Adaptive clock recovery
    1.
    发明申请
    Adaptive clock recovery 有权
    自适应时钟恢复

    公开(公告)号:US20050100054A1

    公开(公告)日:2005-05-12

    申请号:US10646087

    申请日:2003-08-22

    IPC分类号: H04L7/00 H04J3/06

    CPC分类号: H04J3/0632 H04J3/0682

    摘要: A method of recovering a clock signal for a TDM output from packets of TDM data which have been transmitted over a packet network, from a source having a source TDM clock to a destination having a destination TDM clock. The method includes providing at least some packets with a Remote Timestamp representing the state of the source TDM clock when the packet is created; providing said at least some packets with a Local Timestamp representing the state of the destination TDM clock when the packet is received; determining a Transit Time value representing the difference between said Local and Remote Timestamps; and controlling the clock frequency of the TDM output on the basis of said Transit Time as determined above.

    摘要翻译: 一种从已经通过分组网络发送的TDM数据的分组从具有源TDM时钟的源到具有目的地TDM时钟的目的地的TDM输出的时钟信号的恢复方法。 所述方法包括:当所述分组被创建时,提供表示所述源TDM时钟的状态的远程时间戳的至少一些分组; 当接收到所述分组时,向所述至少一些分组提供表示目的地TDM时钟的状态的本地时间戳; 确定表示所述本地和远程时间戳之间的差的传输时间值; 以及基于上述确定的所述运输时间来控制TDM输出的时钟频率。

    Adaptive clock recovery
    2.
    发明申请
    Adaptive clock recovery 审中-公开
    自适应时钟恢复

    公开(公告)号:US20050100006A1

    公开(公告)日:2005-05-12

    申请号:US10652645

    申请日:2003-08-28

    IPC分类号: H04L12/56 H04J3/06 H04L12/50

    CPC分类号: H04J3/0632

    摘要: A method of recovering a clock signal for a TDM output from packets of TDM data which have been transmitted over a packet network. The method includes providing a packet buffer to store incoming packets after transmission over the packet network, maintaining a packet count which is incremented as packets arrive at the packet buffer, and decremented each time a packet leaves the packet buffer, and sampling the packet count and controlling the clock frequency of the TDM output on the basis of the sampled packet count.

    摘要翻译: 一种从已经通过分组网络发送的TDM数据的分组恢复TDM输出的时钟信号的方法。 该方法包括提供一个分组缓冲器,用于在通过分组网络传输之后存储输入分组,保持分组计数,其随着分组到达分组缓冲器而增加,并且每当分组离开分组缓冲器时递减,并且对分组计数进行采样, 基于采样分组计数控制TDM输出的时钟频率。

    Bayonet held bearing hanger assembly
    3.
    发明授权
    Bayonet held bearing hanger assembly 失效
    卡口挂轴承座组装

    公开(公告)号:US5080501A

    公开(公告)日:1992-01-14

    申请号:US680349

    申请日:1991-04-04

    IPC分类号: F16C35/067

    CPC分类号: F16C35/067

    摘要: A hanger bearing assembly comprising a hanger plate having a hole therethrough and adapted to be suspended from a support. A bearing having an outer surface complementary to the hole is located therein. A resilient radially compressible bayonet lock, substantially in the shape of a ring, has a bearing surface which is at least partially in contact with the adjacent surface of either the bearing or the hanger plate. The bayonet lock has portions and at least one extension on the bearing surface extending axially through openings and an extension receiver in the hanger plate; detents are provided on the extensions substantially at right angles thereto circumferentially of the ring and the edges on the detents contact the other of the bearing or hanger plate, whereby radially compression of said bayonet lock permits insertion of the portions into the slots and the extension into the extension receiver, and release of the bayonet lock cause the edges to bear against the other side and releasably retain the bearing in contact with the hanger plate.

    摘要翻译: 一种衣架轴承组件,其包括具有穿过其中的孔并适于从支撑件悬挂的悬挂板。 具有与孔互补的外表面的轴承位于其中。 基本上呈环状的弹性径向可压缩卡口锁具有至少部分地与轴承或悬挂板的相邻表面接触的支承表面。 卡口锁在轴承表面上具有部分和至少一个延伸部,其轴向延伸穿过开口和延伸接收器在吊架板中; 棘爪在延伸部上基本上与环的圆周方向成直角设置,棘爪上的边缘接触轴承或悬挂板中的另一个,由此卡口锁的径向压缩允许将部分插入槽中并将其延伸成 延伸接收器和卡口锁的释放使得边缘抵靠另一侧并且可释放地保持轴承与悬挂板接触。

    Drill screw for adjusting molding relative to an underlying wall

    公开(公告)号:US06623227B2

    公开(公告)日:2003-09-23

    申请号:US09916387

    申请日:2001-07-27

    IPC分类号: F16B2510

    摘要: A drill screw includes a boring end having cutting edges adapted to cut when rotated in a counterclockwise direction, and a portion having threads adapted to enter a piece of molding when rotated in a clockwise direction. The drill screw is driven into a piece of molding in the counterclockwise direction to bore a hole therethrough and cause the threads to meet the face of the molding. The drill screw is then rotated in the clockwise direction to cause the threads to tap into the molding, bore through the wall behind the molding, and contact a jackpost behind the wall. Rotation of the drill screw thereafter causes the molding to ride outward from the wall and over the drill screw such that the molding contacts an adjoining piece of molding at an inside corner and thereby substantially eliminating any gap therebetween.

    Semiconductor processing with silicon cap over Si.sub.1-x Ge.sub.x Film
    5.
    发明授权
    Semiconductor processing with silicon cap over Si.sub.1-x Ge.sub.x Film 失效
    半导体处理与Si1-xGex薄膜上的硅帽

    公开(公告)号:US5084411A

    公开(公告)日:1992-01-28

    申请号:US277593

    申请日:1988-11-29

    IPC分类号: H01L21/20 H01L21/205

    摘要: Improved devices with silicon to SiGe alloy heterojunctions are provided for in accordance with the following discoveries. X-ray topography and transmission electron microscopy were used to quantify misfit-dislocation spacings in as-grown Si.sub.1-x Ge.sub.x films formed by Limited Reaction Processing (LRP), which is a chemical vapor deposition technique. These analysis techniques were also used to study dislocation formation during annealing of material grown by both LRP and by molecular beam epitaxy (MBE). The thickness at which misfit dislocations first appear in as-grown material was similar for both growth techniques. The thermal stability of capped and uncapped films was also investigated after rapid thermal annealing in the range of 625.degree. to 1000.degree. C. Significantly fewer misfit dislocations were observed in samples containing an epitaxial silicon cap. Some differences in the number of misfit dislocations generated in CVD and MBE films were observed after annealing uncapped layers at temperatures between 625.degree. and 825.degree. C.

    摘要翻译: 根据以下发现提供了具有硅到SiGe合金异质结的改进的器件。 使用X射线形貌和透射电子显微镜来定量由作为化学气相沉积技术的限制反应处理(LRP)形成的生长的Si1-xGex膜中的失配位错间隔。 这些分析技术也用于研究在通过LRP和分子束外延(MBE)生长的材料退火期间的位错形成。 失配位错首先出现在生长材料中的厚度对于两种生长技术是相似的。 在625℃至1000℃的范围内快速热退火后,还研究了封盖和未封装的膜的热稳定性。在含有外延硅帽的样品中观察到不合适的位错显着更少。 在625°和825℃之间的温度下退火未封层后,观察到在CVD和MBE膜中产生的失配位错数量的一些差异。

    Stabilizing apparatus
    6.
    发明授权

    公开(公告)号:US09994291B2

    公开(公告)日:2018-06-12

    申请号:US15089615

    申请日:2016-04-04

    申请人: Martin Scott

    发明人: Martin Scott

    IPC分类号: B63B1/28 B63B39/06

    摘要: A stabilizing apparatus for a waterborne vessel is disclosed, the stabilizing apparatus comprising a stabilizer unit, said stabilizer unit comprising: an elongate main body suitable for attachment to said a waterborne vessel; a stabilizing fin member rotatably coupled to said elongate main body about a first axis of rotation; and a drive apparatus attached to said main body and operatively coupled to said stabilizing fin member.

    Clamped bearing hanger assembly
    7.
    发明授权
    Clamped bearing hanger assembly 失效
    夹紧轴承架组件

    公开(公告)号:US5052829A

    公开(公告)日:1991-10-01

    申请号:US575420

    申请日:1990-08-30

    IPC分类号: F16C35/00 F16C35/077

    CPC分类号: F16C35/00 F16C35/077

    摘要: A hanger assembly comprising a shroud and a releasable bearing. The shroud has a pair of tongues which are adapted to be inserted into complementary slots on the housing of the bearing. Troughs are provided in the tongues and complementary tabs are on the bearing. After insertion of the tongues into the slots, the tabs are bent around the tongues in the troughs, thereby mounting the bearing on the shroud.

    摘要翻译: 一种衣架组件,包括护罩和可释放的轴承。 护罩具有一对舌片,其适于插入到轴承的壳体上的互补狭槽中。 在舌头中设有槽,互补的标签位于轴承上。 在将舌片插入槽中之后,突片围绕槽中的舌部弯曲,从而将轴承安装在护罩上。

    Coping apparatus
    8.
    发明授权
    Coping apparatus 失效
    应对装置

    公开(公告)号:US6095726A

    公开(公告)日:2000-08-01

    申请号:US7677

    申请日:1998-01-15

    摘要: A coping device includes a circular blade, a template having an end provided with a coped profile, a stylus which traces the coped profile of the template and which preferably has substantially the same width and radius of curvature as the blade, clamps for respectively securing the molding and the template in a fixed position, and a base having a stationary portion and a movable portion movable in X and Y directions relative to the stationary portion. The clamps are coupled to the stationary portion, and the blade and the stylus are both coupled to the movable portion. The blade and the stylus are substantially simultaneously movable relative to the clamps so that the molding can be coped with the blade as the stylus traverses the coped profile of the template. The blade and the stylus have the same width, and the stylus is provided with a leading edge having a radiused contour matching the blade. In addition, when coping a crown molding, the blade and the stylus are tiltable to the same angle.

    摘要翻译: 应对装置包括圆形刀片,模具,其具有设置有复盖轮廓的端部,跟踪模板的复制轮廓并且优选地具有与刀片基本相同的宽度和曲率半径的触针,用于分别固定 模制和模板在固定位置,以及具有相对于静止部分在X和Y方向上可移动的固定部分和可移动部分的基部。 夹具联接到固定部分,并且刀片和触针都联接到可动部分。 刀片和触针相对于夹具基本上可同时移动,使得当触针穿过模板的复制轮廓时,模制件可以与刀片对应。 刀片和触针具有相同的宽度,并且触针设置有具有与刀片匹配的圆弧轮廓的前缘。 另外,当应对冠部成型时,刀片和触笔可倾斜到相同的角度。

    Ball bearing assembly
    9.
    发明授权
    Ball bearing assembly 失效
    滚珠轴承总成

    公开(公告)号:US4729674A

    公开(公告)日:1988-03-08

    申请号:US848764

    申请日:1986-04-07

    摘要: A bearing composed of an inner race, two outer races concentric therewith and spaced axially from each other to leave a gap between them. Sets of ball bearings are located between the inner race and each of the two outer races. The outer races are provided with shoulders projecting axially toward one another and the whole is secured by a band wrapped circumferentially around the shoulders. Preferably, the band is thinner than the outer races so that part of the gap remains. The band is somewhat longer than the circumference and the ends are turned radially outwardly and fastened together.In a particularly improved form of the device, frames are located in the gap and are releasably fastened to one another. The width of the gap is larger than the thickness of the frames, so that there is a certain amount of play in the bearing. This provides a self-aligning feature.

    摘要翻译: 由内圈构成的轴承,与其同心的两个外圈,并且彼此轴向间隔开,以在它们之间留下间隙。 一组球轴承位于内圈和两个外圈之间。 外圈设置有朝向彼此轴向突出的肩部,并且整个由周围围绕肩部缠绕的带固定。 优选地,带比外圈更薄,使得间隙的一部分保留。 该带比圆周稍长,并且端部径向向外转动并紧固在一起。 在装置的特别改进的形式中,框架位于间隙中并且可释放地彼此紧固。 间隙的宽度大于框架的厚度,从而在轴承中存在一定量的间隙。 这提供了自动对准功能。

    Fabricating a semiconductor device with strained Si.sub.1-x Ge.sub.x
layer
    10.
    发明授权
    Fabricating a semiconductor device with strained Si.sub.1-x Ge.sub.x layer 失效
    制造具有应变Si1-xGex层的半导体器件

    公开(公告)号:US5256550A

    公开(公告)日:1993-10-26

    申请号:US715054

    申请日:1991-06-12

    IPC分类号: H01L21/20 H01L21/205

    摘要: The present invention comprises a method of fabricating devices and circuits employing at least one heteroepitaxial layer under strain. The thickness of the heteroepitaxial layer is more than two times the calculated equilibrium critical thickness for an uncapped heteroepitaxial layer upon a crystalline substrate, based on previously known equilibrium theory for the uncapped layer. Subsequent to growth of the heteroepitaxial layer, the structure is processed at temperatures higher than the growth temperature of the heteroepitaxial layer.The strained heteroepitaxial layer (second layer) is epitaxially grown upon the surface of a first, underlaying crystalline layer, creating a heterojunction. Subsequently a third crystalline layer is deposited or grown upon the major exposed surface of the second, strained heteroepitaxial layer. The preferred manner of growth of the third crystalline layer is epitaxial growth. The composition of the third crystalline layer must be such that upon deposition or growth, the third layer substantially continuously binds to the heteroepitaxial structure of the second layer. Subsequent to growth of the at least three layer structure, the structure is processed at temperatures in excess of the growth temperature of the second heteroepitaxial layer. Presence of the third crystalline layer prevents the generation of a substantial amount of misfit dislocations between the first crystalline layer substrate and the second heteroepitaxial layer.

    摘要翻译: 本发明包括一种在应变下使用至少一个异质外延层的器件和电路的制造方法。 基于先前已知的无盖层的平衡理论,异质外延层的厚度超过了在结晶衬底上的无盖异质外延层的计算的平衡临界厚度的两倍。 在异质外延层的生长之后,在高于异质外延层的生长温度的温度下处理该结构。 应变异质外延层(第二层)在第一底层晶体层的表面上外延生长,产生异质结。 随后,在第二应变异质外延层的主要暴露表面上沉积或生长第三晶体层。 第三晶体层的优选生长方式是外延生长。 第三结晶层的组成必须使得在沉积或生长时,第三层基本上连续地结合到第二层的异质外延结构。 在至少三层结构生长之后,在超过第二异质外延层的生长温度的温度下处理该结构。 第三结晶层的存在防止在第一晶体层衬底和第二异质外延层之间产生大量的失配位错。