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197 条记录 (耗时 0.029 秒)

    Semiconductor device and manufacturing method of the same
    1.
    发明申请
    Semiconductor device and manufacturing method of the same 失效
    半导体器件及其制造方法相同

    公开(公告)号：US20060073664A1

    公开(公告)日：2006-04-06

    申请号：US11242961

    申请日：2005-10-05

    申请人： Masao Kondo ,  Nobuyuki Sugii ,  Yoshinobu Kimura

    发明人： Masao Kondo ,  Nobuyuki Sugii ,  Yoshinobu Kimura

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7835 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/6659 ,  H01L29/66659

    摘要： Provided is a technology capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A p type strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate. The p type strained layer has a thickness adjusted to be thicker than the critical film thickness at which no misfit dislocation occurs. Accordingly, misfit dislocations occur in the vicinity of the interface between the p type strained silicon layer and p type silicon-germanium layer. At a position which is below the end of a gate electrode and at which misfit dislocations occur, the impurity concentration of the n type strained silicon layer and n type silicon-germanium layer is 1×1019 cm−3 or less.

    摘要翻译： 提供了能够抑制形成在应变硅层中的沟道区域中的电子迁移率降低的技术。 在半导体衬底上形成的p型硅 - 锗层上形成p型应变硅层。 p型应变层的厚度被调整为比没有失配位错发生的临界膜厚度更厚。 因此，在p型应变硅层和p型硅 - 锗层之间的界面附近发生失配位错。 在位于栅电极末端并发生失配位错的位置处，n型应变硅层和n型硅 - 锗层的杂质浓度为1×10 19 cm -3， -3以下。

    Semiconductor device and manufacturing method of the same
    2.
    发明授权
    Semiconductor device and manufacturing method of the same 失效
    半导体器件及其制造方法相同

    公开(公告)号：US07436046B2

    公开(公告)日：2008-10-14

    申请号：US11242961

    申请日：2005-10-05

    申请人： Masao Kondo ,  Nobuyuki Sugii ,  Yoshinobu Kimura

    发明人： Masao Kondo ,  Nobuyuki Sugii ,  Yoshinobu Kimura

    IPC分类号： H01L31/117

    CPC分类号： H01L29/7835 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/6659 ,  H01L29/66659

    摘要： Provided is a technology capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A p type strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate. The p type strained layer has a thickness adjusted to be thicker than the critical film thickness at which no misfit dislocation occurs. Accordingly, misfit dislocations occur in the vicinity of the interface between the p type strained silicon layer and p type silicon-germanium layer. At a position which is below the end of a gate electrode and at which misfit dislocations occur, the impurity concentration of the n type strained silicon layer and n type silicon-germanium layer is 1×1019 cm−3 or less.

    摘要翻译： 提供了能够抑制形成在应变硅层中的沟道区域中的电子迁移率降低的技术。 在半导体衬底上形成的p型硅 - 锗层上形成p型应变硅层。 p型应变层的厚度被调整为比没有失配位错发生的临界膜厚度更厚。 因此，在p型应变硅层和p型硅 - 锗层之间的界面附近发生失配位错。 在位于栅电极末端并发生失配位错的位置处，n型应变硅层和n型硅 - 锗层的杂质浓度为1×10 19 cm -3， -3以下。

    Semiconductor device and manufacturing method of the same
    3.
    发明授权
    Semiconductor device and manufacturing method of the same 失效
    半导体器件及其制造方法相同

    公开(公告)号：US07868425B2

    公开(公告)日：2011-01-11

    申请号：US12251081

    申请日：2008-10-14

    申请人： Masao Kondo ,  Nobuyuki Sugii ,  Yoshinobu Kimura

    发明人： Masao Kondo ,  Nobuyuki Sugii ,  Yoshinobu Kimura

    IPC分类号： H01L31/117

    CPC分类号： H01L29/7835 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/6659 ,  H01L29/66659

    摘要： Provided is a technology capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A p type strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate. The p type strained layer has a thickness adjusted to be thicker than the critical film thickness at which no misfit dislocation occurs. Accordingly, misfit dislocations occur in the vicinity of the interface between the p type strained silicon layer and p type silicon-germanium layer. At a position which is below the end of a gate electrode and at which misfit dislocations occur, the impurity concentration of the n type strained silicon layer and n type silicon-germanium layer is 1×1019 cm−3 or less.

    摘要翻译： 提供了能够抑制形成在应变硅层中的沟道区域中的电子迁移率降低的技术。 在半导体衬底上形成的p型硅 - 锗层上形成p型应变硅层。 p型应变层的厚度被调整为比没有失配位错发生的临界膜厚度更厚。 因此，在p型应变硅层和p型硅 - 锗层之间的界面附近发生失配位错。 在低于栅电极的端部并发生失配位错的位置处，n型应变硅层和n型硅 - 锗层的杂质浓度为1×1019cm-3以下。

    Semiconductor device and manufacturing method of the same
    4.
    发明授权
    Semiconductor device and manufacturing method of the same 失效
    半导体器件及其制造方法相同

    公开(公告)号：US07944024B2

    公开(公告)日：2011-05-17

    申请号：US12894609

    申请日：2010-09-30

    申请人： Masao Kondo ,  Nobuyuki Sugii ,  Yoshinobu Kimura

    发明人： Masao Kondo ,  Nobuyuki Sugii ,  Yoshinobu Kimura

    IPC分类号： H01L31/117

    CPC分类号： H01L29/7835 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/6659 ,  H01L29/66659

    摘要： A semiconductor device is provided which is capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate. The strained layer has a thickness adjusted to be thicker than the critical film thickness at which no misfit dislocation occurs. Accordingly, misfit dislocations occur in the vicinity of the interface between the strained silicon layer and silicon-germanium layer.

    摘要翻译： 提供一种半导体器件，其能够抑制在应变硅层中形成的沟道区域中的电子迁移率的降低。 在半导体衬底上形成的p型硅 - 锗层上形成应变硅层。 应变层的厚度被调整为比不发生失配位错的临界膜厚度更厚。 因此，失配位错发生在应变硅层和硅 - 锗层之间的界面附近。

    Information processing apparatus, information processing system and information processing method
    6.
    发明授权
    Information processing apparatus, information processing system and information processing method 有权
    信息处理装置，信息处理系统和信息处理方法

    公开(公告)号：US09013535B2

    公开(公告)日：2015-04-21

    申请号：US13876294

    申请日：2011-10-03

    申请人： Yusuke Sakai ,  Masao Kondo

    发明人： Yusuke Sakai ,  Masao Kondo

    IPC分类号： H04N7/15 ,  G06F3/042 ,  H04N7/14

    CPC分类号： H04N7/147 ,  G06F3/017 ,  G06F3/042 ,  H04N7/15

    摘要： An information processing apparatus may include a detecting unit to detect a pointing object in a captured image, and a generation unit to generate pointing information based on detection of the pointing object by the detecting unit. The pointing information may indicate a position of the pointing object determined using a pointable range set based on a user in the captured image. The apparatus may further include a communication unit to transmit the pointing information to an external apparatus.

    摘要翻译： 信息处理装置可以包括：检测单元，用于检测拍摄图像中的指示对象;以及生成单元，用于基于检测单元对指示对象的检测来生成指点信息。 指示信息可以指示使用基于捕获图像中的用户设置的可点位范围来确定的指向对象的位置。 该装置还可以包括将指向信息发送到外部设备的通信单元。

    INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND PROGRAM
    7.
    发明申请
    INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND PROGRAM 审中-公开
    信息处理设备，信息处理方法和程序

    公开(公告)号：US20140344763A1

    公开(公告)日：2014-11-20

    申请号：US14344264

    申请日：2012-07-25

    申请人： Kazuyuki Yamamoto ,  Masao Kondo ,  Ikuo Yamano

    发明人： Kazuyuki Yamamoto ,  Masao Kondo ,  Ikuo Yamano

    IPC分类号： G06F3/0484

    CPC分类号： G06F3/0484 ,  G06F3/03543 ,  G06F3/038 ,  G06F3/0485 ,  G09G5/08

    摘要： Provided is an information processing device including a changing speed setting unit that sets a changing speed of an object displayed on a display unit, based on a weighting to an input operation unit capable of inputting operation information related to a changing direction of the object, and a display control unit that changes the object at the changing speed.

    摘要翻译： 提供了一种信息处理装置，包括：变化速度设定单元，其基于对能够输入与对象的改变方向有关的操作信息的输入操作单元的加权来设定显示在显示单元上的对象的变化速度;以及 显示控制单元，以改变速度改变对象。

    Polyphenol-content-increasing agent for plant
    10.
    发明授权
    Polyphenol-content-increasing agent for plant 有权
    植物多酚含量增加剂

    公开(公告)号：US08309493B2

    公开(公告)日：2012-11-13

    申请号：US12376865

    申请日：2007-07-18

    申请人： Masao Kondo ,  Naomi Aiba ,  Setsuko Miyanari ,  Masahiro Ishizuka ,  Tohru Tanaka

    发明人： Masao Kondo ,  Naomi Aiba ,  Setsuko Miyanari ,  Masahiro Ishizuka ,  Tohru Tanaka

    IPC分类号： A01N47/10 ,  A01N47/24 ,  A01N47/20 ,  A01N47/06 ,  A01N37/00 ,  A01N37/44 ,  A01N33/00 ,  A01N37/18

    CPC分类号： A01N37/44

    摘要： To provide a polyphenol-content-increasing agent which increases the content of polyphenol in a plant.A polyphenol-content-increasing agent for plant, containing, as an active ingredient, a 5-aminolevulinic acid or a derivative thereof represented by the following formula (1):(Chem 1) R2R1NCH2COCH2CH2COR3  (1) wherein R1 and R2 each independently represents a hydrogen atom, an alkyl group, an acyl group, an alkoxycarbonyl group, an aryl group, or an aralkyl group; R3 represents a hydroxyl group, an alkoxy group which may have a substituent, an acyloxy group, an alkoxycarbonyloxy group, an aryloxy group, an aralkyloxy group, or an amino group, or a salt thereof.

    摘要翻译： 提供增加植物中多酚含量的多酚含量增加剂。 含有下述式（1）所示的5-氨基乙酰丙酸或其衍生物作为活性成分的植物多酚含量增加剂：（化学式1）R2R1NCH2COCH2CH2COR3（1）其中R1和R2各自独立地表示 氢原子，烷基，酰基，烷氧基羰基，芳基或芳烷基; R3表示羟基，可以具有取代基的烷氧基，酰氧基，烷氧基羰基氧基，芳氧基，芳烷氧基或氨基，或其盐。