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14 条记录 (耗时 0.016 秒)

    Electron-emitting material and preparing process
    2.
    发明授权
    Electron-emitting material and preparing process 失效
    电子发射材料及制备方法

    公开(公告)号：US06383416B1

    公开(公告)日：2002-05-07

    申请号：US09517571

    申请日：2000-03-02

    申请人： Munemitsu Hamada ,  Akira Takeishi ,  Makoto Takahashi ,  Dai Matsuoka ,  Masatada Yodogawa ,  Hiraku Harada

    发明人： Munemitsu Hamada ,  Akira Takeishi ,  Makoto Takahashi ,  Dai Matsuoka ,  Masatada Yodogawa ,  Hiraku Harada

    IPC分类号： H01B106

    CPC分类号： H01J1/142 ,  H01J9/04

    摘要： An electron-emitting material contains a first metal component selected from Ba, Sr and Ca and a second metal component selected from Ta, Zr, Nb, Ti and Hf and also contains oxynitride perovskite. The electron-emitting material has improved electron emission characteristics, restrained evaporation at elevated temperatures, and minimized consumption by ion sputtering. The electron-emitting material is prepared by firing a metal component-containing raw material disposed in proximity to carbon in a nitrogen gas-containing atmosphere to thereby create oxynitride perovskite.

    摘要翻译： 电子发射材料包含选自Ba，Sr和Ca的第一金属成分和选自Ta，Zr，Nb，Ti和Hf的第二金属成分，并且还含有氮氧化物钙钛矿。 电子发射材料具有改善的电子发射特性，在升高的温度下抑制蒸发，并通过离子溅射最小化消耗。 电子发射材料通过在含氮气体气氛中焙烧设置在碳附近的含金属成分的原料制备，从而产生钙钛矿的氮氧化物。

    Resistive temperature sensor and manufacturing method therefor
    3.
    发明授权
    Resistive temperature sensor and manufacturing method therefor 失效
    电阻式温度传感器及其制造方法

    公开(公告)号：US6140906A

    公开(公告)日：2000-10-31

    申请号：US967110

    申请日：1997-11-10

    申请人： Nobuo Kaihara ,  Minoru Ogasawara ,  Masatada Yodogawa

    发明人： Nobuo Kaihara ,  Minoru Ogasawara ,  Masatada Yodogawa

    IPC分类号： G01K7/18 ,  H01C7/10

    CPC分类号： G01K7/183 ,  Y10T29/49082

    摘要： A resistive temperature sensor is constituted by an insulating body mainly composed of alumina; and a temperature sensing resistor mainly composed of a conductive material containing a metal silicide. The insulating body and the temperature sensing resistor are laminated and sintered to form a lamination sintered body in which a resistance circuit is formed.

    摘要翻译： 电阻温度传感器由主要由氧化铝组成的绝缘体构成; 以及主要由含有金属硅化物的导电材料构成的温度检测电阻。 绝缘体和温度感测电阻器被层压并烧结以形成其中形成电阻电路的层叠烧结体。

    Voltage non-linear resistor
    4.
    发明授权
    Voltage non-linear resistor 失效
    电压非线性电阻

    公开(公告)号：US4320379A

    公开(公告)日：1982-03-16

    申请号：US184953

    申请日：1980-09-08

    申请人： Masatada Yodogawa

    发明人： Masatada Yodogawa

    IPC分类号： H01C7/112 ,  H01C7/10

    CPC分类号： H01C7/112

    摘要： A voltage non-linear resistor comprises a sintered body of a ceramic composition comprising zinc oxide at a ratio of 99.88 to 84.88 mol % as ZnO; a praseodymium oxide component at a ratio of 0.01 to 0.035 mol % as Pr.sub.2 O.sub.3 and a lanthanum oxide component at a ratio of 0.01 to 0.035 mol % as La.sub.2 O.sub.3 and a cobalt oxide component at a ratio of 0.1 to 15 mol % as CoO and a specific additional component selected from chromium oxide, boron oxide, silicon oxide, titanium oxide, tin oxide, zirconium oxide, niobium oxide, tantalum oxide, tungsten oxide and germanium oxide at a ratio of 0.0001 to 0.05 mol %.

    摘要翻译： 电压非线性电阻器包括陶瓷组合物的烧结体，其包含氧化锌，其比例为99.88至84.88mol％; ZnO; 作为Pr 2 O 3的比例为0.01〜0.035摩尔％的氧化镨成分和作为LaO 2的比例为0.01〜0.035摩尔％的氧化镧成分和比例为0.1〜15摩尔％的氧化钴成分为CoO，特定的 比例为0.0001〜0.05摩尔％的选自氧化铬，氧化硼，氧化硅，氧化钛，氧化锡，氧化锆，氧化铌，氧化钽，氧化钨，氧化锗的附加成分。

    Rapid temperature rise heater element
    6.
    发明授权
    Rapid temperature rise heater element 失效
    快速升温加热元件

    公开(公告)号：US5773158A

    公开(公告)日：1998-06-30

    申请号：US579422

    申请日：1995-12-27

    申请人： Kentaro Sawamura ,  Etsuo Mitsuhashi ,  Masaru Nanao ,  Nobuyuki Miki ,  Masahiro Kitajima ,  Masatada Yodogawa

    发明人： Kentaro Sawamura ,  Etsuo Mitsuhashi ,  Masaru Nanao ,  Nobuyuki Miki ,  Masahiro Kitajima ,  Masatada Yodogawa

    IPC分类号： F23Q7/00 ,  H05B3/14 ,  B32B9/00

    CPC分类号： H05B3/141 ,  F23Q7/001 ,  F23Q2007/004

    摘要： The invention provides a rapid temperature rise heater element comprising an exothermic section (1) and a lead section (2), the exothermic section (1) comprising an exothermic section conductor of ceramic material which includes at least four stacked exothermic section conductive layers (1a) with an exothermic section insulating layer (1c) of ceramic material interposed therebetween and connections (1b) each for connecting adjacent exothermic section conductive layers (1a). The lead section (2) includes first and second lead section conductive layers (2a and 2b) electrically connected to the uppermost and lowermost exothermic section conductive layers (1a), respectively, the first and second lead section conductive layers (2a and 2b) being stacked with a lead section insulating layer (2c) of ceramic material interposed therebetween. A durable rapid temperature rise heater element can be efficiently fabricated at low cost while maintaining heater performance.

    摘要翻译： 本发明提供了一种包括放热部分（1）和引线部分（2）的快速升温加热器元件，所述放热部分（1）包括陶瓷材料的放热部分导体，其包括至少四个层叠的放热部分导电层 ），其间插入陶瓷材料的放热部绝缘层（1c），以及用于连接相邻的放热部分导电层（1a）的连接（1b）。 引线部分（2）包括分别与最上部和最下部的放热部分导电层（1a）电连接的第一和第二引线部分导电层（2a和2b），第一和第二引线部分导电层（2a和2b） 层叠有介于其间的陶瓷材料的引线部绝缘层（2c）。 可以以低成本有效地制造耐用的快速升温加热器元件，同时保持加热器性能。

    Voltage-dependent nonlinear resistor
    7.
    发明授权
    Voltage-dependent nonlinear resistor 失效
    电压相关非线性电阻

    公开(公告)号：US5640136A

    公开(公告)日：1997-06-17

    申请号：US244380

    申请日：1994-06-09

    申请人： Masatada Yodogawa ,  Toshiyuki Yamazaki ,  Hitomi Naitou ,  Masahito Furukawa ,  Dai Matsuoka

    发明人： Masatada Yodogawa ,  Toshiyuki Yamazaki ,  Hitomi Naitou ,  Masahito Furukawa ,  Dai Matsuoka

    IPC分类号： H01C7/112 ,  H01C7/10

    CPC分类号： H01C7/112

    摘要： The invention provides a voltage-dependent nonlinear resistor porcelain in the form of a ZnO system sintered body comprising zinc oxide as a major component and at least one of rare earth element oxides, cobalt oxide, chromium oxide, at least one of Group IIIb element oxides, at least one of Group Ia element oxides, 0.01 to 2 atom % calculated as Ca of calcium oxide, and 0.001 to 0.5 atom % calculated as Si of silicon oxide as subordinate components, the atomic ratio of calcium to silicon (Ca/Si) ranging from 0.2 to 20. With the atomic ratio of calcium to silicon (Ca/Si) set between 0.2 and 20, preferably between 2 and 6, the element has a significantly increased load life at high temperature and humidity. The element experiences less deterioration of the asymmetry of its volt-ampere characteristic between different directions of DC conduction. If magnesium oxide is added to the composition in an amount of 0.05 to 10 atom % calculated as Mg, the benefits are enhanced, with grain growth suppressed and leakage current minimized even on high temperature firing.

    摘要翻译： PCT No.PCT / JP93 / 01456 Sec。 371日期：1994年6月9日 102（e）日期1994年6月9日PCT提交1993年10月8日PCT公布。 第WO94 / 09499号公报 日期1994年04月28日本发明提供一种以氧化锌为主要成分的ZnO系烧结体形式的电压依赖型非线性电阻器瓷，至少一种稀土元素氧化物，氧化钴，氧化铬，至少一种 的IIIb族元素氧化物，Ia族元素氧化物中的至少一种，作为氧化钙的Ca计算的0.01〜2原子％，作为Si的氧化硅作为下属成分计算的0.001〜0.5原子％，钙与硅的原子比 （Ca / Si）范围为0.2至20.由于钙与硅的原子比（Ca / Si）设定在0.2至20之间，优选为2至6，元素在高温和高湿下的负载寿命显着增加。 该元件在DC传导的不同方向之间的伏安特性的不对称性较差。 如果以Mg计为0.05〜10原子％的量向组合物中添加了氧化镁，则能够抑制晶粒生长，甚至在高温烧成时也使漏电流最小化。

    Semiconducting ceramics containing vanadium oxide
    9.
    发明授权
    Semiconducting ceramics containing vanadium oxide 失效
    含有氧化钒的半导体陶瓷

    公开(公告)号：US4022716A

    公开(公告)日：1977-05-10

    申请号：US658720

    申请日：1976-02-17

    申请人： Hisayoshi Ueoka ,  Masatada Yodogawa

    发明人： Hisayoshi Ueoka ,  Masatada Yodogawa

    IPC分类号： C04B35/468 ,  H01B1/08 ,  H01C7/02

    CPC分类号： C04B35/4682 ,  H01B1/08 ,  H01C7/025

    摘要： Semiconducting ceramics are produced by firing a semiconducting composition of the barium titanate type containing vanadium oxide in the amount of 0.001 to 0.5 wt%. A change in the specific resistance over the range of the temperature at which the positive temperature coefficient characteristic of resistivity (PTCR) is exhibited can be increased by as much as 10.sup.5 times and the specific resistance value at room temperature can be controlled at a desired value. By further adding silicon dioxide to the above composition in the amount of 0.05 to 1.5 wt% the above effects can be enhanced, especially the specific resistance at ambient temperature.

    摘要翻译： 通过以0.001-0.5wt％的量焙烧含有钛酸钡的氧化钒的半导体组合物制备半导体陶瓷。 在电阻率（PTCR）的正温度系数特性的温度范围内的电阻率的变化可以增加多达105次，并且可以将室温下的电阻率控制在期望值 。 通过进一步向上述组合物中添加0.05〜1.5重量％的二氧化硅，可以提高上述效果，特别是环境温度下的电阻率。