Solid state imaging using a correction parameter for correcting a cross talk between adjacent pixels
    1.
    发明授权
    Solid state imaging using a correction parameter for correcting a cross talk between adjacent pixels 有权
    使用用于校正相邻像素之间的串扰的校正参数的固态成像

    公开(公告)号:US08619163B2

    公开(公告)日:2013-12-31

    申请号:US12874119

    申请日:2010-09-01

    CPC classification number: H04N5/359 H04N9/045 H04N9/646

    Abstract: An image processing apparatus, for correcting a cross talk between adjacent pixels, includes: a memory unit for storing a correction parameter for reducing a cross talk signal leaked to an object pixel from an adjacent pixel, the correction parameter corresponding to a position of the object pixel; and a correcting unit for subtracting, based on the correction parameter stored in the memory unit, the cross talk signal from a pixel signal of the solid-state imaging apparatus correspondingly to a position of the pixel, wherein a number of the object pixel is at least two, and the at least two object pixels have different addresses in a horizontal direction, and different addresses in a vertical direction.

    Abstract translation: 一种用于校正相邻像素之间的串扰的图像处理装置,包括:存储单元,用于存储用于减少从相邻像素泄漏到对象像素的串扰信号的校正参数,对应于对象位置的校正参数 像素 以及校正单元,用于根据存储在存储单元中的校正参数,相对于像素的位置从固态成像设备的像素信号中减去串扰信号,其中对象像素的数量在 至少两个,并且所述至少两个对象像素在水平方向上具有不同的地址,并且在垂直方向上具有不同的地址。

    IMAGE PROCESSING APPARATUS AND IMAGING SYSTEM
    2.
    发明申请
    IMAGE PROCESSING APPARATUS AND IMAGING SYSTEM 有权
    图像处理装置和成像系统

    公开(公告)号:US20110069210A1

    公开(公告)日:2011-03-24

    申请号:US12874119

    申请日:2010-09-01

    CPC classification number: H04N5/359 H04N9/045 H04N9/646

    Abstract: An image processing apparatus, for correcting a cross talk between adjacent pixels, includes: a memory unit for storing a correction parameter for reducing a cross talk signal leaked to an object pixel from an adjacent pixel, the correction parameter corresponding to a position of the object pixel; and a correcting unit for subtracting, based on the correction parameter stored in the memory unit, the cross talk signal from a pixel signal of the solid-state imaging apparatus correspondingly to a position of the pixel, wherein a number of the object pixel is at least two, and the at least two object pixels have different addresses in a horizontal direction, and different addresses in a vertical direction.

    Abstract translation: 一种用于校正相邻像素之间的串扰的图像处理装置,包括:存储单元,用于存储用于减少从相邻像素泄漏到对象像素的串扰信号的校正参数,对应于对象位置的校正参数 像素 以及校正单元,用于根据存储在存储单元中的校正参数,相对于像素的位置从固态成像设备的像素信号中减去串扰信号,其中对象像素的数量在 至少两个,并且所述至少两个对象像素在水平方向上具有不同的地址,并且在垂直方向上具有不同的地址。

    Method for driving a photoelectric conversion device with isolation switches arranged between signal lines and amplifiers
    3.
    发明授权
    Method for driving a photoelectric conversion device with isolation switches arranged between signal lines and amplifiers 有权
    用于驱动设置在信号线和放大器之间的隔离开关的光电转换装置的方法

    公开(公告)号:US08520108B2

    公开(公告)日:2013-08-27

    申请号:US13085575

    申请日:2011-04-13

    CPC classification number: H04N5/378 H04N5/3575 H04N5/374

    Abstract: A photoelectric conversion device prevents a pseudo signal caused by the parasitic capacitance of a transfer switch from being input to an amplifier. A photoelectric conversion device (50) includes a pixel (10) which outputs a signal to a signal line (107), an amplifier which amplifies the signal supplied via the signal line (107), and an isolation switch (121) inserted between a signal line (108) and the input node of the amplifier. The pixel (10) includes a photodiode, a floating diffusion (FD), a transfer switch which transfers the charge of the photodiode to the FD, and an amplification transistor which outputs a signal to a signal line (109) in accordance with the potential of the FD. The isolation switch (121) is turned off at least in a period when a transfer pulse for controlling the transfer switch of the pixel (10) transits.

    Abstract translation: 光电转换装置防止由转印开关的寄生电容引起的伪信号被输入到放大器。 光电转换装置(50)包括向信号线(107)输出信号的像素(10),放大经由信号线(107)供给的信号的放大器和插入在信号线(107)之间的隔离开关 信号线(108)和放大器的输入节点。 像素(10)包括光电二极管,浮动扩散(FD),将光电二极管的电荷传送到FD的转移开关,以及根据电位将信号输出到信号线(109)的放大晶体管 的FD。 至少在用于控制像素(10)的转印开关的转印脉冲转移的期间,隔离开关(121)截止。

    Solid-state imaging apparatus
    4.
    发明授权
    Solid-state imaging apparatus 失效
    固态成像装置

    公开(公告)号:US08520102B2

    公开(公告)日:2013-08-27

    申请号:US13075259

    申请日:2011-03-30

    CPC classification number: H04N5/378 H03F3/45188 H03F2203/45646 H04N5/357

    Abstract: A solid-state imaging apparatus is provided that including a plurality of amplifiers each one amplifying a signal from each one of a plurality of pixels. The amplifier including first and second field effect transistors, gate electrodes of which are connected to the same voltage node (VBL); and a first wiring connected between the voltage node and the gate electrodes of the first and second field effect transistors. The first and second field effect transistors are arranged in a direction perpendicular to a direction in which the plurality of amplifiers is arranged. Material of the first wiring has a resistivity smaller than that of the gate electrodes of the first and second field effect transistors.

    Abstract translation: 提供一种固态成像装置,其包括多个放大器,每个放大器从多个像素中的每一个放大信号。 该放大器包括第一和第二场效应晶体管,其栅电极连接到同一电压节点(VBL); 以及连接在第一和第二场效应晶体管的电压节点和栅电极之间的第一布线。 第一和第二场效应晶体管沿与多个放大器布置的方向垂直的方向排列。 第一布线的材料的电阻率小于第一和第二场效应晶体管的栅电极的电阻率。

    IMAGE PICKUP DEVICE
    5.
    发明申请
    IMAGE PICKUP DEVICE 有权
    图像拾取器件

    公开(公告)号:US20110175150A1

    公开(公告)日:2011-07-21

    申请号:US13052216

    申请日:2011-03-21

    Abstract: The present invention uses an image pickup device comprising a plurality of pixels respectively including a photoelectric conversion unit for converting incoming light into a signal charge, an amplifying unit for amplifying the signal charge generated by the photoelectric conversion unit and a transfer unit for transferring the signal charge from the photoelectric conversion unit to the amplifying unit, in which the photoelectric conversion unit is formed of a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region and a second-conductivity-type third semiconductor region is formed on at least a part of the gap between a photoelectric conversion unit of a first pixel and a photoelectric conversion unit of a second pixel adjacent to the first pixel, a first-conductivity-type fourth semiconductor region having an impurity concentration higher than that of the first semiconductor region is formed between the photoelectric conversion unit and the third semiconductor region and a first-conductivity-type fifth semiconductor region formed at a position deeper than the fourth semiconductor region and having an impurity concentration higher than that of the first semiconductor region is included between the photoelectric conversion unit and the third semiconductor region.

    Abstract translation: 本发明使用包括多个像素的图像拾取装置,所述多个像素分别包括用于将入射光转换成信号电荷的光电转换单元,用于放大由光电转换单元产生的信号电荷的放大单元和用于传送信号的转移单元 由光电转换单元向放大单元充电,其中光电转换单元由第一导电型第一半导体区和第二导电型第二半导体区和第二导电型第三半导体区形成 形成在第一像素的光电转换单元与与第一像素相邻的第二像素的光电转换单元之间的间隙的至少一部分上,第一导电型第四半导体区域的杂质浓度高于 第一半导体区域形成在光电转换单元之间 光电转换单元和第三半导体层之间包括第三半导体区域和形成在比第四半导体区域更深的位置并且具有高于第一半导体区域的杂质浓度的第一导电型第五半导体区域 地区。

    PHOTOELECTRIC CONVERSION DEVICE AND IMAGING DEVICE
    7.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE AND IMAGING DEVICE 有权
    光电转换装置和成像装置

    公开(公告)号:US20080062296A1

    公开(公告)日:2008-03-13

    申请号:US11850266

    申请日:2007-09-05

    CPC classification number: H04N5/378 H04N5/3575 H04N5/374

    Abstract: A photoelectric conversion device prevents a pseudo signal caused by the parasitic capacitance of a transfer switch from being input to an amplifier. A photoelectric conversion device (50) includes a pixel (10) which outputs a signal to a signal line (107), an amplifier which amplifies the signal supplied via the signal line (107), and an isolation switch (121) inserted between a signal line (108) and the input node of the amplifier. The pixel (10) includes a photodiode, a floating diffusion (FD), a transfer switch which transfers the charge of the photodiode to the FD, and an amplification transistor which outputs a signal to a signal line (109) in accordance with the potential of the FD. The isolation switch (121) is turned off at least in a period when a transfer pulse for controlling the transfer switch of the pixel (10) transits.

    Abstract translation: 光电转换装置防止由转移开关的寄生电容引起的伪信号被输入到放大器。 光电转换装置(50)包括向信号线(107)输出信号的像素(10),放大经由信号线(107)供给的信号的放大器,以及插入在信号线 信号线(108)和放大器的输入节点。 像素(10)包括光电二极管,浮动扩散(FD),将光电二极管的电荷传送到FD的转移开关,以及根据电位将信号输出到信号线(109)的放大晶体管 的FD。 至少在用于控制像素(10)的转印开关的转印脉冲转移的期间,隔离开关(121)截止。

    Solid state image pickup device and camera
    8.
    发明申请
    Solid state image pickup device and camera 失效
    固态图像拾取装置和相机

    公开(公告)号:US20060208291A1

    公开(公告)日:2006-09-21

    申请号:US11373191

    申请日:2006-03-13

    Abstract: A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region.

    Abstract translation: 提供一种可以通过使用与浮动扩散区域分开设置的电容器区域的布局来防止混色的固态图像拾取装置和使用这种装置的相机。 光电二极管区域是包括光电二极管的矩形区域。 电容器区域包括载体保持单元,并且布置在作为具有比一侧更长的一侧的区域的光电二极管区域的矩形的一侧。 在MOS单元区域中,在另一侧设置包括具有比另一侧长的方向的输出单元的输出单元区域,该另一侧与光电二极管区域的矩形的一侧相交。 栅极区域和FD区域布置在光电二极管区域和电容器区域之间。

    IMAGE PICKUP DEVICE
    9.
    发明申请
    IMAGE PICKUP DEVICE 有权
    图像拾取器件

    公开(公告)号:US20120280295A1

    公开(公告)日:2012-11-08

    申请号:US13478871

    申请日:2012-05-23

    Abstract: An image pickup device includes pixels, each including a photoelectric conversion unit and a transfer unit. The photoelectric conversion unit includes a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region. A second-conductivity-type third semiconductor region is formed on at least a part of a gap between a photoelectric conversion unit of a first pixel and a photoelectric conversion unit of a second pixel adjacent to the first pixel. A first-conductivity-type fourth semiconductor region having an impurity concentration higher than an impurity concentration of the first semiconductor region is formed between the photoelectric conversion unit and the third semiconductor region. A first-conductivity-type fifth semiconductor region having an impurity concentration higher than the first semiconductor region is arranged between the photoelectric conversion unit and the third semiconductor region and is arranged deeper than fourth semiconductor region.

    Abstract translation: 图像拾取装置包括各自包括光电转换单元和转印单元的像素。 光电转换单元包括第一导电型第一半导体区和第二导电型第二半导体区。 第二导电型第三半导体区域形成在第一像素的光电转换单元和与第一像素相邻的第二像素的光电转换单元之间的间隙的至少一部分上。 在光电转换单元和第三半导体区域之间形成具有高于第一半导体区域的杂质浓度的杂质浓度的第一导电型第四半导体区域。 具有比第一半导体区域高的杂质浓度的第一导电型第五半导体区域配置在光电转换单元和第三半导体区域之间,并且布置在比第四半导体区域更深的位置。

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