公开(公告)号：US07375366B2

公开(公告)日：2008-05-20

申请号：US10204670

申请日：2001-02-22

申请人： Hiroshi Ohki ,  Tsunaki Tsunesada ,  Masao Urayama ,  Takashi Kyotani ,  Keitarou Matsui ,  Akira Tomita

发明人： Hiroshi Ohki ,  Tsunaki Tsunesada ,  Masao Urayama ,  Takashi Kyotani ,  Keitarou Matsui ,  Akira Tomita

IPC分类号： B82B1/00

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/16 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/00 ,  Y10S977/952 ,  Y10T428/249929 ,  Y10T428/2975

摘要： A carbon nanotube has a carbon network film of polycrystalline structure divided into crystal regions along the axis of the tube, and the length along the tube axis of each crystal region preferably ranges from 3 to 6 nm. An electron source includes a carbon nanotube having a cylindrical shape and the end of which on the substrate side is closed and disposed in a fine hole. The end on the substrate side of the tube is firmly adhered to the substrate. The carbon nanotube is produced by a method in which carbon is deposited under the condition that no metal catalyst is present in the fine hole and produced by a method in which after the carbon deposition the end of the carbon deposition film is modified by etching the carbon deposition film using a plasma. Therefore, an electron source excellent in the evenness of field emission characteristics in a field emission region (pixel) in the device plane and driven with low voltage can be provided, and a display operated with ultralow power consumption exhibiting ultrahigh luminance can be provided.

摘要翻译： 碳纳米管具有沿着管轴分成晶体区域的多晶结构的碳网膜，并且沿着各晶体区域的管轴的长度优选为3〜6nm。 电子源包括具有圆筒形状的碳纳米管，其基底侧的端部封闭并设置在细孔中。 管的衬底侧的端部牢固地粘附到衬底上。 碳纳米管是通过在细孔中不存在金属催化剂的条件下沉积碳的方法制造的，其方法是通过碳沉积后，通过蚀刻碳来改变碳沉积膜的端部 使用等离子体的沉积膜。 因此，可以提供在器件平面中的场发射区域（像素）中的场发射特性的均匀性优异的电子源，并且以低电压驱动，并且可以提供以超高亮度显示的超低功耗的显示器。

公开(公告)号：US06650061B1

公开(公告)日：2003-11-18

申请号：US09627656

申请日：2000-07-28

申请人： Masao Urayama ,  Hiroshi Ohki

发明人： Masao Urayama ,  Hiroshi Ohki

IPC分类号： G09G310

CPC分类号： B82Y10/00 ,  H01J1/3042 ,  H01J2201/30469

摘要： The electron-source array of the present invention is provided with cathode electrodes placed on an insulation substrate in the form of lines; and gate electrodes that are placed face to face with the cathode electrodes with the insulation film being interpolated in between. In this arrangement, the cathode electrodes and the gate electrodes are arranged so as to intersect each other with a pore being formed at an intersecting portion between each cathode electrode and each gate electrode in a manner so as to penetrate the insulation film, and the pore is filled with a conductive material or a semiconductive material with the material being electrically connected to the corresponding cathode electrode, and is formed in a manner so as to separate from the gate electrodes with a space in between. Thus, it becomes possible to form very fine emitters uniformly without the need for a high-precision patterning technique and consequently to provide an electron-source array that enables an X-Y matrix driving process.

摘要翻译： 本发明的电子源阵列设置有以线的形式放置在绝缘基板上的阴极电极; 以及与绝缘膜在其间插入的与阴极电极面对面放置的栅电极。 在这种布置中，阴极电极和栅电极被布置为以穿透绝缘膜的方式在每个阴极电极和每个栅电极之间的交叉部分处形成孔，从而彼此相交，并且孔 填充有导电材料或半导体材料，其中该材料电连接到相应的阴极电极，并以与之间的间隔与栅电极分离的方式形成。 因此，可以均匀地形成非常精细的发射体，而不需要高精度图案化技术，从而提供能够进行X-Y矩阵驱动处理的电子源阵列。

公开(公告)号：US06545396B1

公开(公告)日：2003-04-08

申请号：US09655737

申请日：2000-09-06

申请人： Hiroshi Ohki ,  Masao Urayama

发明人： Hiroshi Ohki ,  Masao Urayama

IPC分类号： H01J102

CPC分类号： H01J31/127

摘要： Featured is an image forming device for driving field emission electron sources capable of low-vacuum operation, high in ion impact resistance, and controlled in orientation, under X-Y addressing through electrode lines of simple and low-cost configuration. The image forming device includes cathode electrode lines and gate electrode lines of wire structure, where the field emission electron sources are selectively grown on the cathode electrode lines. A vacuum gap is provided between a supporting substrate on the back-plate side and the cathode electrode lines, and a getter is arranged on the supporting substrate.

摘要翻译： 特色是一种用于驱动场致发射电子源的图像形成装置，其能够通过简单且低成本配置的电极线在X-Y寻址下进行低真空操作，高离子冲击强度和受控制的取向。 图像形成装置包括阴极电极线和线结构的栅极电极线，其中场致发射电子源在阴极电极线上选择性地生长。 在背板侧的支撑基板和阴极电极线之间设置真空间隙，在支撑基板上设置吸气剂。

公开(公告)号：US08173487B2

公开(公告)日：2012-05-08

申请号：US12530552

申请日：2008-04-01

申请人： Masao Urayama ,  Masashi Kawasaki ,  Hideo Ohno

发明人： Masao Urayama ,  Masashi Kawasaki ,  Hideo Ohno

IPC分类号： H01L29/12 ,  H01L21/20

CPC分类号： H01L29/7869 ,  H01L29/78696 ,  Y10S438/922

摘要： A thin-film transistor (1) of the present invention includes an insulating substrate (2), a gate electrode (3) which has a predetermined shape and is formed on the insulating substrate (2), a gate insulating film (4) formed on the gate electrode (3), and a semiconductor layer (5) which is polycrystalline ZnO and is formed on the gate insulating film (4). The semiconductor layer (5) is immersed in a solution in which impurities are dissolved so that the impurities are selectively added to a grain boundary part of the polycrystalline ZnO film. Subsequently, a source electrode (6) and a drain electrode (7) are formed so as to have a predetermined shape. Next, a protection layer (8) is formed on the source electrode (6) and the drain electrode (7). Thus, a thin-film transistor which has a good subthreshold characteristic and has a zinc oxide film as a base of an active layer can be realized.

摘要翻译： 本发明的薄膜晶体管（1）包括绝缘基板（2），具有预定形状并形成在绝缘基板（2）上的栅电极（3），形成有栅极绝缘膜（4） 在栅电极（3）上形成半导体层（5），并形成在栅极绝缘膜（4）上。 将半导体层（5）浸渍在杂质溶解的溶液中，使杂质选择性地添加到多晶ZnO膜的晶界部分。 随后，源电极（6）和漏电极（7）形成为具有预定形状。 接下来，在源电极（6）和漏电极（7）上形成保护层（8）。 因此，可以实现具有良好的亚阈值特性并且具有氧化锌膜作为有源层的基底的薄膜晶体管。

公开(公告)号：US07078863B2

公开(公告)日：2006-07-18

申请号：US10381477

申请日：2001-09-27

申请人： Tetsuya Ide ,  Junichi Sawahata ,  Masao Urayama

发明人： Tetsuya Ide ,  Junichi Sawahata ,  Masao Urayama

IPC分类号： G09G3/10

CPC分类号： H01J29/488 ,  H01J1/304 ,  H01J3/021 ,  H01J3/029 ,  H01J29/467 ,  H01J2329/00

摘要： A cold-cathode electron source having an improved utilization efficiency of an electron beam and a simple structure. The cold-cathode electron source comprises a gate electrode (4) provided on a substrate (2) through an insulating layer (3) and an emitter (6) extending through the insulating layer (3) and the gate electrode (4) and disposed in an opening of the gate. During the emission of electrons from the emitter (6), the following relationships are satisfied: 10 [V/μm]≧(Va−Vg)/(Ha−Hg)≧Vg/Hg; and Vg/Hg [V/μm]≧Va×10−4×(9.7−1.3×1n(Hg))×(1000/Ha)0.5, where Ha [μm] is an anode-emitter distance, Va [V] is an anode-emitter voltage, Hg [μm] is a gate-emitter distance, and Vg [V] is a gate-emitter voltage.

摘要翻译： 具有提高电子束的利用效率和简单结构的冷阴极电子源。 冷阴极电子源包括通过绝缘层（3）设置在基板（2）上的栅极（4）和延伸穿过绝缘层（3）和栅电极（4）的发射极（6） 在门口的开口。 在从发射体（6）发射电子的过程中，满足以下关系：10 V / V m =（Va-Vg）/（Ha-Hg）> = Vg / Hg; 和Vg / Hg [V / mum] = Vax10-4×（9.7-1.3x1n（Hg））x（1000 / Ha）<0.5>其中Ha ]是阳极 - 发射极距离，Va [V]是阳极 - 发射极电压，Hg [m]是栅 - 发射极距离，Vg [V]是栅 - 发射极电压。

公开(公告)号：US5800233A

公开(公告)日：1998-09-01

申请号：US599315

申请日：1996-02-09

申请人： Seiki Yano ,  Masao Urayama ,  Yoshiyuki Takegawa ,  Yuko Morita

发明人： Seiki Yano ,  Masao Urayama ,  Yoshiyuki Takegawa ,  Yuko Morita

IPC分类号： H01J1/30 ,  H01J1/304 ,  H01J9/02 ,  H01J9/40

CPC分类号： H01J9/025

摘要： A cathode is formed on a glass substrate by depositing nickel thereon, and silicon dioxide is allowed to accumulate on the cathode by sputtering to form an insulator film. Then, a gate electrode is provided on the insulator film by depositing nickel thereon. A hole is formed on the glass substrate by lithography to carry out patterning, and the gate electrode and the insulator film are selectively etched to create a hole for the formation of an emitter emitting electrons. Furthermore, nickel is stacked into the hole by deposition to form the emitter, and subsequently the emitter is covered with sulfur as a high vapor-pressure substance to form a high vapor-pressure substance layer.

摘要翻译： 通过在其上沉积镍在玻璃基板上形成阴极，并且通过溅射使二氧化硅积聚在阴极上以形成绝缘膜。 然后，通过在其上沉积镍，在绝缘膜上设置栅电极。 通过光刻在玻璃基板上形成孔以进行图案化，并且选择性地蚀刻栅电极和绝缘膜，以形成用于形成发射电子的发射极的孔。 此外，通过沉积将镍堆积到孔中以形成发射极，随后用硫作为高蒸气压物质覆盖发射体以形成高蒸气压物质层。

公开(公告)号：US20100044702A1

公开(公告)日：2010-02-25

申请号：US12530552

申请日：2008-04-01

申请人： Masao Urayama ,  Masashi Kawasaki ,  Hideo Ohno

发明人： Masao Urayama ,  Masashi Kawasaki ,  Hideo Ohno

IPC分类号： H01L29/12 ,  H01L21/20

CPC分类号： H01L29/7869 ,  H01L29/78696 ,  Y10S438/922

摘要： A thin-film transistor (1) of the present invention includes an insulating substrate (2), a gate electrode (3) which has a predetermined shape and is formed on the insulating substrate (2), a gate insulating film (4) formed on the gate electrode (3), and a semiconductor layer (5) which is polycrystalline ZnO and is formed on the gate insulating film (4). The semiconductor layer (5) is immersed in a solution in which impurities are dissolved so that the impurities are selectively added to a grain boundary part of the polycrystalline ZnO film. Subsequently, a source electrode (6) and a drain electrode (7) are formed so as to have a predetermined shape. Next, a protection layer (8) is formed on the source electrode (6) and the drain electrode (7). Thus, a thin-film transistor which has a good subthreshold characteristic and has a zinc oxide film as a base of an active layer can be realized.

摘要翻译： 本发明的薄膜晶体管（1）包括绝缘基板（2），具有预定形状并形成在绝缘基板（2）上的栅电极（3），形成有栅极绝缘膜（4） 在栅电极（3）上形成半导体层（5），并形成在栅极绝缘膜（4）上。 将半导体层（5）浸渍在杂质溶解的溶液中，使杂质选择性地添加到多晶ZnO膜的晶界部分。 随后，源电极（6）和漏电极（7）形成为具有预定形状。 接下来，在源电极（6）和漏电极（7）上形成保护层（8）。 因此，可以实现具有良好的亚阈值特性并且具有氧化锌膜作为有源层的基底的薄膜晶体管。

公开(公告)号：US06741017B1

公开(公告)日：2004-05-25

申请号：US09620999

申请日：2000-07-21

申请人： Tetsuya Ide ,  Masao Urayama

发明人： Tetsuya Ide ,  Masao Urayama

IPC分类号： H01J102

CPC分类号： B82Y10/00 ,  H01J1/3048 ,  H01J2201/30469 ,  Y10S977/939

摘要： Disclosed is a cold cathode electron source characterized in that a cold cathode material which can achieve electron emission in a low electric field (e.g., a carbon nanotube), necessary constituent elements are provided individually in uncalcined ceramic sheets (green sheets 21, 43, 46) and the sheets are laminated and calcined to form an integral structure. The electron source can be manufactured by forming through-holes 20 in a flat plate, charging a conductive paste 30 containing carbon nanotubes 31 dispersed therein into the through-holes 20 by vacuum suction, thereby causing to orient the carbon nanotubes 31 in the axis direction of the through-hoes 20. The electron source is useful for the low-cost manufacture of a device with a cold cathode electron source which can achieve ready vacuum evacuation and maintenance of the vacuum level, as well as a high emission current density at a low voltage.

摘要翻译： 公开了一种冷阴极电子源，其特征在于，在未煅烧的陶瓷片（生片21,43,46）中分别设置可在低电场（例如，碳纳米管）中实现电子发射的冷阴极材料，必要的构成元件 ），并将片材层压并煅烧以形成整体结构。 可以通过在平板中形成通孔20来制造电子源，通过真空抽吸将分散在其中的含有碳纳米管31的导电膏30加载到通孔20中，从而使碳纳米管31沿轴向取向 电子源可用于低成本制造具有冷阴极电子源的器件，该器件可以实现即时真空抽真空和维持真空度，以及高的发射电流密度 低电压。

公开(公告)号：US20130027652A1

公开(公告)日：2013-01-31

申请号：US13637621

申请日：2011-03-29

申请人： Masao Urayama ,  Joji Kawamura

发明人： Masao Urayama ,  Joji Kawamura

IPC分类号： G02F1/1339

CPC分类号： G02F1/13394 ,  G02F1/133305 ,  G02F1/1339 ,  G02F2001/13398

摘要： A liquid crystal display element (10) in accordance with the present invention includes (i) a pair of substrates (1), at least one of which is a flexible substrate, (ii) a liquid crystal (3) with which a gap between the pair of substrates (1) is filled, (iii) a spacer member (4) having a height so as to sustain a thickness of the liquid crystal (3), (iv) a sealant (2) for allowing the gap to be filled with the liquid crystal (3), and (v) a barrier (5) for causing a liquid crystal filling region to be divided into (a) a first region including a display region and (b) a second region located outside the first region. The barrier (5) is attached to one substrate (1b) of the pair of the substrates (1), and is in close contact with, but not attached to, the other substrate (1a).

摘要翻译： 根据本发明的液晶显示元件（10）包括（i）一对基板（1），其中至少一个是柔性基板，（ii）液晶（3），其间具有间隙 填充一对基板（1），（iii）具有高度以保持液晶（3）的厚度的间隔件（4），（iv）用于允许间隙的密封剂（2） 充满液晶（3），和（v）用于使液晶填充区域分为（a）包括显示区域的第一区域和（b）位于第一 地区。 所述阻挡层（5）与所述一对基板（1）的一个基板（1b）连接，与另一基板（1a）紧密接触，但不附着于所述基板。

公开(公告)号：US20130021572A1

公开(公告)日：2013-01-24

申请号：US13637713

申请日：2011-01-21

申请人： Masao Urayama ,  Masanori Umeya ,  Atsushi Sugizaki

发明人： Masao Urayama ,  Masanori Umeya ,  Atsushi Sugizaki

IPC分类号： G02F1/1339

CPC分类号： G02F1/1339 ,  G02F1/13394

摘要： A liquid crystal display element (10) in accordance with the present invention includes: a pair of substrates (1), at least one of which is a flexible substrate; a liquid crystal layer (3) sealed in a gap between the pair of substrates (1); and spacer members (4), provided between the pair of substrates (1), which sustain the gap between the pair of substrates (1). A thickness of the liquid crystal layer (3) falls in a range of 93% to 98% of heights of the spacer members (4) while no pressure is applied to the spacer members. Adjacent spacer members (4) are provided at intervals of less than 400 μm.

摘要翻译： 根据本发明的液晶显示元件（10）包括：一对基板（1），其中至少一个是柔性基板; 密封在所述一对基板（1）之间的间隙中的液晶层（3）; 和间隔件（4），其设置在一对基板（1）之间，其维持所述一对基板（1）之间的间隙。 液晶层（3）的厚度在间隔件（4）的高度的93％至98％的范围内，而隔离件没有施加压力。 相邻的间隔件（4）以小于400μm的间隔设置。