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1.发明申请公开(公告)号：US20130017486A1
公开(公告)日：2013-01-17
申请号：US13617634
申请日：2012-09-14
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
CPC分类号： G03F7/091 , G03F7/0757 , Y10T428/24942 , Y10T428/31663
摘要： A lithographic structure comprising: an organic antireflective material disposed on a substrate, and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.
摘要翻译： 一种光刻结构，包括：设置在基板上的有机抗反射材料和设置在有机抗反射材料上的硅抗反射材料。 硅抗反射材料包括具有SiO x主链，发色团和对193nm或157nm辐射基本上透明的透明有机基团的交联聚合物。 组合地，有机抗反射材料和硅抗反射材料提供适用于深紫外光刻的抗反射材料。 本发明还涉及制备光刻结构的方法。
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2.发明授权公开(公告)号：US08293454B2
公开(公告)日：2012-10-23
申请号：US12199253
申请日：2008-11-18
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
CPC分类号： G03F7/091 , G03F7/0757 , Y10T428/24942 , Y10T428/31663
摘要： A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.
摘要翻译： 一种光刻结构，包括：设置在基板上的有机抗反射材料; 以及设置在有机抗反射材料上的硅抗反射材料。 硅抗反射材料包括具有SiO x主链，发色团和对193nm或157nm辐射基本透明的透明有机基团的交联聚合物。 组合地，有机抗反射材料和硅抗反射材料提供适用于深紫外光刻的抗反射材料。 本发明还涉及制备光刻结构的方法。
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3.发明授权Process of making a semiconductor device using multiple antireflective materials 有权制造使用多种抗反射材料的半导体器件的工艺公开(公告)号：US07968270B2
公开(公告)日：2011-06-28
申请号：US12197571
申请日：2008-08-25
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
CPC分类号： G03F7/091 , Y10S438/952
摘要： A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.
摘要翻译： 一种光刻结构，主要由以下部分组成：设置在基板上的有机抗反射材料; 气相沉积的RCHX材料，其中R是选自Si，Ge，B，Sn，Fe和Ti中的一种或多种元素，并且其中X不存在或者是选自以下的一种或多种元素： O，N，S和F; 以及设置在RCHX材料上的光致抗蚀剂材料。 本发明还涉及制造光刻结构的方法，并且使用该结构来图案化衬底。
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4.发明申请公开(公告)号：US20090061355A1
公开(公告)日：2009-03-05
申请号：US12199253
申请日：2008-11-18
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
CPC分类号： G03F7/091 , G03F7/0757 , Y10T428/24942 , Y10T428/31663
摘要： A lithographic structure comprising: an organic antireflective material disposed on a substrate; and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.
摘要翻译： 一种光刻结构，包括：设置在基板上的有机抗反射材料; 以及设置在有机抗反射材料上的硅抗反射材料。 硅抗反射材料包括具有SiO x主链，发色团和对193nm或157nm辐射基本透明的透明有机基团的交联聚合物。 组合地，有机抗反射材料和硅抗反射材料提供适用于深紫外光刻的抗反射材料。 本发明还涉及制备光刻结构的方法。
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5.发明申请PROCESS OF MAKING A SEMICONDUCTOR DEVICE USING MULTIPLE ANTIREFLECTIVE MATERIALS 有权使用多种抗反射材料制备半导体器件的工艺公开(公告)号：US20080311508A1
公开(公告)日：2008-12-18
申请号：US12197571
申请日：2008-08-25
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
CPC分类号： G03F7/091 , Y10S438/952
摘要： A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.
摘要翻译： 一种光刻结构，主要由以下部分组成：设置在基板上的有机抗反射材料; 气相沉积的RCHX材料，其中R是选自Si，Ge，B，Sn，Fe和Ti中的一种或多种元素，并且其中X不存在或者是选自以下的一种或多种元素： O，N，S和F; 以及设置在RCHX材料上的光致抗蚀剂材料。 本发明还涉及制造光刻结构的方法，并且使用该结构来图案化衬底。
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6.发明授权公开(公告)号：US08609322B2
公开(公告)日：2013-12-17
申请号：US13617634
申请日：2012-09-14
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
IPC分类号： G03F7/075
CPC分类号： G03F7/091 , G03F7/0757 , Y10T428/24942 , Y10T428/31663
摘要： A lithographic structure comprising: an organic antireflective material disposed on a substrate, and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.
摘要翻译： 一种光刻结构，包括：设置在基板上的有机抗反射材料和设置在有机抗反射材料上的硅抗反射材料。 硅抗反射材料包括具有SiO x主链，发色团和对193nm或157nm辐射基本透明的透明有机基团的交联聚合物。 组合地，有机抗反射材料和硅抗反射材料提供适用于深紫外光刻的抗反射材料。 本发明还涉及制备光刻结构的方法。
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7.发明授权Process of making a semiconductor device using multiple antireflective materials 失效制造使用多种抗反射材料的半导体器件的工艺公开(公告)号：US07485573B2
公开(公告)日：2009-02-03
申请号：US11356027
申请日：2006-02-17
申请人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
发明人： Marie Angelopoulos , Katherina E. Babich , Sean D. Burns , Richard A. Conti , Allen H. Gabor , Scott D. Halle , Arpan P. Mahorowala , Dirk Pfeiffer
IPC分类号： H01L21/4763
CPC分类号： G03F7/091 , Y10S438/952
摘要： A lithographic structure consisting essentially of: an organic antireflective material disposed on a substrate; a vapor-deposited RCHX material, wherein R is one or more elements selected from the group consisting of Si, Ge, B, Sn, Fe and Ti, and wherein X is not present or is one or more elements selected from the group consisting of O, N, S and F; and a photoresist material disposed on the RCHX material. The invention is also directed to methods of making the lithographic structure, and using the structure to pattern a substrate.
摘要翻译： 一种光刻结构，主要由以下部分组成：设置在基板上的有机抗反射材料; 气相沉积的RCHX材料，其中R是选自Si，Ge，B，Sn，Fe和Ti中的一种或多种元素，并且其中X不存在或者是选自以下的一种或多种元素： O，N，S和F; 以及设置在RCHX材料上的光致抗蚀剂材料。 本发明还涉及制造光刻结构的方法，并且使用该结构来图案化衬底。
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8.发明授权公开(公告)号：US07077903B2
公开(公告)日：2006-07-18
申请号：US10705577
申请日：2003-11-10
申请人： Katherina E. Babich , Scott D. Halle , David V. Horak , Arpan P. Mahorowala , Wesley C. Natzle , Dirk Pfeiffer , Hongwen Yan
发明人： Katherina E. Babich , Scott D. Halle , David V. Horak , Arpan P. Mahorowala , Wesley C. Natzle , Dirk Pfeiffer , Hongwen Yan
IPC分类号： C30B25/02
CPC分类号： H01L21/0275 , H01L21/31144 , H01L21/32139 , Y10T428/24843
摘要： Methods for generating a nanostructure and for enhancing etch selectivity, and a nanostructure are disclosed. The invention implements a tunable etch-resistant anti-reflective (TERA) material integration scheme which gives high etch selectivity for both etching pattern transfer through the TERA layer (used as an ARC and/or hardmask) with etch selectivity to the patterned photoresist, and etching to pattern transfer through a dielectric layer of nitride. This is accomplished by oxidizing a TERA layer after etching pattern transfer through the TERA layer to form an oxidized TERA layer having chemical properties similar to oxide. The methods provide all of the advantages of the TERA material and allows for high etch selectivity (approximately 5–10:1) for etching to pattern transfer through nitride. In addition, the methodology reduces LER and allows for trimming despite reduced photoresist thickness.
摘要翻译： 公开了产生纳米结构和提高蚀刻选择性的方法，以及纳米结构。 本发明实现了可调谐抗蚀抗反射（TERA）材料集成方案，其对蚀刻图案转移通过TERA层（用作ARC和/或硬掩模）提供了高蚀刻选择性，具有对图案化光致抗蚀剂的蚀刻选择性，以及 蚀刻到通过氮化物的介电层的图案转移。 这是通过在通过TERA层蚀刻图案转移之后氧化TERA层来实现的，以形成具有与氧化物相似的化学性质的氧化TERA层。 这些方法提供了TERA材料的所有优点，并且允许高蚀刻选择性（约5-10:1）蚀刻到通过氮化物的图案转移。 此外，该方法减少LER，并允许尽管减少光致抗蚀剂厚度的修剪。
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9.发明授权公开(公告)号：US07326442B2
公开(公告)日：2008-02-05
申请号：US11180788
申请日：2005-07-14
申请人： Katherina E. Babich , Sean D. Burns , Elbert E. Huang , Arpan P. Mahorowala , Dirk Pfeiffer , Karen Temple
发明人： Katherina E. Babich , Sean D. Burns , Elbert E. Huang , Arpan P. Mahorowala , Dirk Pfeiffer , Karen Temple
CPC分类号： G03F7/091 , Y10T428/31663
摘要： An antireflective composition and a lithographic structure comprising a silicon-metal oxide, antireflective material derived from the composition. The antireflective composition comprises a polymer of formula I, wherein 1≦x≦2; 1≦y≦5; 1≧0; m>0; n>0; R is a chromophore, M is a metal selected from Group IIIB to Group VIB, lanthanides, Group IIIA, Group IVA except silicon; and L is an optional ligand. The invention is also directed to a process of making a lithographic structure including a silicon-metal oxide, antireflective material.
摘要翻译： 一种抗反射组合物和包含硅 - 金属氧化物，衍生自该组合物的抗反射材料的光刻结构。 抗反射组合物包含式I的聚合物，其中1≤x≤2; 1 <= y <= 5; 1> = 0; m> 0; n> 0; R是发色团，M是选自IIIB族至VIB族的镧系元素，镧系元素，IIIA族，IVA族除外; L是任选的配体。 本发明还涉及制备包括硅 - 金属氧化物，抗反射材料的光刻结构的方法。
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公开(公告)号：US07545041B2
公开(公告)日：2009-06-09
申请号：US11337411
申请日：2006-01-23
申请人： Scott D. Allen , Katherina E. Babich , Steven J. Holmes , Arpan P. Mahorowala , Dirk Pfeiffer , Richard Stephan Wise
发明人： Scott D. Allen , Katherina E. Babich , Steven J. Holmes , Arpan P. Mahorowala , Dirk Pfeiffer , Richard Stephan Wise
CPC分类号： H01L21/31144 , H01L21/0276 , H01L21/0337 , H01L21/0338 , H01L21/31116 , Y10T428/24802 , Y10T428/24926
摘要： Techniques for semiconductor processing are provided. In one aspect, a method for patterning one or more features in a semiconductor device comprises the following step. At least one critical dimension of the one or more features is reduced during etching of the antireflective material. A lithographic structure is also provided.
摘要翻译： 提供了半导体处理技术。 在一个方面，一种用于图案化半导体器件中的一个或多个特征的方法包括以下步骤。 在抗反射材料的蚀刻期间，一个或多个特征的至少一个临界尺寸被减小。 还提供了光刻结构。
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