摘要:
The objective is to provide a high-pressure treatment apparatus with which the pressure or temperature in a treatment chamber can be efficiently adjusted in a short period of time without an overall significant increase in the size or complication of the apparatus. The high-pressure treatment apparatus has a pressure-resistant container having pressure-resistant walls surrounding a treatment chamber, a lid member that closes an open end of the pressure-resistant container, a supply means that supplies a process fluid into the treatment chamber, a partition wall that is thinner than the pressure-resistant wall and is provided along the inside surface of said pressure-resistant container to form a partitioned chamber with said inside surface, and a heat transfer control means. Said heat transfer control means controls heat transfer between said treatment chamber and said partitioned chamber by heating or cooling a heating medium outside the container and feeding said heating medium into said partitioned chamber.
摘要:
When the hatch of a substrate washing chamber 5 is opened to receive a substrate, certain valves are closed, and one valve is opened, to supply CO2 to purge the substrate washing chamber 5 to and exclude air. When the hatch is closed, another valve is opened to vent substrate washing chamber 5 so that the CO2 expels any gas and unwanted air from the substrate washing chamber 5 and the conduits. Thereafter, supercritical CO2 is used to wash the substrate and clean the circulation line. The flow of supercritical CO2 is sent to the substrate washing chamber 5. After flowing through the circulation line, including a circulation channel 11, it passes through a bypass channel 12 to a decompressor 7. Any chemicals or organic substances left in the circulation line are continuously sent to separation/recovery bath 8 together with the flow.
摘要:
The objective is to provide a high-pressure treatment apparatus with which the pressure or temperature in a treatment chamber can be efficiently adjusted in a short period of time without an overall significant increase in the size or complication of the apparatus. The high-pressure treatment apparatus has a pressure-resistant container having pressure-resistant walls surrounding a treatment chamber, a lid member that closes an open end of the pressure-resistant container, a supply means that supplies a process fluid into the treatment chamber, a partition wall that is thinner than the pressure-resistant wall and is provided along the inside surface of said pressure-resistant container to form a partitioned chamber with said inside surface, and a heat transfer control means. Said heat transfer control means controls heat transfer between said treatment chamber and said partitioned chamber by heating or cooling a heating medium outside the container and feeding said heating medium into said partitioned chamber.
摘要:
Disclosed is a process for producing porous materials by replacing a first solvent in a wet material containing the first solvent with a second solvent in a high pressure condition and drying the resulting wet material which process comprises a mixed solvent feeding step for feeding a mixed solvent composed of a solvent identical to or of the same kind as the first solvent and the second solvent to the wet material.
摘要:
Disclosed is a process for producing porous materials by replacing a first solvent in a wet material containing the first solvent with a second solvent in a high pressure condition and drying the resulting wet material which process comprises a mixed solvent feeding step for feeding a mixed solvent composed of a solvent identical to or of the same kind as the first solvent and the second solvent to the wet material.
摘要:
When the hatch of a substrate washing chamber 5 is opened to receive a substrate, certain valves are closed, and a valve is opened, supply CO2 to purge the substrate washing chamber 5 to and exclude air. When the hatch is closed, another valve is opened to vent substrate washing chamber 5 so that the CO2 expels any gas and unwanted air from the substrate washing chamber 5 and the conduits. Thereafter, super critical CO2 is used to wash the substrate and clean the circulation line. The flow of supercritical CO2 is sent to the substrate washing chamber 5. After flowing through the circulation line, including a circulation channel 11, it passes through a bypass channel 12 to a decompressor 7. Any chemicals or organic substances left in the circulation line are continuously sent to a separation/recover bath 8 together with the flow.
摘要:
A high-pressure processing apparatus includes a processing vessel including a processing chamber formed therein to perform a certain process onto an object in the processing chamber; fluid feeding means which feeds a high-pressure fluid into the processing chamber; fluid discharging means which discharges the high-pressure fluid from the processing chamber; an agitating unit which is arranged in the processing chamber and is operative to flow the high-pressure fluid over the object by relative rotation to the processing vessel; a communicating channel which is formed in the processing vessel to communicate inside and outside of the processing chamber; a rotary driving member which is coupled to the agitating unit via a shaft portion provided in the communicating channel; and a sealing portion which is provided between the shaft portion and the processing vessel to disconnect the processing chamber from the rotary driving member. The fluid discharging means includes a fluid discharging port formed in a certain position of the communicating channel closer to the processing chamber than the sealing portion to discharge the high-pressure fluid.
摘要:
There is provided a radio communication device including a radio receiving unit to receive a radio signals, a synchronization unit to detect synchronization based on a result of a correlation for received signals output from the radio receiving unit, and a signal strength output unit to output, as signal strength of the received signals that is RSSI (Received Signal Strength Indicator) value, a level of a correlation signal that is output as a result of the correlation by the synchronization unit.
摘要:
In a semiconductor device, re-wiring is provided on a circuit element formation region of a semiconductor substrate. A columnar electrode for connection with a circuit board is provided on the rewiring. A first insulating film is provided over the semiconductor substrate excluding a connection pad, and a ground potential layer connected to a ground potential is provided on an upper surface of the first insulating film. A re-wiring is provided over the ground potential layer with a second insulating film interposed. The ground potential layer serves as a barrier layer for preventing crosstalk between the re-wiring and circuit element formation region. A thin-film circuit element is provided on the second insulating film, and a second ground potential layer is provided as a second barrier layer over the thin-film circuit element with an insulating film interposed. Re-wiring is provided over the second ground potential layer.
摘要:
In one embodiment a wireless communication device is provided that: acquires a phase rotation angle in the propagation channel which phase rotation angle is contained in a received symbol and that performs rotation compensation of the acquired phase rotation angle for the received symbol; generates a coordinate value of the respective I, Q axis in the signal constellation on which the information of the respective reference signal point is set; for the respective transmission bit, obtains respective probabilities that the transmission bit is 0 and 1 by making a distance determination of the distance between the received symbol after the rotation compensation and the respective reference signal level on only one of the I and Q axes; and makes a likelihood determination of the bit value of the respective transmission bit in accordance with a probability value obtained.