-
公开(公告)号：US07329475B2
公开(公告)日：2008-02-12
申请号：US10896968
申请日：2004-07-23
申请人： Masayuki Nakatsu , Tsuneo Numanami , Masayuki Mogi , Masamitsu Itoh , Tsuneyuki Hagiwara , Naoto Kondo
发明人： Masayuki Nakatsu , Tsuneo Numanami , Masayuki Mogi , Masamitsu Itoh , Tsuneyuki Hagiwara , Naoto Kondo
IPC分类号： G03F1/00
CPC分类号： G03F1/60
摘要： Provided that a pair of strip-like regions extend from 2 mm to 10 mm inside each of a pair of opposing sides along an outer periphery of a top surface of a substrate on which a mask pattern is to be formed, with a 2 mm edge portion excluded at each end in a lengthwise direction thereof, the height from a least squares plane for the strip-like regions on the substrate top surface to the strip-like regions is measured at intervals of 0.05-0.35 mm in horizontal and vertical directions, and a substrate in which the difference between the maximum and minimum values for the height among all the measurement points is νoτ μoρε τηαν 0.5 μm is selected.
摘要翻译： 假设一对条状区域沿着要形成掩模图案的基板的顶表面的外周的一对相对侧的每一个内部从2mm延伸到10mm，具有2mm的边缘 在其长度方向上的每一端排除的部分，在水平和垂直方向上以0.05-0.35mm的间隔测量从衬底顶表面上的带状区域到条状区域的最小二乘平面的高度， 并且选择其中所有测量点中的高度的最大值和最小值之间的差值为0.5微米的磷酸三钙的基底。
-
公开(公告)号：US20050019677A1
公开(公告)日：2005-01-27
申请号：US10896970
申请日：2004-07-23
申请人： Masayuki Nakatsu , Tsuneo Numanami , Masayuki Mogi , Masamitsu Itoh , Tsuneyuki Hagiwara , Naoto Kondo
发明人： Masayuki Nakatsu , Tsuneo Numanami , Masayuki Mogi , Masamitsu Itoh , Tsuneyuki Hagiwara , Naoto Kondo
CPC分类号： G03F1/60
摘要： In a quadrangular photomask blank substrate with a length on each side of at least 6 inches, which has a pair of strip-like regions that extend from 2 to 10 mm inside each of a pair of opposing sides along an outer periphery of a substrate top surface, with a 2 mm edge portion excluded at each end, each strip-like region is inclined downward toward the outer periphery of the substrate, and a difference between maximum and minimum values for height from a least squares plane for the strip-like region to the strip-like region is at most 0.5 μm. The substrate exhibits a good surface flatness at the time of wafer exposure.
摘要翻译： 在四边形光掩模空白基板中，每个边上的长度至少为6英寸，其具有沿着基板顶部的外周边的一对相对侧的每一侧内从2至10mm延伸的一对条状区域 表面，每个端部排除2mm边缘部分，每个条状区域朝向基板的外周向下倾斜，并且对于带状区域，从最小二乘平面的最大值和最小值之间的差异 带状区域最多为0.5μm。 在晶片曝光时，基板表现出良好的表面平坦度。
-
公开(公告)号：US20050019676A1
公开(公告)日：2005-01-27
申请号：US10896968
申请日：2004-07-23
申请人： Masayuki Nakatsu , Tsuneo Numanami , Masayuki Mogi , Masamitsu Itoh , Tsuneyuki Hagiwara , Naoto Kondo
发明人： Masayuki Nakatsu , Tsuneo Numanami , Masayuki Mogi , Masamitsu Itoh , Tsuneyuki Hagiwara , Naoto Kondo
IPC分类号： G03F1/50 , G03F1/60 , G03F9/00 , H01L21/027
CPC分类号： G03F1/60
摘要： Provided that a pair of strip-like regions extend from 2 mm to 10 mm inside each of a pair of opposing sides along an outer periphery of a top surface of a substrate on which a mask pattern is to be formed, with a 2 mm edge portion excluded at each end in a lengthwise direction thereof, the height from a least squares plane for the strip-like regions on the substrate top surface to the strip-like regions is measured at intervals of 0.05-0.35 mm in horizontal and vertical directions, and a substrate in which the difference between the maximum and minimum values for the height among all the measurement points is μoτ μoρε τηαν 0.5 μm is selected.
摘要翻译： 假设一对条状区域沿着要形成掩模图案的基板的顶表面的外周的一对相对侧的每一个内部从2mm延伸到10mm，具有2mm的边缘 在其长度方向上的每一端排除的部分，在水平和垂直方向上以0.05-0.35mm的间隔测量从衬底顶表面上的带状区域到条状区域的最小二乘平面的高度， 并且选择其中所有测量点中的高度的最大值和最小值之间的差为muotau muorhoepsilon tauetaalphanu 0.5um的衬底。
-
公开(公告)号：US07351504B2
公开(公告)日：2008-04-01
申请号：US10896970
申请日：2004-07-23
申请人： Masayuki Nakatsu , Tsuneo Numanami , Masayuki Mogi , Masamitsu Itoh , Tsuneyuki Hagiwara , Naoto Kondo
发明人： Masayuki Nakatsu , Tsuneo Numanami , Masayuki Mogi , Masamitsu Itoh , Tsuneyuki Hagiwara , Naoto Kondo
IPC分类号： G03F1/00
CPC分类号： G03F1/60
摘要： In a quadrangular photomask blank substrate with a length on each side of at least 6 inches, which has a pair of strip-like regions that extend from 2 to 10 mm inside each of a pair of opposing sides along an outer periphery of a substrate top surface, with a 2 mm edge portion excluded at each end, each strip-like region is inclined downward toward the outer periphery of the substrate, and a difference between maximum and minimum values for height from a least squares plane for the strip-like region to the strip-like region is at most 0.5 μm. The substrate exhibits a good surface flatness at the time of wafer exposure.
摘要翻译： 在四边形光掩模空白基板中，每个边上的长度至少为6英寸，其具有沿着基板顶部的外周边的一对相对侧的每一侧内从2至10mm延伸的一对条状区域 表面，每个端部排除2mm边缘部分，每个条状区域朝向基板的外周向下倾斜，并且对于带状区域，从最小二乘平面的最大值和最小值之间的差异 带状区域最多为0.5μm。 在晶片曝光时，基板表现出良好的表面平坦度。
-
公开(公告)号：US07344808B2
公开(公告)日：2008-03-18
申请号：US10896946
申请日：2004-07-23
IPC分类号： G03F1/00
CPC分类号： G03F1/60
摘要： A photomask blank substrate is made by polishing a starting substrate to a specific flatness in a principal surface region on a top surface of the substrate so as to form a polished intermediate product, then additionally polishing the intermediate product. Substrates made in this way exhibit a good surface flatness at the time of wafer exposure. When a photomask fabricated from a blank obtained from such a substrate is held on the mask stage of a wafer exposure system with a vacuum chuck, the substrate surface undergoes minimal warping, enabling exposure patterns of small geometry to be written onto wafers to good position and linewidth accuracies.
摘要翻译： 通过将起始基板研磨到基板顶面的主表面区域中的特定平坦度，制成光掩模坯料，以形成抛光的中间产品，然后另外抛光中间产品。 以这种方式制成的基板在晶片曝光时表现出良好的表面平坦度。 当从由这种基板获得的坯料制成的光掩模被保持在具有真空卡盘的晶片曝光系统的掩模台上时，基板表面经历最小的翘曲，使得几何形状的曝光图案能够被写入晶片到良好的位置， 线宽精度。
-
公开(公告)号：US20050020083A1
公开(公告)日：2005-01-27
申请号：US10896946
申请日：2004-07-23
IPC分类号： B24B7/22 , G03F1/50 , G03F1/60 , H01L21/4763
CPC分类号： G03F1/60
摘要： A photomask blank substrate is made by polishing a starting substrate to a specific flatness in a principal surface region on a top surface of the substrate so as to form a polished intermediate product, then additionally polishing the intermediate product. Substrates made in this way exhibit a good surface flatness at the time of wafer exposure. When a photomask fabricated from a blank obtained from such a substrate is held on the mask stage of a wafer exposure system with a vacuum chuck, the substrate surface undergoes minimal warping, enabling exposure patterns of small geometry to be written onto wafers to good position and linewidth accuracies.
摘要翻译： 通过将起始基板研磨到基板顶面的主表面区域中的特定平坦度，制成光掩模坯料，以形成抛光的中间产品，然后另外抛光中间产品。 以这种方式制成的基板在晶片曝光时表现出良好的表面平坦度。 当从由这种基板获得的坯料制成的光掩模被保持在具有真空卡盘的晶片曝光系统的掩模台上时，基板表面经历最小的翘曲，使得几何形状的曝光图案能够被写入晶片到良好的位置， 线宽精度。
-
公开(公告)号：US20050019678A1
公开(公告)日：2005-01-27
申请号：US10897078
申请日：2004-07-23
CPC分类号： G03F1/60
摘要： A photomask blank substrate is selected for use in a process where at least a masking film or a phase shift film is deposited on a top surface of a photomask blank substrate to form a photomask blank, the deposited film is patterned to form a photomask, and the photomask is mounted in an exposure tool. The substrate is selected by simulating a change in shape in the top surface of the substrate, from prior to film deposition thereon to when the photomask is mounted in the exposure tool; determining the shape of the substrate top surface prior to the change that will impart to the top surface a flat shape when the photomask is mounted in the exposure tool; and selecting, as an acceptable substrate, a substrate having this top surface shape. The selected substrate has an optimized top surface shape that improves productivity in photomask fabrication.
摘要翻译： 选择光掩模空白基板用于至少掩模膜或相移膜沉积在光掩模坯料基板的顶表面上以形成光掩模坯料的方法中，将沉积的膜图案化以形成光掩模，并且 光掩模安装在曝光工具中。 通过在其上形成膜之前，当将光掩模安装在曝光工具中时，通过模拟衬底的顶表面中的形状变化来选择衬底; 在所述变化之前确定所述衬底顶表面的形状，当所述光掩模安装在所述曝光工具中时，所述形状将赋予所述顶表面平坦的形状; 并且选择具有该顶表面形状的基板作为可接受的基板。 所选择的基底具有优化的顶表面形状，其提高光掩模制造的生产率。
-
公开(公告)号：US07070888B2
公开(公告)日：2006-07-04
申请号：US10897078
申请日：2004-07-23
IPC分类号： G03F9/00
CPC分类号： G03F1/60
摘要： A photomask blank substrate is selected for use in a process where at least a masking film or a phase shift film is deposited on a top surface of a photomask blank substrate to form a photomask blank, the deposited film is patterned to form a photomask, and the photomask is mounted in an exposure tool. The substrate is selected by simulating a change in shape in the top surface of the substrate, from prior to film deposition thereon to when the photomask is mounted in the exposure tool; determining the shape of the substrate top surface prior to the change that will impart to the top surface a flat shape when the photomask is mounted in the exposure tool; and selecting, as an acceptable substrate, a substrate having this top surface shape. The selected substrate has an optimized top surface shape that improves productivity in photomask fabrication.
摘要翻译： 选择光掩模空白基板用于至少掩模膜或相移膜沉积在光掩模坯料基板的顶表面上以形成光掩模坯料的工艺中，将沉积的膜图案化以形成光掩模，并且 光掩模安装在曝光工具中。 通过在其上形成膜之前，当将光掩模安装在曝光工具中时，通过模拟衬底的顶表面中的形状变化来选择衬底; 在所述变化之前确定所述衬底顶表面的形状，当所述光掩模安装在所述曝光工具中时，所述形状将赋予所述顶表面平坦的形状; 并且选择具有该顶表面形状的基板作为可接受的基板。 所选择的基底具有优化的顶表面形状，其提高光掩模制造的生产率。
-
公开(公告)号：US20080030715A1
公开(公告)日：2008-02-07
申请号：US11630353
申请日：2005-06-21
申请人： Naoto Kondo , Tsuneyuki Hagiwara
发明人： Naoto Kondo , Tsuneyuki Hagiwara
IPC分类号： G01N21/00
CPC分类号： G03F9/7026 , G03F9/7088
摘要： An aerial image of a measurement mark (PM) arranged on a measurement mask (Rm) is conformed to a center in an X-axis direction of a slit (122) arranged on a Z tilt stage (38). While illuminating the measurement mark with an illumination light (IL), a slit plate (190) on which the slit (122) is formed is continuously moved in a Z-axis direction, and based on position information of the slit (122) obtained during the movement and a photoelectric conversion signal outputted from an optical sensor (24) that receives the illumination light (IL) from the measurement mark (PM) via a projection optical system (PL) and the slit (122), a best focus position is detected. Thus, the best focus position of the projection optical system can be measured in a short period of time.
摘要翻译： 布置在测量掩模（Rm）上的测量标记（PM）的空间图像与布置在Z倾斜台（38）上的狭缝（122）的X轴方向上的中心一致。 在用照明光（IL）照射测量标记的同时，形成有狭缝122的狭缝板（190）在Z轴方向上连续移动，并且基于获得的狭缝（122）的位置信息 在从运动中经由投影光学系统（PL）和狭缝（122）从测量标记（PM）接收照明光（IL）的光学传感器（24）输出的光电转换信号中，最佳聚焦位置 被检测到。 因此，可以在短时间内测量投影光学系统的最佳聚焦位置。
-
公开(公告)号：US07791718B2
公开(公告)日：2010-09-07
申请号：US11576379
申请日：2005-09-30
申请人： Tsuneyuki Hagiwara
发明人： Tsuneyuki Hagiwara
IPC分类号： G01B9/00
CPC分类号： G03F7/7085 , G03F7/70591 , G03F7/70666 , G03F7/70683 , G03F7/70941
摘要： Light is irradiated on a light-shielding pattern on an object surface side of a projection optical system, and light intensity distribution of the light having passed through the projection optical system and slits is detected while slits of an aerial image measuring unit on the image plane side of the projection optical system are moved within a plane perpendicular to the optical axis of the projection optical system, The information concerning the flare of the projection optical system is computed from the light intensity distribution, so that the influence of resist coated on a wafer used in a conventional exposing method can be eliminated, and highly accurate measurement of information concerning the flare can be realized. Further, measurement of information concerning the flare can be performed in a short time comparing to the exposing method because development process or the like of the wafer is not necessary.
摘要翻译： 光照射在投影光学系统的物体表面上的遮光图案上，并且在图像平面上检测通过投影光学系统和狭缝的光的光强度分布，同时空间图像测量单元的狭缝 投影光学系统的一侧在与投影光学系统的光轴垂直的平面内移动。根据光强度分布计算与投影光学系统的闪光有关的信息，使得涂覆在晶片上的抗蚀剂的影响 可以消除以常规曝光方法使用的方法，并且可以实现关于闪光的信息的高精度测量。 此外，由于不需要晶片的显影处理等，因此可以在与曝光方法相比较的短时间内进行关于闪光的信息的测量。
-
-
-
-
-
-
-
-
-
搜索结果
51 条记录 (耗时 0.035 秒)
