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    Magnetoresistive effect device and magnetic memory
    3.
    发明授权
    Magnetoresistive effect device and magnetic memory 有权
    磁阻效应器和磁记忆体

    公开(公告)号：US08223533B2

    公开(公告)日：2012-07-17

    申请号：US12556883

    申请日：2009-09-10

    申请人： Jyunichi Ozeki ,  Naoharu Shimomura ,  Sumio Ikegawa ,  Tadashi Kai ,  Masahiko Nakayama ,  Hisanori Aikawa ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Eiji Kitagawa ,  Masatoshi Yoshikawa

    发明人： Jyunichi Ozeki ,  Naoharu Shimomura ,  Sumio Ikegawa ,  Tadashi Kai ,  Masahiko Nakayama ,  Hisanori Aikawa ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Eiji Kitagawa ,  Masatoshi Yoshikawa

    IPC分类号： G11C11/00

    CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3277 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

    摘要： A magnetic memory includes a magnetoresistive effect device comprising: a first ferromagnetic layer that has magnetic anisotropy in a direction perpendicular to a film plane thereof; a first nonmagnetic layer that is provided on the first ferromagnetic layer; a first reference layer that is provided on the first nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, has magnetization antiparallel to a magnetization direction of the first ferromagnetic layer, and has a film thickness that is 1/5.2 to 1/1.5 times as large as a film thickness of the first ferromagnetic layer in the direction perpendicular to the film plane; a second nonmagnetic layer that is provided on the first reference layer; and a storage layer that is provided on the second nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, and has a magnetization direction varied by spin-polarized electrons caused by flowing the current to the magnetoresistive effect device.

    摘要翻译： 磁存储器包括磁阻效应器件，包括：在垂直于其膜平面的方向上具有磁各向异性的第一铁磁层; 设置在第一铁磁层上的第一非磁性层; 设置在第一非磁性层上的第一参考层在垂直于其膜平面的方向上具有磁各向异性，具有与第一铁磁层的磁化方向反平行的磁化，并且具有1 / 5.2〜 在第一铁磁层的垂直于膜平面的方向上的膜厚度的1/15倍; 设置在第一参考层上的第二非磁性层; 并且设置在第二非磁性层上的存储层在垂直于其膜平面的方向上具有磁各向异性，并且由于使电流流向磁阻效应器而引起的由自旋极化电子变化的磁化方向。

    MAGNETORESISTIVE DEVICE AND MAGNETIC RANDOM ACCESS MEMORY
    6.
    发明申请
    MAGNETORESISTIVE DEVICE AND MAGNETIC RANDOM ACCESS MEMORY 有权
    磁性器件和磁性随机存取存储器

    公开(公告)号：US20100238717A1

    公开(公告)日：2010-09-23

    申请号：US12715699

    申请日：2010-03-02

    申请人： Masahiko NAKAYAMA ,  Hiroaki Yoda ,  Tadashi Kai ,  Hisanori Aikawa ,  Katsuya Nishiyama ,  Jyunichi Ozeki

    发明人： Masahiko NAKAYAMA ,  Hiroaki Yoda ,  Tadashi Kai ,  Hisanori Aikawa ,  Katsuya Nishiyama ,  Jyunichi Ozeki

    IPC分类号： G11C11/00 ,  G11B5/33

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C7/04 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/126 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01L43/10

    摘要： A magnetoresistive device includes: a magnetic recording layer including a first magnetic layer having perpendicular magnetic anisotropy, and a second magnetic layer having in-plane magnetic anisotropy and being exchange-coupled to the first magnetic layer, Curie temperature of the second magnetic layer being lower than Curie temperature of the first magnetic layer, and the magnetic recording layer having a magnetization direction perpendicular to a film plane; a magnetic reference layer having a magnetization direction which is perpendicular to a film plane and is invariable; and a nonmagnetic layer provided between the magnetic recording layer and the magnetic reference layer. The magnetization direction of the magnetic recording layer is changeable by spin-polarized electrons caused by flowing current between the magnetic recording layer and the magnetic reference layer in a direction perpendicular to the film plane.

    摘要翻译： 磁阻器件包括：包括具有垂直磁各向异性的第一磁性层的磁记录层和具有面内磁各向异性并与第一磁性层交换耦合的第二磁性层，第二磁性层的居里温度较低 第一磁性层的居里温度，磁化方向垂直于膜面的磁记录层; 具有垂直于膜平面的磁化方向且不变的磁参考层; 以及设置在磁记录层和磁参考层之间的非磁性层。 磁记录层的磁化方向可以由磁记录层和磁参考层之间的流动电流在垂直于膜平面的方向上引起的自旋极化电子改变。

    Magnetoresistive device and magnetic random access memory
    7.
    发明授权
    Magnetoresistive device and magnetic random access memory 有权
    磁阻器件和磁性随机存取存储器

    公开(公告)号：US08169817B2

    公开(公告)日：2012-05-01

    申请号：US12715699

    申请日：2010-03-02

    申请人： Masahiko Nakayama ,  Hiroaki Yoda ,  Tadashi Kai ,  Hisanori Aikawa ,  Katsuya Nishiyama ,  Jyunichi Ozeki

    发明人： Masahiko Nakayama ,  Hiroaki Yoda ,  Tadashi Kai ,  Hisanori Aikawa ,  Katsuya Nishiyama ,  Jyunichi Ozeki

    IPC分类号： G11C11/00

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C7/04 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/126 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01F10/3295 ,  H01L43/10

    摘要： A magnetoresistive device includes: a magnetic recording layer including a first magnetic layer having perpendicular magnetic anisotropy, and a second magnetic layer having in-plane magnetic anisotropy and being exchange-coupled to the first magnetic layer, Curie temperature of the second magnetic layer being lower than Curie temperature of the first magnetic layer, and the magnetic recording layer having a magnetization direction perpendicular to a film plane; a magnetic reference layer having a magnetization direction which is perpendicular to a film plane and is invariable; and a nonmagnetic layer provided between the magnetic recording layer and the magnetic reference layer. The magnetization direction of the magnetic recording layer is changeable by spin-polarized electrons caused by flowing current between the magnetic recording layer and the magnetic reference layer in a direction perpendicular to the film plane.

    摘要翻译： 磁阻器件包括：包括具有垂直磁各向异性的第一磁性层的磁记录层和具有面内磁各向异性并与第一磁性层交换耦合的第二磁性层，第二磁性层的居里温度较低 第一磁性层的居里温度，磁化方向垂直于膜面的磁记录层; 具有垂直于膜平面的磁化方向且不变的磁参考层; 以及设置在磁记录层和磁参考层之间的非磁性层。 磁记录层的磁化方向可以由磁记录层和磁参考层之间的流动电流在垂直于膜平面的方向上引起的自旋极化电子改变。

    MAGNETORESISTIVE ELEMENT
    8.
    发明申请
    MAGNETORESISTIVE ELEMENT 有权
    磁电元件

    公开(公告)号：US20090140358A1

    公开(公告)日：2009-06-04

    申请号：US12364132

    申请日：2009-02-02

    申请人： Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Yoshiaki Fukuzumi ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Hiroaki Yoda

    发明人： Masahiko Nakayama ,  Tadashi Kai ,  Tatsuya Kishi ,  Yoshiaki Fukuzumi ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Hiroaki Yoda

    IPC分类号： H01L43/08

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  Y10T428/1121

    摘要： A magnetoresistive element includes a first ferromagnetic layer having a first magnetization, the first magnetization having a first pattern when the magnetoresistive element is half-selected during a first data write, a second pattern when the magnetoresistive element is selected during a second data write, and a third pattern of residual magnetization, the first pattern being different from the second and third pattern, a second ferromagnetic layer having a second magnetization, and a nonmagnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and having a tunnel conductance changing dependent on a relative angle between the first magnetization and the second magnetization.

    摘要翻译： 磁阻元件包括具有第一磁化的第一铁磁层，当在第一数据写入期间磁阻元件被半选择时，第一磁化具有第一图案，当在第二数据写入期间选择磁阻元件时的第二图案;以及 剩余磁化的第三图案，第一图案不同于第二和第三图案，具有第二磁化的第二铁磁层，以及布置在第一铁磁层和第二铁磁层之间并且具有隧道电导变化依赖性的非磁性层 在第一磁化和第二磁化之间的相对角度上。

    MAGNETORESISTIVE ELEMENT
    9.
    发明申请
    MAGNETORESISTIVE ELEMENT 有权
    磁电元件

    公开(公告)号：US20080131732A1

    公开(公告)日：2008-06-05

    申请号：US12019743

    申请日：2008-01-25

    申请人： Masahiko NAKAYAMA ,  Tadashi Kai ,  Tatsuya Kishi ,  Yoshiaki Fukuzumi ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Hiroaki Yoda

    发明人： Masahiko NAKAYAMA ,  Tadashi Kai ,  Tatsuya Kishi ,  Yoshiaki Fukuzumi ,  Toshihiko Nagase ,  Sumio Ikegawa ,  Hiroaki Yoda

    IPC分类号： G11B5/39

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  Y10T428/1121

    摘要： A magnetoresistive element includes a first ferromagnetic layer having a first magnetization, the first magnetization having a first pattern when the magnetoresistive element is half-selected during a first data write, a second pattern when the magnetoresistive element is selected during a second data write, and a third pattern of residual magnetization, the first pattern being different from the second and third pattern, a second ferromagnetic layer having a second magnetization, and a nonmagnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and having a tunnel conductance changing dependent on a relative angle between the first magnetization and the second magnetization.

    摘要翻译： 磁阻元件包括具有第一磁化的第一铁磁层，当在第一数据写入期间磁阻元件被半选择时，第一磁化具有第一图案，当在第二数据写入期间选择磁阻元件时的第二图案，以及 剩余磁化的第三图案，第一图案不同于第二和第三图案，具有第二磁化的第二铁磁层，以及布置在第一铁磁层和第二铁磁层之间并且具有隧道电导变化依赖性的非磁性层 在第一磁化和第二磁化之间的相对角度上。

    Magnetic memory device and write method of magnetic memory device
    10.
    发明申请
    Magnetic memory device and write method of magnetic memory device 有权
    磁存储器件和磁存储器件的写入方法

    公开(公告)号：US20060198184A1

    公开(公告)日：2006-09-07

    申请号：US11255111

    申请日：2005-10-21

    申请人： Hiroaki Yoda ,  Tadashi Kai ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Tatsuya Kishi

    发明人： Hiroaki Yoda ,  Tadashi Kai ,  Masahiko Nakayama ,  Sumio Ikegawa ,  Tatsuya Kishi

    IPC分类号： G11C11/14

    CPC分类号： G11C11/16

    摘要： A magnetic memory device includes a first write wiring which runs in a first direction, a second write wiring which runs in a second direction different from the first direction, and a magnetoresistive element which is arranged at an intersection between the first and second write wirings, has a fixed layer, a recording layer, and a magnetoresistive layer sandwiched between the fixed layer and the recording layer, and has an axis of easy magnetization obliquely with respect to the first and second directions, the recording layer including a first ferromagnetic layer, a second ferromagnetic layer, and a first nonmagnetic layer sandwiched between the first and second ferromagnetic layers, in which first magnetization of the first ferromagnetic layer and second magnetization of the second ferromagnetic layer are ferromagnetically coupled, and a ferro-coupling constant C of a ferromagnetic coupling is 0.0001 erg/cm2≦C≦0.2 erg/cm2.

    摘要翻译： 一种磁存储器件包括沿第一方向延伸的第一写入布线，沿与第一方向不同的第二方向延伸的第二写入布线和布置在第一和第二写入布线之间的交叉点处的磁阻元件， 具有夹在固定层和记录层之间的固定层，记录层和磁阻层，并且具有相对于第一和第二方向倾斜的易磁化轴，记录层包括第一铁磁层， 第一铁磁层和夹在第一和第二铁磁层之间的第一非磁性层，其中第一铁磁层的第一磁化和第二铁磁层的第二磁化被铁磁耦合，并且铁磁耦合的铁磁耦合常数C 为0.0001 erg / cm 2 <= C <= 0.2 ERG / CM 2。