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公开(公告)号：US20050019678A1
公开(公告)日：2005-01-27
申请号：US10897078
申请日：2004-07-23
CPC分类号： G03F1/60
摘要： A photomask blank substrate is selected for use in a process where at least a masking film or a phase shift film is deposited on a top surface of a photomask blank substrate to form a photomask blank, the deposited film is patterned to form a photomask, and the photomask is mounted in an exposure tool. The substrate is selected by simulating a change in shape in the top surface of the substrate, from prior to film deposition thereon to when the photomask is mounted in the exposure tool; determining the shape of the substrate top surface prior to the change that will impart to the top surface a flat shape when the photomask is mounted in the exposure tool; and selecting, as an acceptable substrate, a substrate having this top surface shape. The selected substrate has an optimized top surface shape that improves productivity in photomask fabrication.
摘要翻译： 选择光掩模空白基板用于至少掩模膜或相移膜沉积在光掩模坯料基板的顶表面上以形成光掩模坯料的方法中，将沉积的膜图案化以形成光掩模，并且 光掩模安装在曝光工具中。 通过在其上形成膜之前，当将光掩模安装在曝光工具中时，通过模拟衬底的顶表面中的形状变化来选择衬底; 在所述变化之前确定所述衬底顶表面的形状，当所述光掩模安装在所述曝光工具中时，所述形状将赋予所述顶表面平坦的形状; 并且选择具有该顶表面形状的基板作为可接受的基板。 所选择的基底具有优化的顶表面形状，其提高光掩模制造的生产率。
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公开(公告)号：US07344808B2
公开(公告)日：2008-03-18
申请号：US10896946
申请日：2004-07-23
IPC分类号： G03F1/00
CPC分类号： G03F1/60
摘要： A photomask blank substrate is made by polishing a starting substrate to a specific flatness in a principal surface region on a top surface of the substrate so as to form a polished intermediate product, then additionally polishing the intermediate product. Substrates made in this way exhibit a good surface flatness at the time of wafer exposure. When a photomask fabricated from a blank obtained from such a substrate is held on the mask stage of a wafer exposure system with a vacuum chuck, the substrate surface undergoes minimal warping, enabling exposure patterns of small geometry to be written onto wafers to good position and linewidth accuracies.
摘要翻译： 通过将起始基板研磨到基板顶面的主表面区域中的特定平坦度，制成光掩模坯料，以形成抛光的中间产品，然后另外抛光中间产品。 以这种方式制成的基板在晶片曝光时表现出良好的表面平坦度。 当从由这种基板获得的坯料制成的光掩模被保持在具有真空卡盘的晶片曝光系统的掩模台上时，基板表面经历最小的翘曲，使得几何形状的曝光图案能够被写入晶片到良好的位置， 线宽精度。
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公开(公告)号：US07329475B2
公开(公告)日：2008-02-12
申请号：US10896968
申请日：2004-07-23
申请人： Masayuki Nakatsu , Tsuneo Numanami , Masayuki Mogi , Masamitsu Itoh , Tsuneyuki Hagiwara , Naoto Kondo
发明人： Masayuki Nakatsu , Tsuneo Numanami , Masayuki Mogi , Masamitsu Itoh , Tsuneyuki Hagiwara , Naoto Kondo
IPC分类号： G03F1/00
CPC分类号： G03F1/60
摘要： Provided that a pair of strip-like regions extend from 2 mm to 10 mm inside each of a pair of opposing sides along an outer periphery of a top surface of a substrate on which a mask pattern is to be formed, with a 2 mm edge portion excluded at each end in a lengthwise direction thereof, the height from a least squares plane for the strip-like regions on the substrate top surface to the strip-like regions is measured at intervals of 0.05-0.35 mm in horizontal and vertical directions, and a substrate in which the difference between the maximum and minimum values for the height among all the measurement points is νoτ μoρε τηαν 0.5 μm is selected.
摘要翻译： 假设一对条状区域沿着要形成掩模图案的基板的顶表面的外周的一对相对侧的每一个内部从2mm延伸到10mm，具有2mm的边缘 在其长度方向上的每一端排除的部分，在水平和垂直方向上以0.05-0.35mm的间隔测量从衬底顶表面上的带状区域到条状区域的最小二乘平面的高度， 并且选择其中所有测量点中的高度的最大值和最小值之间的差值为0.5微米的磷酸三钙的基底。
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公开(公告)号：US20050020083A1
公开(公告)日：2005-01-27
申请号：US10896946
申请日：2004-07-23
IPC分类号： B24B7/22 , G03F1/50 , G03F1/60 , H01L21/4763
CPC分类号： G03F1/60
摘要： A photomask blank substrate is made by polishing a starting substrate to a specific flatness in a principal surface region on a top surface of the substrate so as to form a polished intermediate product, then additionally polishing the intermediate product. Substrates made in this way exhibit a good surface flatness at the time of wafer exposure. When a photomask fabricated from a blank obtained from such a substrate is held on the mask stage of a wafer exposure system with a vacuum chuck, the substrate surface undergoes minimal warping, enabling exposure patterns of small geometry to be written onto wafers to good position and linewidth accuracies.
摘要翻译： 通过将起始基板研磨到基板顶面的主表面区域中的特定平坦度，制成光掩模坯料，以形成抛光的中间产品，然后另外抛光中间产品。 以这种方式制成的基板在晶片曝光时表现出良好的表面平坦度。 当从由这种基板获得的坯料制成的光掩模被保持在具有真空卡盘的晶片曝光系统的掩模台上时，基板表面经历最小的翘曲，使得几何形状的曝光图案能够被写入晶片到良好的位置， 线宽精度。
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公开(公告)号：US20050019677A1
公开(公告)日：2005-01-27
申请号：US10896970
申请日：2004-07-23
申请人： Masayuki Nakatsu , Tsuneo Numanami , Masayuki Mogi , Masamitsu Itoh , Tsuneyuki Hagiwara , Naoto Kondo
发明人： Masayuki Nakatsu , Tsuneo Numanami , Masayuki Mogi , Masamitsu Itoh , Tsuneyuki Hagiwara , Naoto Kondo
CPC分类号： G03F1/60
摘要： In a quadrangular photomask blank substrate with a length on each side of at least 6 inches, which has a pair of strip-like regions that extend from 2 to 10 mm inside each of a pair of opposing sides along an outer periphery of a substrate top surface, with a 2 mm edge portion excluded at each end, each strip-like region is inclined downward toward the outer periphery of the substrate, and a difference between maximum and minimum values for height from a least squares plane for the strip-like region to the strip-like region is at most 0.5 μm. The substrate exhibits a good surface flatness at the time of wafer exposure.
摘要翻译： 在四边形光掩模空白基板中，每个边上的长度至少为6英寸，其具有沿着基板顶部的外周边的一对相对侧的每一侧内从2至10mm延伸的一对条状区域 表面，每个端部排除2mm边缘部分，每个条状区域朝向基板的外周向下倾斜，并且对于带状区域，从最小二乘平面的最大值和最小值之间的差异 带状区域最多为0.5μm。 在晶片曝光时，基板表现出良好的表面平坦度。
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公开(公告)号：US20050019676A1
公开(公告)日：2005-01-27
申请号：US10896968
申请日：2004-07-23
申请人： Masayuki Nakatsu , Tsuneo Numanami , Masayuki Mogi , Masamitsu Itoh , Tsuneyuki Hagiwara , Naoto Kondo
发明人： Masayuki Nakatsu , Tsuneo Numanami , Masayuki Mogi , Masamitsu Itoh , Tsuneyuki Hagiwara , Naoto Kondo
IPC分类号： G03F1/50 , G03F1/60 , G03F9/00 , H01L21/027
CPC分类号： G03F1/60
摘要： Provided that a pair of strip-like regions extend from 2 mm to 10 mm inside each of a pair of opposing sides along an outer periphery of a top surface of a substrate on which a mask pattern is to be formed, with a 2 mm edge portion excluded at each end in a lengthwise direction thereof, the height from a least squares plane for the strip-like regions on the substrate top surface to the strip-like regions is measured at intervals of 0.05-0.35 mm in horizontal and vertical directions, and a substrate in which the difference between the maximum and minimum values for the height among all the measurement points is μoτ μoρε τηαν 0.5 μm is selected.
摘要翻译： 假设一对条状区域沿着要形成掩模图案的基板的顶表面的外周的一对相对侧的每一个内部从2mm延伸到10mm，具有2mm的边缘 在其长度方向上的每一端排除的部分，在水平和垂直方向上以0.05-0.35mm的间隔测量从衬底顶表面上的带状区域到条状区域的最小二乘平面的高度， 并且选择其中所有测量点中的高度的最大值和最小值之间的差为muotau muorhoepsilon tauetaalphanu 0.5um的衬底。
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公开(公告)号：US07351504B2
公开(公告)日：2008-04-01
申请号：US10896970
申请日：2004-07-23
申请人： Masayuki Nakatsu , Tsuneo Numanami , Masayuki Mogi , Masamitsu Itoh , Tsuneyuki Hagiwara , Naoto Kondo
发明人： Masayuki Nakatsu , Tsuneo Numanami , Masayuki Mogi , Masamitsu Itoh , Tsuneyuki Hagiwara , Naoto Kondo
IPC分类号： G03F1/00
CPC分类号： G03F1/60
摘要： In a quadrangular photomask blank substrate with a length on each side of at least 6 inches, which has a pair of strip-like regions that extend from 2 to 10 mm inside each of a pair of opposing sides along an outer periphery of a substrate top surface, with a 2 mm edge portion excluded at each end, each strip-like region is inclined downward toward the outer periphery of the substrate, and a difference between maximum and minimum values for height from a least squares plane for the strip-like region to the strip-like region is at most 0.5 μm. The substrate exhibits a good surface flatness at the time of wafer exposure.
摘要翻译： 在四边形光掩模空白基板中，每个边上的长度至少为6英寸，其具有沿着基板顶部的外周边的一对相对侧的每一侧内从2至10mm延伸的一对条状区域 表面，每个端部排除2mm边缘部分，每个条状区域朝向基板的外周向下倾斜，并且对于带状区域，从最小二乘平面的最大值和最小值之间的差异 带状区域最多为0.5μm。 在晶片曝光时，基板表现出良好的表面平坦度。
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公开(公告)号：US07070888B2
公开(公告)日：2006-07-04
申请号：US10897078
申请日：2004-07-23
IPC分类号： G03F9/00
CPC分类号： G03F1/60
摘要： A photomask blank substrate is selected for use in a process where at least a masking film or a phase shift film is deposited on a top surface of a photomask blank substrate to form a photomask blank, the deposited film is patterned to form a photomask, and the photomask is mounted in an exposure tool. The substrate is selected by simulating a change in shape in the top surface of the substrate, from prior to film deposition thereon to when the photomask is mounted in the exposure tool; determining the shape of the substrate top surface prior to the change that will impart to the top surface a flat shape when the photomask is mounted in the exposure tool; and selecting, as an acceptable substrate, a substrate having this top surface shape. The selected substrate has an optimized top surface shape that improves productivity in photomask fabrication.
摘要翻译： 选择光掩模空白基板用于至少掩模膜或相移膜沉积在光掩模坯料基板的顶表面上以形成光掩模坯料的工艺中，将沉积的膜图案化以形成光掩模，并且 光掩模安装在曝光工具中。 通过在其上形成膜之前，当将光掩模安装在曝光工具中时，通过模拟衬底的顶表面中的形状变化来选择衬底; 在所述变化之前确定所述衬底顶表面的形状，当所述光掩模安装在所述曝光工具中时，所述形状将赋予所述顶表面平坦的形状; 并且选择具有该顶表面形状的基板作为可接受的基板。 所选择的基底具有优化的顶表面形状，其提高光掩模制造的生产率。
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公开(公告)号：US07179567B2
公开(公告)日：2007-02-20
申请号：US10606894
申请日：2003-06-27
申请人： Yukio Inazuki , Masayuki Nakatsu , Tsuneo Numanami , Atsushi Tajika , Hideo Kaneko , Satoshi Okazaki
发明人： Yukio Inazuki , Masayuki Nakatsu , Tsuneo Numanami , Atsushi Tajika , Hideo Kaneko , Satoshi Okazaki
IPC分类号： G03F1/00
摘要： In a phase shift mask blank comprising a transparent substrate and a phase shift film thereon, after the phase shift film is formed on the substrate, it is surface treated with ozone water having an ozone concentration of at least 1 ppm. The resulting phase shift film is of quality in that it experiences minimized changes of phase difference and transmittance upon immersion in chemical liquid during subsequent mask cleaning step or the like.
摘要翻译： 在包括透明基板和相移膜的相移掩模坯料中，在基板上形成相移膜之后，用臭氧浓度为至少1ppm的臭氧水进行表面处理。 所得到的相移膜的质量在于，在随后的掩模清洁步骤等期间，其经历了在浸入化学液体中时相位差和透射率的最小化变化。
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公开(公告)号：US08812067B2
公开(公告)日：2014-08-19
申请号：US13428236
申请日：2012-03-23
IPC分类号： H01F6/06
CPC分类号： F17C1/00 , A61N5/1077 , A61N5/1081 , A61N2005/1087 , H01F6/02 , H01F6/04
摘要： A multi-orientation cryostat 5 for a superconducting magnet 4 for use in a plurality of orientations. The cryostat 5 comprises a vessel 6 for holding cryogenic liquid and, leading away from the vessel, a quench duct 7 for allowing escape from the vessel of gas generated by boiling of the cryogenic liquid due to quenching of the magnet. The quench duct 7 is sinuous so as to provide at least to differently orientated anti-convection portions 71, each portion for functioning as an anti-convection portion with the cryostat in a respective corresponding orientation.
摘要翻译： 用于多个取向的超导磁体4的多方位低温恒温器5。 低温恒温器5包括用于保持低温液体的容器6，并且远离容器导入淬火管道7，用于允许由于磁体淬火而使低温液体沸腾而产生的气体从容器中排出。 淬火管道7是弯曲的，以便至少提供不同定向的抗对流部分71，每个部分用作反应对流部分，低温恒温器处于相应的相应取向。
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