公开(公告)号：US06518705B2

公开(公告)日：2003-02-11

申请号：US10033807

申请日：2001-12-18

申请人： Mark H. Wilcoxson ,  Andrew D. Bailey, III ,  Andras Kuthi ,  Michael G. R. Smith ,  Alan M. Schoepp

发明人： Mark H. Wilcoxson ,  Andrew D. Bailey, III ,  Andras Kuthi ,  Michael G. R. Smith ,  Alan M. Schoepp

IPC分类号： H01J724

CPC分类号： H01J37/321 ,  H01J37/32467

摘要： An antenna arrangement for generating an electric field inside a process chamber is provided. Generally, the antenna arrangement comprises a first loop disposed around an antenna axis. The first loop comprises a first turn with a first turn gap; a second turn with a second turn gap, where the second turn is concentric and coplanar with the first turn and spaced apart from the first turn, and where the antenna axis passes through the center of the first turn and second turn; and a first turn-second turn connector electrically connected between a second end of the first turn and a first end of the second turn comprising a spanning section between and coplanar with the first turn and the second turn and which spans the first turn gap and the second turn gap.

公开(公告)号：US06341574B1

公开(公告)日：2002-01-29

申请号：US09439661

申请日：1999-11-15

申请人： Andrew D. Bailey, III ,  Alan M. Schoepp ,  David J. Hemker ,  Mark H. Wilcoxson ,  Andras Kuthi

发明人： Andrew D. Bailey, III ,  Alan M. Schoepp ,  David J. Hemker ,  Mark H. Wilcoxson ,  Andras Kuthi

IPC分类号： C23C1600

CPC分类号： H01J37/32623 ,  H01J37/3266

摘要： A plasma processing system for processing a substrate which includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing system includes a coupling window disposed at an upper end of the plasma processing chamber and an RF antenna arrangement disposed above a plane defined by the substrate when the substrate is disposed within the plasma processing chamber for the processing. The plasma processing system also includes an electromagnet arrangement disposed above the plane defined by the substrate. The electromagnet arrangement is configured so as to result in a radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the coupling window and antenna when at least one direct current is supplied to the electromagnet arrangement. The radial variation is effective to affect processing uniformity across the substrate. The plasma processing system additionally includes a dc power supply coupled to the electromagnet arrangement. The dc power supply has a controller to vary a magnitude of at least one direct current, thereby changing the radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the antenna to improve the processing uniformity across the substrate.

摘要翻译： 一种用于处理衬底的等离子体处理系统，其包括单室，基本方位对称的等离子体处理室，其中等离子体都被点燃并持续进行处理。 等离子体处理室没有单独的等离子体产生室。 等离子体处理室具有上端和下端。 等离子体处理系统包括设置在等离子体处理室的上端的耦合窗口和当衬底设置在等离子体处理室内用于处理时设置在由衬底限定的平面上方的RF天线布置。 等离子体处理系统还包括设置在由衬底限定的平面之上的电磁体装置。 当至少一个直流电被提供给电磁体装置时，电磁体装置构造成导致等离子体处理室内的可耦合窗口和天线附近的区域内的可控磁场的径向变化。 径向变化对影响衬底上的加工均匀性是有效的。 等离子体处理系统还包括耦合到电磁体装置的直流电源。 直流电源具有控制器来改变至少一个直流电流的大小，从而改变等离子体处理室内靠近天线的可控磁场中的径向变化，以改善穿过衬底的加工均匀性。

公开(公告)号：US06302966B1

公开(公告)日：2001-10-16

申请号：US09439675

申请日：1999-11-15

申请人： Andrew D. Bailey, III ,  Alan M. Schoepp ,  Michael G. R. Smith ,  Andras Kuthi

发明人： Andrew D. Bailey, III ,  Alan M. Schoepp ,  Michael G. R. Smith ,  Andras Kuthi

IPC分类号： C23C1646

CPC分类号： H01J37/32522

摘要： A plasma processing system that includes a temperature management system and method that can achieve very accurate temperature control over a plasma processing apparatus is disclosed. In one embodiment, the temperature management system and method operate to achieve tight temperature control over surfaces of the plasma processing apparatus which interact with the plasma during fabrication of semiconductor devices. The tight temperature control offered by the invention can be implemented with combination heating and cooling blocks such that both heating and cooling can be provided from the same thermal interface.

摘要翻译： 公开了一种等离子体处理系统，其包括能够对等离子体处理装置实现非常精确的温度控制的温度管理系统和方法。 在一个实施例中，温度管理系统和方法用于在半导体器件的制造期间实现与等离子体相互作用的等离子体处理装置的表面的紧密温度控制。 本发明提供的严格的温度控制可以通过组合加热和冷却块实现，使得可以从相同的热界面提供加热和冷却。

公开(公告)号：US07858898B2

公开(公告)日：2010-12-28

申请号：US11698191

申请日：2007-01-26

申请人： Andrew D. Bailey, III ,  Alan M. Schoepp ,  Gregory Sexton ,  Andras Kuthi ,  Yunsang Kim ,  William S. Kennedy

发明人： Andrew D. Bailey, III ,  Alan M. Schoepp ,  Gregory Sexton ,  Andras Kuthi ,  Yunsang Kim ,  William S. Kennedy

IPC分类号： B23K10/00

CPC分类号： H01L21/0209 ,  H01J37/32366 ,  H01J37/32568 ,  H01J2237/335 ,  H01L21/67069

摘要： A device for cleaning a bevel edge of a semiconductor substrate. The device includes a lower electrode assembly that has a top surface and is adapted to support the substrate and an upper electrode assembly that has a bottom surface opposing the top surface. The lower and upper electrode assemblies generate plasma for cleaning the bevel edge of the substrate disposed between the top and bottom surfaces during operation. The device also includes a mechanism for suspending the upper electrode assembly over the lower support and adjusting the tilt angle and horizontal translation of the bottom surface relative to the top surface.

摘要翻译： 一种用于清洁半导体衬底的斜边缘的装置。 该装置包括具有顶表面并适于支撑基底的下电极组件和具有与顶表面相对的底表面的上电极组件。 下部和上部电极组件在操作期间产生用于清洁设置在顶部和底部表面之间的衬底的斜面边缘的等离子体。 该装置还包括用于将上电极组件悬挂在下支撑件上并且调节底表面相对于顶表面的倾斜角度和水平平移的机构。

公开(公告)号：US06653791B1

公开(公告)日：2003-11-25

申请号：US09977569

申请日：2001-10-12

申请人： Andrew D. Bailey, III ,  Alan M. Schoepp ,  Andras Kuthi

发明人： Andrew D. Bailey, III ,  Alan M. Schoepp ,  Andras Kuthi

IPC分类号： H01J724

CPC分类号： H01J37/32467 ,  H01J37/321

摘要： A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF power source and disposed above a plane defined by the substrate when the substrate is disposed within the process chamber for processing. The substantially circular antenna being configured to induce an electric field inside the process chamber with a first RF energy generated by the first RF power source. The substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane. The first pair of concentric loops and the second pair of concentric loops being substantially identical and symmetrically aligned with one another. The substantially circular antenna forming an azimuthally symmetric plasma inside the process chamber. The apparatus also includes a coupling window disposed between the antenna and the process chamber. The coupling window being configured to allow the passage of the first RF energy from the antenna to the interior of the process chamber. The coupling window having a first layer and a second layer. The second layer being configured to substantially suppress the capacitive coupling formed between the substantially circular antenna and the plasma. The substantially circular antenna and the coupling window working together to produce a substantially uniform process rate across the surface of the substrate.

摘要翻译： 公开了一种用等离子体处理衬底的等离子体处理装置。 该装置包括具有第一RF频率的第一RF电源和处理室。 此外，该设备包括可操作地耦合到第一RF电源并且当基板设置在处理室内以进行处理时设置在由基板限定的平面之上的基本圆形的天线。 基本上圆形的天线被配置为利用由第一RF电源产生的第一RF能量来诱导处理室内的电场。 基本上圆形的天线包括第一平面中的至少第一对同心环和在第二平面中的第二对同心环。 第一对同心环和第二对同心环彼此基本相同和对称地对准。 大致圆形天线在处理室内形成方位对称等离子体。 该装置还包括设置在天线和处理室之间的耦合窗口。 耦合窗口被配置为允许第一RF能量从天线通过到处理室的内部。 耦合窗具有第一层和第二层。 第二层被配置为基本上抑制形成在基本上圆形的天线和等离子体之间的电容耦合。 基本上圆形的天线和耦合窗口一起工作，以在衬底的表面上产生基本均匀的工艺速率。

公开(公告)号：US06320320B1

公开(公告)日：2001-11-20

申请号：US09440418

申请日：1999-11-15

申请人： Andrew D. Bailey, III ,  Alan M. Schoepp ,  Andras Kuthi

发明人： Andrew D. Bailey, III ,  Alan M. Schoepp ,  Andras Kuthi

IPC分类号： H01J724

CPC分类号： H01J37/32467 ,  H01J37/321

摘要： A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF power source and disposed above a plane defined by the substrate when the substrate is disposed within the process chamber for processing. The substantially circular antenna being configured to induce an electric field inside the process chamber with a first RF energy generated by the first RF power source. The substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane. The first pair of concentric loops and the second pair of concentric loops being substantially identical and symmetrically aligned with one another. The substantially circular antenna forming an azimuthally symmetric plasma inside the process chamber. The apparatus also includes a coupling window disposed between the antenna and the process chamber. The coupling window being configured to allow the passage of the first RF energy from the antenna to the interior of the process chamber. The coupling window having a first layer and a second layer. The second layer being configured to substantially suppress the capacitive coupling formed between the substantially circular antenna and the plasma. The substantially circular antenna and the coupling window working together to produce a substantially uniform process rate across the surface of the substrate.

摘要翻译： 公开了一种用等离子体处理衬底的等离子体处理装置。 该装置包括具有第一RF频率的第一RF电源和处理室。 此外，该设备包括可操作地耦合到第一RF电源并且当基板设置在处理室内以进行处理时设置在由基板限定的平面之上的基本圆形的天线。 基本上圆形的天线被配置为利用由第一RF电源产生的第一RF能量来诱导处理室内的电场。 基本上圆形的天线包括第一平面中的至少第一对同心环和在第二平面中的第二对同心环。 第一对同心环和第二对同心环彼此基本相同和对称地对准。 大致圆形天线在处理室内形成方位对称等离子体。 该装置还包括设置在天线和处理室之间的耦合窗口。 耦合窗口被配置为允许第一RF能量从天线通过到处理室的内部。 耦合窗具有第一层和第二层。 第二层被配置为基本上抑制形成在基本上圆形的天线和等离子体之间的电容耦合。 基本上圆形的天线和耦合窗口一起工作，以在衬底的表面上产生基本均匀的工艺速率。

公开(公告)号：US06322661B1

公开(公告)日：2001-11-27

申请号：US09439759

申请日：1999-11-15

申请人： Andrew D. Bailey, III ,  Alan M. Schoepp ,  Nicolas Bright

发明人： Andrew D. Bailey, III ,  Alan M. Schoepp ,  Nicolas Bright

IPC分类号： H05H100

CPC分类号： H01J37/32623 ,  H01J37/32688

摘要： A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber using a plasma enhanced process is disclosed. The arrangement includes a first magnetic bucket having a plurality of first magnetic elements. The first magnetic elements being configured for producing a first magnetic field inside the process chamber. The arrangement further includes a second magnetic bucket having a plurality of second magnetic elements. The second magnetic elements being configured for producing a second magnetic field inside the process chamber. The second magnetic field being configured to combine with the first magnetic field to produce a resultant magnetic field between the first magnetic bucket and the second magnetic bucket. The resultant magnetic field being configured to permit by-product gas from the processing to pass through while substantially confining the plasma within a volume defined at least by the process chamber and the resultant magnetic field.

摘要翻译： 公开了一种等离子体限制装置，用于在使用等离子体增强过程处理处理室内的衬底的同时控制等离子体的体积。 该装置包括具有多个第一磁性元件的第一磁性桶。 第一磁性元件被配置用于在处理室内产生第一磁场。 该装置还包括具有多个第二磁性元件的第二磁性桶。 第二磁性元件构造成用于在处理室内产生第二磁场。 第二磁场被配置为与第一磁场组合以在第一磁性铲斗和第二磁性铲斗之间产生合成的磁场。 所得到的磁场被配置为允许来自处理的副产物气体通过，同时基本上将等离子体限制在至少由处理室限定的体积和所得的磁场中。

公开(公告)号：US08398875B2

公开(公告)日：2013-03-19

申请号：US13047735

申请日：2011-03-14

申请人： Gregory S. Sexton ,  Andrew D. Bailey, III ,  Alan M. Schoepp ,  John D. Boniface

发明人： Gregory S. Sexton ,  Andrew D. Bailey, III ,  Alan M. Schoepp ,  John D. Boniface

IPC分类号： B44C1/22

CPC分类号： H01L21/67069 ,  H01J37/32568

摘要： Methods for orienting an upper electrode relative to a lower electrode are provided. The lower electrode is configured to have a desired existing orientation in a process chamber to define active and inactive process zones in the process chamber for processing a wafer. The method includes configuring each electrode with a reference surface, where a lower electrode reference surface is in the desired existing orientation and an upper electrode reference surface to be oriented parallel to the lower electrode reference surface. Then, temporarily holding the upper electrode reference surface oriented parallel to the lower electrode reference surface, and securing the upper electrode to a drive to mount the upper electrode reference surface parallel to the lower electrode reference surface. Other method configurations are also disclosed and illustrated.

摘要翻译： 提供了用于使上电极相对于下电极定向的方法。 下电极被配置为在处理室中具有期望的现有取向，以在处理室中限定用于处理晶片的有源和非活性工艺区。 该方法包括用参考表面配置每个电极，其中下电极参考表面处于所需的现有取向，并且上电极参考表面被平行于下电极参考表面定向。 然后，暂时保持与上部电极基准面平行的上部电极基准面，并将该上部电极固定在与上述电极基准面平行的驱动器上。 还公开和示出了其它方法构造。

公开(公告)号：US07922866B2

公开(公告)日：2011-04-12

申请号：US12647301

申请日：2009-12-24

申请人： Gregory S. Sexton ,  Andrew D. Bailey, III ,  Alan M. Schoepp ,  John D. Boniface

发明人： Gregory S. Sexton ,  Andrew D. Bailey, III ,  Alan M. Schoepp ,  John D. Boniface

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： H01L21/67069 ,  H01J37/32568

摘要： Positional relationships are established in a process chamber. A base is configured with a lower electrode surface to support a wafer, and an upper electrode has a lower surface. A drive mounted on the base has a linkage connected to the upper electrode. A fixture placed on the lower surface moves into a desired orientation of the lower electrode. With the upper electrode loosely connected by the linkage to the drive, the fixture transfers the desired orientation to the upper electrode. The linkage is tightened to maintain the desired orientation, the fixture is removed and a process exclusion insert is mounted to the upper electrode. The drive moves the upper electrode and the insert to define an inactive process zone between the upper electrode and the wafer on the lower electrode to protect a central area of the wafer during etching of a wafer edge environ around the central area.

摘要翻译： 位置关系建立在一个过程室中。 基底配置有下电极表面以支撑晶片，并且上电极具有下表面。 安装在基座上的驱动器具有连接到上电极的连杆。 放置在下表面上的固定器移动到下电极的期望取向。 通过与驱动器的联动松动地连接上电极，固定装置将期望的方向传送到上电极。 连接件被拧紧以保持所需的取向，夹具被移除，并且将过程排除插入件安装到上电极。 驱动器移动上电极和插入件以在下电极上的上电极和晶片之间限定非活动的工艺区域，以在蚀刻围绕中心区域的晶片边缘环境时保护晶片的中心区域。

公开(公告)号：US07662254B2

公开(公告)日：2010-02-16

申请号：US11704870

申请日：2007-02-08

申请人： Gregory S. Sexton ,  Andrew D. Bailey, III ,  Alan M. Schoepp ,  John D. Boniface

发明人： Gregory S. Sexton ,  Andrew D. Bailey, III ,  Alan M. Schoepp ,  John D. Boniface

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01L21/67069 ,  H01J37/32568

摘要： Positional relationships are established in a process chamber. A base is configured with a lower electrode surface to support a wafer, and an upper electrode has a lower surface. A drive mounted on the base has a linkage connected to the upper electrode. A fixture placed on the lower surface moves into a desired orientation of the lower electrode. With the upper electrode loosely connected by the linkage to the drive, the fixture transfers the desired orientation to the upper electrode. The linkage is tightened to maintain the desired orientation, the fixture is removed and a process exclusion insert is mounted to the upper electrode. The drive moves the upper electrode and the insert to define an inactive process zone between the upper electrode and the wafer on the lower electrode to protect a central area of the wafer during etching of a wafer edge environ around the central area.

摘要翻译： 位置关系建立在一个过程室中。 基底配置有下电极表面以支撑晶片，并且上电极具有下表面。 安装在基座上的驱动器具有连接到上电极的连杆。 放置在下表面上的固定器移动到下电极的期望取向。 通过与驱动器的联动松动地连接上电极，固定装置将期望的方向传送到上电极。 连接件被拧紧以保持所需的取向，夹具被移除，并且将过程排除插入件安装到上电极。 驱动器移动上电极和插入件以在下电极上的上电极和晶片之间限定非活动的工艺区域，以在蚀刻围绕中心区域的晶片边缘环境时保护晶片的中心区域。