分钟而不是几小时或几天内形成这种薄膜的高通量制造工艺， 与传统的光刻工艺。
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