公开(公告)号：US20050195540A1

公开(公告)日：2005-09-08

申请号：US11070824

申请日：2005-03-01

申请人： Martin Streibl ,  Kai Esmark ,  Christian Russ ,  Martin Wendel ,  Harald Gossner

发明人： Martin Streibl ,  Kai Esmark ,  Christian Russ ,  Martin Wendel ,  Harald Gossner

IPC分类号： H01L23/60 ,  H02H9/00 ,  H02H9/02

CPC分类号： H01L27/0262 ,  H01L27/0259

摘要： An ESD protective circuit protects an input or output of a monolithically integrated circuit. The ESD protective circuit has at least one bipolar transistor structure and one ESD protective element between two supply networks. The emitter of the bipolar transistor structure is electrically connected to the input or output, while the base is electrically connected to one of the two supply networks. The collector produces a current signal, which is used for triggering of the ESD protective element, when an ESD load occurs at the input or output.

摘要翻译： ESD保护电路保护单片集成电路的输入或输出。 ESD保护电路在两个供电网络之间具有至少一个双极晶体管结构和一个ESD保护元件。 双极晶体管结构的发射极电连接到输入或输出，而基极电连接到两个供电网络之一。 当输入或输出发生ESD负载时，集电极产生电流信号，用于触发ESD保护元件。

公开(公告)号：US07087938B2

公开(公告)日：2006-08-08

申请号：US11070824

申请日：2005-03-01

申请人： Martin Streibl ,  Kai Esmark ,  Christian Russ ,  Martin Wendel ,  Harald Gossner

发明人： Martin Streibl ,  Kai Esmark ,  Christian Russ ,  Martin Wendel ,  Harald Gossner

IPC分类号： H01L29/72 ,  H02H3/00

CPC分类号： H01L27/0262 ,  H01L27/0259

摘要： An ESD protective circuit protects an input or output of a monolithically integrated circuit. The ESD protective circuit has at least one bipolar transistor structure and one ESD protective element between two supply networks. The emitter of the bipolar transistor structure is electrically connected to the input or output, while the base is electrically connected to one of the two supply networks. The collector produces a current signal, which is used for triggering of the ESD protective element, when an ESD load occurs at the input or output.

摘要翻译： ESD保护电路保护单片集成电路的输入或输出。 ESD保护电路在两个供电网络之间具有至少一个双极晶体管结构和一个ESD保护元件。 双极晶体管结构的发射极电连接到输入或输出，而基极电连接到两个供电网络之一。 当输入或输出发生ESD负载时，集电极产生电流信号，用于触发ESD保护元件。

公开(公告)号：US06905892B2

公开(公告)日：2005-06-14

申请号：US10200067

申请日：2002-07-19

申请人： Kai Esmark ,  Harald Gossner ,  Philipp Riess ,  Wolfgang Stadler ,  Martin Streibl ,  Martin Wendel

发明人： Kai Esmark ,  Harald Gossner ,  Philipp Riess ,  Wolfgang Stadler ,  Martin Streibl ,  Martin Wendel

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L23/60 ,  H01L29/74 ,  G01R31/26

CPC分类号： H01L23/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention creates an operating method for a semiconductor component having a substrate; having a conductive polysilicon strip which is applied to the substrate; having a first and a second electrical contact which are connected to the conductive polysilicon strip such that this forms an electrical resistance in between them; with the semiconductor component being operated reversibly in a current/voltage range in which it has a first differential resistance (Rdiff1) up to a current limit value (It) corresponding to an upper voltage limit value (Vt) and, at current values greater than this, has a second differential resistance (Rdiff2), which is less than the first differential resistance (Rdiff1).

摘要翻译： 本发明创造了具有基板的半导体部件的操作方法; 具有施加到衬底的导电多晶硅条; 具有连接到导电多晶硅条的第一和第二电接触，使得它们之间形成电阻; 半导体部件在其具有第一差分电阻（Rdiff 1）的电流/电压范围内可逆地操作，直到对应于上限电压限制值（Vt）的电流限制值（It），并且在当前值更大 具有小于第一差分电阻（Rdiff 1）的第二差分电阻（Rdiff 2）。

公开(公告)号：US07359169B2

公开(公告)日：2008-04-15

申请号：US10536176

申请日：2003-11-24

申请人： Kai Esmark ,  Harald Gossner ,  Wolfgang Stadler ,  Martin Streibl ,  Martin Wendel

发明人： Kai Esmark ,  Harald Gossner ,  Wolfgang Stadler ,  Martin Streibl ,  Martin Wendel

IPC分类号： H02H9/00 ,  H02H9/08 ,  H02H3/20 ,  H02H9/04 ,  H02H3/22 ,  H02H1/00 ,  H02H1/04 ,  H02H9/06 ,  H01C7/12

CPC分类号： H02H9/046

摘要： A circuit is described that protects an integrated circuit from electrostatic discharges or electrical over-stress. The circuit arrangement has first and second protective elements connected in series between a connection of the integrated circuit and a supply voltage. When electrostatic discharges or electrical over-stress occurs, current flows through the conductive path formed through the first and second protective elements. A current path that contains a circuit element limits current through the first protective element is connected in parallel with the first protective element. The first protective element has blocking behavior when no electrostatic discharges or electrical over-stress occurs, a limited current flows through the current path and the second protective element.

摘要翻译： 描述了保护集成电路免受静电放电或电过压的电路。 电路装置具有在集成电路的连接和电源电压之间串联连接的第一和第二保护元件。 当发生静电放电或电过压时，电流流过形成在第一和第二保护元件上的导电路径。 包含电路元件的电流路径限制通过第一保护元件的电流与第一保护元件并联连接。 当不产生静电放电或电过度应力时，第一保护元件具有阻塞行为，有限的电流流过电流通路和第二保护元件。

公开(公告)号：US06930501B2

公开(公告)日：2005-08-16

申请号：US10866863

申请日：2004-06-14

申请人： Silke Bargstädt-Franke ,  Kai Esmark ,  Harald Gossner ,  Philipp Riess ,  Wolfgang Stadler ,  Martin Streibl ,  Martin Wendel

发明人： Silke Bargstädt-Franke ,  Kai Esmark ,  Harald Gossner ,  Philipp Riess ,  Wolfgang Stadler ,  Martin Streibl ,  Martin Wendel

IPC分类号： H01L23/544 ,  H01L23/60 ,  G01R31/26

CPC分类号： H01L22/34 ,  H01L23/60 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A method for determining an ESD/latch-up strength of an integrated circuit includes producing an integrated circuit and a test structure using the same fabrication process. Electrical parameters at the test structure are measured and characteristic values associated with the integrated circuit are derived from the measured parameter values, wherein the characteristic values characterize an ESD or latch-up characteristic curve associated with the integrated circuit. The method further includes testing whether the characteristic values in each case lie within a predetermined range assigned to them, wherein the ranges are chosen such that a desired ESD/latch-up strength is present if the characteristic values in each case lie within their range.

公开(公告)号：US07009404B2

公开(公告)日：2006-03-07

申请号：US10160740

申请日：2002-05-31

申请人： Martin Wendel ,  Richard Owen ,  Harald Gossner ,  Wolfgang Stadler ,  Philipp Riess ,  Martin Streibl ,  Kai Esmark

发明人： Martin Wendel ,  Richard Owen ,  Harald Gossner ,  Wolfgang Stadler ,  Philipp Riess ,  Martin Streibl ,  Kai Esmark

IPC分类号： G01R31/08 ,  G01R27/08

CPC分类号： G01R31/002 ,  G01R31/129

摘要： To test the ESD resistance of a semiconductor component, for example of a NOS transistor, which can be used as a PSD protective element in a chip, a direct current characteristic of the semiconductor component is monitored and the ESD resistance of the respective semiconductor component is inferred depending on this. In particular, the direct current failure threshold of the semiconductor component at which an increased leakage current occurs in the non-conducting direction of the semiconductor component can be monitored in operation of the semiconductor component using an applied direct current and the ESD resistance of the semiconductor component inferred depending on a change in this direct current failure threshold.

摘要翻译： 为了测试可用作芯片中的PSD保护元件的例如可用作PSD保护元件的NOS晶体管的半导体部件的ESD电阻，监视半导体部件的直流特性，并且各半导体部件的ESD电阻为 据此推断。 特别地，可以在使用所施加的直流电流和半导体的ESD电阻的半导体组件的操作中监视在半导体组件的非导通方向上发生增加的漏电流的半导体组件的直流故障阈值 根据该直流故障阈值的变化推断分量。

公开(公告)号：US20060056121A1

公开(公告)日：2006-03-16

申请号：US10536176

申请日：2003-11-24

申请人： Kai Esmark ,  Harald Gossner ,  Wolfgang Stadler ,  Martin Streibl ,  Martin Wendel

发明人： Kai Esmark ,  Harald Gossner ,  Wolfgang Stadler ,  Martin Streibl ,  Martin Wendel

IPC分类号： H02H9/00

CPC分类号： H02H9/046

摘要： A circuit is described that protects an integrated circuit from electrostatic discharges or electrical over-stress. The circuit arrangement has first and second protective elements connected in series between a connection of the integrated circuit and a supply voltage. When electrostatic discharges or electrical over-stress occurs, current flows through the conductive path formed through the first and second protective elements. A current path that contains a circuit element limits current through the first protective element is connected in parallel with the first protective element. The first protective element has blocking behavior when no electrostatic discharges or electrical over-stress occurs, a limited current flows through the current path and the second protective element.

摘要翻译： 描述了保护集成电路免受静电放电或电过压的电路。 电路装置具有在集成电路的连接和电源电压之间串联连接的第一和第二保护元件。 当发生静电放电或电过压时，电流流过形成在第一和第二保护元件上的导电路径。 包含电路元件的电流路径限制通过第一保护元件的电流与第一保护元件并联连接。 当不产生静电放电或电过度应力时，第一保护元件具有阻塞行为，有限的电流流过电流通路和第二保护元件。

公开(公告)号：US20050003564A1

公开(公告)日：2005-01-06

申请号：US10866863

申请日：2004-06-14

申请人： Silke Bargstadt-Franke ,  Kai Esmark ,  Harald Gossner ,  Philipp Riess ,  Wolfgang Stadler ,  Martin Streibl ,  Martin Wendel

发明人： Silke Bargstadt-Franke ,  Kai Esmark ,  Harald Gossner ,  Philipp Riess ,  Wolfgang Stadler ,  Martin Streibl ,  Martin Wendel

IPC分类号： H01L23/544 ,  H01L23/60 ,  G01R31/26

CPC分类号： H01L22/34 ,  H01L23/60 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A method for determining an ESD/latch-up strength of an integrated circuit includes producing an integrated circuit and a test structure using the same fabrication process. Electrical parameters at the test structure are measured and characteristic values associated with the integrated circuit are derived from the measured parameter values, wherein the characteristic values characterize an ESD or latch-up characteristic curve associated with the integrated circuit. The method further includes testing whether the characteristic values in each case lie within a predetermined range assigned to them, wherein the ranges are chosen such that a desired ESD/latch-up strength is present if the characteristic values in each case lie within their range.

摘要翻译： 用于确定集成电路的ESD /闭锁强度的方法包括使用相同的制造工艺制造集成电路和测试结构。 测量测试结构的电气参数，并且从测量的参数值导出与集成电路相关联的特征值，其中特征值表征与集成电路相关联的ESD或闭锁特性曲线。 该方法还包括测试每种情况下的特征值是否在分配给它们的预定范围内，其中选择范围使得如果每种情况下的特征值在其范围内，则存在期望的ESD /闩锁强度。

公开(公告)号：US08076728B2

公开(公告)日：2011-12-13

申请号：US12511845

申请日：2009-07-29

申请人： Kai Esmark ,  Harald Gossner ,  Christian Russ ,  Jens Schneider

发明人： Kai Esmark ,  Harald Gossner ,  Christian Russ ,  Jens Schneider

IPC分类号： H01L23/62

CPC分类号： H01L29/94 ,  H01L27/0811

摘要： A circuit arrangement including a capacitor in an n-type well is disclosed. A specific polarization of the capacitor ensures that a depletion zone arises in the well and the capacitor has a high ESD strength. An optionally present auxiliary doping layer ensures a high area capacitance of the capacitor despite high ESD strength.

摘要翻译： 公开了一种在n型阱中包括电容器的电路装置。 电容器的特定极化确保在阱中产生耗尽区，并且电容器具有高的ESD强度。 任选地存在的辅助掺杂层确保了电容器的高面积电容，尽管高度的ESD强度。

公开(公告)号：US20090283810A1

公开(公告)日：2009-11-19

申请号：US12511845

申请日：2009-07-29

申请人： Kai Esmark ,  Harald Gossner ,  Christian Russ ,  Jens Schneider

发明人： Kai Esmark ,  Harald Gossner ,  Christian Russ ,  Jens Schneider

IPC分类号： H01L29/94 ,  H03K3/01

CPC分类号： H01L29/94 ,  H01L27/0811

摘要： A circuit arrangement including a capacitor in an n-type well is disclosed. A specific polarization of the capacitor ensures that a depletion zone arises in the well and the capacitor has a high ESD strength. An optionally present auxiliary doping layer ensures a high area capacitance of the capacitor despite high ESD strength.

摘要翻译： 公开了一种在n型阱中包括电容器的电路装置。 电容器的特定极化确保在阱中产生耗尽区，并且电容器具有高的ESD强度。 任选地存在的辅助掺杂层确保电容器的高面积电容，尽管具有高的ESD强度。