公开(公告)号：US20120079985A1

公开(公告)日：2012-04-05

申请号：US13313736

申请日：2011-12-07

申请人： Hirohisa YAMAZAKI ,  Yuji Takebayashi ,  Masanori Sakai ,  Tsutomu Kato

发明人： Hirohisa YAMAZAKI ,  Yuji Takebayashi ,  Masanori Sakai ,  Tsutomu Kato

IPC分类号： C23C16/455

CPC分类号： H01L21/0228 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45527 ,  C23C16/45557 ,  H01L21/02112 ,  H01L21/02205

摘要： There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other.

摘要翻译： 提供了一种基板处理方法，包括以下步骤：将源气体供应到容纳基板的处理室中; 去除源气体和源气体的中间体残留在处理室中; 在基本上停止排出处理室中的气氛的状态下将臭氧供给到处理室中; 并且除去臭氧和中间体的臭氧残留在处理室中; 这些步骤重复多次，由此通过交替地供给源气体和臭氧而不使其彼此混合而在基板的表面上形成氧化膜。

公开(公告)号：US20100009079A1

公开(公告)日：2010-01-14

申请号：US12457779

申请日：2009-06-22

申请人： Hirohisa Yamazaki ,  Yuji Takebayashi ,  Masanori Sakai ,  Tsutomu Kato

发明人： Hirohisa Yamazaki ,  Yuji Takebayashi ,  Masanori Sakai ,  Tsutomu Kato

IPC分类号： C23C16/455 ,  C23C16/40

CPC分类号： H01L21/0228 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45527 ,  C23C16/45557 ,  H01L21/02112 ,  H01L21/02205

摘要： There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other.

摘要翻译： 提供了一种基板处理方法，包括以下步骤：将源气体供应到容纳基板的处理室中; 去除源气体和源气体的中间体残留在处理室中; 在基本上停止排出处理室中的气氛的状态下将臭氧供给到处理室中; 并且除去臭氧和中间体的臭氧残留在处理室中; 这些步骤重复多次，由此通过交替地供给源气体和臭氧而不使其彼此混合而在基板的表面上形成氧化膜。

公开(公告)号：US20090197424A1

公开(公告)日：2009-08-06

申请号：US12320577

申请日：2009-01-29

申请人： Masanori Sakai ,  Yuji Takebayashi ,  Tsutomu Kato ,  Shinya Sasaki ,  Hirohisa Yamazaki

发明人： Masanori Sakai ,  Yuji Takebayashi ,  Tsutomu Kato ,  Shinya Sasaki ,  Hirohisa Yamazaki

IPC分类号： H01L21/30 ,  C23C16/54

CPC分类号： C23C16/4584 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45546 ,  C23C16/45591

摘要： A substrate processing apparatus according to the present invention promotes supplying gases to spaces between adjacent substrates without reducing the number of substrates which can be collectively processed. The substrate processing apparatus includes: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; at least one processing gas supply nozzle which extends running along an inner wall of the processing chamber in the stacking direction of the substrates and supplies a processing gas to the inside of the processing chamber; a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich the processing gas supply nozzle from both sides thereof along the circumferential direction of the substrates and which supply the inactive gas to the inside of the processing chamber; and an exhaust line for exhausting the inside of the processing chamber.

摘要翻译： 根据本发明的基板处理装置促进向相邻基板之间的空间供应气体，而不减少可以共同处理的基板的数量。 基板处理装置包括：处理室，用于以水平姿态存储和处理以多级堆叠的基板; 至少一个处理气体供给喷嘴，其沿着所述处理室的内壁在所述基板的层叠方向上延伸，并且将处理气体供给到所述处理室的内部; 一对非活性气体供给喷嘴，沿着基板的堆叠方向沿着处理室的内壁延伸，并且沿着该基板的圆周方向从其两侧夹着处理气体供给喷嘴 并且将惰性气体供应到处理室的内部; 以及用于排出处理室内部的排气管线。

公开(公告)号：US08461062B2

公开(公告)日：2013-06-11

申请号：US13331258

申请日：2011-12-20

申请人： Masanori Sakai ,  Yuji Takebayashi ,  Tsutomu Kato ,  Shinya Sasaki ,  Hirohisa Yamazaki

发明人： Masanori Sakai ,  Yuji Takebayashi ,  Tsutomu Kato ,  Shinya Sasaki ,  Hirohisa Yamazaki

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4584 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45546 ,  C23C16/45591

摘要： The substrate processing apparatus includes: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; at least one processing gas supply nozzle which extends running along an inner wall of the processing chamber in the stacking direction of the substrates and supplies a processing gas to the inside of the processing chamber; a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich the processing gas supply nozzle from both sides thereof along the circumferential direction of the substrates and which supply the inactive gas to the inside of the processing chamber; and an exhaust line for exhausting the inside of the processing chamber.

摘要翻译： 基板处理装置包括：处理室，用于以水平姿态存储和处理以多级堆叠的基板; 至少一个处理气体供给喷嘴，其沿着所述处理室的内壁在所述基板的层叠方向上延伸，并且将处理气体供给到所述处理室的内部; 一对非活性气体供给喷嘴，沿着基板的堆叠方向沿着处理室的内壁延伸，并且沿着该基板的圆周方向从其两侧夹着处理气体供给喷嘴 并且将惰性气体供应到处理室的内部; 以及用于排出处理室内部的排气管线。

公开(公告)号：US20090223448A1

公开(公告)日：2009-09-10

申请号：US12379420

申请日：2009-02-20

申请人： Masanori Sakai ,  Yuji Takebayashi ,  Tsutomu Kato ,  Shinya Sasaki ,  Hirohisa Yamazaki

发明人： Masanori Sakai ,  Yuji Takebayashi ,  Tsutomu Kato ,  Shinya Sasaki ,  Hirohisa Yamazaki

IPC分类号： B05C9/06

CPC分类号： C23C16/4584 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45546 ,  C23C16/45591

摘要： A substrate processing apparatus of the present invention comprises: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; a processing gas supply unit for supplying two or more types of the processing gases to the inside of the processing chamber; an inactive gas supply unit for supplying an inactive gas to the inside of the processing chamber; and an exhaust unit for exhausting an atmosphere of the inside of the processing chamber, wherein the processing gas supply unit has at least two processing gas supply nozzles which extend running along an inner wall of the processing chamber in the stacking direction of the substrates and supply the processing gas to the inside of the processing chamber, and the inactive gas supply unit has a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich at least one processing gas supply nozzle of the at least two processing gas supply nozzles from both sides thereof, along the circumferential direction of the substrates, and which supply the inactive gas to the inside of the processing chamber.

摘要翻译： 本发明的基板处理装置包括：处理室，用于以水平姿态多层堆放和处理基板; 处理气体供应单元，用于将两种或多种类型的处理气体供应到处理室的内部; 用于向处理室的内部供应惰性气体的非活性气体供应单元; 以及用于排出处理室内部的气氛的排气单元，其中处理气体供应单元具有至少两个处理气体供应喷嘴，该处理气体供应喷嘴沿着基板的堆叠方向沿着处理室的内壁延伸并且供应 处理室内部的处理气体和非活性气体供给单元具有一对非活性气体供给喷嘴，其设置成沿着基板的堆叠方向沿着处理室的内壁延伸，因此 从而沿着基板的圆周方向从其两侧夹着至少两个处理气体供给喷嘴的至少一个处理气体供给喷嘴，并将惰性气体供给到处理室的内部。

公开(公告)号：US08828141B2

公开(公告)日：2014-09-09

申请号：US12379420

申请日：2009-02-20

申请人： Masanori Sakai ,  Yuji Takebayashi ,  Tsutomu Kato ,  Shinya Sasaki ,  Hirohisa Yamazaki

发明人： Masanori Sakai ,  Yuji Takebayashi ,  Tsutomu Kato ,  Shinya Sasaki ,  Hirohisa Yamazaki

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306 ,  C23C16/40 ,  C23C16/44 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4584 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45546 ,  C23C16/45591

摘要： A substrate processing apparatus of the present invention comprises: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; a processing gas supply unit for supplying two or more types of the processing gases to the inside of the processing chamber; an inactive gas supply unit for supplying an inactive gas to the inside of the processing chamber; and an exhaust unit for exhausting an atmosphere of the inside of the processing chamber, wherein the processing gas supply unit has at least two processing gas supply nozzles which extend running along an inner wall of the processing chamber in the stacking direction of the substrates and supply the processing gas to the inside of the processing chamber, and the inactive gas supply unit has a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich at least one processing gas supply nozzle of the at least two processing gas supply nozzles from both sides thereof, along the circumferential direction of the substrates, and which supply the inactive gas to the inside of the processing chamber.

摘要翻译： 本发明的基板处理装置包括：处理室，用于以水平姿态多层堆放和处理基板; 处理气体供应单元，用于将两种或多种类型的处理气体供应到处理室的内部; 用于向处理室的内部供应惰性气体的非活性气体供应单元; 以及用于排出处理室内部的气氛的排气单元，其中处理气体供应单元具有至少两个处理气体供应喷嘴，所述处理气体供应喷嘴沿着基板的堆叠方向沿处理室的内壁延伸并且供应 处理室内部的处理气体和非活性气体供给单元具有一对非活性气体供给喷嘴，其设置成沿着基板的堆叠方向沿着处理室的内壁延伸，因此 从而沿着基板的圆周方向从其两侧夹着至少两个处理气体供给喷嘴的至少一个处理气体供给喷嘴，并将惰性气体供给到处理室的内部。

公开(公告)号：US20090325389A1

公开(公告)日：2009-12-31

申请号：US12457584

申请日：2009-06-16

申请人： Yuji Takebayashi ,  Masanori Sakai ,  Tsutomu Kato ,  Kenji Ono

发明人： Yuji Takebayashi ,  Masanori Sakai ,  Tsutomu Kato ,  Kenji Ono

IPC分类号： H01L21/18 ,  B05C11/00

CPC分类号： C23C16/4481 ,  C23C16/4408 ,  C23C16/45557 ,  C23C16/52

摘要： To grasp an accumulation state of residual matters inside of a vaporizer without decomposing the vaporizer, and grasp the timing of performing maintenance to the inside of the vaporizer in advance. A substrate processing apparatus of the present invention includes: a processing chamber in which substrates are contained; a vaporizer having a vaporizing space, for generating vaporized gas by vaporizing liquid source supplied into the vaporizing space; a liquid source supply system having a liquid source supply line for supplying the liquid source into the vaporizing space; a vaporized gas supply system having a vaporized gas supply line for supplying the vaporized gas into the processing chamber; an exhaust system for exhausting an atmosphere in the processing chamber; a pressure meter for measuring a pressure in the vaporizing space; a carrier gas supply system having a carrier gas supply line for supplying carrier gas into the vaporizing space; and a controller for judging a state of the vaporizer based on a measured value of the pressure meter when the carrier gas is supplied into the vaporizing space.

摘要翻译： 在不分解蒸发器的情况下掌握蒸发器内的残留物的积聚状态，并且预先对蒸发器内部进行维护的时机。 本发明的基板处理装置包括：处理室，其中容纳基板; 蒸发器，其具有蒸发空间，用于通过蒸发供应到蒸发空间中的液体源产生汽化气体; 液体源供应系统，具有用于将液体源供应到蒸发空间中的液体源供应管线; 气化气体供给系统，具有用于将蒸发气体供给到处理室中的汽化气体供给管线; 用于排出处理室中的气氛的排气系统; 用于测量蒸发空间中的压力的​​压力计; 载气供应系统，具有用于将载气供应到蒸发空间中的载气供应管线; 以及控制器，用于当将载气供应到汽化空间中时，基于压力计的测量值来判断蒸发器的状态。

公开(公告)号：US20090035951A1

公开(公告)日：2009-02-05

申请号：US12171756

申请日：2008-07-11

申请人： Hironobu Miya ,  Masanori Sakai ,  Norikazu Mizuno ,  Tsutomu Kato ,  Yuji Takebayashi

发明人： Hironobu Miya ,  Masanori Sakai ,  Norikazu Mizuno ,  Tsutomu Kato ,  Yuji Takebayashi

IPC分类号： H01L21/31

CPC分类号： H01L21/31645 ,  C23C16/405 ,  C23C16/45527 ,  C23C16/4557 ,  H01L21/02181 ,  H01L21/3141

摘要： Provided is a manufacturing method of a semiconductor device composed of a step of carrying-in a wafer into a processing chamber; a step of forming an HfO2 film on the wafer by alternately supplying TEMAH and O3, under heating, into the processing chamber; and a step of carrying-out the wafer from the inside of the processing chamber, wherein in the step of forming the HfO2 film, heating temperature of TEMAH and heating temperature of O3 are set to be different.

摘要翻译： 提供一种半导体器件的制造方法，该半导体器件由将晶片引入处理室的步骤构成; 通过在加热室内交替供给TEMAH和O3，在晶片上形成HfO 2膜的步骤; 以及从处理室的内部进行晶片的步骤，其中在形成HfO 2膜的步骤中，将TEMAH的加热温度和O 3的加热温度设定为不同。

公开(公告)号：US20100087069A1

公开(公告)日：2010-04-08

申请号：US12571688

申请日：2009-10-01

申请人： Hironobu MIYA ,  Kazuyuki Toyoda ,  Masanori Sakai ,  Norikazu Mizuno ,  Tsutomu Kato ,  Yuji Takebayashi ,  Kenji Ono ,  Atsushi Morikawa ,  Satoshi Okada

发明人： Hironobu MIYA ,  Kazuyuki Toyoda ,  Masanori Sakai ,  Norikazu Mizuno ,  Tsutomu Kato ,  Yuji Takebayashi ,  Kenji Ono ,  Atsushi Morikawa ,  Satoshi Okada

IPC分类号： H01L21/316 ,  C23C16/46 ,  C23C16/513

CPC分类号： C23C16/405 ,  C23C16/483 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31608 ,  H01L21/31641 ,  H01L21/31645

摘要： The coverage characteristics or loading effect of an oxide film can be improved without having to increase the supply amount or time of an oxidant. There is provided method of manufacturing a semiconductor device. The method comprises loading at least one substrate to a processing chamber; forming an oxide film on the substrate by alternately supplying a first reaction material and a second reaction material containing oxygen atoms to the processing chamber while heating the substrate; and unloading the substrate from the processing chamber, wherein the forming of the oxide film is performed by keeping the substrate at a temperature equal to or lower than a self-decomposition temperature of the first reaction material and irradiating ultraviolet light to the second reaction material.

摘要翻译： 可以提高氧化膜的覆盖特性或负载效果，而不必增加氧化剂的供给量或时间。 提供了制造半导体器件的方法。 该方法包括将至少一个衬底装载到处理室; 通过在加热所述基板的同时向所述处理室交替地供给第一反应材料和含有氧原子的第二反应材料，在所述基板上形成氧化膜; 以及从所述处理室中卸载所述基板，其中，通过将所述基板保持在所述第一反应材料的自身分解温度以下并且向所述第二反应材料照射紫外线的温度进行氧化膜的形成。

公开(公告)号：USD655255S1

公开(公告)日：2012-03-06

申请号：US29378016

申请日：2010-10-28

申请人： Yuji Takebayashi ,  Tatsuyuki Saito ,  Tetsuo Yamamoto ,  Tsutomu Kato ,  Satoshi Okada

设计人： Yuji Takebayashi ,  Tatsuyuki Saito ,  Tetsuo Yamamoto ,  Tsutomu Kato ,  Satoshi Okada