公开(公告)号：US20130016308A1

公开(公告)日：2013-01-17

申请号：US13636297

申请日：2011-01-21

申请人： Masao Urayama ,  Masanori Umeya ,  Takahiko Muneyoshi

发明人： Masao Urayama ,  Masanori Umeya ,  Takahiko Muneyoshi

IPC分类号： G02F1/1339 ,  H01J9/26 ,  G02F1/13357

CPC分类号： G02F1/13394 ,  G02F2001/133388

摘要： A liquid crystal panel (9) includes a front substrate (1a) and a back substrate (1b), and a liquid crystal layer (3) provided between these substrates. A seal (4) is used to bond the front substrate (1a) and the back substrate (1b) together. A region where either of the pair of substrates is in contact with the liquid crystal layer (3) is divided into a display region (6) and a non-display region (5). The number of spacers (2) per unit area is larger in the display region (6) than in the non-display region (5). In other words, the density of the spacers (2) is different between the display region (6) and the non-display region (5), and the density of the spacers (2) is higher in the display region (6) than in the non-display region (5). According to this configuration, the display region (6) cannot be deformed significantly even under pressure from outside, and thus the non-display region (5) is deformed by the pressure.

摘要翻译： 液晶面板（9）包括前基板（1a）和后基板（1b），以及设置在这些基板之间的液晶层（3）。 密封件（4）用于将前基板（1a）和后基板（1b）结合在一起。 一对基板中的任一个与液晶层（3）接触的区域被划分为显示区域（6）和非显示区域（5）。 在显示区域（6）中，每单位面积的间隔物（2）的数量大于非显示区域（5）。 换句话说，显示区域（6）和非显示区域（5）之间的间隔物（2）的密度不同，并且间隔物（2）的密度在显示区域（6）中高于 在非显示区域（5）中。 根据该结构，即使在外部的压力下，显示区域（6）也不能显着变形，因此非显示区域（5）由于压力而变形。

公开(公告)号：US20130021572A1

公开(公告)日：2013-01-24

申请号：US13637713

申请日：2011-01-21

申请人： Masao Urayama ,  Masanori Umeya ,  Atsushi Sugizaki

发明人： Masao Urayama ,  Masanori Umeya ,  Atsushi Sugizaki

IPC分类号： G02F1/1339

CPC分类号： G02F1/1339 ,  G02F1/13394

摘要： A liquid crystal display element (10) in accordance with the present invention includes: a pair of substrates (1), at least one of which is a flexible substrate; a liquid crystal layer (3) sealed in a gap between the pair of substrates (1); and spacer members (4), provided between the pair of substrates (1), which sustain the gap between the pair of substrates (1). A thickness of the liquid crystal layer (3) falls in a range of 93% to 98% of heights of the spacer members (4) while no pressure is applied to the spacer members. Adjacent spacer members (4) are provided at intervals of less than 400 μm.

摘要翻译： 根据本发明的液晶显示元件（10）包括：一对基板（1），其中至少一个是柔性基板; 密封在所述一对基板（1）之间的间隙中的液晶层（3）; 和间隔件（4），其设置在一对基板（1）之间，其维持所述一对基板（1）之间的间隙。 液晶层（3）的厚度在间隔件（4）的高度的93％至98％的范围内，而隔离件没有施加压力。 相邻的间隔件（4）以小于400μm的间隔设置。

公开(公告)号：US08173487B2

公开(公告)日：2012-05-08

申请号：US12530552

申请日：2008-04-01

申请人： Masao Urayama ,  Masashi Kawasaki ,  Hideo Ohno

发明人： Masao Urayama ,  Masashi Kawasaki ,  Hideo Ohno

IPC分类号： H01L29/12 ,  H01L21/20

CPC分类号： H01L29/7869 ,  H01L29/78696 ,  Y10S438/922

摘要： A thin-film transistor (1) of the present invention includes an insulating substrate (2), a gate electrode (3) which has a predetermined shape and is formed on the insulating substrate (2), a gate insulating film (4) formed on the gate electrode (3), and a semiconductor layer (5) which is polycrystalline ZnO and is formed on the gate insulating film (4). The semiconductor layer (5) is immersed in a solution in which impurities are dissolved so that the impurities are selectively added to a grain boundary part of the polycrystalline ZnO film. Subsequently, a source electrode (6) and a drain electrode (7) are formed so as to have a predetermined shape. Next, a protection layer (8) is formed on the source electrode (6) and the drain electrode (7). Thus, a thin-film transistor which has a good subthreshold characteristic and has a zinc oxide film as a base of an active layer can be realized.

摘要翻译： 本发明的薄膜晶体管（1）包括绝缘基板（2），具有预定形状并形成在绝缘基板（2）上的栅电极（3），形成有栅极绝缘膜（4） 在栅电极（3）上形成半导体层（5），并形成在栅极绝缘膜（4）上。 将半导体层（5）浸渍在杂质溶解的溶液中，使杂质选择性地添加到多晶ZnO膜的晶界部分。 随后，源电极（6）和漏电极（7）形成为具有预定形状。 接下来，在源电极（6）和漏电极（7）上形成保护层（8）。 因此，可以实现具有良好的亚阈值特性并且具有氧化锌膜作为有源层的基底的薄膜晶体管。

公开(公告)号：US07375366B2

公开(公告)日：2008-05-20

申请号：US10204670

申请日：2001-02-22

申请人： Hiroshi Ohki ,  Tsunaki Tsunesada ,  Masao Urayama ,  Takashi Kyotani ,  Keitarou Matsui ,  Akira Tomita

发明人： Hiroshi Ohki ,  Tsunaki Tsunesada ,  Masao Urayama ,  Takashi Kyotani ,  Keitarou Matsui ,  Akira Tomita

IPC分类号： B82B1/00

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/16 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/00 ,  Y10S977/952 ,  Y10T428/249929 ,  Y10T428/2975

摘要： A carbon nanotube has a carbon network film of polycrystalline structure divided into crystal regions along the axis of the tube, and the length along the tube axis of each crystal region preferably ranges from 3 to 6 nm. An electron source includes a carbon nanotube having a cylindrical shape and the end of which on the substrate side is closed and disposed in a fine hole. The end on the substrate side of the tube is firmly adhered to the substrate. The carbon nanotube is produced by a method in which carbon is deposited under the condition that no metal catalyst is present in the fine hole and produced by a method in which after the carbon deposition the end of the carbon deposition film is modified by etching the carbon deposition film using a plasma. Therefore, an electron source excellent in the evenness of field emission characteristics in a field emission region (pixel) in the device plane and driven with low voltage can be provided, and a display operated with ultralow power consumption exhibiting ultrahigh luminance can be provided.

摘要翻译： 碳纳米管具有沿着管轴分成晶体区域的多晶结构的碳网膜，并且沿着各晶体区域的管轴的长度优选为3〜6nm。 电子源包括具有圆筒形状的碳纳米管，其基底侧的端部封闭并设置在细孔中。 管的衬底侧的端部牢固地粘附到衬底上。 碳纳米管是通过在细孔中不存在金属催化剂的条件下沉积碳的方法制造的，其方法是通过碳沉积后，通过蚀刻碳来改变碳沉积膜的端部 使用等离子体的沉积膜。 因此，可以提供在器件平面中的场发射区域（像素）中的场发射特性的均匀性优异的电子源，并且以低电压驱动，并且可以提供以超高亮度显示的超低功耗的显示器。

公开(公告)号：US07078863B2

公开(公告)日：2006-07-18

申请号：US10381477

申请日：2001-09-27

申请人： Tetsuya Ide ,  Junichi Sawahata ,  Masao Urayama

发明人： Tetsuya Ide ,  Junichi Sawahata ,  Masao Urayama

IPC分类号： G09G3/10

CPC分类号： H01J29/488 ,  H01J1/304 ,  H01J3/021 ,  H01J3/029 ,  H01J29/467 ,  H01J2329/00

摘要： A cold-cathode electron source having an improved utilization efficiency of an electron beam and a simple structure. The cold-cathode electron source comprises a gate electrode (4) provided on a substrate (2) through an insulating layer (3) and an emitter (6) extending through the insulating layer (3) and the gate electrode (4) and disposed in an opening of the gate. During the emission of electrons from the emitter (6), the following relationships are satisfied: 10 [V/μm]≧(Va−Vg)/(Ha−Hg)≧Vg/Hg; and Vg/Hg [V/μm]≧Va×10−4×(9.7−1.3×1n(Hg))×(1000/Ha)0.5, where Ha [μm] is an anode-emitter distance, Va [V] is an anode-emitter voltage, Hg [μm] is a gate-emitter distance, and Vg [V] is a gate-emitter voltage.

摘要翻译： 具有提高电子束的利用效率和简单结构的冷阴极电子源。 冷阴极电子源包括通过绝缘层（3）设置在基板（2）上的栅极（4）和延伸穿过绝缘层（3）和栅电极（4）的发射极（6） 在门口的开口。 在从发射体（6）发射电子的过程中，满足以下关系：10 V / V m =（Va-Vg）/（Ha-Hg）> = Vg / Hg; 和Vg / Hg [V / mum] = Vax10-4×（9.7-1.3x1n（Hg））x（1000 / Ha）<0.5>其中Ha ]是阳极 - 发射极距离，Va [V]是阳极 - 发射极电压，Hg [m]是栅 - 发射极距离，Vg [V]是栅 - 发射极电压。

公开(公告)号：US5800233A

公开(公告)日：1998-09-01

申请号：US599315

申请日：1996-02-09

申请人： Seiki Yano ,  Masao Urayama ,  Yoshiyuki Takegawa ,  Yuko Morita

发明人： Seiki Yano ,  Masao Urayama ,  Yoshiyuki Takegawa ,  Yuko Morita

IPC分类号： H01J1/30 ,  H01J1/304 ,  H01J9/02 ,  H01J9/40

CPC分类号： H01J9/025

摘要： A cathode is formed on a glass substrate by depositing nickel thereon, and silicon dioxide is allowed to accumulate on the cathode by sputtering to form an insulator film. Then, a gate electrode is provided on the insulator film by depositing nickel thereon. A hole is formed on the glass substrate by lithography to carry out patterning, and the gate electrode and the insulator film are selectively etched to create a hole for the formation of an emitter emitting electrons. Furthermore, nickel is stacked into the hole by deposition to form the emitter, and subsequently the emitter is covered with sulfur as a high vapor-pressure substance to form a high vapor-pressure substance layer.

摘要翻译： 通过在其上沉积镍在玻璃基板上形成阴极，并且通过溅射使二氧化硅积聚在阴极上以形成绝缘膜。 然后，通过在其上沉积镍，在绝缘膜上设置栅电极。 通过光刻在玻璃基板上形成孔以进行图案化，并且选择性地蚀刻栅电极和绝缘膜，以形成用于形成发射电子的发射极的孔。 此外，通过沉积将镍堆积到孔中以形成发射极，随后用硫作为高蒸气压物质覆盖发射体以形成高蒸气压物质层。

公开(公告)号：US20100044702A1

公开(公告)日：2010-02-25

申请号：US12530552

申请日：2008-04-01

申请人： Masao Urayama ,  Masashi Kawasaki ,  Hideo Ohno

发明人： Masao Urayama ,  Masashi Kawasaki ,  Hideo Ohno

IPC分类号： H01L29/12 ,  H01L21/20

CPC分类号： H01L29/7869 ,  H01L29/78696 ,  Y10S438/922

摘要： A thin-film transistor (1) of the present invention includes an insulating substrate (2), a gate electrode (3) which has a predetermined shape and is formed on the insulating substrate (2), a gate insulating film (4) formed on the gate electrode (3), and a semiconductor layer (5) which is polycrystalline ZnO and is formed on the gate insulating film (4). The semiconductor layer (5) is immersed in a solution in which impurities are dissolved so that the impurities are selectively added to a grain boundary part of the polycrystalline ZnO film. Subsequently, a source electrode (6) and a drain electrode (7) are formed so as to have a predetermined shape. Next, a protection layer (8) is formed on the source electrode (6) and the drain electrode (7). Thus, a thin-film transistor which has a good subthreshold characteristic and has a zinc oxide film as a base of an active layer can be realized.

摘要翻译： 本发明的薄膜晶体管（1）包括绝缘基板（2），具有预定形状并形成在绝缘基板（2）上的栅电极（3），形成有栅极绝缘膜（4） 在栅电极（3）上形成半导体层（5），并形成在栅极绝缘膜（4）上。 将半导体层（5）浸渍在杂质溶解的溶液中，使杂质选择性地添加到多晶ZnO膜的晶界部分。 随后，源电极（6）和漏电极（7）形成为具有预定形状。 接下来，在源电极（6）和漏电极（7）上形成保护层（8）。 因此，可以实现具有良好的亚阈值特性并且具有氧化锌膜作为有源层的基底的薄膜晶体管。

公开(公告)号：US06741017B1

公开(公告)日：2004-05-25

申请号：US09620999

申请日：2000-07-21

申请人： Tetsuya Ide ,  Masao Urayama

发明人： Tetsuya Ide ,  Masao Urayama

IPC分类号： H01J102

CPC分类号： B82Y10/00 ,  H01J1/3048 ,  H01J2201/30469 ,  Y10S977/939

摘要： Disclosed is a cold cathode electron source characterized in that a cold cathode material which can achieve electron emission in a low electric field (e.g., a carbon nanotube), necessary constituent elements are provided individually in uncalcined ceramic sheets (green sheets 21, 43, 46) and the sheets are laminated and calcined to form an integral structure. The electron source can be manufactured by forming through-holes 20 in a flat plate, charging a conductive paste 30 containing carbon nanotubes 31 dispersed therein into the through-holes 20 by vacuum suction, thereby causing to orient the carbon nanotubes 31 in the axis direction of the through-hoes 20. The electron source is useful for the low-cost manufacture of a device with a cold cathode electron source which can achieve ready vacuum evacuation and maintenance of the vacuum level, as well as a high emission current density at a low voltage.

摘要翻译： 公开了一种冷阴极电子源，其特征在于，在未煅烧的陶瓷片（生片21,43,46）中分别设置可在低电场（例如，碳纳米管）中实现电子发射的冷阴极材料，必要的构成元件 ），并将片材层压并煅烧以形成整体结构。 可以通过在平板中形成通孔20来制造电子源，通过真空抽吸将分散在其中的含有碳纳米管31的导电膏30加载到通孔20中，从而使碳纳米管31沿轴向取向 电子源可用于低成本制造具有冷阴极电子源的器件，该器件可以实现即时真空抽真空和维持真空度，以及高的发射电流密度 低电压。

公开(公告)号：US20130027652A1

公开(公告)日：2013-01-31

申请号：US13637621

申请日：2011-03-29

申请人： Masao Urayama ,  Joji Kawamura

发明人： Masao Urayama ,  Joji Kawamura

IPC分类号： G02F1/1339

CPC分类号： G02F1/13394 ,  G02F1/133305 ,  G02F1/1339 ,  G02F2001/13398

摘要： A liquid crystal display element (10) in accordance with the present invention includes (i) a pair of substrates (1), at least one of which is a flexible substrate, (ii) a liquid crystal (3) with which a gap between the pair of substrates (1) is filled, (iii) a spacer member (4) having a height so as to sustain a thickness of the liquid crystal (3), (iv) a sealant (2) for allowing the gap to be filled with the liquid crystal (3), and (v) a barrier (5) for causing a liquid crystal filling region to be divided into (a) a first region including a display region and (b) a second region located outside the first region. The barrier (5) is attached to one substrate (1b) of the pair of the substrates (1), and is in close contact with, but not attached to, the other substrate (1a).

摘要翻译： 根据本发明的液晶显示元件（10）包括（i）一对基板（1），其中至少一个是柔性基板，（ii）液晶（3），其间具有间隙 填充一对基板（1），（iii）具有高度以保持液晶（3）的厚度的间隔件（4），（iv）用于允许间隙的密封剂（2） 充满液晶（3），和（v）用于使液晶填充区域分为（a）包括显示区域的第一区域和（b）位于第一 地区。 所述阻挡层（5）与所述一对基板（1）的一个基板（1b）连接，与另一基板（1a）紧密接触，但不附着于所述基板。

公开(公告)号：US07030550B2

公开(公告)日：2006-04-18

申请号：US10470488

申请日：2002-02-01

申请人： Tetsuya Ide ,  Junichi Sawahata ,  Masao Urayama

发明人： Tetsuya Ide ,  Junichi Sawahata ,  Masao Urayama

IPC分类号： H01J1/02

CPC分类号： H01J3/022 ,  H01J2329/00

摘要： Low-cost electron emission device and field emission display using a cold cathode electron source having a high electron beam utilization efficiency and capable of controlling the spread of the electron beam. Under the condition Ea≧Eg, the electric field strength near the gate electrode forming an electron emission control unit is varied between a central portion and a peripheral portion in the plane of a single pixel (or sub-pixel), thereby controlling the spread of the electron beam. A device using a field emission-type electron source array capable of achieving a high emission current density at low voltage can be realized at low cost.

摘要翻译： 使用具有高电子束利用效率并能够控制电子束扩散的冷阴极电子源的低成本电子发射器件和场致发射显示器。 在条件Ea> = Eg下，形成电子发射控制单元的栅电极附近的电场强度在单个像素（或子像素）的平面中的中心部分和周边部分之间变化，从而控制扩展 的电子束。 可以以低成本实现能够实现低电压下的高发射电流密度的场致发射型电子源阵列的装置。