Content service aggregation device for a data center
    6.
    发明授权
    Content service aggregation device for a data center 有权
    数据中心的内容服务聚合设备

    公开(公告)号:US07363353B2

    公开(公告)日:2008-04-22

    申请号:US10191746

    申请日:2002-07-08

    IPC分类号: G06F15/16

    摘要: An architecture for controlling a multiprocessing system to provide at least one network service to subscriber data packets transmitted in the system using a plurality of compute elements, comprising a management compute element including service set-up information for at least one service and at least one processing compute element applying said at least one network service to said data packets and communicating service set-up information with the management compute element in order to perform service specific operations on data packets. In a further embodiment, a method of controlling a processing system including a plurality of processors is disclosed. The method comprises the steps of operating at least one of said processors as a control authority providing service provisioning information for a subscriber; and operating a set of processors as a service specific compute element responsive to the control authority, receiving provisioning information from the subscriber and performing service specific instructions on data packets to provide IP content services.

    摘要翻译: 一种用于控制多处理系统以使用多个计算元件在系统中发送的订户数据分组提供至少一个网络服务的架构,包括管理计算单元,其包括用于至少一个服务的服务建立信息和至少一个处理 计算元件将所述至少一个网络服务应用于所述数据分组,并与所述管理计算单元通信服务建立信息,以便对数据分组执行服务特定操作。 在另一实施例中,公开了一种控制包括多个处理器的处理系统的方法。 该方法包括以下步骤:操作至少一个所述处理器作为向用户提供服务提供信息的控制权限; 以及响应于所述控制权限,将一组处理器作为特定于服务的计算单元进行操作,从所述订户接收供应信息,并对数据分组执行服务特定指令以提供IP内容服务。

    Packet queuing, scheduling and ordering
    9.
    发明申请
    Packet queuing, scheduling and ordering 有权
    分组排队,调度和排序

    公开(公告)号:US20060056406A1

    公开(公告)日:2006-03-16

    申请号:US11005490

    申请日:2004-12-06

    IPC分类号: H04L12/56

    摘要: A method and apparatus for ordering, synchronizing and scheduling work in a multi-core network services processor is provided. Each piece of work is identified by a tag that indicates how the work is to be synchronized and ordered. Throughput is increased by processing work having different tags in parallel on different processor cores. Packet processing can be broken up into different phases, each phase having a different tag dependent on ordering and synchronization constraints for the phase. A tag switch operation initiated by a core switches a tag dependent on the phase. A dedicated tag switch bus minimizes latency for the tag switch operation.

    摘要翻译: 提供了一种用于在多核网络服务处理器中排序,同步和调度工作的方法和装置。 每个工作都由一个标签标识,该标签指示工作如何同步和排序。 通过在不同的处理器核心上并行处理具有不同标签的工作来增加吞吐量。 分组处理可以分解成不同的阶段,每个阶段具有取决于阶段的排序和同步约束的不同标签。 由核心发起的标签交换操作根据相位切换标签。 专用标签交换总线最大限度地减少了标签交换操作的延迟。

    Hydrogen-Blocking Film for Ferroelectric Capacitors
    10.
    发明申请
    Hydrogen-Blocking Film for Ferroelectric Capacitors 审中-公开
    用于铁电电容器的氢封闭膜

    公开(公告)号:US20130056811A1

    公开(公告)日:2013-03-07

    申请号:US13432736

    申请日:2012-03-28

    IPC分类号: H01L21/02 H01L27/06 H01L29/92

    摘要: An ammonia-free method of depositing silicon nitride by way of plasma-enhanced chemical vapor deposition (PECVD). Source gases of silane (SiH4) and nitrogen (N2) are provided to a parallel-plate plasma reactor, in which energy is capacitively coupled to the plasma, and in which the wafer being processed has been placed at a support electrode. Low-frequency RF energy (e.g., 360 kHz) is applied to the support electrode; high-frequency RF energy (e.g., 13.56 MHz) is optionally provided to the parallel electrode. Process temperature is above 350° C., at a pressure of about 2.5 torr. Any hydrogen present in the resulting silicon nitride film is bound by N—H bonds rather than Si—H bonds, and is thus more strongly bound to the film. The silicon nitride can serve as passivation for ferroelectric material that may degrade electrically if contaminated by hydrogen.

    摘要翻译: 通过等离子体增强化学气相沉积(PECVD)沉积氮化硅的无氨方法。 将硅烷(SiH4)和氮(N2)的源气体提供给平行板等离子体反应器,其中能量电容耦合到等离子体,并且其中待处理的晶片已经被放置在支撑电极处。 将低频RF能量(例如,360kHz)施加到支撑电极; 可选地,将高频RF能量(例如,13.56MHz)提供给并联电极。 工艺温度高于350℃,压力约为2.5托。 存在于所得氮化硅膜中的任何氢由N-H键而不是Si-H键结合,因此与膜更牢固地结合。 氮化硅可用作铁电材料的钝化剂,如果被氢气污染,则可能会电解。