公开(公告)号：US06646315B1

公开(公告)日：2003-11-11

申请号：US10126664

申请日：2002-04-22

申请人： Mark B. Johnson ,  Gary A. Prinz

发明人： Mark B. Johnson ,  Gary A. Prinz

IPC分类号： H01L31115

CPC分类号： H01L43/065

摘要： A Hall effect device comprising: (a) an electrically-conductive layer or plate having a top surface; and (b) a ferromagnetic layer, where the conductive film or layer is composed of high mobility semiconductors. Also, a Hall effect device can have a ferromagnetic element that is a multilayer (e.g., a bilayer), and a device in which the Hall plate comprises an indium compound, germanium or mixtures thereof. The devices are useful for a variety of applications such as a memory element in a nonvolatile random access memory array (NRAM) and as a logic gate.

摘要翻译： 一种霍尔效应装置，包括：（a）具有顶表面的导电层或板; 和（b）铁磁层，其中导电膜或层由高迁移率半导体组成。 此外，霍尔效应器件可以具有多层（例如，双层）的铁磁元件，其中霍尔板包括铟化合物，锗或其混合物的器件。 这些设备对于诸如非易失性随机存取存储器阵列（NRAM）中的存储元件和逻辑门的各种应用是有用的。

公开(公告)号：US06683359B2

公开(公告)日：2004-01-27

申请号：US10176002

申请日：2002-06-21

申请人： Mark B. Johnson ,  Gary A. Prinz

发明人： Mark B. Johnson ,  Gary A. Prinz

IPC分类号： H01L2982

CPC分类号： H01L43/065 ,  G11C11/18

摘要： A Hall effect device comprising: (a) an electrically-conductive layer or plate having a top surface: and (b) a ferromagnetic multilayer, where the conductive film or layer is composed of high mobility semiconductors. Also, a Hall effect device can be a device in which the Hall plate comprises an indium compound, germanium or mixtures thereof. The devices are useful for a variety of applications such as a memory element in a nonvolatile random access memory array (NRAM) and as a logic gate.

摘要翻译： 一种霍尔效应装置，包括：（a）具有顶表面的导电层或板;和（b）铁磁多层，其中所述导电膜或层由高迁移率半导体构成。 此外，霍尔效应器件可以是其中霍尔板包括铟化合物，锗或其混合物的器件。 这些设备对于诸如非易失性随机存取存储器阵列（NRAM）中的存储元件和逻辑门的各种应用是有用的。

公开(公告)号：US5025416A

公开(公告)日：1991-06-18

申请号：US360173

申请日：1989-06-01

申请人： Gary A. Prinz

发明人： Gary A. Prinz

IPC分类号： G11C11/14 ,  G11C11/18

CPC分类号： G11C11/18 ,  G11C11/14

摘要： A magnetic memory element is fabricated from a thin magnetic film wherein the magnetic film is grown on a lattice-matched substrate and subsequently patterned to form a closure domain. The closure domain is comprised of a plurality of legs which are joined at domain walls. The individual legs are patterned in the thin magnetic film to lie parallel to an easy axis of the thin film crystal structure being used. Thus, each closure domain represents a magnetic memory element. Fringing fields about the memory elements are eliminated due to the closure domain design. An array of such closure domains can be grown on a substrate and can be packed to high densities up to the limits of current lithographic technology. Such thin film magnetic memory arrays are non-volatile and are compatible with existing RAMs.

摘要翻译： 磁存储元件由薄磁膜制成，其中磁膜在晶格匹配的衬底上生长，随后被图案化以形成封闭畴。 闭合结构域由在畴壁处连接的多个腿构成。 单个腿在薄磁膜中图案化以平行于所使用的薄膜晶体结构的容易轴。 因此，每个闭合域表示磁存储元件。 由于关闭域设计，消除了关于存储器元件的领域。 这样的封闭结构域的阵列可以在衬底上生长，并且可以直至目前的平版印刷技术的极限被包装成高密度。 这种薄膜磁存储阵列是非易失性的并且与现有RAM兼容。

公开(公告)号：US06391483B1

公开(公告)日：2002-05-21

申请号：US09281171

申请日：1999-03-30

申请人： Jian-Gang Zhu ,  Youfeng Zheng ,  Gary A. Prinz

发明人： Jian-Gang Zhu ,  Youfeng Zheng ,  Gary A. Prinz

IPC分类号： G11B566

CPC分类号： H01L27/222 ,  G11C11/16 ,  H01L43/08 ,  Y10S428/90 ,  Y10T428/11 ,  Y10T428/1171

摘要： A device including a magnetic material having a magnetization configuration that is circular in a plane, and a word line for producing a magnetic field in the plane, the magnetic field being radial with respect to a point in the plane and within the circular magnetization configuration.

摘要翻译： 包括具有在平面中为圆形的磁化构造的磁性材料的装置和用于在该平面中产生磁场的字线，该磁场相对于该平面中的一个点和该圆形磁化构型是径向的。

公开(公告)号：US4862119A

公开(公告)日：1989-08-29

申请号：US213042

申请日：1988-06-29

申请人： Clifford M. Krowne ,  Gary A. Prinz ,  James J. Krebs

发明人： Clifford M. Krowne ,  Gary A. Prinz ,  James J. Krebs

IPC分类号： H01P1/36

CPC分类号： H01P1/36

摘要： A semiconductor device useable as an electromagnetic isolator. The device has a semiconductor substrate epitaxial with a layer of metal, the latter deposited so as to generate a residual magnetic flux. A waveguiding structure is disposed transverse to the flux effective to cause electromagnetic signals propagating in the waveguiding structure to be attenuated a different amount depending on the direction of propagation. The waveguiding structure is preferably a seminconductor layer deposited epitaxially with the substrate in a channel in the metal.

摘要翻译： 可用作电磁隔离器的半导体器件。 该器件具有外延金属的半导体衬底，其沉积以产生残余磁通量。 波导结构横跨于磁通设置，有效地使波导结构中传播的电磁信号根据传播方向衰减不同的量。 波导结构优选是在金属中的通道中与衬底外延沉积的半导体层。

公开(公告)号：US06844202B2

公开(公告)日：2005-01-18

申请号：US10226049

申请日：2002-08-23

申请人： Gary A. Prinz ,  Michael M. Miller

发明人： Gary A. Prinz ,  Michael M. Miller

IPC分类号： G01N33/58 ,  G01N15/10 ,  G01N27/72 ,  G01N33/543 ,  G01R33/09 ,  G11C11/15 ,  G01N33/553

CPC分类号： G11C11/15 ,  G01N27/745 ,  G01N33/54326

摘要： A magnetic sensing element detects the presence of magnetic particles in a binding assay. The magnetic sensing element has at least one planar layer of electrically conductive ferromagnetic material that has an initial state in which the material has a circular magnetic moment within the plane of the layer. The magnetic sensing element has molecules of a first specific binding member attached to it. The device also includes a fluid test medium to which the magnetic sensing element is exposed during the course of a binding assay. The fluid test medium includes magnetizable particles that become immobilized during the assay in relation to the amount of analyte in the test medium. The relative size of the magnetic particle and the magnetic sensing element and the location of the molecules of the first specific binding member on the magnetic sensing element are selected so that when the magnetic particle becomes immobilized with respect to the magnetic sensing element, the radial fringing field of the magnetic particle causes the magnetic moment of at least one layer of electrically conductive ferromagnetic material to shift from circular to radial, thereby causing a detectable change in the electrical resistance of the magnetic sensing element.

摘要翻译： 磁感应元件在结合测定中检测磁性颗粒的存在。 磁传感元件具有至少一个导电铁磁材料的平面层，其具有初始状态，其中该材料在该层的平面内具有圆形磁矩。 磁传感元件具有连接到其上的第一特定结合构件的分子。 该装置还包括流体测试介质，磁性感测元件在结合测定过程中暴露于其中。 流体测试介质包括在测定期间相对于测试介质中的分析物的量变得固定的可磁化颗粒。 选择磁性粒子和磁感应元件的相对尺寸以及第一特定结合件在磁感应元件上的分子的位置，使得当磁性颗粒相对于磁敏元件固定时，径向条纹 磁性颗粒的磁场使得至少一层导电铁磁材料的磁矩从圆形向径向移动，从而导致磁感测元件的电阻的可检测变化。

公开(公告)号：US06552554B1

公开(公告)日：2003-04-22

申请号：US10004448

申请日：2001-12-06

申请人： Gary A. Prinz ,  Konrad Bussmann

发明人： Gary A. Prinz ,  Konrad Bussmann

IPC分类号： G01R3126

CPC分类号： G11C11/16 ,  G11C29/006 ,  G11C2029/5006 ,  Y10S977/852

摘要： A wafer suitable to be tested for current-perpendicular to the plane resistance includes a substrate, a conductive base layer on the substrate, a magnetic multilayer on the conductive base layer, and a top conductive layer. A testing ring is formed on the magnetic multilayer in a manner whereby it is separated from rest of the magnetic multilayer by a trench in the magnetic multilayer. Within the testing ring, the magnetic multilayer includes a hole. The current perpendicular to the plane resistance of the wafer may be determined by passing a predetermined current perpendicular through the testing ring by contacting a probe to the testing ring and measuring the voltage at the conductive base layer. The probe used in the present invention may be an AFM or a STM probe.

摘要翻译： 适合于垂直于平面电阻测试的晶片包括衬底，衬底上的导电基底层，导电基底层上的磁性多层，以及顶部导电层。 在磁性多层中形成测试环，其中磁性多层中的沟槽与磁性多层的其余部分分离。 在测试环内，磁性多层包括孔。 垂直于晶片的平面电阻的电流可以通过使探针与测试环接触并测量导电基底层的电压而使预定电流垂直通过测试环来确定。 本发明中使用的探针可以是AFM或STM探针。

公开(公告)号：US06468809B1

公开(公告)日：2002-10-22

申请号：US09497754

申请日：2000-02-04

申请人： Gary A. Prinz ,  Michael M. Miller

发明人： Gary A. Prinz ,  Michael M. Miller

IPC分类号： G01N33553

CPC分类号： G11C11/15 ,  G01N27/745 ,  G01N33/54326

摘要： A magnetic sensing element detects the presence of magnetic particles in a binding assay. The magnetic sensing element has at least one planar layer of electrically conductive ferromagnetic material that has an initial state in which the material has a circular magnetic moment within the plane of the layer. The magnetic sensing element has molecules of a first specific binding member attached to it. The device also includes a fluid test medium to which the magnetic sensing element is exposed during the course of a binding assay. The fluid test medium includes magnetizable particles that become immobilized during the assay in relation to the amount of analyte in the test medium. The relative size of the magnetic particle and the magnetic sensing element and the location of the molecules of the first specific binding member on the magnetic sensing element arc selected so that when the magnetic particle becomes immobilized with respect to the magnetic sensing element, the radial fringing field of the magnetic particle causes the magnetic moment of at least one layer of electrically conductive ferromagnetic material to shift from circular to radial, thereby causing a detectable change in the electrical resistance of the magnetic sensing element.

摘要翻译： 磁感应元件在结合测定中检测磁性颗粒的存在。 磁传感元件具有至少一个导电铁磁材料的平面层，其具有初始状态，其中该材料在该层的平面内具有圆形磁矩。 磁传感元件具有连接到其上的第一特定结合构件的分子。 该装置还包括流体测试介质，磁性感测元件在结合测定过程中暴露于其中。 流体测试介质包括在测定期间相对于测试介质中的分析物的量变得固定的可磁化颗粒。 选择磁性粒子和磁性感测元件的相对尺寸以及磁性感测元件上的第一特定结合构件的分子的位置，使得当磁性颗粒相对于磁敏元件固定时，径向条纹 磁性颗粒的磁场使得至少一层导电铁磁材料的磁矩从圆形向径向移动，从而导致磁感测元件的电阻的可检测变化。

公开(公告)号：US4828935A

公开(公告)日：1989-05-09

申请号：US176115

申请日：1988-03-30

申请人： Berend T. Jonker ,  Gary A. Prinz ,  James J. Krebs

发明人： Berend T. Jonker ,  Gary A. Prinz ,  James J. Krebs

IPC分类号： H01L21/314

CPC分类号： H01L21/314 ,  Y10S438/958 ,  Y10T428/12528 ,  Y10T428/12681

摘要： A passivating or insulating layer is described for semiconductor substrat The passivating layer is of the formula Zn.sub.1-x-y M.sub.x Q.sub.y Se:D where 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, M and Q represent different specified elements and D represents a dopant. It is prefered that M and Q are Fe or Mn. The substrate is preferably a III-V semiconductor compound. The devices are capable of rapid switching among other uses.

摘要翻译： 半导体衬底描述钝化或绝缘层。 钝化层具有式Zn1-x-yMxQySe：D，其中0≤x≤1,0≤y≤1，M和Q表示不同的特定元素，D表示掺杂剂。 M和Q优选为Fe或Mn。 基板优选为III-V族半导体化合物。 这些设备能够在其他用途​​之间快速切换。

公开(公告)号：US06381170B1

公开(公告)日：2002-04-30

申请号：US08430050

申请日：1995-04-27

申请人： Gary A. Prinz

发明人： Gary A. Prinz

IPC分类号： G11C700

CPC分类号： G11C11/16 ,  G11C11/15 ,  H01L27/222 ,  H01L43/12

摘要： A random access memory element utilizes giant magnetoresistance. The element includes at least one pair of ferromagnetic layers sandwiching a nonmagnetic conductive layer. At least one of the two ferromagnetic layers has a magnetic moment oriented within its own plane. The magnetic moment of at least the first ferromagnetic layer of the pair has its magnetic moment oriented within its own plane and is typically fixed in direction during use. The second ferromagnetic layer of the pair has a magnetic moment which has at least two preferred directions of orientation. These preferred directions of orientation may or may not reside within the plane of the second ferromagnetic layer. The bit of the memory element may be set by applying to the element a magnetic field which orients the magnetic moment of the second ferromagnetic layer in one or the other of these preferred orientations. Once the bit is set, the value of the determined by the relative alignment of the magnetic moments of the first and second ferromagnetic layers. This value may be read by applying an interrogating current across the memory element, perpendicular to the plane within which the magnetic moment of the first ferromagnetic layer is oriented, and observing the variation in resistance. These ferromagnetic elements may be fabricated using conventional photolithography. Groups of these ferromagnetic element may be organized into word trees and other arrays.

摘要翻译： 随机存取存储元件利用巨磁电阻。 元件包括夹在非磁性导电层中的至少一对铁磁层。 两个铁磁层中的至少一个具有定向在其自身平面内的磁矩。 该对的至少第一铁磁层的磁矩的磁矩在其自身的平面内定向，并且通常在使用期间被固定在方向上。 该对的第二铁磁层具有至少两个优选取向方向的磁矩。 这些优选的取向方向可以或不在第二铁磁层的平面内。 可以通过向元件施加磁场来设置存储元件的位，该磁场定向这些优选取向中的一个或另一个中的第二铁磁层的磁矩。 一旦该位被置位，则通过第一和第二铁磁层的磁矩的相对对准确定的值。 可以通过在存储元件上施加询问电流来读取该值，垂直于第一铁磁层的磁矩定向的平面并观察电阻的变化。 这些铁磁元件可以使用常规光刻制造。 这些铁磁元件的组可以被组织成字树和其他阵列。