Substrate proximity processing housing and insert for generating a fluid meniscus
    1.
    发明授权
    Substrate proximity processing housing and insert for generating a fluid meniscus 有权
    基板接近处理壳体和用于产生流体弯液面的插入件

    公开(公告)号:US07293571B2

    公开(公告)日:2007-11-13

    申请号:US10817355

    申请日:2004-04-01

    IPC分类号: B08B3/00

    摘要: An apparatus for generating a fluid meniscus to be formed on a surface of a substrate is provided including a housing where the housing includes a housing surface to be placed proximate to a substrate surface of the substrate. The housing further includes a process configuration receiving region that is surrounded by the housing surface. The apparatus also includes a process configuration insert which has an insert surface where the process configuration insert is defined to fit within the process configuration receiving region of the housing such that the insert surface and the housing surface define a proximity face that can be placed proximate to the substrate surface of the substrate.

    摘要翻译: 提供了一种用于产生要形成在基板的表面上的流体弯液面的装置,其包括壳体,其中壳体包括靠近基板的基板表面放置的壳体表面。 壳体还包括由壳体表面包围的过程配置接收区域。 该设备还包括具有插入表面的过程配置插入件,其中该过程配置插入件被限定为适合于壳体的过程配置接收区域内,使得插入表面和壳体表面限定可以靠近 衬底的衬底表面。

    Temperature control system for plasma processing apparatus
    3.
    发明授权
    Temperature control system for plasma processing apparatus 有权
    等离子体处理装置的温度控制系统

    公开(公告)号:US06302966B1

    公开(公告)日:2001-10-16

    申请号:US09439675

    申请日:1999-11-15

    IPC分类号: C23C1646

    CPC分类号: H01J37/32522

    摘要: A plasma processing system that includes a temperature management system and method that can achieve very accurate temperature control over a plasma processing apparatus is disclosed. In one embodiment, the temperature management system and method operate to achieve tight temperature control over surfaces of the plasma processing apparatus which interact with the plasma during fabrication of semiconductor devices. The tight temperature control offered by the invention can be implemented with combination heating and cooling blocks such that both heating and cooling can be provided from the same thermal interface.

    摘要翻译: 公开了一种等离子体处理系统,其包括能够对等离子体处理装置实现非常精确的温度控制的温度管理系统和方法。 在一个实施例中,温度管理系统和方法用于在半导体器件的制造期间实现与等离子体相互作用的等离子体处理装置的表面的紧密温度控制。 本发明提供的严格的温度控制可以通过组合加热和冷却块实现,使得可以从相同的热界面提供加热和冷却。

    Substrate proximity processing structures
    7.
    发明授权
    Substrate proximity processing structures 失效
    基板接近处理结构

    公开(公告)号:US07406972B2

    公开(公告)日:2008-08-05

    申请号:US11903289

    申请日:2007-09-21

    IPC分类号: B08B3/00

    摘要: An apparatus for generating a fluid meniscus to process a substrate is provided. The apparatus includes a manifold head with a manifold surface having a plurality of conduits configured to generate a fluid meniscus on a substrate surface when positioned proximate the substrate. The manifold head has a plurality of passages capable of communicating fluids with the plurality of conduits. The apparatus also includes an interface membrane attached to a portion of the manifold head. The interface membrane is configured to block a portion of the plurality of conduits during operation.

    摘要翻译: 提供了一种用于产生流体弯液面以处理衬底的装置。 该装置包括具有歧管表面的歧管头,歧管表面具有多个导管,其被配置成当定位在衬底附近时在衬底表面上产生流体弯液面。 歧管头部具有能够与多个管道连通的多个通道。 该装置还包括附接到歧管头部的一部分的界面膜。 界面膜构造成在操作期间阻挡多个管道的一部分。