摘要:
A method of recovering a clock signal for a TDM output from packets of TDM data which have been transmitted over a packet network, from a source having a source TDM clock to a destination having a destination TDM clock. The method includes providing at least some packets with a Remote Timestamp representing the state of the source TDM clock when the packet is created; providing said at least some packets with a Local Timestamp representing the state of the destination TDM clock when the packet is received; determining a Transit Time value representing the difference between said Local and Remote Timestamps; and controlling the clock frequency of the TDM output on the basis of said Transit Time as determined above.
摘要:
A method of recovering a clock signal for a TDM output from packets of TDM data which have been transmitted over a packet network. The method includes providing a packet buffer to store incoming packets after transmission over the packet network, maintaining a packet count which is incremented as packets arrive at the packet buffer, and decremented each time a packet leaves the packet buffer, and sampling the packet count and controlling the clock frequency of the TDM output on the basis of the sampled packet count.
摘要:
A hanger bearing assembly comprising a hanger plate having a hole therethrough and adapted to be suspended from a support. A bearing having an outer surface complementary to the hole is located therein. A resilient radially compressible bayonet lock, substantially in the shape of a ring, has a bearing surface which is at least partially in contact with the adjacent surface of either the bearing or the hanger plate. The bayonet lock has portions and at least one extension on the bearing surface extending axially through openings and an extension receiver in the hanger plate; detents are provided on the extensions substantially at right angles thereto circumferentially of the ring and the edges on the detents contact the other of the bearing or hanger plate, whereby radially compression of said bayonet lock permits insertion of the portions into the slots and the extension into the extension receiver, and release of the bayonet lock cause the edges to bear against the other side and releasably retain the bearing in contact with the hanger plate.
摘要:
A drill screw includes a boring end having cutting edges adapted to cut when rotated in a counterclockwise direction, and a portion having threads adapted to enter a piece of molding when rotated in a clockwise direction. The drill screw is driven into a piece of molding in the counterclockwise direction to bore a hole therethrough and cause the threads to meet the face of the molding. The drill screw is then rotated in the clockwise direction to cause the threads to tap into the molding, bore through the wall behind the molding, and contact a jackpost behind the wall. Rotation of the drill screw thereafter causes the molding to ride outward from the wall and over the drill screw such that the molding contacts an adjoining piece of molding at an inside corner and thereby substantially eliminating any gap therebetween.
摘要:
Improved devices with silicon to SiGe alloy heterojunctions are provided for in accordance with the following discoveries. X-ray topography and transmission electron microscopy were used to quantify misfit-dislocation spacings in as-grown Si.sub.1-x Ge.sub.x films formed by Limited Reaction Processing (LRP), which is a chemical vapor deposition technique. These analysis techniques were also used to study dislocation formation during annealing of material grown by both LRP and by molecular beam epitaxy (MBE). The thickness at which misfit dislocations first appear in as-grown material was similar for both growth techniques. The thermal stability of capped and uncapped films was also investigated after rapid thermal annealing in the range of 625.degree. to 1000.degree. C. Significantly fewer misfit dislocations were observed in samples containing an epitaxial silicon cap. Some differences in the number of misfit dislocations generated in CVD and MBE films were observed after annealing uncapped layers at temperatures between 625.degree. and 825.degree. C.
摘要:
A stabilizing apparatus for a waterborne vessel is disclosed, the stabilizing apparatus comprising a stabilizer unit, said stabilizer unit comprising: an elongate main body suitable for attachment to said a waterborne vessel; a stabilizing fin member rotatably coupled to said elongate main body about a first axis of rotation; and a drive apparatus attached to said main body and operatively coupled to said stabilizing fin member.
摘要:
A hanger assembly comprising a shroud and a releasable bearing. The shroud has a pair of tongues which are adapted to be inserted into complementary slots on the housing of the bearing. Troughs are provided in the tongues and complementary tabs are on the bearing. After insertion of the tongues into the slots, the tabs are bent around the tongues in the troughs, thereby mounting the bearing on the shroud.
摘要:
A coping device includes a circular blade, a template having an end provided with a coped profile, a stylus which traces the coped profile of the template and which preferably has substantially the same width and radius of curvature as the blade, clamps for respectively securing the molding and the template in a fixed position, and a base having a stationary portion and a movable portion movable in X and Y directions relative to the stationary portion. The clamps are coupled to the stationary portion, and the blade and the stylus are both coupled to the movable portion. The blade and the stylus are substantially simultaneously movable relative to the clamps so that the molding can be coped with the blade as the stylus traverses the coped profile of the template. The blade and the stylus have the same width, and the stylus is provided with a leading edge having a radiused contour matching the blade. In addition, when coping a crown molding, the blade and the stylus are tiltable to the same angle.
摘要:
A bearing composed of an inner race, two outer races concentric therewith and spaced axially from each other to leave a gap between them. Sets of ball bearings are located between the inner race and each of the two outer races. The outer races are provided with shoulders projecting axially toward one another and the whole is secured by a band wrapped circumferentially around the shoulders. Preferably, the band is thinner than the outer races so that part of the gap remains. The band is somewhat longer than the circumference and the ends are turned radially outwardly and fastened together.In a particularly improved form of the device, frames are located in the gap and are releasably fastened to one another. The width of the gap is larger than the thickness of the frames, so that there is a certain amount of play in the bearing. This provides a self-aligning feature.
摘要:
The present invention comprises a method of fabricating devices and circuits employing at least one heteroepitaxial layer under strain. The thickness of the heteroepitaxial layer is more than two times the calculated equilibrium critical thickness for an uncapped heteroepitaxial layer upon a crystalline substrate, based on previously known equilibrium theory for the uncapped layer. Subsequent to growth of the heteroepitaxial layer, the structure is processed at temperatures higher than the growth temperature of the heteroepitaxial layer.The strained heteroepitaxial layer (second layer) is epitaxially grown upon the surface of a first, underlaying crystalline layer, creating a heterojunction. Subsequently a third crystalline layer is deposited or grown upon the major exposed surface of the second, strained heteroepitaxial layer. The preferred manner of growth of the third crystalline layer is epitaxial growth. The composition of the third crystalline layer must be such that upon deposition or growth, the third layer substantially continuously binds to the heteroepitaxial structure of the second layer. Subsequent to growth of the at least three layer structure, the structure is processed at temperatures in excess of the growth temperature of the second heteroepitaxial layer. Presence of the third crystalline layer prevents the generation of a substantial amount of misfit dislocations between the first crystalline layer substrate and the second heteroepitaxial layer.