公开(公告)号：US06790675B2

公开(公告)日：2004-09-14

申请号：US10391412

申请日：2003-03-18

申请人： Seiji Adachi ,  Hironori Wakana ,  Yoshihiro Ishimaru ,  Masahiro Horibe ,  Osami Horibe ,  Yoshinobu Tarutani ,  Keiichi Tanabe

发明人： Seiji Adachi ,  Hironori Wakana ,  Yoshihiro Ishimaru ,  Masahiro Horibe ,  Osami Horibe ,  Yoshinobu Tarutani ,  Keiichi Tanabe

IPC分类号： H01L2100

CPC分类号： H01L39/2496 ,  Y10T29/49014

摘要： A method of fabricating a Josephson device includes the steps of forming a first superconducting layer and forming a second superconducting layer to form a Josephson junction therebetween, wherein the step of forming the second superconducting layer includes the steps of conducting a first step of forming the second superconducting layer with improved uniformity and conducting a second step of forming the second superconducting layer on the second superconducting layer formed in the first step with improved film quality.

摘要翻译： 一种制造约瑟夫逊器件的方法包括以下步骤：形成第一超导层并形成第二超导层以在其间形成约瑟夫逊结，其中形成第二超导层的步骤包括以下步骤：进行形成第二超导层的第二步骤 超导层，并且在第一步骤中形成的第二超导层上形成第二超导层并且改善膜质量的第二步骤。

公开(公告)号：US20060247131A1

公开(公告)日：2006-11-02

申请号：US11331179

申请日：2006-01-13

申请人： Masahiro Horibe ,  Hideo Suzuki ,  Yoshihiro Ishimaru ,  Hironori Wakana ,  Keiichi Tanabe

发明人： Masahiro Horibe ,  Hideo Suzuki ,  Yoshihiro Ishimaru ,  Hironori Wakana ,  Keiichi Tanabe

IPC分类号： H01L39/22 ,  H01L29/06

CPC分类号： H01L27/18 ,  H01L39/2496

摘要： At least two ramp-edge-structure Josephson junctions having different critical current densities to one another are provided on a substrate.

摘要翻译： 在衬底上提供具有彼此具有不同临界电流密度的至少两个斜坡边缘结构约瑟夫逊结。

公开(公告)号：US07091515B2

公开(公告)日：2006-08-15

申请号：US10809924

申请日：2004-03-26

申请人： Masahiro Horibe ,  Hideo Suzuki ,  Yoshihiro Ishimaru ,  Hironori Wakana ,  Keiichi Tanabe

发明人： Masahiro Horibe ,  Hideo Suzuki ,  Yoshihiro Ishimaru ,  Hironori Wakana ,  Keiichi Tanabe

IPC分类号： H01L29/06

CPC分类号： H01L27/18 ,  H01L39/2496

摘要： At least two ramp-edge-structure Josephson junctions having different critical current densities to one another are provided on a substrate.

公开(公告)号：US20050231196A1

公开(公告)日：2005-10-20

申请号：US10519719

申请日：2003-08-05

申请人： Yoshinobu Tarutani ,  Masahiro Horibe ,  Keiichi Tanabe

发明人： Yoshinobu Tarutani ,  Masahiro Horibe ,  Keiichi Tanabe

IPC分类号： H01L39/22 ,  H03F19/00 ,  H03K17/92 ,  H03K19/195 ,  G01R33/02

CPC分类号： H03K19/1954 ,  Y10S505/846

摘要： To obtain a superconducting driver circuit which can obtain an output voltage of several millvolts or above, can use a DC power source as a driving power source, can form no capacitance between it and a ground plane, and has a small occupation area, the superconducting driver circuit is constructed by superconducting flux quantum interference devices (SQUIDs) each constructing a closed loop having as components two superconducting junctions and an inductor. The SQUIDs share the inductors and are connected in series in three or more stages.

摘要翻译： 为了获得能够获得几毫伏以上的输出电压的超导驱动电路，可以使用直流电源作为驱动电源，可以在其与地平面之间形成电容，占空比小，超导 驱动器电路由超导通量量子干涉装置（SQUID）构成，每个构造一个闭环，该闭环具有两个超导结和电感。 SQUIDs共享电感器，并在三个或更多个阶段串联连接。

公开(公告)号：US07095227B2

公开(公告)日：2006-08-22

申请号：US10519719

申请日：2003-08-05

申请人： Yoshinobu Tarutani ,  Masahiro Horibe ,  Keiichi Tanabe

发明人： Yoshinobu Tarutani ,  Masahiro Horibe ,  Keiichi Tanabe

IPC分类号： G01R33/02

CPC分类号： H03K19/1954 ,  Y10S505/846

摘要： To obtain a superconducting driver circuit which can obtain an output voltage of several millvolts or above, can use a DC power source as a driving power source, can form no capacitance between it and a ground plane, and has a small occupation area, the superconducting driver circuit is constructed by superconducting flux quantum interference devices (SQUIDs) each constructing a closed loop having as components two superconducting junctions and an inductor. The SQUIDs share the inductors and are connected in series in three or more stages.

摘要翻译： 为了获得能够获得几毫伏以上的输出电压的超导驱动电路，可以使用直流电源作为驱动电源，可以在其与地平面之间形成电容，占空比小，超导 驱动器电路由超导通量量子干涉装置（SQUID）构成，每个构造一个闭环，该闭环具有两个超导结和电感。 SQUIDs共享电感器，并在三个或更多个阶段串联连接。

公开(公告)号：US07300909B2

公开(公告)日：2007-11-27

申请号：US10809919

申请日：2004-03-26

申请人： Tsunehiro Hato ,  Masahiro Horibe ,  Keiichi Tanabe

发明人： Tsunehiro Hato ,  Masahiro Horibe ,  Keiichi Tanabe

IPC分类号： H01B1/00

CPC分类号： H01L39/225 ,  H01L27/18

摘要： A first Josephson junction in a Single Flux Quantum circuit (SFQ circuit) and a second Josephson junction in an interface circuit (latch driver circuit) are formed with junction materials different from each other, and the junction materials are selected so that the hysteresis of the first Josephson junction in a current-voltage characteristic is smaller than the hysteresis of the second Josephson junction in a current-voltage characteristic.

摘要翻译： 单通道量子电路（SFQ电路）中的第一个约瑟夫逊结和接口电路（锁存驱动器电路）中的第二个约瑟夫逊结形成为具有彼此不同的连接材料，并且连接材料被选择为使得 电流 - 电压特性中的第一约瑟夫逊结小于电流 - 电压特性中第二约瑟夫逊结的滞后。

公开(公告)号：US07323711B2

公开(公告)日：2008-01-29

申请号：US10899313

申请日：2004-07-27

申请人： Hideo Suzuki ,  Masahiro Horibe ,  Keiichi Tanabe

发明人： Hideo Suzuki ,  Masahiro Horibe ,  Keiichi Tanabe

IPC分类号： H01L29/06

CPC分类号： H01L39/225 ,  H01L39/2496

摘要： A high-temperature superconductive device is disclosed, including a ramp-edge junction. The ramp-edge junction includes a first electrode layer (5) that defines the size of the ramp-edge junction and a second electrode layer (6). The width of the second electrode layer (6) is greater than the width of the first electrode layer (5). The first electrode layer (5) and the second electrode layer (6) touch in part, and are separated via a first insulation layer (7) in remaining part. Because the ramp-edge junction includes the first electrode layer (5) and the second electrode layer (6), the inductance of the ramp-edge junction can be reduced with the critical current density Jc being kept at a high level.

摘要翻译： 公开了一种高温超导装置，包括斜坡边缘连接。 斜坡边缘结包括限定斜边结的大小的第一电极层（5）和第二电极层（6）。 第二电极层（6）的宽度大于第一电极层（5）的宽度。 第一电极层（5）和第二电极层（6）部分接触，并通过第一绝缘层（7）剩余部分分离。 因为斜坡边缘结包括第一电极层（5）和第二电极层（6），所以斜坡边缘结的电感可以随着临时电流密度J C被保持而减小 在高层。

公开(公告)号：US20050043185A1

公开(公告)日：2005-02-24

申请号：US10899313

申请日：2004-07-27

申请人： Hideo Suzuki ,  Masahiro Horibe ,  Keiichi Tanabe

发明人： Hideo Suzuki ,  Masahiro Horibe ,  Keiichi Tanabe

IPC分类号： H01L39/22 ,  H01B1/00 ,  H01L39/24

CPC分类号： H01L39/225 ,  H01L39/2496

摘要： A high-temperature superconductive device is disclosed, including a ramp-edge junction. The ramp-edge junction includes a first electrode layer (5) that defines the size of the ramp-edge junction and a second electrode layer (6). The width of the second electrode layer (6) is greater than the width of the first electrode layer (5). The first electrode layer (5) and the second electrode layer (6) touch in part, and are separated via a first insulation layer (7) in remaining part. Because the ramp-edge junction includes the first electrode layer (5) and the second electrode layer (6), the inductance of the ramp-edge junction can be reduced with the critical current density Jc being kept at a high level.

摘要翻译： 公开了一种高温超导装置，包括斜坡边缘连接。 斜坡边缘结包括限定斜边结的大小的第一电极层（5）和第二电极层（6）。 第二电极层（6）的宽度大于第一电极层（5）的宽度。 第一电极层（5）和第二电极层（6）部分接触，并且通过剩余部分中的第一绝缘层（7）分离。 由于斜坡边缘包括第一电极层（5）和第二电极层（6），因此临界电流密度Jc保持在高电平时可以降低斜坡边缘结的电感。

公开(公告)号：US20050029512A1

公开(公告)日：2005-02-10

申请号：US10809919

申请日：2004-03-26

申请人： Tsunehiro Hato ,  Masahiro Horibe ,  Keiichi Tanabe

发明人： Tsunehiro Hato ,  Masahiro Horibe ,  Keiichi Tanabe

IPC分类号： H01L27/18 ,  H01L39/22 ,  H01L29/06

CPC分类号： H01L39/225 ,  H01L27/18

摘要： A first Josephson junction in a Single Flux Quantum circuit (SFQ circuit) and a second Josephson junction in an interface circuit (latch driver circuit) are formed with junction materials different from each other, and the junction materials are selected so that the hysteresis of the first Josephson junction in a current-voltage characteristic is smaller than the hysteresis of the second Josephson junction in a current-voltage characteristic.

摘要翻译： 单通道量子电路（SFQ电路）中的第一个约瑟夫逊结和接口电路（锁存驱动器电路）中的第二个约瑟夫逊结形成为具有彼此不同的连接材料，并且连接材料被选择为使得 电流 - 电压特性中的第一约瑟夫逊结小于电流 - 电压特性中第二约瑟夫逊结的滞后。

公开(公告)号：US07948081B2

公开(公告)日：2011-05-24

申请号：US11041891

申请日：2005-01-25

申请人： Akio Kawabata ,  Mizuhisa Nihei ,  Masahiro Horibe

发明人： Akio Kawabata ,  Mizuhisa Nihei ,  Masahiro Horibe

IPC分类号： H01L23/52

CPC分类号： H01L21/76879 ,  B82Y10/00 ,  H01L21/76805 ,  H01L23/3128 ,  H01L23/373 ,  H01L23/4827 ,  H01L23/485 ,  H01L23/49816 ,  H01L23/5226 ,  H01L23/53276 ,  H01L24/32 ,  H01L2221/1094 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32057 ,  H01L2224/73253 ,  H01L2224/83385 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/15174 ,  H01L2924/15311 ,  Y10S977/833 ,  Y10S977/936 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2224/0401

摘要： A semiconductor device uses a carbon nanotube structure, which reduces an electric resistance and a thermal resistance by increasing a density of the carbon nanotubes. An insulation film covers a first electrically conductive material. A second electrically conductive material is provided on the insulation film. A plurality of carbon nanotubes extend through the insulation film by being filled in an opening part that exposes the first electrically conductive material. The carbon nanotubes electrically connect the first electrically conductive material and the second electrically conductive material to each other. Ends of the carbon nanotubes are fixed to a recessed part provided on a surface of the first electrically conductive material.

摘要翻译： 半导体器件使用碳纳米管结构，其通过增加碳纳米管的密度来降低电阻和耐热性。 绝缘膜覆盖第一导电材料。 第二导电材料设置在绝缘膜上。 多个碳纳米管通过填充在露出第一导电材料的开口部分中而延伸穿过绝缘膜。 碳纳米管将第一导电材料和第二导电材料彼此电连接。 碳纳米管的端部被固定到设置在第一导电材料的表面上的凹部。