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6 条记录 (耗时 0.018 秒)

    Coil device
    1.
    发明授权
    Coil device 有权
    线圈装置

    公开(公告)号：US06262651B1

    公开(公告)日：2001-07-17

    申请号：US09409283

    申请日：1999-09-30

    申请人： Masami Miyamoto ,  Yoshiyuki Suzuki ,  Yoshihiro Mochizuki ,  Tetsuya Suzuki

    发明人： Masami Miyamoto ,  Yoshiyuki Suzuki ,  Yoshihiro Mochizuki ,  Tetsuya Suzuki

    IPC分类号： H01F2702

    CPC分类号： H01F27/29 ,  H01F17/062 ,  H01F27/027

    摘要： A coil device includes a coil body with a wiring coil wound therearound. The coil body is composed of an insulative core cover with a core received therein. An insulative base is provided with terminals, which the coil body is to be mounted thereon. The core cover includes a planar support portion to be attached to the base, and one of the support portion and the base has, at areas in the vicinity of opposite end portions thereof, engagement grooves, and the other has, at areas in the vicinity of opposite ends thereof, ridges engageable with the engagement grooves. Thus, the support portion can be engaged with the base through a combination of the engagement grooves and the ridges.

    摘要翻译： 线圈装置包括绕线圈的线圈体。 线圈体由其中容纳有芯的绝缘芯覆盖层构成。 绝缘基座设有端子，线圈体将要安装在其上。 芯盖包括一个安装在基座上的平面支撑部分，支撑部分和底座中的一个在相对端部附近的区域处具有接合槽，另一个在附近的区域 的相对端，可与接合槽接合的脊。 因此，支撑部可以通过接合槽和脊的组合与基部接合。

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS
    2.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 有权
    半导体器件和衬底加工设备的制造方法

    公开(公告)号：US20090130829A1

    公开(公告)日：2009-05-21

    申请号：US12273028

    申请日：2008-11-18

    申请人： Takaaki Noda ,  Masami Miyamoto ,  Ryuji Yamamoto

    发明人： Takaaki Noda ,  Masami Miyamoto ,  Ryuji Yamamoto

    IPC分类号： H01L21/205

    CPC分类号： H01L21/02661 ,  C23C16/0227 ,  C23C16/24 ,  C23C16/45578 ,  C23C16/54 ,  H01L21/02532 ,  H01L21/0262

    摘要： Provided are a manufacturing method of a semiconductor device and a substrate processing apparatus. The manufacturing method of the semiconductor device includes: loading a plurality of substrates into a reaction vessel, which is configured by a process tube and a manifold that supports the process tube, and arranging the loaded substrates within the reaction vessel; pre-processing the plurality of substrates by supplying a pre-process gas from the manifold side toward the process tube side within the reaction vessel; main-processing the plurality of pre-processed substrates by supplying a main-process gas from the manifold side toward the process tube side within the reaction vessel; and unloading the plurality of main-processed substrates from the reaction vessel, wherein in pre-processing the plurality of substrates, the pre-process gas is supplied from at least one position in an area corresponding to the manifold, and at least one position in an upper area of an area corresponding to a substrate arrangement area.

    摘要翻译： 提供一种半导体器件和衬底处理设备的制造方法。 半导体器件的制造方法包括：将多个基板装载到反应容器中，该反应容器由处理管和支撑处理管的歧管构成，并将负载的基板布置在反应容器内; 通过在反应容器内从歧管侧向处理管侧供给预处理气体来预处理多个基板; 通过在反应容器内从歧管侧向处理管侧供给主工艺气体来主要处理多个预处理衬底; 以及从所述反应容器中卸载所述多个主处理基板，其中在预处理所述多个基板时，所述预处理气体从对应于所述歧管的区域中的至少一个位置供应，并且至少一个位置 与衬底布置区域相对应的区域的上部区域。

    Manufacturing method of semiconductor device and substrate processing apparatus
    3.
    发明授权
    Manufacturing method of semiconductor device and substrate processing apparatus 有权
    半导体器件和衬底处理设备的制造方法

    公开(公告)号：US08716147B2

    公开(公告)日：2014-05-06

    申请号：US12273028

    申请日：2008-11-18

    申请人： Takaaki Noda ,  Masami Miyamoto ,  Ryuji Yamamoto

    发明人： Takaaki Noda ,  Masami Miyamoto ,  Ryuji Yamamoto

    IPC分类号： H01L21/31

    CPC分类号： H01L21/02661 ,  C23C16/0227 ,  C23C16/24 ,  C23C16/45578 ,  C23C16/54 ,  H01L21/02532 ,  H01L21/0262

    摘要： Provided are a manufacturing method of a semiconductor device and a substrate processing apparatus. The manufacturing method of the semiconductor device includes: loading a plurality of substrates into a reaction vessel, which is configured by a process tube and a manifold that supports the process tube, and arranging the loaded substrates within the reaction vessel; pre-processing the plurality of substrates by supplying a pre-process gas from the manifold side toward the process tube side within the reaction vessel; main-processing the plurality of pre-processed substrates by supplying a main-process gas from the manifold side toward the process tube side within the reaction vessel; and unloading the plurality of main-processed substrates from the reaction vessel, wherein in pre-processing the plurality of substrates, the pre-process gas is supplied from at least one position in an area corresponding to the manifold, and at least one position in an upper area of an area corresponding to a substrate arrangement area.

    摘要翻译： 提供一种半导体器件和衬底处理设备的制造方法。 半导体器件的制造方法包括：将多个基板装载到反应容器中，该反应容器由处理管和支撑处理管的歧管构成，并将负载的基板布置在反应容器内; 通过在反应容器内从歧管侧向处理管侧供给预处理气体来预处理多个基板; 通过在反应容器内从歧管侧向处理管侧供给主工艺气体来主要处理多个预处理衬底; 以及从所述反应容器中卸载所述多个主处理基板，其中在预处理所述多个基板时，所述预处理气体从对应于所述歧管的区域中的至少一个位置供应，并且至少一个位置 与衬底布置区域相对应的区域的上部区域。

    Choke coil
    5.
    发明授权
    Choke coil 失效
    扼流线圈

    公开(公告)号：US06617949B2

    公开(公告)日：2003-09-09

    申请号：US10235161

    申请日：2002-09-05

    申请人： Atsushi Ishizuka ,  Masami Miyamoto ,  Masami Nonaka ,  Tadashi Sato

    发明人： Atsushi Ishizuka ,  Masami Miyamoto ,  Masami Nonaka ,  Tadashi Sato

    IPC分类号： H01F2728

    CPC分类号： H03H7/0115 ,  H01F17/00 ,  H01F27/2823 ,  H01F27/324 ,  H01F27/34 ,  H01F29/02 ,  H01F37/00 ,  H01F38/023

    摘要： A choke coil has small difference of wire wound resistances between coils to obtain sufficient unbalance attenuation amount, superior in workability in winding and reduced leakage inductance and line capacity. The choke coil includes first and second coils divided into first and second segments wound on a single spool disposing intermediate insulations layers between respectively adjacent coil segments. The coil segments of the first and second coils are wound alternately. The first coil segment of the first coil and the second coil segment of the second coil being wound in a first winding number and the second coil segment of the second coil and the first coil segment of the second coil being wound in a second winding number. The second winding number being greater than the first winding number for reducing difference of winding resistance between the first and second coils less than or equal to 4%.

    摘要翻译： 扼流线圈在线圈之间的绕线电阻差异小，以获得足够的不平衡衰减量，绕组工作性能优异，漏电感和线路容量降低。 扼流线圈包括分为第一和第二段的第一和第二线圈，其卷绕在单个线轴上，在相邻的线圈段之间设置中间绝缘层。 交替地缠绕第一和第二线圈的线圈段。 第一线圈的第一线圈段和第二线圈的第二线圈段以第一绕组数卷绕，第二线圈的第二线圈段和第二线圈的第一线圈段以第二绕组数卷绕。 第二绕组数大于第一绕组数，用于减小第一和第二线圈之间的绕组电阻差小于或等于4％。