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公开(公告)号：US06302966B1
公开(公告)日：2001-10-16
申请号：US09439675
申请日：1999-11-15
IPC分类号： C23C1646
CPC分类号： H01J37/32522
摘要： A plasma processing system that includes a temperature management system and method that can achieve very accurate temperature control over a plasma processing apparatus is disclosed. In one embodiment, the temperature management system and method operate to achieve tight temperature control over surfaces of the plasma processing apparatus which interact with the plasma during fabrication of semiconductor devices. The tight temperature control offered by the invention can be implemented with combination heating and cooling blocks such that both heating and cooling can be provided from the same thermal interface.
摘要翻译： 公开了一种等离子体处理系统，其包括能够对等离子体处理装置实现非常精确的温度控制的温度管理系统和方法。 在一个实施例中，温度管理系统和方法用于在半导体器件的制造期间实现与等离子体相互作用的等离子体处理装置的表面的紧密温度控制。 本发明提供的严格的温度控制可以通过组合加热和冷却块实现，使得可以从相同的热界面提供加热和冷却。
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公开(公告)号：US06518705B2
公开(公告)日：2003-02-11
申请号：US10033807
申请日：2001-12-18
申请人： Mark H. Wilcoxson , Andrew D. Bailey, III , Andras Kuthi , Michael G. R. Smith , Alan M. Schoepp
发明人： Mark H. Wilcoxson , Andrew D. Bailey, III , Andras Kuthi , Michael G. R. Smith , Alan M. Schoepp
IPC分类号： H01J724
CPC分类号： H01J37/321 , H01J37/32467
摘要： An antenna arrangement for generating an electric field inside a process chamber is provided. Generally, the antenna arrangement comprises a first loop disposed around an antenna axis. The first loop comprises a first turn with a first turn gap; a second turn with a second turn gap, where the second turn is concentric and coplanar with the first turn and spaced apart from the first turn, and where the antenna axis passes through the center of the first turn and second turn; and a first turn-second turn connector electrically connected between a second end of the first turn and a first end of the second turn comprising a spanning section between and coplanar with the first turn and the second turn and which spans the first turn gap and the second turn gap.
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公开(公告)号：US07858898B2
公开(公告)日：2010-12-28
申请号：US11698191
申请日：2007-01-26
申请人： Andrew D. Bailey, III , Alan M. Schoepp , Gregory Sexton , Andras Kuthi , Yunsang Kim , William S. Kennedy
发明人： Andrew D. Bailey, III , Alan M. Schoepp , Gregory Sexton , Andras Kuthi , Yunsang Kim , William S. Kennedy
IPC分类号： B23K10/00
CPC分类号： H01L21/0209 , H01J37/32366 , H01J37/32568 , H01J2237/335 , H01L21/67069
摘要： A device for cleaning a bevel edge of a semiconductor substrate. The device includes a lower electrode assembly that has a top surface and is adapted to support the substrate and an upper electrode assembly that has a bottom surface opposing the top surface. The lower and upper electrode assemblies generate plasma for cleaning the bevel edge of the substrate disposed between the top and bottom surfaces during operation. The device also includes a mechanism for suspending the upper electrode assembly over the lower support and adjusting the tilt angle and horizontal translation of the bottom surface relative to the top surface.
摘要翻译： 一种用于清洁半导体衬底的斜边缘的装置。 该装置包括具有顶表面并适于支撑基底的下电极组件和具有与顶表面相对的底表面的上电极组件。 下部和上部电极组件在操作期间产生用于清洁设置在顶部和底部表面之间的衬底的斜面边缘的等离子体。 该装置还包括用于将上电极组件悬挂在下支撑件上并且调节底表面相对于顶表面的倾斜角度和水平平移的机构。
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公开(公告)号：US06653791B1
公开(公告)日：2003-11-25
申请号：US09977569
申请日：2001-10-12
IPC分类号： H01J724
CPC分类号： H01J37/32467 , H01J37/321
摘要： A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF power source and disposed above a plane defined by the substrate when the substrate is disposed within the process chamber for processing. The substantially circular antenna being configured to induce an electric field inside the process chamber with a first RF energy generated by the first RF power source. The substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane. The first pair of concentric loops and the second pair of concentric loops being substantially identical and symmetrically aligned with one another. The substantially circular antenna forming an azimuthally symmetric plasma inside the process chamber. The apparatus also includes a coupling window disposed between the antenna and the process chamber. The coupling window being configured to allow the passage of the first RF energy from the antenna to the interior of the process chamber. The coupling window having a first layer and a second layer. The second layer being configured to substantially suppress the capacitive coupling formed between the substantially circular antenna and the plasma. The substantially circular antenna and the coupling window working together to produce a substantially uniform process rate across the surface of the substrate.
摘要翻译： 公开了一种用等离子体处理衬底的等离子体处理装置。 该装置包括具有第一RF频率的第一RF电源和处理室。 此外，该设备包括可操作地耦合到第一RF电源并且当基板设置在处理室内以进行处理时设置在由基板限定的平面之上的基本圆形的天线。 基本上圆形的天线被配置为利用由第一RF电源产生的第一RF能量来诱导处理室内的电场。 基本上圆形的天线包括第一平面中的至少第一对同心环和在第二平面中的第二对同心环。 第一对同心环和第二对同心环彼此基本相同和对称地对准。 大致圆形天线在处理室内形成方位对称等离子体。 该装置还包括设置在天线和处理室之间的耦合窗口。 耦合窗口被配置为允许第一RF能量从天线通过到处理室的内部。 耦合窗具有第一层和第二层。 第二层被配置为基本上抑制形成在基本上圆形的天线和等离子体之间的电容耦合。 基本上圆形的天线和耦合窗口一起工作，以在衬底的表面上产生基本均匀的工艺速率。
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公开(公告)号：US06341574B1
公开(公告)日：2002-01-29
申请号：US09439661
申请日：1999-11-15
IPC分类号： C23C1600
CPC分类号： H01J37/32623 , H01J37/3266
摘要： A plasma processing system for processing a substrate which includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing system includes a coupling window disposed at an upper end of the plasma processing chamber and an RF antenna arrangement disposed above a plane defined by the substrate when the substrate is disposed within the plasma processing chamber for the processing. The plasma processing system also includes an electromagnet arrangement disposed above the plane defined by the substrate. The electromagnet arrangement is configured so as to result in a radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the coupling window and antenna when at least one direct current is supplied to the electromagnet arrangement. The radial variation is effective to affect processing uniformity across the substrate. The plasma processing system additionally includes a dc power supply coupled to the electromagnet arrangement. The dc power supply has a controller to vary a magnitude of at least one direct current, thereby changing the radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the antenna to improve the processing uniformity across the substrate.
摘要翻译： 一种用于处理衬底的等离子体处理系统，其包括单室，基本方位对称的等离子体处理室，其中等离子体都被点燃并持续进行处理。 等离子体处理室没有单独的等离子体产生室。 等离子体处理室具有上端和下端。 等离子体处理系统包括设置在等离子体处理室的上端的耦合窗口和当衬底设置在等离子体处理室内用于处理时设置在由衬底限定的平面上方的RF天线布置。 等离子体处理系统还包括设置在由衬底限定的平面之上的电磁体装置。 当至少一个直流电被提供给电磁体装置时，电磁体装置构造成导致等离子体处理室内的可耦合窗口和天线附近的区域内的可控磁场的径向变化。 径向变化对影响衬底上的加工均匀性是有效的。 等离子体处理系统还包括耦合到电磁体装置的直流电源。 直流电源具有控制器来改变至少一个直流电流的大小，从而改变等离子体处理室内靠近天线的可控磁场中的径向变化，以改善穿过衬底的加工均匀性。
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公开(公告)号：US06320320B1
公开(公告)日：2001-11-20
申请号：US09440418
申请日：1999-11-15
IPC分类号： H01J724
CPC分类号： H01J37/32467 , H01J37/321
摘要： A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF power source and disposed above a plane defined by the substrate when the substrate is disposed within the process chamber for processing. The substantially circular antenna being configured to induce an electric field inside the process chamber with a first RF energy generated by the first RF power source. The substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane. The first pair of concentric loops and the second pair of concentric loops being substantially identical and symmetrically aligned with one another. The substantially circular antenna forming an azimuthally symmetric plasma inside the process chamber. The apparatus also includes a coupling window disposed between the antenna and the process chamber. The coupling window being configured to allow the passage of the first RF energy from the antenna to the interior of the process chamber. The coupling window having a first layer and a second layer. The second layer being configured to substantially suppress the capacitive coupling formed between the substantially circular antenna and the plasma. The substantially circular antenna and the coupling window working together to produce a substantially uniform process rate across the surface of the substrate.
摘要翻译： 公开了一种用等离子体处理衬底的等离子体处理装置。 该装置包括具有第一RF频率的第一RF电源和处理室。 此外，该设备包括可操作地耦合到第一RF电源并且当基板设置在处理室内以进行处理时设置在由基板限定的平面之上的基本圆形的天线。 基本上圆形的天线被配置为利用由第一RF电源产生的第一RF能量来诱导处理室内的电场。 基本上圆形的天线包括第一平面中的至少第一对同心环和在第二平面中的第二对同心环。 第一对同心环和第二对同心环彼此基本相同和对称地对准。 大致圆形天线在处理室内形成方位对称等离子体。 该装置还包括设置在天线和处理室之间的耦合窗口。 耦合窗口被配置为允许第一RF能量从天线通过到处理室的内部。 耦合窗具有第一层和第二层。 第二层被配置为基本上抑制形成在基本上圆形的天线和等离子体之间的电容耦合。 基本上圆形的天线和耦合窗口一起工作，以在衬底的表面上产生基本均匀的工艺速率。
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公开(公告)号：US08252140B2
公开(公告)日：2012-08-28
申请号：US13084849
申请日：2011-04-12
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/02087 , B08B7/0035 , H01J37/32091 , H01J37/32174 , H01J37/32541 , H01L21/67069
摘要： The embodiments provide structures and mechanisms for removal of etch byproducts, dielectric films and metal films on and near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In one example, a chamber for wafer bevel edge cleaning is provided. The chamber includes a bottom electrode having a bottom electrode surface for supporting the wafer when present. Also included is a top edge electrode surrounding an insulating plate. The insulator plate is opposing the bottom electrode. The top edge electrode is electrically grounded and has a down-facing L shape. Further included in the chamber is a bottom edge electrode that is electrically grounded and spaced apart from the bottom electrode. The bottom edge electrode is disposed to encircle the bottom electrode. The bottom edge electrode is oriented to oppose the down-facing L shape of the top edge electrode.
摘要翻译： 这些实施例提供用于去除基板斜边缘上和附近的蚀刻副产物，电介质膜和金属膜的结构和机构，以及室内，以避免聚合物副产物和沉积膜的积聚并提高工艺产率。 在一个示例中，提供了用于晶片斜面边缘清洁的室。 该室包括底部电极，其具有用于在存在时支撑晶片的底部电极表面。 还包括围绕绝缘板的顶边电极。 绝缘板与底部电极相对。 顶边电极电接地并具有向下的L形状。 还包括在腔室中的底边电极是电接地的并且与底部电极间隔开。 下边缘电极被设置成环绕底部电极。 底部边缘电极被定向成与顶部边缘电极的向下的L形相对。
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公开(公告)号：US20100181025A1
公开(公告)日：2010-07-22
申请号：US12750612
申请日：2010-03-30
IPC分类号： C23F1/08
CPC分类号： H01L21/02087 , B08B7/0035
摘要： An apparatus generating a plasma for removing fluorinated polymer from a substrate is provided. The apparatus includes a powered electrode assembly, which includes a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The apparatus also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated. The first wire mesh is shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the fluorinated polymer.
摘要翻译： 提供一种从衬底生成用于除去氟化聚合物的等离子体的装置。 所述装置包括电源电极组件，其包括供电电极，第一电介质层和布置在所述电源电极和所述第一电介质层之间的第一电线网。 该装置还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔。 当空腔中存在等离子体时，第一电介质层通过第一电介质层屏蔽第一丝网，其在一端具有出口以提供等离子体以除去氟化聚合物。
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公开(公告)号：US06842147B2
公开(公告)日：2005-01-11
申请号：US10200833
申请日：2002-07-22
CPC分类号： H01J37/321 , H01J37/3299 , H01Q7/00 , H01Q21/29 , H05H1/46
摘要： An antenna arrangement for generating an rf field distribution at a plasma generating region inside a chamber wall of a process chamber of a plasma processing apparatus is described. The antenna arrangement includes an rf inductive antenna to which an rf power supply can be connected to supply an rf current to generate a first rf field extending into the plasma generating region. A passive antenna is also provided which is inductively coupled to the rf inductive antenna and configured to generate a second rf field modifying the first rf field. The rf field distribution at the plasma generating region increases the processing uniformity of the processing apparatus compared to that in the absence of the passive antenna.
摘要翻译： 描述了一种用于在等离子体处理装置的处理室的室壁内的等离子体产生区域处产生射频场分布的天线装置。 天线装置包括一个rf感应天线，rf电源可以连接到rf电源，以提供rf电流以产生延伸到等离子体产生区域中的第一rf场。 还提供无源天线，其被感应耦合到rf感应天线并且被配置为生成修改第一rf场的第二rf场。 与没有无源天线的情况相比，等离子体产生区域的射频场分布增加了处理装置的处理均匀性。
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10.发明授权Apparatus and methods for improving the stability of RF power delivery to a plasma load 有权用于提高RF功率输送到等离子体负载的稳定性的装置和方法公开(公告)号：US06838832B1
公开(公告)日：2005-01-04
申请号：US10259160
申请日：2002-09-26
CPC分类号： H03H7/40 , H01J37/32082 , H01J37/32183
摘要： Methods for improving the stability of RF power delivery to a plasma load are disclosed. The method includes adding an RF resistor and/or a power attenuator at one of many specific locations in the RF power system to lower the impedance derivatives while keeping the matching circuit substantially in tune with the RF transmission line.
摘要翻译： 公开了用于提高RF功率输送到等离子体载荷的稳定性的方法。 该方法包括在RF功率系统中的许多特定位置之一处添加RF电阻器和/或功率衰减器，以降低阻抗导数，同时保持匹配电路与RF传输线基本一致。
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