公开(公告)号：US06772045B2

公开(公告)日：2004-08-03

申请号：US10231019

申请日：2002-08-30

申请人： Shuji Katsui ,  Masayuki Tanaka ,  Masaki Kamimura ,  Hiroshi Akahori ,  Ichiro Mizushima ,  Takashi Nakao ,  Akihito Yamamoto ,  Shigehiko Saida ,  Yoshitaka Tsunashima ,  Yuuichi Mikata

发明人： Shuji Katsui ,  Masayuki Tanaka ,  Masaki Kamimura ,  Hiroshi Akahori ,  Ichiro Mizushima ,  Takashi Nakao ,  Akihito Yamamoto ,  Shigehiko Saida ,  Yoshitaka Tsunashima ,  Yuuichi Mikata

IPC分类号： G06F1900

CPC分类号： H04L12/66 ,  Y10S438/905

摘要： A system for determining dry cleaning timing, includes: a manufacturing apparatus configured to process materials assigned by a sequence of lots; an apparatus controller configured to control the manufacturing apparatus and obtaining operational conditions of the manufacturing apparatus as apparatus information; a lot information input terminal configured to obtain process conditions of one of the lots as lot information; an apparatus information storage unit configured to store the apparatus information from the apparatus controller as an apparatus information database; a lot information storage unit configured to store the lot information from the lot information input terminal as a lot information database; and a cleaning determination unit configured to determine timing to perform a dry cleaning of the manufacturing apparatus based on the apparatus information database and the lot information database.

摘要翻译： 一种用于确定干洗时间的系统，包括：制造装置，被配置为处理由批次序列分配的材料; 设备控制器，其被配置为控制所述制造设备并获得所述制造设备的操作条件作为设备信息; 许多信息输入终端，被配置为获取所述批中的一个的处理条件作为批量信息; 设备信息存储单元，被配置为将来自设备控制器的设备信息作为设备信息数据库存储; 许多信息存储单元被配置为将来自批次信息输入终端的批量信息作为批次信息数据库存储; 以及清洁确定单元，被配置为基于装置信息数据库和批次信息数据库来确定对制造装置进行干洗的定时。

公开(公告)号：US06989281B2

公开(公告)日：2006-01-24

申请号：US10957609

申请日：2004-10-05

申请人： Akihito Yamamoto ,  Takashi Nakao ,  Yuuichi Mikata ,  Yoshitaka Tsunashima

发明人： Akihito Yamamoto ,  Takashi Nakao ,  Yuuichi Mikata ,  Yoshitaka Tsunashima

IPC分类号： H01L21/00

CPC分类号： H01L21/67253

摘要： A cleaning method for a semiconductor device manufacturing apparatus includes a process of forming a film on a subject piece in a processing chamber, applying light having a predetermined wavelength to a monitoring section to indirectly monitor a thickness of a film formed on the subject piece, introducing cleaning gas capable of removing a substance deposited on the monitoring section into the processing chamber, measuring a reflection light which is the application light reflected near the monitoring section, measuring an amount of a substance corresponding to a thickness of a film deposited on the monitoring section based on a measurement result of the reflection light; and introducing, into the processing chamber, a cleaning gas which can remove the substance on the monitoring section until a measurement value of the amount of the substance on the monitoring section becomes zero.

摘要翻译： 半导体器件制造装置的清洁方法包括在处理室中的被检体上形成膜的处理，将具有预定波长的光施加到监视部分，以间接监视形成在被检体上的膜的厚度，引入 清除气体，其能够将沉积在监测部分上的物质去除到处理室中，测量作为在监测部分附近反射的应用光的反射光，测量与沉积在监测部分上的膜的厚度相对应的物质的量 基于反射光的测量结果; 并且在所述处理室内引入能够去除所述监测部件上的物质直到所述监测部件上的物质的量的测量值变为零的清洁气体。

公开(公告)号：US07145667B2

公开(公告)日：2006-12-05

申请号：US10230423

申请日：2002-08-29

申请人： Akihito Yamamoto ,  Takashi Nakao ,  Yuuichi Mikata ,  Yoshitaka Tsunashima

发明人： Akihito Yamamoto ,  Takashi Nakao ,  Yuuichi Mikata ,  Yoshitaka Tsunashima

IPC分类号： G01B11/28

CPC分类号： H01L21/67253

摘要： There is here disclosed a semiconductor device manufacturing method, comprising arranging at least one subject piece in a processing chamber, and starting a predetermined processing, applying a light having a predetermined wavelength to a monitoring section which is formed to enable transmission and reflection of the light and which is provided at a tip of a monitoring device to indirectly monitor a thickness of a film on the subject piece, and measuring a reflection light which is the application light is reflected near the monitoring section, while the light and the reflection light are isolated from an atmosphere and a substance in the chamber, measuring an amount of a substance on the monitoring section based on the reflection light, determining a thickness of a film on the subject piece based on the substance, and conducting the processing while controlling the processing based on the thickness of the film.

公开(公告)号：US20050059203A1

公开(公告)日：2005-03-17

申请号：US10957609

申请日：2004-10-05

申请人： Akihito Yamamoto ,  Takashi Nakao ,  Yuuichi Mikata ,  Yoshitaka Tsunashima

发明人： Akihito Yamamoto ,  Takashi Nakao ,  Yuuichi Mikata ,  Yoshitaka Tsunashima

IPC分类号： C23C16/52 ,  H01L21/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  G03B17/24

CPC分类号： H01L21/67253

摘要： A cleaning method for a semiconductor device manufacturing apparatus includes a process of forming a film on a subject piece in a processing chamber, applying light having a predetermined wavelength to a monitoring section to indirectly monitor a thickness of a film formed on the subject piece, introducing cleaning gas capable of removing a substance deposited on the monitoring section into the processing chamber, measuring a reflection light which is the application light reflected near the monitoring section, measuring an amount of a substance corresponding to a thickness of a film deposited on the monitoring section based on a measurement result of the reflection light; and introducing, into the processing chamber, a cleaning gas which can remove the substance on the monitoring section until a measurement value of the amount of the substance on the monitoring section becomes zero.

摘要翻译： 半导体器件制造装置的清洁方法包括在处理室中的被检体上形成膜的处理，将具有预定波长的光施加到监视部分，以间接监视形成在被检体上的膜的厚度，引入 清除气体，其能够将沉积在监测部分上的物质去除到处理室中，测量作为在监测部分附近反射的应用光的反射光，测量与沉积在监测部分上的膜的厚度相对应的物质的量 基于反射光的测量结果; 并且在所述处理室内引入能够去除所述监测部件上的物质直到所述监测部件上的物质的量的测量值变为零的清洁气体。

公开(公告)号：US06929991B2

公开(公告)日：2005-08-16

申请号：US10775065

申请日：2004-02-11

申请人： Yuuichi Mikata ,  Shuji Katsui ,  Hiroshi Akahori

发明人： Yuuichi Mikata ,  Shuji Katsui ,  Hiroshi Akahori

IPC分类号： H01L21/8247 ,  C23C16/24 ,  H01L21/205 ,  H01L21/28 ,  H01L21/336 ,  H01L27/115 ,  H01L29/49 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H01L21/00

CPC分类号： H01L29/66825 ,  C23C16/24 ,  H01L21/28035 ,  H01L29/4916

摘要： The present invention provides a semiconductor device and a method of manufacturing the same improved in reliability of a gate insulating film by increasing a total charge amount Qbd by suppressing a film stress of a gate electrode formed of a polysilicon film, to a low value. Since the film stress is closely related to a film formation temperature, it is possible to reduce the film stress lower than the conventional case by forming a film at as a high temperature as 640° C. or more. At this time, when the film stress decreases, the total charge amount Qbd regulating dielectric breakdown of the film increases, improving reliability of the gate insulating film. It is therefore possible to set the film stress of the gate electrode at 200 MPA or less in terms of absolute value by forming the gate electrode at 640° C. or more.

摘要翻译： 本发明提供一种半导体器件及其制造方法，其通过将由多晶硅膜形成的栅电极的膜应力抑制到总电荷量Qbd而提高了栅绝缘膜的可靠性。 由于膜应力与成膜温度密切相关，因此通过在640℃以上的高温下形成膜，可以将膜应力降低到比现有的情况。 此时，当薄膜应力降低时，膜的电荷量Qbd调节电介质击穿的增加，提高了栅极绝缘膜的可靠性。 因此，通过在640℃以上形成栅电极，能够将栅电极的膜应力设定为绝对值的200MPA以下。

公开(公告)号：US06713824B1

公开(公告)日：2004-03-30

申请号：US09459913

申请日：1999-12-14

申请人： Yuuichi Mikata ,  Shuji Katsui ,  Hiroshi Akahori

发明人： Yuuichi Mikata ,  Shuji Katsui ,  Hiroshi Akahori

IPC分类号： H01L2976

CPC分类号： H01L29/66825 ,  C23C16/24 ,  H01L21/28035 ,  H01L29/4916

摘要： The present invention provides a semiconductor device and a method of manufacturing the same improved in reliability of a gate insulating film by increasing a total charge amount Qbd by suppressing a film stress of a gate electrode formed of a polysilicon film, to a low value. Since the film stress is closely related to a film formation temperature, it is possible to reduce the film stress lower than the conventional case by forming a film at as a high temperature as 640° C. or more. At this time, when the film stress decreases, the total charge amount Qbd regulating dielectric breakdown of the film increases, improving reliability of the gate insulating film. It is therefore possible to set the film stress of the gate electrode at 200 MPA or less in terms of absolute value by forming the gate electrode at 640° C. or more.

公开(公告)号：US5766785A

公开(公告)日：1998-06-16

申请号：US506134

申请日：1995-07-24

申请人： Yuuichi Mikata ,  Takashi Nakao ,  Yoshitaka Tsunashima

发明人： Yuuichi Mikata ,  Takashi Nakao ,  Yoshitaka Tsunashima

IPC分类号： H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/00

CPC分类号： H01L21/31116 ,  Y10S438/906

摘要： To react the surfaces of a plurality of semiconductor substrates to be treated to reducing gas in a treating chamber, their corresponding members having surfaces opposite to those surfaces of the substrates on which semiconductor devices are to be manufactured, are arranged. The amount of reducing agent supplied to the surfaces of the substrates is controlled by controlling the reaction of the surfaces of the members to the reducing gas, and the progress of the reducing reaction to each of the substrates is controlled accordingly.

摘要翻译： 为了使待处理的多个半导体衬底的表面与处理室中的还原气体反应，它们的相应构件具有与要制造半导体器件的衬底的那些表面相反的表面。 通过控制构件的表面与还原气体的反应来控制供给到基板的表面的还原剂的量，并且相应地控制对各基板的还原反应的进行。

公开(公告)号：US5838056A

公开(公告)日：1998-11-17

申请号：US777100

申请日：1996-12-30

申请人： Yoshio Kasai ,  Takashi Suzuki ,  Takanori Tsuda ,  Yuuichi Mikata ,  Hiroshi Akahori ,  Akihito Yamamoto

发明人： Yoshio Kasai ,  Takashi Suzuki ,  Takanori Tsuda ,  Yuuichi Mikata ,  Hiroshi Akahori ,  Akihito Yamamoto

IPC分类号： H01L27/04 ,  H01L21/28 ,  H01L21/318 ,  H01L21/334 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L23/58

CPC分类号： H01L29/66181 ,  H01L21/28167 ,  H01L21/3185

摘要： A semiconductor wafer having an impurity diffusion layer formed in an inner surface of a trench is cleaned. The semiconductor wafer is inserted into a furnace, and NH.sub.3 gas is introduced into the furnace in the low-pressure condition to create an atmosphere in which the temperature is set at 800.degree. C. to 1200.degree. C. and the partial pressures of H.sub.2 O and O.sub.2 are set at 1.times.10.sup.-4 Torr or less. A natural oxide film formed on the inner surface of the trench is removed, and substantially at the same time, a thermal nitride film is formed on the impurity diffusion layer. Then, a CVD silicon nitride film is formed on the thermal nitride film without exposing the thermal nitride film to the outside air in the same furnace. Next, a silicon oxide film is formed on the CVD nitride film. As a result, a composite insulative film formed of the thermal nitride film, CVD silicon nitride film and silicon oxide film is obtained. Then, an electrode for the composite insulative film is formed in the trench.

摘要翻译： 清洁在沟槽的内表面形成有杂质扩散层的半导体晶片。 将半导体晶片插入炉中，并将NH 3气体在低压条件下引入炉中以产生温度设定在800℃至1200℃的气氛，并且将H 2 O和 O2设定在1×10-4乇或更低。 去除形成在沟槽内表面上的自然氧化膜，并且基本上同时在杂质扩散层上形成氮化氮膜。 然后，在氮化硅膜上形成CVD氮化硅膜，而不会在同一炉内将氮化氮膜暴露于外部空气。 接着，在CVD氮化膜上形成氧化硅膜。 结果，得到由氮化物膜，CVD氮化硅膜和氧化硅膜形成的复合绝缘膜。 然后，在沟槽中形成用于复合绝缘膜的电极。

公开(公告)号：US06171977B2

公开(公告)日：2001-01-09

申请号：US08777098

申请日：1996-12-30

申请人： Yoshio Kasai ,  Takashi Suzuki ,  Takanori Tsuda ,  Yuuichi Mikata ,  Hiroshi Akahori ,  Akihito Yamamoto

发明人： Yoshio Kasai ,  Takashi Suzuki ,  Takanori Tsuda ,  Yuuichi Mikata ,  Hiroshi Akahori ,  Akihito Yamamoto

IPC分类号： H01L2131

CPC分类号： H01L29/66181 ,  H01L21/28167 ,  H01L21/3185

摘要： A semiconductor wafer having an impurity diffusion layer formed in an inner surface of a trench is cleaned. The semiconductor wafer is inserted into a furnace, and NH3 gas is introduced into the furnace in the low-pressure condition to create an atmosphere in which the temperature is set at 800° C. to 1200° C. and the partial pressures of H2O and O2 are set at 1×10−4 Torr or less. A natural oxide film formed on the inner surface of the trench is removed, and substantially at the same time, a thermal nitride film is formed on the impurity diffusion layer. Then, a CVD silicon nitride film is formed on the thermal nitride film without exposing the thermal nitride film to the outside air in the same furnace. Next, a silicon oxide film is formed on the CVD nitride film. As a result, a composite insulative film formed of the thermal nitride film, CVD silicon nitride film and silicon oxide film is obtained. Then, an electrode for the composite insulative film is formed in the trench.

摘要翻译： 清洁在沟槽的内表面形成有杂质扩散层的半导体晶片。 将半导体晶片插入炉中，并将NH 3气体在低压条件下引入炉中以产生温度设定在800℃至1200℃的气氛，并且将H 2 O和 O2设定在1×10-4乇或更低。 去除形成在沟槽内表面上的自然氧化膜，并且基本上同时在杂质扩散层上形成氮化氮膜。 然后，在氮化硅膜上形成CVD氮化硅膜，而不会在同一炉内将氮化氮膜暴露于外部空气。 接着，在CVD氮化膜上形成氧化硅膜。 结果，得到由氮化物膜，CVD氮化硅膜和氧化硅膜形成的复合绝缘膜。 然后，在沟槽中形成用于复合绝缘膜的电极。

公开(公告)号：US5879447A

公开(公告)日：1999-03-09

申请号：US478765

申请日：1995-06-07

申请人： Takako Okada ,  Shigeru Kambayashi ,  Moto Yabuki ,  Shinji Onga ,  Yoshitaka Tsunashima ,  Yuuichi Mikata ,  Haruo Okano

发明人： Takako Okada ,  Shigeru Kambayashi ,  Moto Yabuki ,  Shinji Onga ,  Yoshitaka Tsunashima ,  Yuuichi Mikata ,  Haruo Okano

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/28 ,  H01L21/329 ,  H01L21/334 ,  H01L21/336 ,  H01L21/822 ,  H01L21/8249 ,  H01L27/04 ,  H01L27/06 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  C30B19/00

CPC分类号： H01L28/82 ,  H01L21/2022 ,  H01L21/28035 ,  H01L29/6609 ,  H01L29/66181 ,  H01L29/66613 ,  H01L29/66628 ,  H01L29/66651 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678 ,  H01L29/49 ,  H01L29/78654

摘要： A single crystal and a polycrystal having an excellent crystal quality and providing a highly reliable semiconductor device are formed by solid phase growth at low temperatures. An amorphous thin film is deposited on a substrate such that an average inter-atomic distance of main constituent element of the amorphous thin film is 1.02 times or more of an average inter-atomic distance of the elements in single crystal, and crystallization energy is applied to the amorphous thin film to perform solid phase growth to thereby form a single crystal. In another embodiment of the present invention, an amorphous semiconductor thin film is formed on a substrate or an insulating film such that an average inter-atomic distance distribution of main constituent element of the film substantially coincides with an average inter-atomic distance distribution of the element in a single crystal, and crystallization energy is applied to the amorphous semiconductor thin film to cause solid phase growth to thereby form a single crystalline semiconductor thin film.