摘要:
A part of exposure beam through a liquid via a projection optical system enters a light-transmitting section, enters an optical member without passing through gas, and is focused. The exposure apparatus receives the exposure light from the projection optical system to perform various measurements even if the numerical aperture of the projection optical system increases.
摘要:
There is disclosed a wafer flatness evaluation method includes measuring front and rear surface shapes of a wafer. The wafer front surface measured is divided into sites. Then, a flatness calculating method is selected according to a position of the site to be evaluated and flatness in the wafer surface is acquired.
摘要:
An aerial image of a measurement mark (PM) arranged on a measurement mask (Rm) is conformed to a center in an X-axis direction of a slit (122) arranged on a Z tilt stage (38). While illuminating the measurement mark with an illumination light (IL), a slit plate (190) on which the slit (122) is formed is continuously moved in a Z-axis direction, and based on position information of the slit (122) obtained during the movement and a photoelectric conversion signal outputted from an optical sensor (24) that receives the illumination light (IL) from the measurement mark (PM) via a projection optical system (PL) and the slit (122), a best focus position is detected. Thus, the best focus position of the projection optical system can be measured in a short period of time.
摘要:
A main controller moves a reticle stage in a scanning direction, illuminates an area on a reticle including a mark area in which predetermined marks are formed with illumination light, forms an aerial image of at least one mark existing in the mark area via a projection optical system, and measures the aerial image using an aerial image measuring unit. The main controller repeatedly performs such aerial image measurement while moving the reticle stage in the scanning direction. Then, the main controller computes a scanning image plane on which an image of a pattern formed on a reticle is formed by the projection optical system, based on the measurement result of the aerial image of each mark at each movement position. Based on the computation result, the main controller performs focus leveling control of a wafer during scanning exposure. Thus, highly accurate exposure is realized without using a sensor for reticle (mask) position measurement.
摘要:
Since a wafer mark formed on a wafer has a periodic structure that weakens the intensity of even-order diffraction light rather than the intensity of odd-order diffraction light that is the reflected light of illumination light from a light source of an alignment system, measurement error of positional information of the wafer mark caused by the even-order diffraction light is reduced. Further, there is no need to set the duty ratio of the wafer mark to 1:1, so that the reflectance of the entire mark can be enhanced and it becomes possible to easily measure the mark position by the alignment system.
摘要:
The present invention discloses a mask defect inspection apparatus for optically detecting a defect on a mask having a circuit pattern, which comprises an illumination system for illuminating the mask with inspection light; a first light receiving optical system for receiving the inspection light reflected by the mask; a second light receiving optical system for receiving the inspection light transmitted by the mask; a first spatial filter for shielding the inspection light passing through a central region including the optical axis of the first light receiving optical system in an optical Fourier transform plane for the circuit pattern in the first light receiving optical system; a second spatial filter for shielding the inspection light passing through a central region including the optical axis of the second light receiving optical system in an optical Fourier transform plane for the circuit pattern in the second light receiving optical system; a first detector for photoelectrically converting the inspection light having passed through the first spatial filter; a second detector for photoelectrically converting the inspection light having passed through the second spatial filter; and a gain adjusting circuit for adjusting a gain of a first output signal from the first detector to output a third output signal and adjusting a gain of a second output signal from the second detector to output a fourth output signal, wherein the defect is detected based on either a relative intensity difference or intensity ratio between the third output signal and the fourth output signal gain-adjusted by the gain adjusting circuit.
摘要:
An optical scanning device includes a light deflection unit for deflecting a light beam emitted by a light source to be incident on an object to be irradiated, a polarization state adjusting unit for adjusting the polarization state of the light beam, so that the light beam to be incident on the object to be irradiated has a predetermined polarization state with respect to the object to be irradiated, and a rotary driving unit for rotating the light deflection unit and the polarization state adjusting unit together so that the light beam deflected by the light deflection unit scans the object to be irradiated.
摘要:
A simple signal processing system is utilized to detect defects on the surface of a substrate formed with a circuit pattern at high speed. Light flux from a light source illuminates an inspection point P on the wafer. The light flux from the inspection point P passes a Fourier transform lens and forms a Fourier transform spectrum of the circuit pattern on the inspection point P in the rear focal plane. From the Fourier transform spectrum, a Fourier transform spectrum including no defect information is eliminated by a spatial filter and thereafter the light flux is received by a photoelectric converting device. While the wafer is rotated by a turn table and shifted in a y direction, the spatial filter is rotated in synchronism with rotation of the wafer.
摘要:
An apparatus for inspecting defects and foreign substances on an object to be inspected comprises: an illumination optical system for illuminating a spot of illuminated area on a semiconductor wafer; a lens for executing Fourier transform of the patterns of said illuminated area; a spatial filter for blocking the components of the resultant Fourier transform images corresponding to the patterns having no defects; a lens for executing inverse Fourier transform of the light which is transmitted through the spatial filter to form images of the defect(s); and a photo detector array for receiving the images of the defect(s).
摘要:
A foreign particle detecting apparatus comprises a light source for radiating coherent light onto an object to be detected on a surface of which a circuit pattern is formed, a focusing device for focusing the light emitted from the light source onto the object to be detected at a predetermined angular aperture, a device for moving the incident light focused at the predetermined angular aperture relative to the object to be detected, and a detector for receiving scattered light produced upon incidence of the focused light onto the object to be detected, and which detects foreign matter on the object to be detected on the basis of an output signal from the detector. Foreign matter is discriminated from the circuit pattern on the basis of the output signal from the detector means. The detector comprises at least two light-receiving elements, separated by a spatial angle substantially equal to or slightly larger than the angular aperture of the incident light, for individually outputting signals.